• 대한방사선기술학회지:방사선기술과학
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• 제29권4호
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• pp.275-284
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• 2006

본 연구는 X-선을 생쥐 생체에 조사한 후, 방사선 조사선량에 따른 난소조직의 형태적 변화를 Masson's trichrome, 세망섬유 염색법 등의 조직화학반응을 확인한 결과 X-선을 조사한 난소조직은 방사선량이 증가함에 따라 성장 난포의 형태적 변화가 뚜렷하였으며, 특히 과립층세포의 변성에 의한 핵은 응축과 투명대의 변화가 현저하였다. 또한 Masson's trichrome 염색과 세망섬유 염색을 통한 조직화학반응의 결과 과립층세포의 변화와 난포기저막의 변형, 그리고 세망섬유의 비정상적 배열이 확인되었다.

• Molecules and Cells
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• 제40권5호
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• pp.355-362
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• 2017

The ${\beta}2$ integrins are cell surface transmembrane proteins regulating leukocyte functions, such as adhesion and migration. Two members of ${\beta}2$ integrin, ${\alpha}M{\beta}2$ and ${\alpha}X{\beta}2$, share the leukocyte distribution profile and integrin ${\alpha}X{\beta}2$ is involved in antigen presentation in dendritic cells and transendothelial migration of monocytes and macrophages to atherosclerotic lesions. ${\underline{R}}eceptor$ for ${\underline{a}}dvanced$ ${\underline{g}}lycation$ ${\underline{e}}nd$ ${\underline{p}}roducts$ (RAGE), a member of cell adhesion molecules, plays an important role in chronic inflammation and atherosclerosis. Although RAGE and ${\alpha}X{\beta}2$ play an important role in inflammatory response and the pathogenesis of atherosclerosis, the nature of their interaction and structure involved in the binding remain poorly defined. In this study, using I-domain as a ligand binding motif of ${\alpha}X{\beta}2$, we characterize the binding nature and the interacting moieties of ${\alpha}X$ I-domain and RAGE. Their binding requires divalent cations ($Mg^{2+}$ and $Mn^{2+}$) and shows an affinity on the sub-micro molar level: the dissociation constant of ${\alpha}X$ I-domains binding to RAGE being $0.49{\mu}M$. Furthermore, the ${\alpha}X$ I-domains recognize the V-domain, but not the C1 and C2-domains of RAGE. The acidic amino acid substitutions on the ligand binding site of ${\alpha}X$ I-domain significantly reduce the I-domain binding activity to soluble RAGE and the alanine substitutions of basic amino acids on the flat surface of the V-domain prevent the V-domain binding to ${\alpha}X$ I-domain. In conclusion, the main mechanism of ${\alpha}X$ I-domain binding to RAGE is a charge interaction, in which the acidic moieties of ${\alpha}X$ I-domains, including E244, and D249, recognize the basic residues on the RAGE V-domain encompassing K39, K43, K44, R104, and K107.

• 한국환경과학회지
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• 제5권3호
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• pp.317-327
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• 1996

This study was performed to develop the biological treatment technology of wastewater polluted with heavy metals. Zinc-tolerant microorganism, such as Pseudomonas chlororaphis which possessed the ability to accumulate zinc, was isolated from industrial wastewaters polluted with various heavy metals. The characteristics of zinc accumulation in the cells, recovery of the zinc from the cells accumulating zinc, were investigated. Removal rate of zinc from the solution containing 100 mall of Zinc by zinc-tolerant microorganism was more than 90% at 48 hours after inoiulation of the microorganisms. A large number of the electron-dense granules were found mainly on thIn cell wall and membrane fractions, when determined by transmission electron microscope. Energy dispersive X- ray spectroscopy revealed that the electron-dense granules were zinc complex with the substances binding Heavy metals. The zinc accumulated into cells was not desorbed by distilled water, but more than 80% of the zinc accumulated was desorbed by 0.1M-EDTA. The residues of the cells after combustion at 55$0^{\circ}C$ amounted to about 21% of the dry weight of the cells. EDS analysis showed that the residues were comparatively pure zinc compounds containing more than 79% of zinc.

• Current Photovoltaic Research
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• 제3권3호
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• pp.75-79
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• 2015

Recently, $Cu_2ZnSn(S_xSe_{1-x})_4$ (CZTSSe) has been received a tremendous attraction as light absorber material in thin film solar cells (TFSCs), because of its earth abundance, inexpensive and non-toxic constituents and versatile material characteristics. Kesterite CZTSSe thin films were synthesized by sulfo-selenization of sputtered Cu/Sn/Zn stacked metallic precursors. The sulfo-selenization of Cu/Sn/Zn stacked metallic precursor thin films has been carried out in a graphite box using rapid thermal annealing (RTA) technique. Annealing process was done under sulfur and selenium vapor pressure using Ar gas at $520^{\circ}C$ for 10 min. The effect of tuning Se/(S+Se) precursor composition ratio on the properties of CZTSSe films has been investigated. The XRD, Raman, FE-SEM and XRF results indicate that the properties of sulfo-selenized CZTSSe thin films strongly depends on the Se/(S+Se) composition ratio. In particular, the CZTSSe TFSCs with Se/(S+Se) = 0.37 exhibits the best power conversion efficiency of 4.83% with $V_{oc}$ of 467 mV, $J_{sc}$ of $18.962mA/cm^2$ and FF of 54%. The systematic changes observed with increasing Se/(S+Se) ratio have been discussed in detail.

• 반도체디스플레이기술학회지
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• 제13권3호
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• pp.27-33
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• 2014

To develop high efficiency crystalline solar cells, the $SiN_x$ film for surface passivation and anti-reflection coating is very important and it is generally deposited by PECVD. In this paper, the $SiN_x$ film deposited by Hot-Wire chemical vapor deposition(HWCVD) that has no plasma damage was studied. First, to optimize the $SiN_x$ film deposition process, $SiH_4$ gas rate and substrate temperature were varied and then refractive index and thickness were measured. When $SiH_4$ gas rate was 22sccm and substrate temperature was $100^{\circ}C$, refractive index was 1.94 and higher than that of other process conditions. Second, the lifetime was measured by varying the annealing temperature and time. The annealing process was made from 5 to 30 minutes at $300{\sim}500^{\circ}C$. When the annealing temperature was $100^{\circ}C$ and time was 10minute, the lifetime was the highest. The lifetime of annealed samples was also measured after the firing process at $975^{\circ}C$. Although the lifetime of all samples was decreased by firing process, the lifetime of annealed samples before the firing process was higher than that of fired samples only. Finally, the characteristics of solar cells with HWCVD $SiN_x$ film were measured.

• Journal of Gynecologic Oncology
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• 제29권6호
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• pp.99.1-99.11
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• 2018

Objective: The present study is to evaluate the biological functions of long non-coding RNA (lncRNA), X-inactive specific transcript, X-inactive specific transcript (XIST) in human epithelial ovarian cancer (EOC). Methods: XIST was upregulated in EOC cell lines, CAOV3 and OVCAR3 cells by lentiviral transduction. The effects of XIST overexpression on cancer cell proliferation, invasion, chemosensitivity and in vivo tumor growth were investigated, respectively. Possible sponging interaction between XIST and human microRNA hsa-miR-214-3p was further evaluated. Furthermore, hsa-miR-214-3p was overexpressed in XIST-upregulated CAOV3 and OVCAR3 cells to evaluate its effect on XIST-mediated EOC regulation. Results: Lentivirus-mediated XIST upregulation had significant anticancer effects in CAOV3 and OVCAR3 cells by suppressing cancer cell proliferation, invasion, increasing cisplatin chemosensitivity and inhibiting in vivo tumor growth. Hsa-miR-214-3p was confirmed to directly bind XIST, and inversely downregulated in XIST-upregulated EOC cells. In EOC cells with XIST upregulation, secondary lentiviral transduction successfully upregulated hsa-miR-214-3p expression. Subsequently, hsa-miR-214-3p upregulation functionally reversed the anticancer effects of XIST-upregulation in EOC. Conclusion: Upregulation of lncRNA XIST may suppress EOC development, possibly through sponging effect to induce hsa-miR-214-3p downregulation

• 한국수정란이식학회지
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• 제9권1호
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• pp.1-6
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• 1994

This experiment was investigated the effect of presence of granulosa cells from follicles of different size on bovine oocyte maturation, cleavage and development to late stage. The nuclear and cytoplasmic maturation of oocytes in the IVM-IVF system are critical for subsequent embryo development. Granulosa cells when the co-cultured with oocytes may interact with cumulus-oocytes complexes and influence the development competence of the oocytes. Granulosa cells from medium (2~6 mm) and large(>1O mm) size follicles were recovered by aspiration, washed 3 times by centrifugation at 500 x g for 5 min. and used for co-culture at a concentration of 2~3 x 106 cells/mi. The oocytes were matured in vitro (IVM) for 24 hrs. in TCM-199 supplemented with 35 $\mu$g/ml FSH, 10 $\mu$g/ml LH, 1 $\mu$g/ml estradiol-17$\beta$ and granulosa cells at 39$^{\circ}C$ under 5% $CO_2$ in air. They were fertilized in vitro (IVF) by epididymal spermatozoa treated with heparin for 24 hrs., and then the zygotes were co-cultured in vitro (I VC) with bovine oviductal epithelial cells for 7 to 9 days. The assessment of maturation revealed that Grade J oocytes showed significantly(P

• 한국동물학회지
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• 제14권4호
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• pp.175-180
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• 1971

5-AU (5-aminouracil)를 처리하므로써 세포분열의 동시화를 촉진시킨 사람의 신장세포의 분열활동, 염색체 이상 및 DNA복제 양상에 미치는 X-선의 영향을 조직배양 및 자기방사법(autoradiography)을 통하여 추구하였다. 5-AU처리구에서 분열활동의 최고점은 5-AU를 처리한 뒤 10시간에서 나타나며, 대조구에 비해서 6배나 높음을 보여준다. 5-AU 처리후 100R의 X-선을 조사한 실험구에서는 X-선의 영향은 주로 세포분열을 지연시키고 분열활동을 저해시킬 뿐 아니라 분열활동의 최고점을 보여주는 시간을 불규칙하게 한다. 대조구에서 세포당 염색체이상율은 0.030에 불과하나 5-AU를 처리할 경우는 0.147로 높아진다. 한편 5-AU+100R 및 5-AU+200R의 X-선 처리구에서 세포당 염색체 이상율은 각각 0.583 및 0.669로 보다 높아짐을 보겠다. 한편 세포당 1R당 평균 염색체 이상율은 0.0035가 된다. 본 실험결과를 통해 보면 5-AU가 표지된 분열상의 출\ulcorner빈도 및 표지강도를 높이고 있음을 알겠는데, 그것은 5-AU가 세포주기중 S기에 놓인 세포를 축적시키는 힘이 있기때문이라고 보겠다. 이와는 반대로 X-선은 세포의 표지강도와 표지된 분열상의 출현빈도를 저하시킨다.

• Current Photovoltaic Research
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• 제3권1호
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• pp.16-20
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• 2015

Ag addition in chalcopyrite materials is known to lead beneficial changes in aspects of structural and electronic properties. In this work, the effects of Ag alloying of $Cu(In,Ga)Se_2$-based solar cells has been investigated. Wide bandgap $(Ag,Cu)(In_{1-x},Ga_x)Se_2$ (x = 0.75~0.8) films have been deposited using a three-stage co-evaporation with various Ag/(Ag+Cu) ratios. With Ag alloying the $(Ag,Cu)(In_{1-x},Ga_x)Se_2$ (x~0.8) films were found to have greater grainsize and film thickness. Device were also fabricated with the $(Ag,Cu)(In_{1-x},Ga_x)Se_2$ (x~0.8) films and their J-V and quantum efficiency measurements were carried out. The highest-efficiency $(Ag,Cu)(In_{1-x},Ga_x)Se_2$ solar cell with Eg > 1.5 eV had an efficiency of 12.2% with device parameters $V_{OC}=0.810V$, $J_{SC}=21.7mA/cm^2$, and FF = 69.0%.

• 한국재료학회지
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• 제20권11호
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• pp.586-591
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• 2010

Solar cells have been more intensely studied as part of the effort to find alternatives to fossil fuels as power sources. The progression of the first two generations of solar cells has seen a sacrifice of higher efficiency for more economic use of materials. The use of a single junction makes both these types of cells lose power in two major ways: by the non-absorption of incident light of energy below the band gap; and by the dissipation by heat loss of light energy in excess of the band gap. Therefore, multi junction solar cells have been proposed as a solution to this problem. However, the $1^{st}$ and $2^{nd}$ generation solar cells have efficiency limits because a photon makes just one electron-hole pair. Fabrication of all-silicon tandem cells using an Si quantum dot superlattice structure (QD SLS) is one possible suggestion. In this study, an $SiO_x$ matrix system was investigated and analyzed for potential use as an all-silicon multi-junction solar cell. Si quantum dots with a super lattice structure (Si QD SLS) were prepared by alternating deposition of Si rich oxide (SRO; $SiO_x$ (x = 0.8, 1.12)) and $SiO_2$ layers using RF magnetron co-sputtering and subsequent annealing at temperatures between 800 and $1,100^{\circ}C$ under nitrogen ambient. Annealing temperatures and times affected the formation of Si QDs in the SRO film. Fourier transform infrared spectroscopy (FTIR) spectra and x-ray photoelectron spectroscopy (XPS) revealed that nanocrystalline Si QDs started to precipitate after annealing at $1,100^{\circ}C$ for one hour. Transmission electron microscopy (TEM) images clearly showed SRO/$SiO_2$ SLS and Si QDs formation in each 4, 6, and 8 nm SRO layer after annealing at $1,100^{\circ}C$ for two hours. The systematic investigation of precipitation behavior of Si QDs in $SiO_2$ matrices is presented.