• KSBB Journal
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• 제7권3호
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• pp.201-208
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• 1992

일부의 EGF receptor 에는 EGF 가 세포표면에서 receptor 와 결합할 때 보다 높은 친화력(high affinity)을 보이고 있는데 그 이유를 설명하기 위해서 EGF receptor 의 cytoplasmic 영역을 절단하여 EGF 와의 친화력을 측정하였다. Scatchard plot 의 결과 1022 아미노산 이하로 절단된 receptor 는 high affinity 특성을 상실하였다. Triton X-100로 세포막을 제거하여 cytoskeleton 이 EGF receptor 의 구조에 미치는 영향을 조사한 결과 cytoskeleton과 결합한 receptor 보다 EGF 에 대해서 더 높은 친화력을 보였다. 따라서 cytoskeleton 이 high affinity EGF receptor 를 형성하는데 영향을 미치고 receptor 와 cytoskeleton 의 가능한 결합부위는 1022-1186 아미노산 사이인 것 같다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.163.2-163.2
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• 2014

We report catalytic decomposition of few-layer graphene on an $Au/SiO_x/Si$ surface wherein oxygen is supplied by dissociation of the native $SiO_x$ layer at a relatively low temperature of $400^{\circ}C$. The detailed chemical evolution of the graphene covered $SiO_x/Si$ surface with and without gold during the catalytic process is investigated using a spatially resolved photoelectron emission method. The oxygen atoms from the native $SiO_x$ layer activate the gold-mediated catalytic decomposition of the entire graphene layer, resulting in the formation of direct contact between the Au and the Si substrate. The notably low contact resistivity found in this system suggests that the catalytic depletion of a $SiO_x$ layer could realize a new way to micromanufacture high-quality electrical contact.

• 한국동물학회지
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• 제37권1호
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• pp.104-112
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• 1994

한국산 야생 생쥐(Mus muscurus subspecies)와 동계교배 계통인 BALB/c의 정모세포에서 감수분열에 따른 염색체의 chiasma 말단화 여부와 chiasma 빈도, X-Y 염색체의 조기 분리 빈도 등을 조사하였다 한국산 야생 생쥐에서는 chiasma 말단화가 일어나지 않는 것으로 나타나 말단 chiasma는 말단 부위에 특이적으로 생긴 chiasma로 생각되며, chiasma 빈도의 감소와 univalent 빈도의 증가에 관한 ageing의 영향도 관찰되지 않았다. 불임개체에서 X-Y 염색체 조기 분리가 낮은 빈도로 나타나 동계교배 계통과는 다소 상반된 결과를 보였고, chiasma 빈도는 한국산 야생 생쥐가 동계교배 계통에 비해 다소 높게 나타났으며 복사기, 이동기 및 중기 1을 거치는 동안 거의 일정한 수준을 보여주었다. 또한 한국산 야생 생쥐에서 특징적으로 개재 chiasma 빈도 보다 말단 chiasma 빈도가 높게 나타났으며 이에 대해서는 부가적인 연구가 뒤따라야 할 것으로 사료된다.

• Bulletin of the Korean Chemical Society
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• 제27권3호
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• pp.373-375
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• 2006

$CF_4$ gas is one of the most common chemicals used for dry etching in semiconductor manufacturing processes. For application to the etching process and environmental control, the low-pressure inductively coupled plasma (LP-ICP) was employed to obtain the spectrum of $CF_4$ gas. In terms of the analysis of the spectra, trace CF radical by A-X and B-X transitions was detected. The other $CF_x$ radicals, such as $CF_2$ and $CF_3$, were not seen in this experiment whereas strong C and $C_2$ emissions, dissociation products of $CF_4$ gas, were observed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 춘계학술대회 논문집
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• pp.285-288
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• 1997

Generally the high dielectric films, such as PZT(Pb(Z $r^{1-x}$ $Ti_{x}$ ) $O_3$) and BST(B $a_{l-x}$S $r_{x}$ Ti $O_3$) have been formed on the Pt thin films. However it is generally known that the dry etching of Pt is difficult because of its chemical stability. So, the dry etching of Pt remains at the preliminary work. Therefore, in this study, Pt etching mechanism was investigated with Ar/C $l_2$gas plasma by using XPS(X-ray photoelectron spectroscopy) and QMS(Quadrupole mass spectrometry). Ion current density was measured with Ar/C $l_2$gas plasma by using single Langmuir probe. XPS results shoved that the atomic % of Cl element on the etched Pt sample increased with increasing Ar/(Ar+C $l_2$). And QMS results showed that the increase of Ar partial pressure in the plasma resulted in the improvement of C $l_2$dissociation and Cl redical formation and simultaniously the increase of ion bombardment effects.s.s.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.119-119
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• 1999

GaN-based 물질들은 blue와 UV 영역의 LED, LD와 같은 광소자가 상용화되었을 뿐만아니라 HBT, FET와 같은 전기소자로도 널리 응용될 시점이지만 아직까지 해결되지 않은 문제점들이 있다. 그 중에 하나가 바로 GaN의 격자상수와 일치하는 기판이 없어 발생하는 dislocation인데, 이를 해결하기 위한 방법으로 새로운 기판이나, buffer, 또는 새로운 성장방법(ELOG) 등을 시도하고 있으나 dislocation density는 아직 높은 (107~1010cm-2) 상태이다. 이에 본 연구에서는 dislocation을 줄이기 위한 방책으로 InxGa1-xN를 새로운 buffer층으로 사용하여 GaN 박막을 MBE 방법으로 성장하였다. InxGa1-xN를 선택한 이유는 GaN와의 격자상수차이가 In0.12Ga0.88N일 경우 거의 일치한다는 보고가 있으며, 특히 InGaN의 melting point는 GaN의 성장온도 보다는 약간 높기 때문에 GaN 박막을 성장할 때와 식힐 때의 InGaN 원자결합은 약하게 작용되며, 결국 이는 열적인 stress를 줄여주게 된다. 이와 같이 성장된 GaN 박막은 그 결정성을 XRD로 분석하였고, 표면과 계면을 SEM으로 관찰하였다. 그리고 그 광학적 특성을 저온 PL로서 조사하였다. 그 결과를 살펴보면 35$^{\circ}$ 근방에서 GaN(0002) peak가 나온 것으로 보아 wurtzite 구조가 성장됨을 XRD로부터 확인하였다. 그리고 저온 (12K) PL에서는 3.470eV의 D$^{\circ}$X peak뿐만 아니라 3.258eV에 해당하는 peak를 얻었는데, 이는 InxGa1-xN buffer layer의 vapour pressure가 높은 (<50$0^{\circ}C$)에 도달하게 됨으로써 dissociation이 일어나면서 초기 성장이 이루어졌고 이는 다시 계면에서의 inter-diffusion을 발생시킨 것으로 보여진다.

• 한국진공학회지
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• 제7권s1호
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• pp.20-24
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• 1998

Photploymer films are widely used in printing and electronic industries, and their usage is expanding to encompass holography, data storage and data processing, optical waveguides and compact disks, etc. One of widely used photoplymerization initiator, 20chloro-hexaarylbiimidazole (o-Cl-HABI), is studied by laser flash photolysis in dichloromethane solution in the absence and presence of the visible light photosensitizing dye, 2, 5-bis[(2, 3, 6, 7 -tetrahydro- 1H, 5H -benzo [i, j,] quinolizin -1-yl) methylene]-cyclopenta-none, (JAW). In the presence of JAW, an increase in triarylimidazolyl radicals L.formation is observed in relative to the absence of JAW. The mechanism of this photosensitizing dissociation is concluded as the dissociation of the o-Cl-HABI radical anion formed by the electron transfer from excited singlet state of JAW to o-Cl-HABI. The observed formation of L.radicals exhibits a linear dependence on o-Cl-HABI concentration. The rate constant of electron transfer obtained from this dependence is equal to (1.0$\pm$0.2) x $10^9 M^{-1}s^{-1}$. No reaction between the excited triplet state of JAW and o-Cl-HABI is found.

• Bulletin of the Korean Chemical Society
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• 제32권2호
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• pp.659-663
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• 2011

The photodissociation dynamics of bromobenzene near 234 nm has been investigated using a two-dimensional photofragment ion-imaging technique coupled with a state-selective [2+1] resonance-enhanced multiphoton ionization (REMPI) scheme. The nascent Br atoms are produced by the primary C-Br bond dissociation, which leads to the formation of $C_6H_5$ ($\tilde{X}$) and Br($^2P_j$, j = 1/2, 3/2). The observed translational energy distributions have been fitted by a single Boltzmann function and two Gaussian functions. Trimodal translational energy distributions of Br($^2P_j$) have been assigned to the direct/indirect dissociation mechanisms originating from the initially excited $^3({\pi},{\pi}^*)$ state. The assignments have been confirmed by the recoil anisotropy and distribution width corresponding to the individual components.

• 한국세라믹학회지
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• 제40권12호
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• pp.1154-1158
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• 2003

Hydrothermal deposition of hydroxyapatite coatings on $Al_2$O$_3$ substrates was studied using aqueous solutions of Ca(NO$_3$)$_2$ㆍ4$H_2O$ and (NH$_4$)$_2$HPO$_4$ containing EDTA disodium salt as a chelating agent for $Ca^{2+}$. For the precipitation of the coatings the EDTA-Ca$^{2+}$ chelates were dissociated thermally at 20$0^{\circ}C$ or decomposed by oxidation with $H_2O$$_2$ at 9$0^{\circ}C$. Scanning electron microscopy and X-ray diffraction were used to investigate the deposition behavior and the phase of the coatings. Hydroxyapatite coatings were not deposited with the thermal dissociation method, whereas uniform deposition of the coatings (about 0.7 $\mu\textrm{m}$ thickness) was obtained with the oxidative decomposition method. The coatings consisted of fine rod-like hydroxyapatite crystals (hexagonal structure) with 60-80 nm diameters, having some preferred orientation with their length (i.e., the c axis) perpendicular to the substrate.ate.

• 한국전기전자재료학회논문지
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• 제22권5호
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• pp.448-454
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• 2009

Hydrogen was produced from water plasma excited in high frequency (HF) inductively coupled tubular reactor. Mass spectrometry was used to monitor gas phase species at various process conditions, Water dissociation rate depend on the process parameters such as ICP power, $H_{2}O$ flow-rate and process pressure, Water dissociation percent in ICP reactor decrease with increase of chamber pressure, while increase with increase of ICP power and $H_{2}O$ flow rate. The effect of $CH_4$ gas addition to a water plasma on the hydrogen production has been studied in a HF ICP tubular reactor. The main roles of $CH_4$ additive gas in $H_{2}O$ plasma are to react with 0 radical for forming $CO_x$ and CHO and resulting additional $H_2$ production. Furthermore, $CH_4$ additives in $H_{2}O$ plasma is to suppress reverse-reaction by scavenging 0 radical. But, process optimization is needed because $CH_4$ addition has some negative effects such as cost increase and $CO_x$ emission.