• Title/Summary/Keyword: XPS spectra

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Amorphous Carbon Films on Ni using with $CBr_4$ by Thermal Atomic Layer Deposition

  • Choe, Tae-Jin;Gang, Hye-Min;Yun, Jae-Hong;Jeong, Han-Eol;Kim, Hyeong-Jun
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2011.10a
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    • pp.28.1-28.1
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    • 2011
  • We deposited the carbon films on Ni substrates by thermal atomic layer deposition (th-ALD), for the first time, using carbon tetrabromide ($CBr_4$) precursors and H2 reactants at two different temperatures (573 K and 673 K). Morphology of carbon films was characterized by scanning electron microscopy (SEM). The carbon films having amorphous carbon structures were analyzed by X-ray photoemission spectroscopy (XPS) and Raman spectroscopy. As the working temperature was increased from 573 K to 673 K, the intensity of C1s spectra was increased while that of O1s core spectra was reduced. That is, the purity of carbon films containing bromine (Br) atoms was increased. Also, the thin amorphous carbon films (ALD 3 cycle) were transformed to multilayer graphene segregated on Ni layer, through the post-annealing and cooling process.

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Effect of Double Schottky Barrier in Gallium-Zinc-Oxide Thin Film

  • Oh, Teresa
    • Transactions on Electrical and Electronic Materials
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    • v.18 no.6
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    • pp.323-329
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    • 2017
  • This reports the electrical behavior, bonding structure and Schottky contact of gallium-zinc-oxide (GZO) thin film annealed at $100{\sim}400^{\circ}C$. The mobility of GZO with high density of PL spectra and crystal structure was also increased because of the structural matching between GZO and Si substrate of a crystal structure. However, the GZO annealed at $200^{\circ}C$ with an amorphous structure had the highest mobility as a result of a band to band tunneling effect. The mobility of GZO treated at low annealing temperatures under $200^{\circ}C$ increased at the GZO with an amorphous structure, but that at high temperatures over $200^{\circ}C$ also increased when it was the GZO of a crystal structure. The mobility of GZO with a Schottky barrier (SB) was mostly increased because of the effect of surface currents as well as the additional internal potential difference.

Effect of Fluorination on Electrical Behaviors of Carbon Blacks-filled HDPE Polymeric Switch

  • Seo, Min-Kang;Park, Soo-Jin
    • Bulletin of the Korean Chemical Society
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    • v.30 no.6
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    • pp.1337-1340
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    • 2009
  • Electrical properties of a fluorinated carbon black (CB)-filled high-density polyethylene (HDPE) polymeric switch were investigated as a function of fluorination pressure at 0.1 ~ 0.4 MPa. From the FT-IR results, the absorption spectra of the fluorinated CB show an absorption band at 1400 ~ 1000 $cm^{-1}\;for\;{\nu}_{C-F}$ and the peak intensity increased with increasing fluorination pressure. Also, the analysis of XPS spectra of the fluorinated CB indicated that fluorine content increased with increasing fluorination pressure. Meanwhile, the surface free energy of the fluorinated CB decreased with increasing fluorination pressure. Consequently, the increase of fluorine contents of CB made a disappearance of negative temperature coefficient (NTC) behavior of the polymeric switch, which was probably due to the reduction of CB reaggregation after melting point of the HDPE, resulted from the decreasing of London dispersive component of the surface free energy for CB particles.

Chemical structure evolution of low dielectric constant SiOCH films during plasma enhanced plasma chemical vapor deposition and post-annealing procedures

  • Xu, Jun;Choi, Chi-Kyu
    • Proceedings of the Korean Society Of Semiconductor Equipment Technology
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    • 2002.11a
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    • pp.34-46
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    • 2002
  • Si-O-C-H films with a low dielectric constant were deposited on a p-type Si(100) substrate using a mixture gases of the bis-trimethylsilyl-methane (BTMSM) and oxygen by an inductively coupled plasma chemical vapor deposition (ICPCYD). High density plasma of about $~10^{12}\textrm{cm}^{-3}$ is obtained at low pressure (<400 mTorr) with rf power of about 300W in ICPCVD where the BTMSM and $O_2$ gases are fully dissociated. Fourier transform infrared (FTIR) spectra and X-ray photoelectron spectroscopy (XPS) spectra show that the film has $Si-CH_3$ and OH-related bonds. The void within films is formed due to $Si-CH_3$ and OH-related bonds after annealing at $500^{\circ}C$ for the as-deposition samples. The lowest relative dielectric constant of annealed film at $500^{\circ}C$ is about 2.1.

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An XPS Study of YBaCuO Compounds

  • Myung-Mo Sung;Yunsoo Kim
    • Bulletin of the Korean Chemical Society
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    • v.11 no.2
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    • pp.118-123
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    • 1990
  • X-ray photoelectron spectra have been obtained and comparisons have been made for 1-2-3 and 2-1-1 phases of YBaCuO compounds. The photoelectron binding energies of all the constituent elements are consistently larger for the 2-1-1 phase than for the 1-2-3 phase. The peak intensities reflect different stoichiometries of the two phases. For the superconducting 1-2-3 phase, its degradation in air and interaction with water and carbon dioxide were examined by taking core level spectra of all the elements. It appears that yttrium is the most affected by exposure to air, since it undergoes a rapid change to carbonate when water and subsequently carbon dioxide are introduced.

Physico-Chemical Properties of Various Oxide Nanoparticles Synthesized with Electron Beam Irradiation System

  • Sin, Won-Gyu
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.437-437
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    • 2014
  • Various oxide particles are synthesized in an ambient condition using an electron beam irradiation system. The formation of oxide particles is confirmed by FT-IR spectra results and the X-ray photoelectron spectrum. It is also shown that the morphology and size of oxide particles are significantly influenced by the type and flowrate of dilution gas. The energy dispersive X-ray (EDX) analysis also confirms that various oxide particles are synthesized.

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A Study on the Synthesis and Characterization of Carbon Nitride Thin Films by Magnetron Sputter (마그네트론 스퍼터에 의한 Carbon Nitride 박막의 합성 및 특성에 관한 연구)

  • Park, Gu-Bum
    • The Transactions of the Korean Institute of Electrical Engineers P
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    • v.52 no.3
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    • pp.107-112
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    • 2003
  • Amorphous carbon nitride thin films have been deposited on silicon (100) by reactive magnetron sputtering method. The basic depositon parameters varied were the r.f. power(up to 250 W), the deposition pressure in the reactor(up to 100 mtorr) and Ar:$N_2$ gas ratio. FT-IR and X-ray photoelectron spectra showed the presence of different carbon-nitrogen bonds in the films. The surface topography of the films was studied by scanning electron microscopy(SEM) and atomic force microscopy(AFM).

Synthesis of Praseodymium-Doped TiO2 Nanocatalysts by Sol-Microwave and Their Photocatalytic Activity Study

  • Huang, Fengping;Wang, Shuai;Zhang, Shuang;Fan, Yingge;Li, Chunxue;Wang, Chuang;Liu, Chun
    • Bulletin of the Korean Chemical Society
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    • v.35 no.8
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    • pp.2512-2518
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    • 2014
  • The praseodymium-doped $TiO_2$ photocatalyst samples, which could degrade methyl orange under UV irradiation, were prepared by sol-microwave method for improving the photocatalytic activity of $TiO_2$. The resulting materials were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), Transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), Raman spectra, Fourier transform infrared spectra (FTIR) and Ultraviolet-visible diffuse reflectance spectra (UV-vis DRS). It was found Pr doping retarded the growth of crystalline size and the phase transformation from anatase to rutile, and narrowed the band gap energy. Praseodymium doping brought about remarkable improvement in the photoactivity. The optimal dopant amount of Pr was 2% by molar of cement and the calcination temperature was $500^{\circ}C$ for the best photocatalytic activity. The improvement of photocatalytic activity was ascribed to the occurrence of lattice distortion and the effective containment of the recombination of the electron-hole by $Pr^{3+}$.

Effect of oxygen deficiency on electronic properties and local structure of amorphous tantalum oxide thin films

  • Denny, Yus Rama;Firmansyah, Teguh;Park, Chanae;Kang, Hee Jae;Yang, Dong-Seok;Heo, Sung;Chung, Jae Gwan;Lee, Jae Cheol
    • Proceedings of the Korean Vacuum Society Conference
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    • 2015.08a
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    • pp.122.1-122.1
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    • 2015
  • The dependence of electronic properties and local structure of tantalum oxide thin film on oxygen deficiency have been investigated by means of X-ray photoelectron spectroscopy (XPS), Reflection Electron Energy Loss Spectroscopy (REELS), and X-ray absorption spectroscopy (XAS). The XPS results showed that the oxygen flow rate change results in the appearance of features in the Ta 4f at the binding energies of 23.2 eV, 24.4 eV, 25.8, and 27.3 eV whose peaks are attributed to Ta1+, Ta2+, Ta3+, Ta4+, and Ta5+, respectively. The presence of nonstoichiometric state from tantalum oxide (TaOx) thin films could be generated by the oxygen vacancies. The REELS spectra suggested the decrease of band gap for tantalum oxide thin films with increasing oxygen deficiency. In addition, XAS spectra manifested both the increase of coordination number of the first Ta-O shell and a considerable reduction of the Ta-O bond distance with the decrease of oxygen deficiency.

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Characterization of TiO2 Catalyst Modified with H2SO4 (황산으로 개질된 TiO2 촉매의 특성)

  • Pae, Young-Il;Park, Man-Young;Lee, Joon-Hee;Sohn, Jong-Rack
    • Applied Chemistry for Engineering
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    • v.3 no.1
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    • pp.46-52
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    • 1992
  • $TiO_2/SO_4{^{2-}}$ was prepared by precipitation from the mixed solution of titanium chloride and hydrochloric acid followed by modification with sulfuric acid. The characterization of prepared catalyst was performed by using IR, XPS, XRD and DT-TGA. Infrared spectra of $TiO_2/SO_4{^{2-}}$ showed bidentate sulfate ion coordinated to the surface of $TiO_2$. The acid strength of modified catalyst was at least $H_0{\leq}-14.52$, showing the superacidic properties which are attributed to the double bond nature of S=O of the complex formed by the interaction of $TiO_2$ with sulfate ion. For $TiO_2/SO_4{^{2-}}$, the specific surface area increased and the transition from the amorphous to anatase phase occurred at a higher temperature, as compared with pure $TiO_2$.

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