• 한국재료학회지
• /
• 제18권9호
• /
• pp.482-485
• /
• 2008

Tetragonal-$Ni_{1-x}Pd_x$Si/Si (001) structure was studied by using density functional theory (DFT). An epitaxial interface between $2{\times}2{\times}4$ (001) tetragonal-NiSi supercell and $1{\times}1{\times}2$ (001) Si supercell was first constructed by adjusting the lattice parameters of B2-NiSi structure to match those of the Si structure. We chose Ni atoms as a terminating layer of the B2-NiSi; the equilibrium gap between the tetragonal-NiSi and Si was calculated to be 1.1 ${\AA}$. The Ni atoms in the structure moved away from the original positions along the z-direction in a systematic way during the energy minimization. Two different Ni sites were identified at the interface and the bulk, respectively. The two Ni sites at the interface have 6 and 7 coordination numbers. The Ni sites with coordination number 6 at the interface were located farther away from the interface, and were more favorable for Pd substitution.

• 한국세라믹학회지
• /
• 제34권9호
• /
• pp.921-926
• /
• 1997

Two NbCx-C1-x/Y2O3/Ti sputter-coated Al2O3 substrates (L 5.5 cm$\times$W 0.5 cm) were diffusion bonded together using hot press method at 95$0^{\circ}C$ for 3 hours under 1 MPa of applied pressure. 4 points bending tests were used to evaluate the mechanical performance of these precracked laminate beams. Two types of mechanical responses were observed: crack penetration through the interface for x=0.75, 1 and crack deflection into an interface for x=0.25, 0.5. The Al2O3/NbCx-C1-x/Y2O3/Ti system suggested here has been proves to be effective for the thermokinetical stability and tailorability of the interfaces of Al2O3/Ti composites at 95$0^{\circ}C$.

• 대한전자공학회:학술대회논문집
• /
• 대한전자공학회 1998년도 하계종합학술대회논문집
• /
• pp.449-452
• /
• 1998

We have studied the oxidatio nrte of $Si_{1-x}Ge_{x}$ epitaxial layer grown by MBE(molecular beam epitaxy). Oxidation were performed at 700.deg. C, 800.deg. C, 900.deg. C, and 1000.deg. C. After the oxidation, the results of AES(auger electron spectroscopy) showed that Ge was completely rejected out of the oxide and pile up at $SiO_{2}/$Si_{1-x}Ge_{x}$ interface. It is shown that the presence of Ge at the $SiO_{2}$/$Si_{1-x}Ge_{x}$ interface changes the dry oxidation rate. The dry oxidation rate was equal to that of pure Si regardless of Ge mole fraction at 700.deg. C and 800.deg.C, while it was decreased at both 900.deg. C and 1000.deg.C as the Ge mole fraction was increased. The ry oxidation rates were reduced for heavy Ge concentration, and large oxidation time. In the parabolic growth region of $Si_{1-x}Ge_{x}$ oxidation, The parabolic rate constant are decreased due to the presence of Ge-rich layer. After the longer oxidation at the 1000.deg.C, AES showed that Ge peak distribution at the $SiO_{2}$/$Si_{1-x}Ge_{x}$ interface reduced by interdiffusion of silicon and germanium.

• 한국주조공학회지
• /
• 제31권6호
• /
• pp.362-365
• /
• 2011

In the present work, the corrosion properties of Mg-xSn (x = 1, 3, 5, 7 and 9 wt.%) alloys have been investigated. Potentiodynamic polarization and immersion tests were carried out in 3.5% NaCl solution of pH 7.2 at room temperature to measure the corrosion properties of Mg-xSn (x = 1, 3, 5, 7 and 9 wt.%) alloys. With increase of the Sn contents, the volume fraction of the $Mg_2Sn$ phase was increased. The corrosion rate of Mg-xSn alloys was increased up to 7 wt.%Sn and decreased above 9 wt.%Sn. Initiation of galvanic site during immersion mainly occurred at Mg/$Mg_2Sn$ interface and propagation went into ${\alpha}$-Mg. For this reason, corrosion properties of Mg-xSn (added from 1 wt.%Sn to 7 wt.%Sn alloys) alloys are decreased because the galvanic site was increased with increasing Sn addition. In Mg-9wt.%Sn alloy, however, the corrosion site were changed from Mg/$Mg_2Sn$ interface to ${\alpha}$-Mg/$M_2Sng$ interface in lamellar structure. Preferentially corrosion of ${\alpha}$-Mg/$M_2Sn$ interface in lamellar structure impeded corrosion propagation went into ${\alpha}$-Mg.

• 한국통신학회논문지
• /
• 제16권12호
• /
• pp.1336-1347
• /
• 1991

I본 논문에서는 ISDN(Integrated Services Digital Network)환경에서 PC(Personal Computer)를 상호 연결하여 컴퓨터 간에 정보를 교환하여 패킷 통신망을 구현하기 위하여 ISDN 패킷 단말기용 PC 접속기를 설계하고 구현하였다. ISDN 패킷 단말기용 PC 접속기는 ISDN 계층 1기능과 ISDN 계층 2기능을 수행하는 S 인터페이스 처리부와 X.25에 서비스를 제공하며, X.25는 패킷 모드에서 수행하는 터미널을 위해 DTE(Data Terminal Equipment)와 DCE(Data Circuit Terminating Equipment)간의 접속을 규정하고 있다. S 인터페이스 처리부는 AMD사의 Am79C30칩을 사용하였으며, ISDN 패킷 처리부는 D 채널에 AMD 사의 AmZ8038의 FIFO(First Out)칩을 사용하였으며, D채널의 전반적인 신호절차 제어를 위해 인텔사의 8086 마이크로세서를 사용하였다. S 인터페이스 처리부는 ISDN 계층 1,2로 구성되어 있으며, 계층 간 통신을 위해 메일박스(mail box)를 사용하였다. ISDN 패킷 처리부는 X.25 레벨에서 모듈별로 구성되어 있으며, S 인터페이스 처리부와 ISDN 패킷 처리부 간 통신을 위하여 인터페이스 제어기를 사용하였다.

• 한국재료학회지
• /
• 제22권8호
• /
• pp.385-389
• /
• 2012

Significant improvements in the switching voltage distribution are required for the development of unipolar resistive memory devices using $MnO_x$ thin films. The $V_{set}$ of the as-grown $MnO_x$ film ranged from 1 to 6.2 V, whereas the $V_{set}$ of the oxygen-annealed film ranged from 2.3 to 3 V. An excess of oxygen in an $MnO_x$ film leads to an increase in $Mn^{4+}$ content at the $MnO_x$ film surface with a subsequent change in the $Mn^{4+}/Mn^{3+}$ ratio at the surface. This was attributed to the change in $Mn^{4+}/Mn^{3+}$ ratios at the $MnO_x$ surface and to grain growth. Oxygen annealing is a possible solution for improving the switching voltage distribution of $MnO_x$ thin films. In addition, crystalline $MnO_x$ can help stabilize the $V_{set}$ and $V_{reset}$ distribution in memory switching in a Ti/$MnO_x$/Pt structure. The improved uniformity was attributed not only to the change of the crystallinity but also to the redox reaction at the interface between Ti and $MnO_x$.

• E2M - 전기 전자와 첨단 소재
• /
• 제16권9호
• /
• pp.65.1-65
• /
• 2003

The interface of zirconium oxide thin films on silicon is analyzed in detail for their potential applications in the microelectronics. The formation of an interfacial layer of ZrSi$\sub$x/O$\sub$y. with graded Zr concentration is observed by the x-ray photoelectron spectroscopy and secondary ion mass spectrometry analysis. The as-deposited ZrO$_2$/ZrSi$\sub$x/O$\sub$y//Si sample is thermally stable up to 880$^{\circ}C$, but is less stable compared to the ZrO$_2$/SiO$_2$/Si samples. Post-deposition annealing in oxygen or ammonia improved the thermal stability of as-deposited ZrO$_2$/ZrSi$\sub$x/O$\sub$y/Si to 925$^{\circ}C$, likely due to the oxidation/nitridation of the interface. The as-deposited film had an equivalent oxide thickness of∼13 nm with a dielectric constant of ∼21 and a leakage current of 3.2${\times}$10e-3 A/$\textrm{cm}^2$ at 1.5V. Upon oxygen or ammonia annealing, the formation of SiO$\sub$x/ and SiH$\sub$x/N$\sub$y/O$\sub$z/ at the interface reduced the overall dielectric constants.

• 비파괴검사학회지
• /
• 제14권1호
• /
• pp.7-15
• /
• 1994

동을 중간재로 하는 $Si_3N_4/SUS304$ 접합재의 접합계면 근방의 잔류응력 분포를 유한요소법과 X선 응력측정법을 이용하여 해석을 하였다. 그 결과, 접합재의 세라믹부 계면 근방의 잔류응력 분포를 정량적으로 밝혀낼 수 있었다. 세라믹부에 발생되는 접합 잔류응력은 접합계면 근방에서 대단히 크게 나타났으며, 특히 최대인장 잔류응력 ${\sigma}_x$는 단부에서 발생하였다. 한편, ${\sigma}_x$는 접합계면 근방에서 3차원분포를 하고 있기 때문에 2차원 유한요소 해석결과와는 대단히 다른 값을 나타내고 있으며, 특히 시험편 중앙부의 계면 근방에서는 X선 실측결과가 인장 잔류응력임에 반하여 2차원 유한요소 해석결과는 압축 잔류응력으로 계산되어짐을 알았다. 따라서, 이와같은 3차원 분포를 하고 있는 접합계면 근방의 잔류응력 ${\sigma}_x$보다 간편하고 정확하게 예측할 수 있는 유한요소 해석모델에 대하여 서로 검토하였다.

• 한국세라믹학회지
• /
• 제35권9호
• /
• pp.899-904
• /
• 1998

Interface reaction between LSMC and YSZ is discussed with chemical composition of LSMC. The reac-tivity between LSMC and YSZ increased with increasing Co amount and A-site deficient perovskite is very effective on reducing reactivity. The (La0.8Sr0.2)xMn0.8Co0.2O3 (X=0.9-1) composition is not reactive with YSZ in experimental range. The electrode reaction reaction resistance increases due to reaction product.

• 한국표면공학회지
• /
• 제27권2호
• /
• pp.91-98
• /
• 1994

For the plasma sprayed as well as the EB-PVD thermal barrier coatings, the fracture paths within the oxidation products developed at the interface between the partially stabilized zirconia ceramic coating and NiCoCrAlY bond coat during cyclic thermal oxidation has been investigated. It was observed that the fracture in the oxidation products primarily took place within the oxide such as $Ni_{1-x}Co_3(Al_,Cr)_2O_4$ or at the interface between the oxide and $Al_2O_3$. It was found that Al2O3 developed first, followed by the Ni/Co/Cr rich oxides such as ,,$Ni_{1-x}Co_x(Al_,Cr)_2O_4$ $Cr_2O_3$and NiO at the interface between the ceramic coating and the bond coat in a cyclic high temperature environment. It was therfore concluded that the formation of the oxide containing Ni, Cr and Co was a life-limiting event for thermal barrier coatings during cyclic thermal oxidation.