• Title/Summary/Keyword: X-ray Photoelectron Spectroscopy

Search Result 1,393, Processing Time 0.027 seconds

Structural Studies of Thin Film Boron Nitride by X-ray Photoelectron Spectroscopy

  • Kim, Jong-Seong
    • Journal of Sensor Science and Technology
    • /
    • v.5 no.1
    • /
    • pp.51-56
    • /
    • 1996
  • Structural properties of rf sputtered boron nitride films were studied as a function of deposition parameters such as nitrogen pressure, substrate temperature and substrate bias using X-ray photoelectron spectroscopy and Auger electron spectroscopy. Composition and information on chemical bonding of resultant films was determined by XPS. XPS core level spectra showed that ratio of boron to nitrogen varied from 3.11 to 1.45 with respect to partial nitrogen pressure. Curve fitting of XPS spectra revealed three kinds of bonding mechanism of boron in the films. XPS peak positions of both B 1s and N 1s shifted to higher energy with higher nitrogen pressure as well as increase in substrate bias voltage. AES was used to see possible contamination of films by carbon or oxygen as well.

  • PDF

방사광을 이용한 표면분석 기술: XPS

  • Park, Yong-Seop
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2012.02a
    • /
    • pp.80-80
    • /
    • 2012
  • 본 튜토리알에서는 표면 및 물질분석 기술로 널리 사용되고 있는 X-ray 광전자분광기술(X-ray Photoelectron Spectroscopy)의 원리와 광전자분광계를 구성하는 요소, 그리고 XPS를 이용하여 시료로부터 얻어낼 수 있는 정보가 무엇인지 등에 대해서 알아본다.

  • PDF

Top-Emitting Organic Light-Emitting Diodes Based on the Interfacial Electronic Structures of Bis(8-Quinolinolato)Aluminum (III)/Barium

  • Im, Jong-Tae;Yeom, Geun-Yeong
    • Proceedings of the Korean Institute of Surface Engineering Conference
    • /
    • 2007.04a
    • /
    • pp.5-6
    • /
    • 2007
  • 반투명 전도성 음극 (semi-transparent conducting cathode)인 Ba (x nm)/Au (20 nm)/ITO (100 nm)을 이용하여 전면발광 유기전계 발광 소자 (top-emitting organic light-emitting didodes, TEOLEDs)를 제작했다. Ba과 bis(8-quinolinolato)aluminum (III) ($Alq_3$) 계면의 전자구조는 엑스선 광전자 분광법 (X-ray photoelectron spectroscopy, XPS), 자외선 광전자 분광법 (ultraviolet photoelectron spectroscopy, UPS) 및 가까운 끝머리 엑스선 흡수 미세구조 (near-edge x-ray absorption fine structure, NEXAFS) 스펙트럼의 광 방출 특성을 통하여 조사되었다. $Alq_3$/Ba 계면 특성에 있어서 XPS와 NEXAFS 특성에 의하면, $Alq_3$ (10.0 nm) 위에 Ba이 연속적으로 증착됨에 따라 Ba으로부터 $Alq_3$로의 전자전달 (electron charge transfer) 특성은 꾸준희 증가된다. 그러나 Ba의 두께가 1.0 nm 이상 초과되면 Ba의 전자전달에 기인한 반응성때문에 $Alq_3$의 분자구조가 해리된다. 한편, 제작된 TEOLEDE의 전류-전압-휘도 곡선의 경우에서도 바륨의 증착 두께가 1.0 nm일 때 가장 우수한 구동특성을 나타냈다.

  • PDF

Structural and component characterization of the B4C neutron conversion layer deposited by magnetron sputtering

  • Jingtao Zhu;Yang Liu;Jianrong Zhou;Zehua Yang;Hangyu Zhu;Xiaojuan Zhou;Jinhao Tan;Mingqi Cui;Zhijia Sun
    • Nuclear Engineering and Technology
    • /
    • v.55 no.9
    • /
    • pp.3121-3125
    • /
    • 2023
  • Neutron conversion detectors that use 10B-enriched boron carbide are feasible alternatives to 3He-based detectors. We prepared boron carbide films at micron-scale thickness using direct-current magnetron sputtering. The structural characteristics of natural B4C films, including density, roughness, crystallization, and purity, were analyzed using grazing incidence X-ray reflectivity, X-ray diffraction, X-ray photoelectron spectroscopy, time-of-flight secondary ion mass spectrometry, and scanning electron microscopy. A beam profile test was conducted to verify the practicality of the 10B-enriched B4C neutron conversion layer. A clear profile indicated the high quality of the neutron conversion of the boron carbide layer.

Preparation and characterization of magnetic nanoparticles with two kinds of core/shell structures (핵/껍질 구조를 가진 두 종류의 자기 나노입자의 제조와 특성비교)

  • 고영재;손인호;김영국;동성용;이근진;박규섭
    • Journal of the Korean Vacuum Society
    • /
    • v.10 no.1
    • /
    • pp.87-92
    • /
    • 2001
  • Magnetic Fe-Co(C) nanocapsules and Fe-Co nanoparticles were prepared by arc-discharge in two kinds of atmospheres, i.e. methane and a mixture of ($H_2$+Ar), respectively. Characterization and magnetic properties of this two kinds of ultrafine particles were investigated systematically by means of X-ray diffraction, Mssbauer spectroscopy, X-ray photoelectron spectroscopy, transmission electron microscopy, energy disperse spectroscopy analysis, chemical analysis, oxygen determination and magnetization measurement. Effects of carbon element, decomposed from a methane atmosphere in carbon arc process, on phase structures, magnetic states and surface characterization were studied in comparison to that of Ar element. Two ultrafine particles showed a little difference in the weight ratio of (Fe/co) and the size for Fe-Co nanoparticles was about two times bigger than Fe-Co(C) nanocapsules. The saturation magnetization of Fe-Co (C) nanocapsules was about 8% higher than that of Fe-Co nanoparticles while their phase constitutions were similar. Although no carbon could be detected by XRD measurement because of extremely thin shells on the surfaces of the cores, it is still believed that they are carbon and oxygen layers.

  • PDF

The Etching Characteristics of Cr Films by Using $Cl_{2}O_{2}$ Gas Mixtures ($Cl_{2}O_{2}$ 가스에 의한 크롬 박막의 식각 특성 고찰)

  • 박희찬;강승열;이상균;최복길;권광호
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.14 no.8
    • /
    • pp.634-639
    • /
    • 2001
  • We investigated the etching characteristics of chromium films by using Cl$_2$/O$_2$ gas mixtures with electron cyclotron resonance plasma. In order to examine the chemical etch characteristics of Cr films by using Cl$_2$/O$_2$ gas plasma, we obtained the etch rate with various gas mixing ratios. By X-ray photoelectron spectroscopy, the surface reaction on the chromium films during the etch was examined. From narrow scan analyses of Cr, Cl, and O, it was confirmed that a chromium oxychlorie (CrCl$_{x}$O$_{y}$) layer was formed on the surface by the etch using Cl$_2$/O$_2$ gas mixtures. We observed a new characteristic emission line during the etch of chromium films using Cl$_2$/O$_2$ gas mixtures by an optical emission spectroscopy. It was found that the peak intensity of this emission line had a tendency compatible with the etch rate. The origin of this emission line was discussed in detail. At the same time, the etched profile was also examined by scanning electron microscope.e.e.

  • PDF

Property Variation of Diamond-like Carbon Thin Film According to the Annealing Temperature (열처리에 따른 Diamond-like Carbon (DLC) 박막의 특성변화)

  • Park, Ch.S.;Koo, K.H.;Park, H.H.
    • Journal of the Microelectronics and Packaging Society
    • /
    • v.18 no.1
    • /
    • pp.49-53
    • /
    • 2011
  • Diamond-like carbon (DLC) films is a metastable form of amorphous carbon containing a significant fraction of Sp3 bond. DLC films have been characterized by a range of attractive mechanical, chemical, tribological, as well as optical and electrical properties. In this study DLC films were prepared by the RF magnetron sputter system on $SiO_2$ substrates using graphite target. The effects of the post annealing temperature on the Property variation of the DLC films were examined. The DLC films were annealed at temperatures ranging from 300 to $500^{\circ}C$ using rapid thermal process equipment in vacuum. The variation of electrical property and surface morphology as a function of annealing treatment was investigated by using a Hall Effect measurement and atomic force microscopy. Raman and X-ray photoelectron spectroscopy analyses revealed a structural change in the DLC films.

XPS study of sapphire substrate surface nitridated by plasma activated nitrogen source (Plasma로 활성화된 질소 원자를 사용한 사파이어 기판 표면의 저온 질화처리의 XPS 연구)

  • 이지면;백종식;김경국;김동준;김효근;박성주
    • Journal of the Korean Vacuum Society
    • /
    • v.7 no.4
    • /
    • pp.320-327
    • /
    • 1998
  • The chemical aspects of nitridated surface of sapphire(0001) have been studied by X-ray photoelectron spectroscopy. Nitridated layer was formed by remote plasma enhanced-ultrahigh vacuum deposition at a low temperature range. It was confirmed that this nitridated surface was mainly consists of AIN layer. The relative amounts of nitrogen reacted with AL on the sapphire surface and their surface morphology were investigated with X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) as a function of radio-frequency power, reaction temperature, and reaction time. The amounts of atomic nitrogen activated by plasma which was subsequently incorporated into sapphire were increased with RF power. But the amounts of nitrogen reacted with AI in sapphire was initially increased and then remained constant. However, the relative amounts of AIN were nearly constant with irrespective of nitridation temperature and time. Furthermore, a depth porfile of nitridated layer with XPS showed that the nitridated surface consisted of three layers with different stoichiometry.

  • PDF

Surface Etching of TiO2 Thin Films Using High Density Cl2/Ar Plasma

  • Woo, Jong-Chang;Joo, Young-Hee;Kim, Chang-Il
    • Transactions on Electrical and Electronic Materials
    • /
    • v.16 no.6
    • /
    • pp.346-350
    • /
    • 2015
  • In this study, we carried out an investigation of the etch characteristics of TiO2 thin films and the selectivity of TiO2 to SiO2 in adaptive coupled C12/Ar plasma. The maximum etch rate of the TiO2 thin film was 136±5 nm/min at a gas mixing ratio of C12/Ar (75%:25%). The X-ray photoelectron spectroscopy (XPS) analysis showed the efficient destruction of oxide bonds by the ion bombardment as well as the accumulation of low volatile reaction products on the etched surface.