• Korean Journal of Materials Research
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• v.18 no.9
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• pp.482-485
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• 2008

Tetragonal-$Ni_{1-x}Pd_x$Si/Si (001) structure was studied by using density functional theory (DFT). An epitaxial interface between $2{\times}2{\times}4$ (001) tetragonal-NiSi supercell and $1{\times}1{\times}2$ (001) Si supercell was first constructed by adjusting the lattice parameters of B2-NiSi structure to match those of the Si structure. We chose Ni atoms as a terminating layer of the B2-NiSi; the equilibrium gap between the tetragonal-NiSi and Si was calculated to be 1.1 ${\AA}$. The Ni atoms in the structure moved away from the original positions along the z-direction in a systematic way during the energy minimization. Two different Ni sites were identified at the interface and the bulk, respectively. The two Ni sites at the interface have 6 and 7 coordination numbers. The Ni sites with coordination number 6 at the interface were located farther away from the interface, and were more favorable for Pd substitution.

• Journal of the Korean Ceramic Society
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• v.34 no.9
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• pp.921-926
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• 1997

Two NbCx-C1-x/Y2O3/Ti sputter-coated Al2O3 substrates (L 5.5 cm$\times$W 0.5 cm) were diffusion bonded together using hot press method at 95$0^{\circ}C$ for 3 hours under 1 MPa of applied pressure. 4 points bending tests were used to evaluate the mechanical performance of these precracked laminate beams. Two types of mechanical responses were observed: crack penetration through the interface for x=0.75, 1 and crack deflection into an interface for x=0.25, 0.5. The Al2O3/NbCx-C1-x/Y2O3/Ti system suggested here has been proves to be effective for the thermokinetical stability and tailorability of the interfaces of Al2O3/Ti composites at 95$0^{\circ}C$.

• Proceedings of the IEEK Conference
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• 1998.06a
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• pp.449-452
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• 1998

We have studied the oxidatio nrte of $Si_{1-x}Ge_{x}$ epitaxial layer grown by MBE(molecular beam epitaxy). Oxidation were performed at 700.deg. C, 800.deg. C, 900.deg. C, and 1000.deg. C. After the oxidation, the results of AES(auger electron spectroscopy) showed that Ge was completely rejected out of the oxide and pile up at $SiO_{2}/$Si_{1-x}Ge_{x}$ interface. It is shown that the presence of Ge at the $SiO_{2}$/$Si_{1-x}Ge_{x}$ interface changes the dry oxidation rate. The dry oxidation rate was equal to that of pure Si regardless of Ge mole fraction at 700.deg. C and 800.deg.C, while it was decreased at both 900.deg. C and 1000.deg.C as the Ge mole fraction was increased. The ry oxidation rates were reduced for heavy Ge concentration, and large oxidation time. In the parabolic growth region of $Si_{1-x}Ge_{x}$ oxidation, The parabolic rate constant are decreased due to the presence of Ge-rich layer. After the longer oxidation at the 1000.deg.C, AES showed that Ge peak distribution at the $SiO_{2}$/$Si_{1-x}Ge_{x}$ interface reduced by interdiffusion of silicon and germanium.

• Journal of Korea Foundry Society
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• v.31 no.6
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• pp.362-365
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• 2011

In the present work, the corrosion properties of Mg-xSn (x = 1, 3, 5, 7 and 9 wt.%) alloys have been investigated. Potentiodynamic polarization and immersion tests were carried out in 3.5% NaCl solution of pH 7.2 at room temperature to measure the corrosion properties of Mg-xSn (x = 1, 3, 5, 7 and 9 wt.%) alloys. With increase of the Sn contents, the volume fraction of the $Mg_2Sn$ phase was increased. The corrosion rate of Mg-xSn alloys was increased up to 7 wt.%Sn and decreased above 9 wt.%Sn. Initiation of galvanic site during immersion mainly occurred at Mg/$Mg_2Sn$ interface and propagation went into ${\alpha}$-Mg. For this reason, corrosion properties of Mg-xSn (added from 1 wt.%Sn to 7 wt.%Sn alloys) alloys are decreased because the galvanic site was increased with increasing Sn addition. In Mg-9wt.%Sn alloy, however, the corrosion site were changed from Mg/$Mg_2Sn$ interface to ${\alpha}$-Mg/$M_2Sng$ interface in lamellar structure. Preferentially corrosion of ${\alpha}$-Mg/$M_2Sn$ interface in lamellar structure impeded corrosion propagation went into ${\alpha}$-Mg.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.16 no.12
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• pp.1336-1347
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• 1991

In this paper, The PC interface for packet terminal of ISDN is designed and implemented in order to build packet communication networks which share computer resources and exchange informations between computer in the ISDN environment. The PC interface for packet terminal of ISDN constitutes S interface handler part which controls functions of ISDN layer1 and layer 2, constitutes packet handler part which controls services of X.25 protocol in the packet level.Where, The function of ISDN layer1 provides rules of electrical and mechanical characteristics, services for ISDN layer 2. The function of ISDN layer 2 provides function of LAPD procedure, services for X.25 The X.25 specifies interface between DCE and DTE for terminals operrating in the packet mode. The S interface handler part is orfanized by Am 79C30 ICs manufactured by Advanecd Micro Devices. ISDN packet handler part is organiged by AmZ8038 for FIFO for the purpose of D channel. The common signal procedure for D channel is controlled by Intel's 8086 microprocessor. The S interface handler part is based on ISDN layer1,2 is controlled by mail box in order to communicate between layers. The ISDN packet handler part is based on module in the X.25 lebel. The communication between S interface handler part and ISDN packet handler part is organized by interface controller.

• Korean Journal of Materials Research
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• v.22 no.8
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• pp.385-389
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• 2012

Significant improvements in the switching voltage distribution are required for the development of unipolar resistive memory devices using $MnO_x$ thin films. The $V_{set}$ of the as-grown $MnO_x$ film ranged from 1 to 6.2 V, whereas the $V_{set}$ of the oxygen-annealed film ranged from 2.3 to 3 V. An excess of oxygen in an $MnO_x$ film leads to an increase in $Mn^{4+}$ content at the $MnO_x$ film surface with a subsequent change in the $Mn^{4+}/Mn^{3+}$ ratio at the surface. This was attributed to the change in $Mn^{4+}/Mn^{3+}$ ratios at the $MnO_x$ surface and to grain growth. Oxygen annealing is a possible solution for improving the switching voltage distribution of $MnO_x$ thin films. In addition, crystalline $MnO_x$ can help stabilize the $V_{set}$ and $V_{reset}$ distribution in memory switching in a Ti/$MnO_x$/Pt structure. The improved uniformity was attributed not only to the change of the crystallinity but also to the redox reaction at the interface between Ti and $MnO_x$.

• Electrical & Electronic Materials
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• v.16 no.9
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• pp.65.1-65
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• 2003

The interface of zirconium oxide thin films on silicon is analyzed in detail for their potential applications in the microelectronics. The formation of an interfacial layer of ZrSi$\sub$x/O$\sub$y. with graded Zr concentration is observed by the x-ray photoelectron spectroscopy and secondary ion mass spectrometry analysis. The as-deposited ZrO$_2$/ZrSi$\sub$x/O$\sub$y//Si sample is thermally stable up to 880$^{\circ}C$, but is less stable compared to the ZrO$_2$/SiO$_2$/Si samples. Post-deposition annealing in oxygen or ammonia improved the thermal stability of as-deposited ZrO$_2$/ZrSi$\sub$x/O$\sub$y/Si to 925$^{\circ}C$, likely due to the oxidation/nitridation of the interface. The as-deposited film had an equivalent oxide thickness of∼13 nm with a dielectric constant of ∼21 and a leakage current of 3.2${\times}$10e-3 A/$\textrm{cm}^2$ at 1.5V. Upon oxygen or ammonia annealing, the formation of SiO$\sub$x/ and SiH$\sub$x/N$\sub$y/O$\sub$z/ at the interface reduced the overall dielectric constants.

• Journal of the Korean Society for Nondestructive Testing
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• v.14 no.1
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• pp.7-15
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• 1994

The two-dimensional elastoplastic analysis was peformed to reveal a detail residual stress distribution of ceramic/metal joint specimen using finite element method and X-ray method. The highest tensile residual stress, ${\sigma}_x$ perpendicular to the interface appeared at the edge of the ceramic near the interface. In the vicinity of the interface, the high stress concentration occurs and residual stress distributes three-dimensionally. Therefore, the measured stress distribution differed remarkably from the result of the two-dimensional finite-element analysis. Especially at the center of the specimen near the interface, the residual stress, ox obtained from the finite element analysis was compressive, whereas X-ray measurement yielded tensile ${\sigma}_x$. Therefore, it is also attempted to investigate the finite element model for the prediction of residual stress ${\sigma}_x$ distributed nearly the interface of joint.

• Journal of the Korean Ceramic Society
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• v.35 no.9
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• pp.899-904
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• 1998

Interface reaction between LSMC and YSZ is discussed with chemical composition of LSMC. The reac-tivity between LSMC and YSZ increased with increasing Co amount and A-site deficient perovskite is very effective on reducing reactivity. The (La0.8Sr0.2)xMn0.8Co0.2O3 (X=0.9-1) composition is not reactive with YSZ in experimental range. The electrode reaction reaction resistance increases due to reaction product.

• Journal of the Korean institute of surface engineering
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• v.27 no.2
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• pp.91-98
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• 1994

For the plasma sprayed as well as the EB-PVD thermal barrier coatings, the fracture paths within the oxidation products developed at the interface between the partially stabilized zirconia ceramic coating and NiCoCrAlY bond coat during cyclic thermal oxidation has been investigated. It was observed that the fracture in the oxidation products primarily took place within the oxide such as $Ni_{1-x}Co_3(Al_,Cr)_2O_4$ or at the interface between the oxide and $Al_2O_3$. It was found that Al2O3 developed first, followed by the Ni/Co/Cr rich oxides such as ,,$Ni_{1-x}Co_x(Al_,Cr)_2O_4$ $Cr_2O_3$and NiO at the interface between the ceramic coating and the bond coat in a cyclic high temperature environment. It was therfore concluded that the formation of the oxide containing Ni, Cr and Co was a life-limiting event for thermal barrier coatings during cyclic thermal oxidation.