• Imaging Science in Dentistry
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• v.40 no.4
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• pp.165-169
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• 2010

Purpose : To survey the radiographic examination protocol for lateral cephalometric radiographic examinations and to measure their patient doses in Korea and to compare the dose according to the size of hospital, the type of image receptor system, and the installation duration. Materials and Methods : The radiographic examination protocols (kVp, mA, and exposure time) for lateral cephalometric radiography were surveyed with 61 cephalometric radiographic equipments and their patient dose-area product (DAP) measured with a DAP meter (DIAMENTOR M4-KDK, PTW, Freiburg, Germany) for 51 cephalometric radiographic equipments. The radiographic examination protocols and patient doses were compared according to the size of hospital (university dental hospital, dental hospital, and dental clinic), the type of image receptor system (film-based, DR and CR type) and the installation duration, respectively. SPSS 12.0.1 for Windows (SPSS Inc., Chicago, USA) was used for independent t-test and ANOVA test. Results : The average protocols were 77.0 kVp, 12.7 mA, 6.2 second for cephalometric radiography. The average patient dose (DAP) was $128.0mGy\;cm^2$ and 3rd quartile dose (DAP) $161.1mGy\;cm^2$ for cephalometric radiography for adult male. There was no statistically significant difference at average patient DAP according to the size of hospital, the type of image receptor system, and the installation duration, repectively. Conclusion : The average patient dose was $128.0mGy\;cm^2$ and the third quartile patient dose $161.1mGy\;cm^2$ for lateral cephalometric radiography for adult male in Korea.

• The Journal of Korean Academy of Prosthodontics
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• v.45 no.6
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• pp.795-804
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• 2007

Statement of problem. Nano-scale calcium-phosphate coating on the anodizing titanium surface using ion beam-assisted deposition (IBAD) has been recently introduced to improve the early osseointegration. However, not much is known about their surface characteristics that have influence on tissue-implant interaction. Purpose. This study was aimed to investigate microtopography, surface roughness, surface composition, and wettability of the titanium surface modified by the anodic oxidation and calcium phosphate coating using IBAD. Material and methods. Commercially pure titanium disks were used as substrates. The experiment was composed of four groups. Group MA surfaces represented machined surface. Group AN was anodized surface. Group CaP/AN was anodic oxidized and calcium phosphate coated surfaces. Group SLA surfaces were sandblasted and acid etched surfaces. The prepared titanium discs were examined as follows. The surface morphology of the discs was examined using SEM. The surface roughness was measured by a confocal laser scanning microscope. Phase components were analyzed using thin-film x-ray diffraction. Wettability analyses were performed by contact angle measurement with distilled water, formamide, bromonaphtalene and surface free energy calculation. Results. (1) The four groups showed specific microtopography respectively. Anodized and calcium phosphate coated specimens showed multiple micropores and tiny homogeneously distributed crystalline particles. (2) The order of surface roughness values were, from the lowest to the highest, machined group, anodized group, anodized and calcium phosphate deposited group, and sandblasted and acid etched group. (3) Anodized and calcium phosphate deposited group was found to have titanium and titanium anatase oxides and exhibited calcium phosphorous crystalline structures. (4) Surface wettability was increased in the order of calcium phosphate deposited group, machined group, anodized group, sandblasted and acid etched group. Conclusion. After ion beam-assisted deposition on anodized titanium, the microporous structure remained on the surface and many small calcium phosphorous crystals were formed on the porous surface. Nanoscale calcium phosphorous deposition induced roughness on the microporous surface but hydrophobicity was increased.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.9
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• pp.717-723
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• 2009

Ni/Al ('/' denotes deposition sequence) contacts were deposited on Al-implanted 4H-SiC for ohmic contact formation, and the conduction properties were characterized and compared with those of Ni-only contacts. The thicknesses of the Ni and Al thin film were 30 nm and 300 nm, respectively, and the films were sequentially deposited bye-beam evaporation without vacuum breaking. Rapid thermal anneal (RTA) temperature was varied as follows : $840^{\circ}C$, $890^{\circ}C$, and $940^{\circ}C$. The specific contact resistivity of the Ni contact was about $^{\sim}2\;{\pm}\;10^{-2}\;{\Omega}{\cdot}cm^2$, However, with the addition of Al overlayer, the specific contact resistivity decreased to about $^{\sim}2\;{\pm}\;10^{-4}\;{\Omega}{\cdot}cm^2$, almost irrespective of RTA temperature. X-ray diffraction (XRD) analysis of the Ni contact confirmed the existence of various Ni silicide phases, while the results of Ni/Al contact samples revealed that Al-contaning phases such as $Al_3Ni$, $Al_3Ni_2$, $Al_4Ni_3$, and $Ab_{3.21}Si_{0.47}$ were additionally formed as well as the Ni silicide phases. Energy dispersive spectroscopy (EDS) spectrum showed interfacial reaction zone mainly consisting of Al and Si at the contact interface, and it was also shown that considerable amounts of Si and C have diffused toward the surface. This indicates that contact resistance lowering of the Ni/Al contacts is related with the formation of the formation of interfacial reaction zone containing Al and Si. From these results, possible mechanisms of contact resistance lowering by the addition of Al were discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.113-113
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• 2008

Cu CMP (Chemical Mechanical Planarization) has been used to remove copper film and obtain a planar surface which is essential for the semiconductor devices. Generally, it is known that chemical reaction is a dominant factor in Cu CMP comparing to Silicon dioxide CMP. Therefore, Cu CMP slurry has been regarded as an important factor in the entire process. This investigation focused on understanding the effect of corrosion inhibitor on copper surface and CMP results. Benzotriazole (BTA) was used as a corrosion inhibitor in this experiment. For the surface analysis, electrochemical characteristics of Cu was measured by a potentiostat and surface modification was investigated by X-ray photoelectron spectroscopy (XPS). As a result, corrosion potential (Ecorr) increased and nitrogen concentration ratio on the copper surface also increased with BTA concentration. These results indicate that BTA prevents Cu surface from corrosion and forms Cu-BTA layer on Cu surface. CMP results are also well matched with these results. Material removal rate (MRR) decreased with BTA concentration and static etch rate also showed same trend. Consequently, adjustment of BTA concentration can give us control of step height variation and furthermore, this can be applicable for Cu pattern CMP.

• Korean Chemical Engineering Research
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• v.56 no.5
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• pp.705-710
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• 2018

An electrochemical glucose sensor with enzyme-free was fabricated using Pt nanoparticles (Pt NPs) decorated CuO nanoflowers (CuO NFs). 3-D CuO nanoflowers film was directly synthesized on Cu foil by a simple hydrothermal method and Pt NPs were dispersed on the petal surface of CuO NFs through electrochemical deposition. This prepared sample was noted to Pt NPs-CuO NF. Morphology of the Pt NPs-CuO NFs layer was analyzed using scanning electron microscopy (SEM) and energy-dispersive X-ray spectroscopy (EDS). The electrochemical properties and sensing performances were investigated using cyclic voltammetry (CV) and chronoamperometry (CA) under alkaline condition. The sensor exhibited a high sensitivity, wide liner range and fast response time. Its excellent sensing performance was attributed to the synergistic effect of the Pt NPs and CuO nanostructure.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.5
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• pp.185-190
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• 2002

Capacitor material utilized in the downsizing passive devices and dynamic random access memory(DRAM) requires the physical and electrical properties at given area such as capacitor thickness reduction, relative dielectric constant increase, low leakage current and thermal stability. Common capacitor materials, $SiO_2$, $Si_3N_4$, $SiO_2$/$Si_3N_4$,TaN and et al., used until recently have reached their physical limits in their application to several hundred angstrom scale capacitor. $Ta_2O_{5}$ is known to be a good alternative to the existing materials for the capacitor application because of its high dielectric constant (25 ~35), low leakage current and high breakdown strength. Despite the numerous investigations of $Ta_2O_{5}$ material, there have little been established the clear understanding of the annealing effect on capacitance characteristic and conduction mechanism, design and fabrication for $Ta_2O_{5}$ film capacitor. This study presents the structure-property relationship of reactive-sputtered $Ta_2O_{5}$ MIM capacitor structure processed by annealing in a vacuum. X-ray diffraction patterns skewed the existence of amorphous phase in as-deposited condition and the formation of preferentially oriented-$Ta_2O_{5}$ in 670, $700^{\circ}C$ annealing. On 670, $700^{\circ}C$ annealing under the vacuum, the leakage current decrease and the enhanced temperature-capacitance characteristic stability. and the leakage current behavior is stable irrespective of applied electric field. The results states that keeping $Ta_2O_{5}$ annealed at vacuum gives rise to improvement of electrical characteristics in the capacitor by reducing oxygen-vacancy and the broken bond between Ta and O.

• Transactions on Electrical and Electronic Materials
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• v.10 no.3
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• pp.93-96
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• 2009

The Al-doped ZnO (AZO) films were deposited on a glass substrate by RF magnetron sputtering in pure Ar and $Ar+H_2$ gas ambient at temperature of $100^{\circ}C$ and annealed in hydrogen ambient at the temperature range from 100 to 300 $^{\circ}C$, respectively. It was found that either the addition of hydrogen to the sputtering gas or the annealing treatment effectively reduced the resistivity of the AZO films. When the AZO films were annealed at the temperature of 300 $^{\circ}C$ for lhr in a hydrogen atmosphere, the resistivity decreased from $2.60{\times}10^{-3}\;{\Omega}cm$ to $8.42{\times}l0^{-4}\;{\Omega}cm$ for the film deposited in pure Ar gas ambient. Under the same annealing conditions of temperature and hydrogen ambient, the resistivity of AZO films deposited in the $Ar+H_2$ gas mixture decreased from $8.22{\times}l0^{-4}\;{\Omega}cm$ to $4.25{\times}l0^{-4}\;{\Omega}cm$. The lowest resistivity of $4.25{\times}l0^{-4}\;{\Omega}cm$ was obtained by adding hydrogen gas to the deposition and annealing process. X-ray diffraction (XRD) pattern of all films showed preferable growth orientation of (002) plane. The average transmittance is above 85 % and in the range of 400-1000 nm for all films.

• ETRI Journal
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• v.16 no.1
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• pp.45-57
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• 1994

The effects of reactive ion etching (RIE) of $SiO_2$ layer in $CHF_3/C_2F_6$ on the underlying Si surface have been studied by X-ray photoelectron spectroscopy (XPS), secondary ion mass spectrometer, Rutherford backscattering spectroscopy, and high resolution transmission electron microscopy. We found that two distinguishable modified layers are formed by RIE : (i) a uniform residue surface layer of 4 nm thickness composed entirely of carbon, fluorine, oxygen, and hydrogen with 9 different kinds of chemical bonds and (ii) a contaminated silicon layer of about 50 nm thickness with carbon and fluorine atoms without any observable crystalline defects. To search the removal condition of the silicon surface residue, we monitored the changes of surface compositions for the etched silicon after various post treatments as rapid thermal anneal, $O_2$, $NF_3$, $SF_6$, and $Cl_2$ plasma treatments. XPS analysis revealed that $NF_3$ treatment is most effective. With 10 seconds exposure to $NF_3$ plasma, the fluorocarbon residue film decomposes. The remained fluorine completely disappears after the following wet cleaning.

• Maxillofacial Plastic and Reconstructive Surgery
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• v.22 no.3
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• pp.343-350
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• 2000

The goal of this study is the comparison of upper airway size and change of skeletal Class I group and skeletal Class III group (before operation, within 2 weeks after operation, 6 months after operation) respectively. At first, we measured the lines between selected upper air way landmarks on lateral cephalometric x-ray film of skeletal Class I 40 persons whoes age were 23-26 years old, ,and did the same lines of landmarks of skeletal Class III 44 persons who had not been operated yet, were within 2 weeks after operation, were 6 months after operation. And we compared it respectively and analyzed it with paired t-test. We studied the relationship of those on produced data. 1. Skeletal Class III group was narrower in nasopharyngeal air way space than that of skeletal Class I group, and increased in thickness of oropharyngeal, hypopharyngeal wall within 2 weeks after operation, and reduced in nasopharyngeal, oropharyngeal air way space, and did in thickness of nasopharngeal, hypopharyngeal wall 6 months after operation. 2. Skeletal Class III group reduced in nasopharyngeal, oropharyngeal air way space, and increased in thickness of nasopharyngeal, oropharyngeal, hypopharyngeal wall within 2 weeks after operation, restored the thickness of nasopharyngeal, oropharyngeal wall, but did not restored nasopharyngeal, oropharyngeal, hypopharyngeal air way space. 3. Vertical length from hyoid bone to mandibular plane did not have signifacant difference from Class I group but after operation, it increased more than Class I group significantly. 4. The size of airway reduced after operation. Among this, oropharyngeal airway most reduced.

• Journal of Korean Academy of Oral and Maxillofacial Radiology
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• v.28 no.1
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• pp.7-16
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• 1998

The Scanora/sup (R)/ X-ray unit uses the principles of narrow beam radiography and spiral tomography. Starting with a panoramic overview as a scout image. multiple tomographic projections could be selected. This study evaluated the accuracy of spiral tomography in comparison to routine panoramic radiography for dental implant treatment planning. An experimental study was performed on a cadaver mandible to assess the accuracy of panoramic radiography and spiral tomography film images for measurement of metallic spheres. After radiographic images of the metallic spheres on the surgical stent were measured and corrected for a fixed magnification of radiographic images. following results were obtained. 1. In the optimal position of the mandible. the minimal horizontal and vertical distortion was evident in the panoramic radiography images. The mean horizontal and vertical magnification error in anterior sites was 5.25％ and 0.75％. respectively. The mean horizontal and vertical magnification error in posterior sites was 0.50％ and 1.50％. respectively. 2. In the displaced forward or in an eccentric position of the mandible. the magnification error of the panoramic radiography images increased significantly over the optimal position. Overall, the mean horizontal magnification error of the anterior site in the different positions changed dramatically within a range of -17.25％ to 39.00％, compared to the posterior range of -5.25％ to 8.50％. However, the mean vertical magnification error stayed with the range of 0.5％ to 3.75％ for all the mandibular positions. 3. The magnification effects in the tomographic scans were nearly identical for the anterior and posterior with a range of 2.00％ to 5.75％ in the horizontal and 4.50％ to 5.50％ in the vertical dimension, respectively. 4. A statistically significant difference between the anterior and posterior measurements was found in the horizontal measurements of the panoramic radiography images of the displaced forward and backward position of the mandible(P<0.05). Also a significant difference between the optimal panoramic and tomographic projections was found only in the vertical measurement(P<0.05).