• Title/Summary/Keyword: XPS spectra

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Study on the Electrical Characteristics of SnO2 on p-Type and n-Type Si Substrates (기판의 종류에 따른 SnO2 박막의 전기적인 특성 연구)

  • Oh, Teresa
    • Journal of the Semiconductor & Display Technology
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    • v.16 no.2
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    • pp.9-14
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    • 2017
  • $ISnO_2$ thin films were prepared on p-type and n-type Si substrates to research the interface characteristics between $SnO_2$ and substrate. After the annealing processes, the amorphous structure was formed at the interface to make a Schottky contact. The O 1s spectra showed the bond of 530.4 eV as an amorphous structure, and the Schottky contact. The analysis by the deconvoluted spectra was observed the drastic variation of oxygen vacancies at the amorphous structure because of the depletion layer is directly related to the oxygen vacancy. $SnO_2$ thin film changed the electrical properties depending on the characteristics of substrates. It was confirmed that it is useful to observe the Schottky contact's properties by complementary using the XPS analysis and I-V measurement.

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Surface properties of Nb oxide thin films prepared by rf sputtering

  • Park, Ju-Yeon;Gang, Yong-Cheol
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.306.2-306.2
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    • 2016
  • Niobium oxide thin films were synthesized by reactive rf magnetron sputtering. The target was metallic niobium with 2 inch in diameter and the substrate was n-type Si wafer. To control the surface properties of the films, Nb oxide thin films were obtained at various mixing ratios of argon and oxygen gases. Nb oxide thin films were analyzed with alpha step, scanning electron microscopy (SEM), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS). The result of alpha step showed that the thickness of Nb oxide thin films were decreased with increasing the oxygen gas ratios. SEM images showed that the granular morphology was formed at 0% of oxygen gas ratio and then disappeared at 20 and 75% of oxygen gas ratio. The amorphous Nb oxide was observed by XRD at all films. The oxidation state of Nb and O were studied with high resolution Ni 2p and O 1s XPS spectra. And the change in the chemical environment of Nb oxide thin films was investigated by XPS with Ar+ sputtering.

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An XPS Study of Oxyfluorinated Multiwalled Carbon Nano Tubes

  • Yun, Seok-Min;Kim, Ju-Wan;Jung, Min-Jung;Nho, Young-Chang;Kang, Phil-Hyun;Lee, Young-Seak
    • Carbon letters
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    • v.8 no.4
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    • pp.292-298
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    • 2007
  • In order to investigate functional groups on the surface of Multi-walled Carbon Nanotubes (MWCNTs) induced by oxyfluorination, XPS (X-ray photoelectron spectroscopy) analysis was carried out. All core level spectra of MWCNTs were deconvoluted to several Pseudo-Voigt functions (sum of Gaussian-Lorentzian functions). Both O1s and F1s binding energy of oxyfluorinated MWCNTs shifted high value as increment of fluorine mixing ratio. The carbon-fluorine covalent bonding concentration increased as increment of fluorine mixing ratio. The shape and intensity of OF10-MWCNTs are similar with those of as-received MWCNTs. However, the intensity and binding energies of main peak position of OF20-MWCNTs and OF30-MWCNTs were dramatically increased by oxyfluorination.

EFFECT OF ARGON AND OXYGEN PLASMAS ON VARIOUS POLYETHYLENE SHEETS

  • Chen, Yashao;Hirayama, Naoki;Gomi, Masaki;Kiuchi, Kenji;Momose, Yoshihiro
    • Journal of the Korean institute of surface engineering
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    • v.32 no.3
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    • pp.344-350
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    • 1999
  • The surface chemical structure of three kinds of polyethylene (PE): high density (HD) PE, low density (LD) PE and linear (L)-LDPE exposed to Ar and $O_2$ plasmas has been investigated using XPS. Oxygen was incorporated in a more increased amount for HDPE than for L-LDPE and LDPE. Ar plasma tended to incorporate more oxygen than $O_2$ plasma. The XPS valence band spectra for Ar plasma exhibited a clear peak assigned to $O_2$s character. By chemical derivatization method it was found that the amount of -COOH group at the surface was much greater than that of -OH group. The hydrophilic nature of plasma-treated PE increased in the order: LDPE

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Fabrication of CuSn Nanofibers Prepared via Electrospinning

  • Choi, Jinhee;Park, Juyun;Choi, Ahrom;Lee, Seokhee;Koh, Sung-Wi;Kang, Yong-Cheol
    • Journal of Integrative Natural Science
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    • v.10 no.4
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    • pp.245-248
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    • 2017
  • The Cu and CuSn/PVP nanofibers were fabricated by electrospinning method by controlling various parameters. The precursor solution was prepared with copper(II) acetate monohydrate ($Cu(CH_3COO)_2$) and tin chloride dihydrate ($SnCl_2{\cdot}2H_2O$), and polyvinylpyrrolidone (PVP) for adjusting viscosity. The fabricated nanofibers were calcined at 873 K in Ar atmospheric environment for 5 hours to remove the solvent and polymer. The morphology and diameter of nanofibers were measured by optical microscopy (OM) with Motic image plus 2.0 program. The components and chemical environment were investigated with X-ray photoelectron spectroscopy (XPS). From the XPS survey spectra, we confirmed that CuSn/PVP nanofibers were successfully fabricated. The XPS peaks of C 1s and N 1s were remarkably decreased after calcination of the nanofibers at 873 K. It implies that the PVP was completely decomposed after calcination at 873 K.

XPS STUDY ON THE EFFECT OF LOW-ENERGY ELECTRON IRRADIATION ON DNA DAMAGE BY Fe3+ ION

  • Noh, Hyung-Ah;Park, Yeun-Soo;Cho, Hyuck
    • Journal of Radiation Protection and Research
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    • v.40 no.2
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    • pp.87-91
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    • 2015
  • We have employed X-ray photoelectron spectroscopy (XPS) technique to examine the combined effects of low-energy electron (LEE) irradiation and $Fe^{3+}$ ion on DNA damage. pBR322 plasmid DNA extracted from E. coli ER2420 was used for preparing DNA-$Fe^{3+}$ sample. The C1s XPS spectra were scanned for LEE-irradiated and LEE-unirradiated samples and then curve-fitted. For the samples with LEE irradiation only or with Fe ion only, no significant changes from pure DNA samples were observed - a single effect of either $Fe^{3+}$ ion or LEE irradiation did not cause a significant damage. However, when these two components were combined, the DNA damage was increased quite significantly, compared to the sum of DNA damages caused by $Fe^{3+}$ ion and by LEE irradiation independently. This observation is consistent with our previous results [Radiat. Res. 177, 775 (2012)] which was done using gel-electrophoresis technique. Partial interpretation of the observed spectrum peaks was also attempted.

Orientation Control of Polyoxometalate Nanoparticles in Organic- Inorganic Hybrid LB Films

  • Lee, Burm-Jong;Kim, Hee-Sang;Park, Dong-Ho;Nam, Sang-Hee;Yunghee Oh
    • KIEE International Transactions on Electrophysics and Applications
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    • v.4C no.1
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    • pp.26-30
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    • 2004
  • Orientation control of a polyoxometalate (POM) nanoparticle in its two-dimensional arrangement was attempted by Langmuir-Blodgett (LB) technique. For their uniorientation, two carboxyl groups were introduced on one side of the POM particle, and hydrophobic long chains were attached by esterification with the carboxyl groups (C18-POM). The C18-POM layer spread on water surface showed stability against surface pressure up to 60 mN/m. The pattern of the C18-POM isotherm was quite different from stearyl alcohol (C18-OH), while the POM itself did not show any development of surface pressure on water surface. The AFM images of C18-POM LB films showed some microcrystalline structures that were noticed as dot structures by Brewster angle microscopy. The microimages for C18-POM did not completely spread out as a monolayer on the water surface. The XPS spectra indicated the presence of POM structures and stearyl ester bonds formed from about 65% of the total carboxyls. The XRD spectra showed that the unioriented POMs were not positioned with the same lattice distance but rather in a wavy surface state.

A Study on an Oxygen Vacancy and Conductivity of Oxide Thin Films Deposited by RF Magnetron Sputtering and Annealed in a Vacuum

  • Oh, Teresa
    • Transactions on Electrical and Electronic Materials
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    • v.18 no.1
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    • pp.21-24
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    • 2017
  • Usually, the oxygen vacancy is an important factor in an oxide semiconductor device because the conductivity is related to the oxygen vacancy, which is formed at the interface between oxide semiconductors and electrodes with an annealing processes. ZTO is made by mixing n-type ZnO and p-type $SnO_2$. Zink tin oxide (ZTO), zink oxide (ZnO) and tin oxide ($SnO_2$) thin films deposited by RF magnetron sputtering and annealed, to generate the oxygen vacancy, were analyzed by XPS spectra. The contents of oxygen vacancy were the highest in ZTO annealed at $150^{\circ}C$, ZnO annealed at $200^{\circ}C$ and $SnO_2$ annealed at $100^{\circ}C$. The current was also increased with increasing the oxygen vacancy ions. The highest content of ZTO oxygen vacancies was obtained when annealed at 150. This is the middle level in compared with those of ZnO annealed at $200^{\circ}C$ and $SnO_2$ annealed at $100^{\circ}C$. The electrical properties of ZTO followed those of $SnO_2$, which acts a an enhancer in the oxide semiconductor.

Influence of Thermal Annealing on the Microstructural Properties of Indium Tin Oxide Nanoparticles

  • Kim, Sung-Nam;Kim, Seung-Bin;Choi, Hyun-Chul
    • Bulletin of the Korean Chemical Society
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    • v.33 no.1
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    • pp.194-198
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    • 2012
  • In this work, we studied the microstructural changes of ITO during the annealing process. ITO nanoparticles were prepared by the sol-gel method using indium tin hydroxide as the precursor. The prepared sample was investigated using TEM, powder XRD, XPS, DRIFT, and 2D correlation analysis. The O 1s XPS spectra suggested that the microstructural changes during the annealing process are closely correlated with the oxygen sites of the ITO nanoparticles. The temperature-dependent in situ DRIFT spectra suggested that In-OH in the terminal sites is firstly decomposed and, then, Sn-O-Sn is produced in the ITO nanoparticles during the thermal annealing process. Based on the 2D correlation analysis, we deduced the following sequence of events: 1483 (due to In-OH bending mode) ${\rightarrow}$ 2268, 2164 (due to In-OH stretching mode) ${\rightarrow}$ 1546 (due to overtones of Sn-O-Sn modes) ${\rightarrow}$ 1412 (due to overtones of Sn-O-Sn modes) $cm^{-1}$.

A Study on the Chemical Properties of AZO with Crystal Structure and IGZO of Amorphous Structure Due to the Annealing Temperature (결정질AZO 박막과 비정질IGZO 박막의 결정구조와 결합에너지와의 상관성)

  • So, Young Ho;Song, Jung Ho;Seo, Dong Myung;Oh, Teresa
    • Industry Promotion Research
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    • v.1 no.1
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    • pp.1-6
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    • 2016
  • To research the correlation between the amorphous and crystal structure of oxide semiconductors, AZO and IGZO films were deposited and annealed with various temperatures in a vacuum state. AZO increased the degree of crystal structure with increasing the annealing temperature, but IGZO became an amorphous structure after the annealing process at high temperature. The series of AZO films with various annealing temperatures showed the chemical shift from the analyzer of PL and O 1s spectra, but the results of IGZO films by PL and O 1s spectra were not observed the chemical shift. The binding energy of oxygen vacancy of AZO with a crystal structure was 531.5 eV, and that of IGZO with an amorphous structure was 530 eV as a lower binding energy.