• Journal of the Korean Vacuum Society
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• v.4 no.S1
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• pp.28-33
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• 1995

TiN 박막은 저온(<$500^{\circ}C$), 저압(1Torr)에서 Tetrakis(diethylamido)titanium[TDEAT, Ti(NEt2)4]single precursor를 사용하여 증착하였다. 증차고딘 박막은 SEM(Scanning Electron Microscopy)으로 surface morphology와 step coverage를 측정하였고, TEM(Transmission Electron Microscopy)분석결과 microcrystalline의 TiN을 확인하였다. XPS(X-ray Photoelectron Spectroscopy)분석결과에 따르면 $200-500^{\circ}C$구간에서는 $\beta$-hydogen elimination에 의한 반응이 일어나고 $600-700^{\circ}C$구간에서는 thermal decomposition에 의한 반응이 일어나고 있음을 알 수 있다. Carbon과 oxygen의 농도는 AES(Auger Electron Spectroscopy)를 사용하여 측정하였으며 온도가 감소할수록 carbon의 농도가 감소하는 경향을 보여주고 있다.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.60-60
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• 2010

CO2 reforming of methane (CRM) based on Ni catalysts was studied using temperature programmed reaction (TPR). The onset temperature of the CRM reaction was increased in a repeated TPR experiments. X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy showed formation of graphite structures on Ni during CRM reaction, which deactivate Ni-surfaces. Attempts were made for inhibiting deactivation of Ni surfaces and reducing onset-temperature of the CRM reaction by various surface modification techniques, which will be presented in this poster.

• Journal of the Korean Vacuum Society
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• v.5 no.1
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• pp.6-13
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• 1996

The kinetics of native oxide formation on the (Al, Ga)As and (Cd, Mn)Te have been studied by X-ray photoelectron spectroscopy(XPS) and Auger electron spectroscopy(AES). The regrowth of native oxide after 3keV Ar ion sputter etch and deionized water etch has been studied. The previous report exhibited that the native oxide on CdTe and GaAs can be removed completely by deionzied(DI) water only[1]. On the other hand, the airgrown native oxide on (Al, Ga)As become nonhomogeneous and the regrown native oxide on (Cd,Mn)Te can be partially removed.

• Clean Technology
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• v.18 no.4
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• pp.432-439
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• 2012

The electrocatalytic oxidation of CO was studied using carbon-supported 20 wt% PtRu (PtRu/C) catalysts, which were prepared with different Pt : Ru atomic ratios from 7 : 3 to 3 : 7 using a colloidal method combined with a freeze-drying procedure. The bimetallic PtRu/C catalysts were characterized by various physicochemical analyses, including X-ray diffraction (XRD), transmission electron microscopy (TEM), energy dispersive X-ray spectroscopy (EDS), and X-ray photoelectron spectroscopy (XPS). CO stripping voltammetry measurements indicated that the addition of Ru with a Pt catalyst significantly improved the electrocatalytic activity for CO electrooxidation. Among the tested catalysts, the $Pt_5Ru_5/C$ catalyst had the lowest onset potential (vs.Ag/AgCl) and the largest CO EAS. Structural modification via lattice parameter change and electronic modification in the unfilled d band states for Pt atoms may facilitate the electrooxidation of CO.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.26 no.1
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• pp.101-112
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• 2015

II~VI compound semiconductors, $Zn_xCd_{1-x}S$ thin films have been synthesized onto indium-tin-oxide(ITO) coated glass substrates using thermal evaporation technique. The composition ratio x($0{\leq}x{\leq}1$) was varied to fabricate different kinds of $Zn_xCd_{1-x}S$ thin films including CdS(x=0) and ZnS(x=1) thin films. Then, the deposited thin films were thermally annealed at $400^{\circ}C$ to enhance their crystallinity. The chemical composition and electronic structure of films were investigated by using X-ray photoelectron spectroscopy(XPS). The optical energy gaps of the samples were determined by ultra violet-visible-near infrared(UV-Vis-NIR) spectroscopy and were found to vary in the range of 2.44 to 3.98 eV when x changes from 0 to 1. Finally, we measured the THz characteristics of the $Zn_xCd_{1-x}S$ thin films using THz-TDS(time domain spectroscopy) system to identify the capability for electronic and optical devices in THz region.

• Bulletin of the Korean Chemical Society
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• v.31 no.2
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• pp.309-314
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• 2010

The surface modified $LiMn_2O_4$ materials with Li-Fe composites were prepared by a sol-gel method to improve the electrochemical performance of $LiMn_2O_4$ and were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy-energy dispersive spectroscopy (SEM-EDS), and transmission electron microscopy (TEM)-EDS. XRD results indicate that all the samples (modified and pristine samples) have cubic spinel structures, and XRD, XPS, and TEM-EDS data reveal the formation of $Li(Li_xFe_xMn_{2-2x})O_4$ solid solution on the surface of particles. For the electrochemical properties, the modified material demonstrated dramatically enhanced reversibility and stability even at elevated temperature. These improvements are attributed to the formation of the solid solution, and thus-formed solid solution phase on the surface of $LiMn_2O_4$ particle reduces the dissolution of Mn ion and suppresses the Jahn-Teller effect.

• Proceedings of the Korea Technical Association of the Pulp and Paper Industry Conference
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• 1999.04b
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• pp.239-244
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• 1999

aluminum sulfate (alum) as a representative retention aid in papermaking processes was added to pulp suspensions, and the aluminum components adsorbed on the pulp were investigated quantitatively by two types of X-ray elementary analyses with regard to simultaneous changes of their surface charges. X-ray photoelectron spectroscopy (XPS) and X-ray fluorescence analysis (XFA) were applied to determine the aluminum components retained in pulp pads up to ca. 10 nm and 100${\mu}$m depth, respectively. In other words, XPS was utilized to analyze the outermost surface layers of the samples, and XFA was available for measurement of their extensive regions. A particle charge detector (PCD) was used to monitor streaming potentials at various pHs of the pulp mixtures under moderate sharing conditions. At pH 4.5 of pulp suspensions containing alum, surface charges of pulp fibers varied from negative to slight negative (approximately neutral) according to adsorption of aluminum components onto the pulp fibers. Subsequently, when a dilute NaOH solution in limited amounts was added to pulp mixtures, both streaming potentials and surface aluminum content of the pulp fibers increased distinctly although little total aluminum retention increased. Further addition of alkali solutions brought drastic decreases of the surface charges and surface aluminum content, while total aluminum content, on the contrary, increased gradually under neutral conditions. These results indicate that residual aluminum ions remained in pulp suspensions are predominantly adsorbed on surfaces of pulp fibers by adequate alkali additions and they must sufficiently cationize the fiber surfaces with increases of somewhat cationic aluminum complexes formed on the surfaces. On the other hand, aluminum components formed in higher pH ranges have nearly no contribution to improvement of charge properties of the pulp fiber surfaces, even though aluminum retention in pulp pads increases. XPS and XFA analyses combined with streaming potential measurement using a PCD suggest close relationships between aluminum content on the pulp fiber surfaces and their charge properties.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.384-384
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• 2010

Zirconium oxynitride films were obtained by r.f. reactive magnetron sputtering of a zirconium target with nitrogen flow rate ranging from 0 to 60 sccm. The phases present in the films were determined by X-ray diffraction (XRD). Measurements of the oxidation state $ZrON_x$ films were investigated by X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). Thickness of these samples was estimated by spectroscopic ellipsometry (SE) and scanning electron microscopy (SEM). We found that the surface morphology of $ZrON_x$ films measured by atomic force microscopy (AFM) was also depended on the nitrogen gas flow.

• Journal of the Korean Vacuum Society
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• v.10 no.3
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• pp.328-334
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• 2001

The characteristics of $NO/N_2O$ nitrided oxide and reoxidized nitrided oxide being studied as super thin gate oxide and gate dielectric layers of nonvolatile semiconductor memory(NVSM) was investigated by dynamic secondary ion mass spectrometry(D-SMS), time-of-flight secondary ion mass spectrometry(ToF-SIMS), and x-ray photoelectron spectroscopy (XPS). The specimen was annealed in $NO/N_2O$ ambient after initial oxide process. The result of D-SIMS exhibits that the center of nitrogen exists at the initial oxide interface and the distribution of nitrogen is wider in the annealing process with $N_2O$ than with NO annealing process. For investigating the condition of nitrogen that exists within the nitrided oxide, ToF-SIMS and XPS analysis were carried out. It was shown that the center of nitrogen investigated by D-SIMS was expected the SiON chemical bonds. The nitrogen near the newly formed reoxide/silicon substrate interface was appeared as $Si_2NO$ chemical bonds, and it is agreed with the distribution of SiN and $Si_2NO$ species by ToF-SIMS.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.1
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• pp.15-23
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• 2002

In this study, metal/ZnO contacts were thermally annealed at different temperatures (as-dep., 400$^{\circ}C$, 600$^{\circ}C$, 800$^{\circ}C$, 1000$^{\circ}C$) for the investigation of electrical properties, and surface and interface characteristics. The analysis of the element composition and the chemical bonding state of the surface was made by the XPS(X-ray photoelectron spectroscopy). An attempt was made to establish the electrical property-microstructure relationship for the (Ti, Au)/ZnO. The Ti/ZnO contact exhibits an ohmic characteristics with a relatively high contact resistance of 4.74${\times}$10$\^$-1/ $\Omega$$\textrm{cm}^2$ after an annealing at 400$^{\circ}C$. The contact showed a schottky characteristics when the samples were annealed at higher temperature than 400$^{\circ}C$. The transition from the ohmic to schottky characteristics was contributed from the formation of the oxide layers as was confirmed by the peaks for O-O and Ti-O bondings in XPS analysis. For the Au/ZnO contact the lowest contact resistance was obtained from the as-deposited sample. The resistance was slowly increased with annealing temperature up to 600$^{\circ}C$. The ohmic characteristics were maintained eden fort 600$^{\circ}C$ annealing. The XPS analysis showed that the Au-O intensity was dramatically decreased with temperature above 600$^{\circ}C$.