• Title/Summary/Keyword: X-ray Scattering

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Interfacial diffusion in Fe/Cr magnetic multilayers studied by synchrotron x-ray techniques (다층형 Fe/Cr 자성박막에서 계면확산의 방사광 x-선 연구)

  • Cho, Tae-Sik;Jeong, Ji-Wook
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.05a
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    • pp.84-87
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    • 2003
  • The interfacial diffusion in Fe/Cr/MgO(001) multilayers has been studied using synchrotron x-ray techniques, such as x-ray reflectivity, extended x-ray absorption fine structures (EXAFS), and anomalous x-ray scattering (AXS). The results of x-ray reflectivity indicated that the interfacial roughness of Fe/Cr multilayers with Cr-$4{\AA}$-thick was larger than that with Cr-$4{\AA}$-thick. The results of EXAFS indicated that the Fe element dominantly diffuse into the stable Cr layers at the Fe/Cr interface. The AXS was certified the existence of the interdiffused Fe element in the Cr layers. Our study revealed that the rough interface of the Fe/Cr multilayers was caused by the interfacia diffusion of Fe element into the Cr layers.

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Restoration of Chest X-ray by Kalman Filter

  • Kim, Jin-Woo
    • Journal of information and communication convergence engineering
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    • v.8 no.5
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    • pp.581-585
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    • 2010
  • A grid was sandwiched between two cascaded imaging plates. Using a fan-beam X-ray tube and a single exposure scheme, the two imaging plates, respectively, recorded grid-less and grid type information of the object. Referring to the mathematical model of the Grid-less and grid technique, it was explained that the collected components whereas that of imaging plates with grid was of high together with large scattered components whereas that of imaging plate with grid was of low and suppressed scattered components. Based on this assumption and using a Gaussian convolution kernel representing the effect of scattering, the related data of the imaging plates were simulated by computer. These observed data were then employed in the developed post-processing estimation and restoration (kalman-filter) algorithms and accordingly, the quality of the resultant image was effectively improved.

Annealing effect of Schottky contact on the characteristics of 1300 V 4H-SiC SBDs (1300 V급 4H-SiC SBDs의 Contact의 특성에 미치는 열처리 효과)

  • 강수창;금병훈;도석주;제정호;신무환
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.05a
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    • pp.30-33
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    • 1999
  • 본 연구에서는 Pt/f4-SiC Schottky barrier diodes(SBDs)의 소자 성능향상과 미세구조와의 상관관계를 규명하였다. 다른 열처리 온도구간에 따른 금속/SiC 계면의 미세구조 평가는 X-ray scattering법을 사용하여 분석하였다. 소자의 역 방향 특성은 열처리 온도가 증가함에 따라 저하되었다. As-deposited와 $850^{\circ}C$ 온도에서 열처리된 소자의 최대 항복전압은 각각 1300 V와 626 V 이었다. 그러나, 소자의 순방향 특성은 열처리 온도가 증가함에 따라 향상되었다. X-ray scattering법으로 >$650^{\circ}C$ 이상의 열처리 온도에서는 Pt/SiC 계면에서 Pt-silicides가 형성되었고, 이러한 Silicides의 형성이 Pt/SiC 계면의 평활도를 증가시킨 원인이 됨을 보였다. SBDs의 순방향 특성은 열처리 과정동안 Pt/SiC 계면에서 형성된 silicides의 결정성에 강하게 의존함을 알 수 있었다.

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Phase Transformation of Sn-Pb-Bi Solder for Photovoltaic Ribbon: A Real-time Synchrotron X-ray Scattering Study

  • Cho, Tae-Sik
    • Transactions on Electrical and Electronic Materials
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    • v.15 no.3
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    • pp.155-158
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    • 2014
  • The phase transformation of Sn-Pb-Bi solder for photovoltaic ribbon during soldering was studied using real-time synchrotron x-ray scattering. At room temperature, Sn and Pb crystal phases in the solder existed separately. By heating to $92^{\circ}C$, a new PbBi alloy crystal phase was formed, which grew further up to $160^{\circ}C$. The Sn crystal phase first started to melt at $160^{\circ}C$, and was mostly melted at $165^{\circ}C$. In contrast, the Pb and PbBi crystal phases started to melt at $165^{\circ}C$, and were mostly melted at $170^{\circ}C$. The useful result was obtained, that the solder's melting temperature decreased from $183^{\circ}C$ to $170^{\circ}C$ by addition of a small amount of Bi atoms to the eutectic Sn62-Pb38 (wt%) solder. Our study first revealed the detailed in-situ phase transformation of Sn-Pb-Bi solder during heating to the eutectic temperature. Considering the results of peel strength and hardness, adding 1 wt% of Bi atoms to the Sn62-Pb38 (wt%) solder produced an appropriate composition.

Crystallization Behavior of Polymers as Viewed from the Molecular Level

  • Tashiro, Kohji;Sasaki, Sono;Ueno, Yoko;Yoshioka, Akiko;Kobayashi, Masamichi
    • Macromolecular Research
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    • v.8 no.3
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    • pp.103-115
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    • 2000
  • The structural changes viewed from the molecular level have been investigated for the isothermal crystallization phenomena of polyethylene (PE) and the solvent-induced crystallization phenomenon of syndiotactic polystyrene (sPS) glassy sample. The data, which were collected by the time-resolved measurements of Fourier-transform infrared spectra, Raman spectra, synchrotron-sourced small-angle X-ray scattering, wide-angle X-ray scattering, and so on, were combined together to extract the detailed structural information in these phase transition phenomena. In the case of PE, the isothermal crystallization from the melt to the orthorhombic form was found to occur via the conformationally-disordered trans chain form, followed by the formation of the lamellar stacking structure of regular orthorhombic-type crystals. In the case of sPS, the amorphous chains in the glassy sample were found to enhance the mobility through the interaction with the injected solvent molecules, which act as a trigger to cause the conformational ordering from the random coil to the regular T$_2$G$_2$-type helical form. The thus created short helical segments were found to grow into longer helices, which gathered together to form the crystallites, as revealed by the organized coupling of the infrared, Raman and X-ray scattering data.

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The Thickness Determination of Silicone Resin on Zinc Electroplated Steels using Compton Scattering (Compton 산란선을 이용한 아연계 전기도금강판 표면의 Slicone Resin Film 두께측정)

  • Jae Chun So;Do Hyung Lee
    • Journal of the Korean Chemical Society
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    • v.35 no.5
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    • pp.539-544
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    • 1991
  • A method to determine the thickness of silicone resin film on zinc eletroplated steel using X-ray compton scattering was investigated. On the basis of the fact that compton scattering process predominates over photoelectric absorption for the light elements such as C, H, O and Si, the compton scattered line of RhK$_{\alpha}$ was used to determine the thickness of silicone resin. In this method, the standard calibration curve for thickness determination of silicone resin film was found to be linear in the range of 0.2~5.0 ${mu}$m film thickness. The analytical results agreed well with those obtained by the gravimetric method and the accuracy was found to be 0.22 ${mu}$m.

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Understanding spin configuration in the geometrically frustrated magnet TbB4: A resonant soft X-ray scattering study

  • Huang, H.;Jang, H.;Kang, B.Y.;Cho, B.K.;Kao, C.C.;Liu, Y.J.;Lee, J.S.
    • Current Applied Physics
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    • v.18 no.11
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    • pp.1205-1211
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    • 2018
  • The frustrated magnet has been regarded as a system that could be a promising host material for the quantum spin liquid (QSL). However, it is difficult to determine the spin configuration and the corresponding mechanism in this system, because of its geometrical frustration (i.e., crystal structure and symmetry). Herein, we systematically investigate one of the geometrically frustrated magnets, the $TbB_4$ compound. Using resonant soft x-ray scattering (RSXS), we explored its spin configuration, as well as Tb's quadrupole. Comprehensive evaluations of the temperature and photon energy/polarization dependences of the RSXS signals reveal the mechanism of spin reorientation upon cooling down, which is the sophisticated interplay between the Tb spin and the crystal symmetry rather than its orbit (quadrupole). Our results and their implications would further shed a light on the search for possible realization of QSL.

PREFERRED ORIENTATION OF TIN FILM STUDIED BT A REAL TIME SYNCHROTRON X-RAY SCATTERING

  • Je, J.H.;Noh, D.Y.
    • Journal of the Korean institute of surface engineering
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    • v.29 no.5
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    • pp.399-406
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    • 1996
  • The orientational cross-over phenomena in an RF sputtering growth of TiN films were studied in an in-situ, real-time synchrotron x-ray scattering experiment. For the films grown with pure Ar sputtering gas, the cross-over from the more strained (002)-oriented grains to the less strained (111)-oriented grains occurred as the film thickness was increased. As the sputtering power was increased, the cross-over thickness, at which the growth orientation changes from the <002> to the <111> direction, was decreased. The addition of $N_2$ besides Ar as sputtering gas suppressed the cross-over, and consequently resulted in the (002) preferred orientation without exhibiting the cross-over. We attribute the observed cross-over phenomena to the competition between the surface and the strain energy. The x-ray powder diffraction, the x-ray reflectivity, and the ex-situ AFM surface topology study consistently suggest that the microscopic growth front was in fact always the (002) planes. In the initial stage of growth, the (002) planes were aligned to the substrate surface to minimize the surface energy. At later stages, however, the (002) growth front tilted away from the surface by about $60^{\circ}$ to relax the strain, which caused the cross-over of the preferred growth direction to the <111> direction.

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