• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1999.05a
• /
• pp.34-38
• /
• 1999

In this study, molybdenum thin films were etched with the various Cl$_2$/(Cl$_2$+SF$_{6}$) gas mixing ratio in an magnetically enhanced reactive ion etching(MERIE) by the etching parameter such as rf power of 185 watts, chamber pressure of 40 mTorr and B-field of 80 gauss. The etch rate was 150 nm/min under Cl$_2$/(Cl$_2$+SF$_{6}$) gas mixing ratio of 0.25. At this time, the selectivity of Mo to SiO$_2$, photoresist were respectively 0.94, 0.50. The surface reaction of the etched Mo thin films was investigated with X - ray photoelectron spectroscopy (XPS).PS).

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.6 no.1
• /
• pp.58-63
• /
• 2005

PTFE (polytetrafluoroethylene) thin films were prepared from the pellets of the graphite doped PTFE via pulsed laser ablation with 1064 nm Nd:YAG laser. The graphite powder converts the absorbed photon energy into thermal energy which is transmitted to nearby PTFE. The PTFE is decomposed by thermal process. The deposited films were transparent and crystalline. SEM (scanning electron microscopy) and AFM (atomic force microscopy) analyses indicated that the film surface morphology changed to fibrous structure with increasing thickness. The fluorine to carbon ratios of the film were 1.7 and molecular axis was parallel with (100) Si-wafer substrate. These results obtained by XPS (X-ray photoelectron spectroscopy), FTIR (fourier transform infrared spectroscopy) and XRD (X-ray diffraction).

• Polymer(Korea)
• /
• v.37 no.4
• /
• pp.547-552
• /
• 2013

Polyimide (PI) containing carboxyl functional group was prepared and reacted with diaminosiloxane during high temperature film casting. The morphology of resulting film was observed by using transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDX), which revealed that globular 100 nm-sized PI domains and continuous polysiloxane phase were formed. X-ray photoelectron spectroscopy (XPS) study indicated that air-film interface mainly consisted of polysiloxane blocks. Poly(imidesiloxane) thin layer was thermostable until $400^{\circ}C$ and its pressure- sensitive adhesive property was retained up to $300^{\circ}C$. The comparative experiments revealed that grafting between carboxyl groups of polyimide and aminosiloxane was crucial for formation of microdomain structure and pressure-sensitive adhesive property.

• Journal of the Korean Magnetics Society
• /
• v.18 no.1
• /
• pp.19-23
• /
• 2008

The mixed ferrite $V_xFe_{3-x}O_4$(x=0.0, 0.15, 0.5, 1.0) thin films were prepared by sol-gel method. Their crystallographic and magnetic hyperfine properties have been studied using X-ray diffraction(XRD), X-ray photoelectron spectroscopy(XPS) and conversion electron $M\"{o}ssbauer$ spectroscopy(CEMS). The crystal structure is found to be cubic spinel throughout the series($x{\leq}1.0$), and the lattice parameter $a_0$ increases linearly with increasing V content. XRD, XSP and CEMS indicate that $V^{3+}$ substitution for $Fe^{3+}$ in B-site is superior to $V^{2+}$ substitution for $Fe^{2+}$ in B-site. It is noticeable that both quadrupole shift and hyperfine field decreases with increasing V composition, suggesting the change of local symmetry and accompanying line-broadening. The line-broadening on CEMS spectra can be explained by the distribution of magnetic hyperfine fields.

• Ceramist
• /
• v.10 no.5
• /
• pp.74-85
• /
• 2007

• Proceedings of the Korean Vacuum Society Conference
• /
• 2005.08a
• /
• pp.62-62
• /
• 2005

• 한국전기화학회:학술대회논문집
• /
• 1999.04a
• /
• pp.14-14
• /
• 1999

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.13 no.3
• /
• pp.188-192
• /
• 2000

In this study PZT etching was performed using planar inductively coupled Ar/Cl$_2$/BCI$_3$ plasma. The etch rate of PZT film was 2450 $\AA$/min at Ar(20)/BCl$_3$(80) gas mixing ratio and substrate temperature of 8$0^{\circ}C$. X-ray photoelectron spectroscopy(XPS) analysis for films composition of etched PZT surface was utilized. The chemical bond of PbO is broken by ion bombardment and Cl radical, and the peak of metal Pb in a Pb 4f narrow scan begins to appear upon etching. As increasing additive BCl$_3$content the relative content of oxygen decreases rapidly in contrast with etch rate of PZT thin film. So we though that the etch rate of PZT thin film increased because abundant B and BCl radicals made volatile oxy-compound such as B$_{x}$/O$_{y}$ and/or BClO$_{x}$ bond. We achieved etch profile of about 80$^{\circ}$ at Ar(20)/BCl$_3$(80) gas mixing condition and substrate temperature of 8$0^{\circ}C$TEX>X>.

• KSTLE International Journal
• /
• v.4 no.2
• /
• pp.56-59
• /
• 2003

Boron carbide thin coatings were deposited on silicon wafers by DC magnetron sputtering using a ${B}_4$C target with Ar as processing gas. Various amounts of methane gas (${CH}_4$) were added in the deposition process to better understand their influence on tribological properties of the coatings. Reciprocating wear tests employing an oscillating friction wear tester were performed to investigate the tribological behaviors of the coatings in ambient environment. The chemical characteristics of the coatings and worn surfaces were studied using X-ray Photoelectron Spectroscopy (XPS) and Auger Electron Spectroscopy (AES). It revealed that ${CH}_4$addition to Ar processing gas strongly affected the tribologcal properties of sputtered boron carbide coating. The coefficient of friction was reduced approximately from 0.4 to 0.1, and wear resistance was improved considerably by increasing the ratio of ${CH}_4$gas component from 0 to 1.2 vol %. By adding a sufficient amount of ${CH}_4$(1.2 %) in the deposition process, the boron carbide coating exhibited lowest friction and highest wear resistance.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.369.2-369.2
• /
• 2014

Diamond-like Carbon(DLC) films doping Si were deposited by linear ion source(LIS)-physical vapor deposition method on Si wafer. We have studied the effects of Si content on friction and wear properties of DLC films and the characteristics of the films were investigated using Nano-indentation, Micro raman spectroscopy, Field Emission-Scanning Electron Microscope (FM-SEM) and X-ray Photoelectron Spectroscopy (XPS). The films has been various low-friction and low-stress by varying the flow rates of silane gas. Under the about 2% of Si doping is very suitable for improving the adhesion of films and reducing internal stress while maintaining the surfaces hardness of DLC films. Linear ion source (LIS)를 사용하여 Si wafer위에 Si 이온이 첨가된 DLC 박막을 증착하였다. 참가된Si 이온의 양에 따라 DLC 박막에 미치는 영향을 분석하기 위하여 마찰 계수 및 경도를 비교하였고, Micro raman spectroscopy, Field Emission-Scanning Electron Microscope (FM-SEM) and X-ray Photoelectron Spectroscopy (XPS)를 통하여 표면 상태를 분석하였다. 천체 주입된 가스량의 약 2%까지 Si 이온 주입이 늘어날수록 DLC 박막의 마찰계수는 낮아졌고, 경도는 Si 이온이 주입되지 않았을 경우와 비슷한 값(약 20~23 GPa)을 가졌다. 2% 이상의 주입량에서는 마찰계수는 주입량이 늘어날수록 높아졌으며 경도는 떨어지는 경향을 보였다. 이는 Si이온이 2%이하로 첨가되었을 경우, DLC 박막의 생성시 탄소 이온들의 결합 Stress를 줄여 마찰계수가 줄어든다고 볼 수 있으며, 그 양이 2%이상이 되면 오히려 불순물로 작용하여 DLC 박막의 Stress는 급격히 증가하고 마찰계수도 높아짐을 알 수 있다.