• Journal of Soil and Groundwater Environment
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• v.27 no.1
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• pp.25-30
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• 2022

Mackinawite (FeS), as a ubiquitous reduced iron mineral, is known as a key controller of redox reactions in anaerobic subsurface environment. The reaction of FeS with redox-sensitive toxic element such as arsenic is substantially affected by pH conditions of the given environments. In this study, the interaction of As(V) with FeS was studied under strict anaerobic conditions with various pH conditions. The pH-dependent arsenic removal tests were conducted under wide ranges of pH conditions and X-ray absorption spectroscopy (XAS) was applied to investigate the reaction mechanisms under pH 5, 7, and 9. The removal efficiency of FeS for As(V) showed the higher removal of As(V) under low pH conditions and its removal efficiency decreased with increasing pH, and no As(V) reduction was observed in 1 g/L FeS solution. However, XAS analysis indicated the reduction of As(V) to As(III) occurred during reaction between FeS and As(V). The reduced form of As(III) was particularly identified as an arsenic sulfide mineral (As₂S₃) in all pH conditions (pH 5, 7, and 9). As₂S₃ precipitation was more pronounced in pH 5 where the solubility of FeS is higher than in other pH conditions. The linear combination fitting results of XAS demonstrated that As(V) removal mechanism is concerted processes of As₂S₃ precipitation and surface complexation of both arsenic species.

• Journal of the Korean Magnetics Society
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• v.21 no.6
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• pp.198-203
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• 2011

The electronic structure of ferrimagnetic spinel oxide of $FeV_2O_4$ has been investigated by employing soft x-ray absorption spectroscopy (XAS) and soft x-ray magnetic circular dichroism (XMCD). The Fe 2p and V 2p XAS spectra show that the valence states of Fe and V ions are ${\sim}Fe^{2.3+}$ mixed-valent states and ${\sim}V^{3+}$ states, respectively. In Fe 2p XMCD spectra, finite XMCD signals are observed for divalent $Fe^{2+}$ states only, but not for $Fe^{3+}$ states. This finding indicates that the magnetic moments of $Fe^{2+}$ ions are ordered ferromagnetically but that those of $Fe^{3+}$ ions are cancelled, implying that $Fe^{2+}$ ions play an important role in determining magnetic properties of $FeV_2O_4$.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.141-141
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• 2010

The effect of thermal anneal on the characteristics of structural properties and the enhancement of luminescence and photovoltaic (PV) characteristics of silicon-rich silicon-nitride films were investigated. By using an ultra high vacuum ion beam sputtering deposition, B-doped silicon-rich silicon-nitride (SRSN) thin films, with excess silicon content of 15 at. %, on P-doped (n-type) Si substrate was fabricated, sputtering a highly B doped Si wafer with a BN chip by N plasma. In order to examine the influence of thermal anneal, films were then annealed at different temperature up to $1100^{\circ}C$ under $N_2$ environment. Raman, X-ray diffraction, and X-ray photoemission spectroscopy did not show any reliable evidence of amorphous or crystalline Si clusters allowing us concluding that nearly no Si nano-cluster could be formed through the precipitation of excess Si from SRSN matrix during thermal anneal. Instead, results of Fourier transform infrared and X-ray photoemission spectroscopy clearly indicated that defective, amorphous Si-N matrix of films was changed to be well-ordered thanks to high temperature anneal. The measurement of spectral ellipsometry in UV-visible range was carried out and we found that the optical absorption edge of film was shifted to higher energy as the anneal temperature increased as the results of thermal anneal induced formation of $Si_3N_4$-like matrix. These are consistent with the observation that higher visible photoluminescence, which is likely due to the presence of Si-N bonds, from anneals at higher temperature. Based on these films, PV cells were fabricated by the formation of front/back metal electrodes. For all cells, typical I-V characteristic of p-n diode junction was observed. We also tried to measure PV properties using a solar-simulator and confirmed successful operation of PV devices. Carrier transport mechanism depending on anneal temperature and the implication of PV cells based on SRSN films were also discussed.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.397-397
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• 2013

The electrical, electronic, optical properties and the local structure of Nickel Oxide (NiO) thin film have been investigated by X-ray photoelectron spectroscopy (XPS), Reflection Electron Energy Loss Spectroscopy (REELS), UV-spectrometer,Hall Effect measurement and X-ray absorption spectroscopy (XAS). The XPS results show that the Ni 2p spectra for all films consist of $Ni2p_{3/2}$ at around 854.5 eV which indicate the presence of Ni-O bond from NiO phase and for the annealed film at temperature above $200^{\circ}C$ shows the coexist Ni oxide and Ni metal phase. The REELS spectra showed that the band gaps of the NiO thin films were abruptly decreased with increasing temperature. The values of the band gaps are consistent with the optical band gaps estimated by UV-Spectrometer. The optical transmittance spectra shows that the transparency of NiO thin films in the visible light region was deteriorated with higher temperature due to existence of $Ni^0$. Hall Effect measurement suggest that the NiO thin films prepared at relatively low temperatures (RT and $100^{\circ}C$) are suitable for fabricating p-type semiconductor which showed that the best properties was achieved at $100^{\circ}C$, such as a low resistivity of $7.49{\Omega}.cm$. It can be concluded that the annealing process plays a crucial role in converting from p type to n type semiconductor which leads to reducing electrical resistivity of NiO thin films. Furthermore, the extended X-ray absorption fine structure (EXAFS) spectrum at the Ni K-edge was used to address the local structure of NiO thin films. It was found that the thermal treatments increase the order in the vicinity of Ni atom and lead the NiO thin films to bunsenite crystal structure. Moreover, EXAFS spectra show in increasing of coordination number for the first Ni-O shell and the bond distance of Ni-O with the increase of substrate temperature.

• Journal of the Korean Magnetics Society
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• v.23 no.5
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• pp.149-153
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• 2013

The electronic structures of $TCr_2O_4$ (T = Fe, Co, Ni) spinel oxides have been investigated by employing synchrotron radiation-based soft X ray absorption spectroscopy (XAS). The measured 2p XAS spectra of transition-metal ions reveal that Cr ions are trivalent ($Cr^{3+}$), and all the T (T = Fe, Co, Ni) ions are divalent ($Fe^{2+}$, $Co^{2+}$, $Ni^{2+}$). It is also found that most of T (T = Fe, Co, Ni) ions occupy the A sites under the tetrahedral symmetry, while Cr ions occupy mainly the B sites under the octahedral symmetry. These findings show that the structures of $TCr_2O_4$ (T = Fe, Co, Ni) are very close to the normal spinel structures. Based on these findings, it is expected that Jahn-Teller (JT) effects are important in $FeCr_2O_4$ and $NiCr_2O_4$. In contrast, $CoCr_2O_4$ maintains the cubic structure without having the JT distortion since both $Cr^{3+}$ and $Co^{2+}$ ions are non-JT ions. This work suggests that the antiferromagnetic interaction between $Cr^{3+}$ and $T^{2+}$ ions plays an important role in determining the magnetic properties of $TCr_2O_4$ (T = Fe, Co, Ni).

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.103-103
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• 2011

The epitaxial Cu-doped ZnO and pure ZnO thin films were grown on Al2O3 (0001) substrates by RF sputtering method. The structures and crystallographic orientations were investigated using X-ray diffraction (XRD) and X-ray absorption spectroscopy. From the XRD pattern, it is observed that peak positions shift towards higher $2{\theta}$ value with Cu doping. The ${\omega}$-scan measurements at the (0002) diffraction peak for these samples reveal that the full-widths at half-maxima (FWHMs) are about $0.017-0.019^{\circ}$, which indicate a good c-axis orientation of the Zn1-xCuxO films. From phi-scan, all of the Zn1-xCuxO films were epitaxially grown. EXAFS measurements also demonstrated that Cu incorporated into a Zn-atom position substitutionally. All the results confirmed that copper ion were well incorporated into the ZnO lattices by substituting Zn sites without changing the wurtzite structure and no secondary phase existed in Cu-doped ZnO thin films.

• Journal of the Korean Vacuum Society
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• v.12 no.4
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• pp.275-280
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• 2003

Epitaxial Gd$_2O_3:Eu^{3+}$luminescent thin films have been grout on Si(III) substrates using ionized Cluster Beam Deposition (ICBD). After the film growing, they were implanted and post annealed to change the crystal structure. The initial growth stage was monitored by using in-situ Reflection High Energy Electron Diffraction (RHEED). The formed crystal structure was identified with X-ray diffraction (XRD) technique and Fourier transform infrared (FT-R) spectroscopy. The electronic states variations were investigated by Near Edge X-ray Absorption Fine Structure (NEXAFS). Photoluminescence (PL), Cathodoluminescence (CL). and Vacuum ultraviolet (VUV) spectrum were used for examining the optical properties. We report the optical property changes depending on crystal structure and the electronic states.

• Journal of the Korean Magnetics Society
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• v.19 no.3
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• pp.106-112
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• 2009

$Ni_{1-x}Mg_xFe_2O_4$ ferrite system was studied by using X-ray diffraction and $M{\ddot{o}}ssbauer$ spectroscopy. The samples were prepared by ceramic sintering method with Mg content x. The X-ray diffraction patterns of samples show phase of cubic spinel structure. There are no remarkable changes of lattice constants in $Ni_{1-x}Mg_xFe_2O_4$ ferrite system. The $M{\ddot{o}}ssbauer$ spectra were consisted of two sets of six lines, respectively, corresponding to $Fe^{3+}$ at tetrahedral and octahedral sites. The magnetic hyperfine field of samples was decreased as increasing Mg contents x in both sites and it was shown Yafet-Kittel magnetic structure. $NiFe_2O_4$ was shown complete inverse spinel, but $NiFe_2O_4$ was shown partial inverse spinel which absorption area ratio (oct/tet) was 1.449 in $M{\ddot{o}}ssbauer$ spectrum.

• Applied Chemistry for Engineering
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• v.27 no.6
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• pp.669-671
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• 2016

Hydroxyapatite (HAP) was prepared by a hydrothermal synthesis method and also silver was introduced on the surface of HAP through an ion exchange reaction. The crystal phase and morphology of HAP were then evaluated by X-ray diffraction (XRD) and transmission electron microscopy (TEM). In addition, the absorption property of HAP was characterized by diffuse reflectance UV-Vis spectroscopy. The presence of silver nanoparticles on the surface of HAP was also verified by XRD and TEM analysis. Particularly, the silver doped HAP showed an enhanced absorption property in UV-Vis region compared to that of the pristine HAP.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.282-282
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• 2013

The antimony sulfide ($Sb_2S_3$) thin films were deposited using the gas phase method which known as atomic layer deposition (ALD) on mesoporous micro-films. Tris (dimethylamido) antimony (III[$(Me_2N)_3Sb$] and hydrogensulfide ($H_2S$) were used as precursors to deposit $Sb_2S_3$. Self-terminating nature of $(Me_2N)_3Sb$ and $H_2S$ reaction were demonstrated by growth rate saturation versus precursors dosing time. Absorption spectra and extinction coefficient were investigated by UV-VIS spectroscopy. Scanning electron microscopic analysis and X-ray photoelectron spectroscopy (XPS) depth profile were employed to determine the conformal deposition.