• Journal of the Korean Vacuum Society
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• v.4 no.S2
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• pp.30-33
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• 1995

By using X-ray double crystal diffraction technique the multilayer structure composed of glass membrane, platinum film and $\alpha Al_2O_3$ substrate has been studied. It is found the stress is produced in the film by thermal mismatch within multilayer materials. The measuring results of thin film platinum resistors show that the stress were induce resistance change of device and different stress status will produce add resistance in different direction. Selecting proper glass material can make opposite stress in Pt film and opposite add resistance due to thermal mismatch. The reliability of Pt resistor has been improved with method of this stress compensation.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2005.10a
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• pp.418-422
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• 2005

In this study, the die design and die series on the surface residual stress of cold drawn eutectoid steel wire has been investigated. Test pieces were fabricated using die series with different mean and final reduction ratio. Surface residual stresses in the axial direction were measured by X-ray diffraction, Broker's 2-dimensional GADDS system. Results were compared with stress profiles which were calculated by 3D and 2D finite element simulation, Hibbitt's ABAQUS 6.4 program in Finite Element Analysis. By means of FEA method, optimal die shape considering delta-parameter were induced and applied in order to determine die sequence designs. Balance of the drawing stresses was also introduced to optimize die sequence.

• Transactions of Materials Processing
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• v.15 no.2 s.83
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• pp.153-157
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• 2006

In this study, the die design and die series on the surface residual stress of cold drawn eutectoid steel wire have been investigated. Test pieces were fabricated using die series with different mean and final reduction ratios. Surface residual stresses in the axial direction were measured by X-ray diffraction, Bruker's 2-dimensional GADDS system. The results were compared with stress profiles that were calculated by 3D and 2D finite element simulations, ABAQUS 6.4 program in finite element analysis(FEA). By means of the FEA method, optimal die shape considering delta-parameter were induced and applied in order to determine die sequence designs. Balance of the drawing stresses was also introduced to optimize die sequence.

• Archives of Pharmacal Research
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• v.25 no.1
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• pp.25-27
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• 2002

The crystal structure of KR-21042, N-(3-Phenylpropyl )-4-hydroxy-3-methoxyphenylacetamide, was determined by single crystal X-ray diffraction analysis. The compound was recrystallized from a mixture of ethylacetate and n-hexane in monoclinic, space group $P2_1/c$, with a = 16.622(1), b = 6.215(1), c = 15.802(1) ${\AA},{\;}{\beta}=104.97(1)$, and Z = 4 The calculated density is $1.261{\;}g/cm^3$The structure was solved by the direct method and refined by full matrix least-squares procedure to the fecal R value of 0.068 for 2332 observed reflections.

• Bulletin of the Korean Chemical Society
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• v.35 no.4
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• pp.1177-1181
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• 2014

A 2D grid-like (4, 4)-connected topology coordination polymer, $[Co(BTA)_2(H_2O)_2]_n$ (1), where HBTA = 2-(1H-benzotriazol-1-yl)acetic acid, has been synthesized by hydrothermal method and characterized by single crystal X-ray diffraction, IR spectroscopy, elemental analysis and surface photovoltage spectroscopy (SPS). X-ray diffraction analyses indicated that 1 displays octahedral metal centers with secondary building units (SBUs) [$Co(BTA)_2(H_2O)_2$] bridged by the $BTA^-$ ligands. In the crystal, the 2D supramolecular architecture is further supported by $O-H{\cdots}O$, $O-H{\cdots}N$, $C-H{\cdots}O$ hydrogen bonds and ${\pi}{\cdots}{\pi}$ stacking interactions. The SPS of polymer 1 indicates that there are positive response bands in the range of 300-600 nm showing photo-electric conversion properties. There are good relationships between SPS and UV-Vis spectra.

• Archives of Pharmacal Research
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• v.19 no.1
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• pp.71-73
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• 1996

The molecular structure of pirprofen, 3-chloro-4-(2,5-dihydro-1H-pyrrol-1-yl)-.alpha.-methyl-benzeneacetic acid, was determined by single crystal X-ray diffraction analysis. The compound was recrystallized from a mixture of chloroform and toluene in triclinic, space group P over $\bar1,\; with\; a=4.577(1),\; b=11.213(2),\; C=12.485(2){\AA},\alpa.=107.39(1),\;\beta=97.79(1),\;\gamma=92.03(2),\; and Z=2$ The calculated density is $1.384 g/cm^3$. The structure was solved by the direct method and refined by full matrix least-squares procedure to the final R value of 0.034 for 1681 independent reflections. The non-aromatic dihydropyrrol group is found to be coplanar to the central aromatic ring. The molecules are dimerized through the intermolecular hydrogen bonds at the carboxyl group in the crystal.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.7
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• pp.641-646
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• 2003

The dielectric carbon nitride thin films were deposited onto Si(100) substrate using a pulsed laser ablation of pure graphite target combined with a high voltage discharge plasma in the presence of a N$_2$ reactive gas. We calculated dielectric constant, $\varepsilon$$\_$s/, with a capacitance Schering bridge method. We investigated the influence of the laser ablation of graphite target and DC high voltage source for the plasma. The properties of the deposited carbon nitride thin films were influenced by the high voltage source during the film growth. Deposition rate of carbon nitride films were increased drastically with the increase of high voltage source. Infrared absorption clearly shows the existence of C=N bonds and C=N bonds. The carbon nitride thin films were observed crystalline phase confirmed by x-ray diffraction data.

• Electronic Materials Letters
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• v.14 no.6
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• pp.784-792
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• 2018

In this letter, a standard deviation based optimization technique has been applied on High Resolution X-ray Diffraction symmetric and asymmetric scan results to accurately determine the Aluminum molar fraction and lattice relaxation of Molecular Beam Epitaxy grown compositionally graded Aluminum Gallium Nitride (AlGaN)/Aluminum Nitride/Gallium Nitride (GaN) heterostructures. Mathews-Blakeslee critical thickness model has been applied in an alternative way to determine the partially relaxed AlGaN epilayer thicknesses. The coupling coefficient determination has been presented in a different perspective involving sample tilt method by off set between the asymmetric planes of GaN and AlGaN. Sample tilt is further increased to determine mosaic tilt ranging between $0.01^{\circ}$ and $0.1^{\circ}$.

• Bulletin of the Korean Chemical Society
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• v.20 no.4
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• pp.417-421
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• 1999

The complex, K3[La(TTHA)]5H,O, was prepared and its crystal structure was analyzed by single crystal X-ray diffraction method. In the complex, the La(Ⅲ) ion adopts a ten-coordinate geometry with four nitrogen atoms and six carboxyl oxygen atoms from the same TTHA ligand molecule. Its coordination polyhedron can be described as a distorted bicapped square antiprism. Each [La(TTHA)]3- anion is linked by K+ cations via carboxyl groups of TTHA ligand to form a three dimensional crystal structure. The thermal properties were investigated by TG and DTA techniques in argon atmosphere. The materials resulting from thermal treatment were La(OH)3 and K2O which were identified by powder X-ray diffraction technique.

• Journal of the Korean institute of surface engineering
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• v.32 no.3
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• pp.360-362
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• 1999

Formation of the nickel-cadmium alloy in the negative electrode of nickel-cadmium cell subjected to continuous charging at elevated temperatures ($40~45^{\circ}C$) is shown to be one of the causes of the 'stepped' discharge curves. The alloy has been characterized by electrode potential measurement and X-ray diffraction method. The potential lowering during discharge is related to discharge of the alloy. X -ray diffraction suggests that the nickel-cadmium alloy can be formed during charge in negative electrode by interaction of the two metals. Addition of Ni $(OH)_2$ into $Cd{\;}(OH)_2$ active material is found to form the alloy more readily than sintered negative electrode alone.ode alone.