• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1006-1009
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• 2006

The chemical structure of the interface between Ag with $Li_2O$ and tri (8-hydroxyquinoline) aluminum (Alq) was investigated by using in-situ characterization of x-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS). $Li_2O$ on Ag had lower barrier height than LiF on Ag. XPS and UPS results show the interaction between $Li_2O$ and Alq leads to gap state formation in HOMO of Alq.

• Transactions on Electrical and Electronic Materials
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• v.3 no.3
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• pp.29-33
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• 2002

A procedure was developed for preparing bulk carbon nitride crystals from a polymeric $\alpha$ -C$_3$N$\_$4.2/ at high pressure and temperature in the presence of seeds of crystalline carbon nitride films prepared by a high voltage discharge plasma combined with pulsed laser ablation of graphite target. The samples were evaluated by x-ray photoelectron spectroscopy (XPS), infrared (IR) spectroscopy, Auger electron spectroscopy (AES), secondary-ion mass spectrometry (SIMS), scanning electron microscopy (SEM) and x-ray diffraction (XRD). Notably, XPS studies of the film composition before and after thermobaric treatments demonstrate that the nitrogen composition in $\alpha$ -C$_3$N$\_$4.2/ material initially containing more than 58% nitrogen decreases during the annealing process and reaches a common, stable composition of ~45%. The thermobaric experiments were performed at 10-77 kbar and 350-1200 $\^{C}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1989.06a
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• pp.83-86
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• 1989

Lead titanate thin films with a perovskite structure were successfully structure were successfully fabricated on titanium substrate by Chemical Vapour Deposition(CVD). Analyses of Auger Electron Spectroscopy(AES) and X-ray Photoelectron Spectroscopy (XPS) have been performed in order to find a chemical composition of lead titanate films. The analysis of chemical composition by AES and XPS was investigated for variations of deposition temperature and Ti(C$_2$H$_{5}$O)$_4$ fractions. The chemical composition of PbTiO$_3$by XPS analysis was almost constant regardless of deposition parameters and the comparison of chemical composition by AES and XPS was performed.d.

• Journal of the Korean Magnetics Society
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• v.25 no.5
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• pp.156-161
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• 2015

The electronic structures of the potential candidate semiconductor nanoparticles for dye-sensitized solar cell (DSSC), such as $ZnSnO_3$ and $Zn_2SnO_4$, have been investigated by employing X-ray photoemission spectroscopy (XPS). The measured X-ray diffraction patterns show that $ZnSnO_3$ and $Zn_2SnO_4$ samples have the single-phase ilmenite-type structure and the inverse spinel structure, respectively. The measured Zn 2p and Sn 3d core-level XPS spectra reveal that the valence states of Zn and Sn ions are divalent (Zn 2+) and tetravalent (Sn 4+), respectively, in both $ZnSnO_3$ and $Zn_2SnO_4$. On the other hand, the shallow core-level measurements show that the binding energies of Sn 4d and Zn 3d core levels in $ZnSnO_3$ are lower than those in $Zn_2SnO_4$. This work provides the information on the valence states of Zn and Sn ions and their chemical bonding in $ZnSnO_3$ and $Zn_2SnO_4$.

• Bulletin of the Korean Chemical Society
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• v.30 no.11
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• pp.2729-2734
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• 2009

We report here the surface behavior of zirconium oxide deposited on Si(100) substrate depending on the different substrate temperatures. The zirconium oxide thin films were successfully deposited on the Si(100) surfaces applying radio-frequency (RF) magnetron sputtering process. The obtained zirconium oxide films were characterized by X-ray photoelectron spectroscopy (XPS) for study about the chemical environment of the elements, X-ray diffraction (XRD) for check the crystallinity of the films, spectroscopic ellipsometry (SE) technique for measuring the thickness of the films, and the morphology of the films were investigated by atomic force microscope (AFM). We found that the oxidation states of zirconium were changed from zirconium suboxides ($ZrO_{x,y}$, x,y < 2) (x; higher and y; lower oxidation state of zirconium) to zirconia ($ZrO_2$), and the surface was smoothed as the substrate temperature increased.

• Plant Journal
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• v.16 no.3
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• pp.47-52
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• 2020

This study investigated the methodologies to enhance the corrosion resistance and the ways to measure for subsea equipment made of aluminum. The methodologies for the anticorrosion were cathodic protection, conversion coating, anodizing and organic coating. The simply analyzed ways to measure the corrosion resistance were Scanning Electron Microscope (SEM), Electrochemical Impedance Spectroscopy (EIS), Glow discharge optical emission spectrum spectroscopy (GD-OES), Fourier Transform Infrared Spectroscopy (FT-IR), Transmission Electron Microscopy (TEM), X-ray Photoelectron Spectroscopy (XPS), Scanning Vibrating Electrode Technique (SVET), contact angle and interfacial tension. The most widely used tools for increasing the corrosion resistance were the anodizing and the organic coating. Many ways were evenly used to measure corrosion. The methods more frequently utilized were SEM for the surface investigation and the contact angle to evaluate the corrosion resistance.

• Journal of the Korean Vacuum Society
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• v.7 no.3
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• pp.169-175
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• 1998

The plasma etching of polysilicon was performed with the HBr/$Cl_2/He-O_2$ gas mixture. The residual layers after photoresist strip were investigated using x-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM). The etch residue was identified as silicon oxide deposited on the top of the patterned polysilicon. In order to clarify the formation mechanism of the etch residue, the effects of various gas mixtures such as $Cl_2/He-O_2$and HBr/$Cl_2$were investigated. We found that the etch residue is well formed in the presence of oxygen, suggesting that the etch residue is caused by the reaction of oxvgen and non-volatile silicon halide compounds. Wet cleaning and dry etch cleaning processes were applied to remove the polysilicon etch residue, which can affect the electrical characteristics and further device processes. XPS results show that the wet cleaning is suitable for the removal of the etch residue.

• Bulletin of the Korean Chemical Society
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• v.31 no.2
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• pp.397-400
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• 2010

Zirconium oxide thin films deposited on the p-type Si(100) substrates by radio-frequency (RF) reactive magnetron sputtering with different plasma gas ratios have been studied by using spectroscopic ellipsometry (SE), atomic force microscopy (AFM), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS). The deposition of the films was monitored by the oxygen gas ratio which has been increased from 0 to 80%. We found that the thickness and roughness of the zirconium oxide thin films are relatively constant. The XRD revealed that the deposited thin films have polycrystalline phases, Zr(101) and monoclinic $ZrO_2$ ($\bar{1}31$). The XPS result showed that the oxidation states of zirconium suboxides were changed to zirconia form with increasing $O_2$ gas ratio.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.306.2-306.2
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• 2016

Niobium oxide thin films were synthesized by reactive rf magnetron sputtering. The target was metallic niobium with 2 inch in diameter and the substrate was n-type Si wafer. To control the surface properties of the films, Nb oxide thin films were obtained at various mixing ratios of argon and oxygen gases. Nb oxide thin films were analyzed with alpha step, scanning electron microscopy (SEM), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS). The result of alpha step showed that the thickness of Nb oxide thin films were decreased with increasing the oxygen gas ratios. SEM images showed that the granular morphology was formed at 0% of oxygen gas ratio and then disappeared at 20 and 75% of oxygen gas ratio. The amorphous Nb oxide was observed by XRD at all films. The oxidation state of Nb and O were studied with high resolution Ni 2p and O 1s XPS spectra. And the change in the chemical environment of Nb oxide thin films was investigated by XPS with Ar+ sputtering.

• Journal of Environmental Science International
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• v.16 no.12
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• pp.1431-1437
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• 2007

Cobalt titanates($CoTiO_x$), such as $CoTiO_3$ and $Co_2TiO_4$, have been synthesized via a solid-state reaction and characterized using X-ray diffraction(XRD) and X-ray photoelectron spectroscopic(XPS) measurement techniques, prior to being used for continuous wet trichloroethylene(TCE) oxidation at $36^{\circ}C$, to support our earlier chemical structure model for Co species in 5 wt% $CoO_x/TiO_2$(fresh) and(spent) catalysts. Each XRD pattern for the synthesized $CoTiO_3$ and $Co_2TiO_4$ was very close to those obtained from the respective standard XRD data files. The two $CoTiO_x$ samples gave Co 2p XPS spectra consisting of very strong main peaks for Co $2p_{3/2}$ and $2p_{1/2}$ with corresponding satellite structures at higher binding energies. The Co $2p_{3/2}$ main structure appeared at 781.3 eV for the $CoTiO_3$, and it was indicated at 781.1 eV with the $Co_2TiO_4$. Not only could these binding energy values be very similar to that exhibited for the 5 wt% $CoO_x/TiO_2$(fresh), but the spin-orbit splitting(${\Delta}E$) had also no noticeable difference between the cobalt titanates and a sample of the fresh catalyst. Neither of all the $CoTiO_x$ samples were active for the wet TCE oxidation, as expected, but a sample of pure $Co_3O_4$ had a good activity for this reaction. The earlier proposed model for the surface $CoO_x$ species existing with the fresh and spent catalysts is very consistent with the XPS characterization and activity measurements for the cobalt titanates.