• 한국재료학회지
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• 제28권4호
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• pp.195-200
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• 2018

This study investigated the effects of the post annealing temperatures on the electrical and interfacial properties of a metal-semiconductor-metal photodetector(MSM-PD) device. The interdigitate type MSM-PD devices had the structure Al(500 nm) / Ti(200 nm) / poly-Si(500 nm). Structural analyses of the MSM-PD devices were performed by employing X-ray diffraction(XRD), scanning electron microscopy(SEM) and transmission electron microscope(TEM). Electrical characteristics of the MSM-PD were also examined using current-voltage(I-V) measurements. The optimal post annealing condition for the Schottky contact of MSM-PD devices are $350^{\circ}C$-30minutes. However, as the annealing temperature and time are increased, electrical characteristics of MSM-PD device are degraded. Especially, for the annealing conditions of $400^{\circ}C$-180minutes and $500^{\circ}C$-30minutes, the I-V measurement itself was impossible. These results are closely related to the solid phase reactions at the interface of MSM-PD device, which result in the formation of intermetallic compounds such as $Al_3Ti$ and $Ti_7Al_5Si_{12}$.

• 한국근적외분광분석학회:학술대회논문집
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• 한국근적외분광분석학회 2001년도 NIR-2001
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• pp.1171-1171
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• 2001

Quantitative analysis is an important requirement in exploration, mining and processing of minerals. There is an increasing need for the use of quantitative mineralogical data to assist with bore hole logging, deposit delineation, grade control, feed to processing plants and monitoring of solid process residues. Quantitative analysis using X-Ray Powder Diffraction (XRD) requires fine grinding and the addition of a reference material, or the application of Rietveld analysis to XRD patterns to provide accurate analysis of the suite of minerals present. Whilst accurate quantitative data can be obtained in this manner, the method is time consuming and limited to the laboratory. Mid infrared when combined with multivariant analysis has also been used for quantitative analysis. However, factors such as the absorption coefficients and refractive index of the minerals requires special sample preparation and dilution in a dispersive medium, such as KBr to minimize distortion of spectral features. In contrast, the lower intensity of the overtones and combinations of the fundamental vibrations in the near infrared allow direct measurement of virtually any solid without special sample preparation or dilution. Thus Near Infrared Spectroscopy (NIR) has found application for quantitative on-line/in line analysis and control in a range of processing applications which include, moisture control in clay and textile processing, fermentation processes, wheat analysis, gasoline analysis and chemicals and polymers. It is developing rapidly in the mineral exploration industry and has been underpinned by the development of portable NIR spectrometers and spectral libraries of a wide range of minerals. For example, iron ores have been identified and characterized in terms of the individual mineral components using field spectrometers. Data acquisition time of NIR field instruments is of the order of seconds and sample preparation is minimal. Consequently these types of spectrometers have great potential for in-line or on-line application in the minerals industry. To demonstrate the applicability of NIR field spectroscopy for quantitative analysis of minerals, a specific example on the quantification of lateritic bauxites will be presented. It has been shown that the application of Partial Least Squares regression analysis (PLS) to the NIR spectra can be used to quantify chemistry and mineralogy in a range of lateritic bauxites. Important, issues such as sampling, precision, repeatability, and replication which influence the results will be discussed.

• 대한화장품학회지
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• 제23권2호
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• pp.48-62
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• 1997

천연 고분자인 키토산의 1차 아민기를 아질산나트륨염에 의해 환원 말단에 알데히드기를 갖는 키토산 올리고사카라이드를 얻었으며, 이를 수소화붕소산나트륨으로 환원하여 수산기로 전환하였다. 얻어진 키토산 올리고사카라이드의 평균 중합도는 겔투과 크로마토그라피를 통해 약 2로 나타났으며, 키토산에 비해 친수성 용매에 대한 용해성이 매우 높게 나타났다. 보습효과를 글리세린과 비교 측정한 결과 키토산 올리고사카라이드는 어느 정도 수분을 보유할 수 있는 능력은 있으나 글리세린에 비하여 약한 것으로 나타났다. 피부의 섬유아세포 증식 실험결과1$\times$10-3 ~ 1$\times$10-4%농도에서 115 ~ 125%의 세포증식 효과를 보였다. 키토산 올리고사카라이드에 아실클로라이드를 반응시켜 얻은 N, N-디아실, O-아실 키토산 올리고사카라이드는 액정을 형성하였으며, 높은 결정성을 보였다. 또한 유동파라핀, 에스테르형 오일 성분 등에 대한 용해성이 우수하여 화장품용 유성성분으로서의 가능성을 나타내었다.

• 한국자기학회지
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• 제17권2호
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• pp.71-75
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• 2007

계면활성제를 첨가한 음향화학적 침전법으로 두 가지 크기의 아연페라이트 나노입자를 합성하였다. 열분석장치(TGA/DSC)를 이용하여 열적 특성 및 결정화 온도를 조사하였고, 결정구조 확인을 위하여 X선 회절실험을 실시하였다. 제조된 입자는 $240^{\circ}C$ 부근에서 결정생성이 시작되었으며, 결정구조는 전형적인 스피넬 구조를 나타내었다. Scherrer식에 의해 측정된 입자의 크기는 11.2nm와 13.4nm이었다. SQUID를 통하여 자기적 성질을 분석한 결과, 작은 크기의 입자에 대한 방해온도 $T_B$(Blocking temperature)가 큰 입자의 경우보다 더 높게 나타났다.

• 대한치과기공학회지
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• 제23권2호
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• pp.179-188
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• 2002

With regard to the manufacture of dental prosthesis, all the dental mechanism is of vital significance at the aspect of activating its function by fixing the prosthesis to Patient's oral cavity. However, if there we will take our immediate action without the discretion about its process none the less for the importance of dental mechanism, then we might have a serious problem. Accordingly, there need to pay attention to the dilatability makes up for the shrinkage state occurring by the feature of metal materials and manufacturing process which appeared in the process of dental mechanism, which eventually is expected to playa very important role in casting a dental prosthesis appropriate to one's oral tissue. This study was designed to take into account of the effects on margin consistency of prosthesis according to the continued time of casting-ring in the course of the casting of dental alloy. For this, the researcher made an experiment on the casting of dental alloy, its dilatability, and the change of phase. The results of this study were as follows: First, the researcher could see that the sample which was cast under the condition of $650^{\circ}C/20$ Minutes(the continued time) was far superior to others at the aspect of margin consistency. Second, according to the measurement of expansion coefficient by Dilatometer, the researcher perceived the fact that the expansion-coefficient showed a maximum of $37.1{\mu}m$ considering the sample's length which was cast with ordinary temperature under the condition of $650^{\circ}C/20$ Minutes. Third, from the result of X-ray diffraction under the condition of $650^{\circ}C/20$ Minutes(the continued time), the researcher could find that there's no difference between the change of phase and its intensity. As mentioned above, the researcher could ascertain the fact that its contraction don't give rise to the change of phase.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.257-265
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• 2002

A stoichiometric mixture of evaporating materials for AgInS$_2$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, AgInS$_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy(HWE) system. The source and substrate temperatures were 680 $^{\circ}C$ and 410 $^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of AgInS$_2$ single crystal thin films measured from Hall effect by van der Pauw method are 9.35${\times}$10$\^$16/ cm$\^$-3/ and 294 $\textrm{cm}^2$/V$.$s at 293 K, respectively. From the optical absorption measurement, the temperature dependence of the energy band gap on AgInS$_2$ single crystal thin films was found to be E$\_$g/(T) : 2.1365 eV - (9.89 ${\times}$ 10$\^$-3/ eV) T$^2$/(2930 + T). After the as-grown AgInS$_2$ single crystal thin films was annealed in Ag-, S-, and In-atmospheres, the origin of point defects of AgInS$_2$ single crystal thin films has been investigated by using the photoluminescence(PL) at 10 K. The native defects of V$\_$AG/, V$\_$S/, Ag$\_$int/, and S$\_$int/ obtained from PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the S-atmosphere converted AgInS$_2$ single crystal thin films to an optical p-type. Also, we confirmed that In in AgInS$_2$/GaAs did not form the native defects because In in AgInS$_2$ single crystal thin films did exist in the form of stable bonds.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.942-945
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• 2003

Nerve gas sensor based on tin oxide was fabricated and its characteristics were examined. Target gas was dimethylmethylphosphonate($C_3H_9O_3P$, DMMP) that is simulant gas of nerve gas. Sensing material was $SnO_2$ added ${\alpha}-Al_2O_3$ with $4{\sim}20wt.%$ and was physically mixed. And then it was deposited by screen printing method on alumina substrate. Sensor device was consisted of sensing electrode with interdigit(IDT) type in front and heater in back side. Total size of device was $7{\times}10{\times}0.6mm^3$. Crystallite size of fabricated $SnO_2$ were characterized by X-ray diffraction(XRD, Rigaku) and morphology of the $SnO_2$ powders was observed by a scanning electron microscope(SEM, Hitachi). Fabricated sensor was measured as flow type and sensor resistance change was monitored real time using LabVIEW program. The best conditions as added $Al_2O_3$ amounts and operating temperature changes were 4wt.% and $300^{\circ}C$ in DMMP 0.5ppm, respectively. The sensitivity was over 75%. Response and recovery times were about 1 and 3 min., respectively. Repetition measurement was very good with ${\pm}3%$ in full scale.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 D
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• pp.1352-1354
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• 1998

$LiNbO_3$ transistor showed relatively stable characteristic, low interface trap density, and large remanent polarization. This paper reports ferroelectric $LiNbO_3$ thin films grown directly on p-type Si(100) substrates by 13.56 MHz rf magnetron sputtering system for FRAM applications. To take advantage of low temperature requirement for growing films, we deposited $LiNbO_3$ films lower than $300 ^{\circ}C$. RTA(Rapid Thermal Anneal) treatment was performed for as-deposited films in an oxygen atmosphere at $600^{\circ}C$ for 60 sec. We learned from X-ray diffraction that the RTA annealed films were changed from amorphous to poly-crystalline $LiNbO_3$ which exhibited (012), (015), and (022) orientations. The I-V characteristics of $LiNbO_3$ films before and after anneal treatment showed that RTA improved the leakage current of films. The leakage current density of films decreased from $10^{-5}$ to $10^{-7} A/cm^2$ at room temperature measurement. Breakdown electric field of the films exhibited higher than 500 kV/cm. The C-V curves showed the clockwise hysteresis represents ferroelectric switching characteristics. From C-V curves, we calculated dielectric constant of thin film $LiNbO_3$ as 27.5 which is close to that of bulk value.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.313-313
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• 2010

$BiFeO_3$ (BFO), when forming a solid solution with $BaTiO_3$ (BTO), shows structural transformations over the entire compositional range, which not only gives a way to increase structural stability and electrical resistivity but also applies a means to have better ferromagnetic ordering. In this respect, we have prepared and studied 0.8 BFO-0.2 BTO thin films on Pt(111)/$TiO_2/SiO_2$/Si substrates by pulsed laser deposition. Various deposition parameters, such as deposition temperature and oxygen pressure, have been optimized to get better quality films. Based on the X-ray diffraction results, thin films were successfully deposited at the temperature of $700^{\circ}C$ and an oxygen partial pressure of 10mTorr and 330mTorr. The dielectric, ferroelectric, and magnetic properties have then been characterized. It was found that the films deposited under lower and higher oxygen pressure corresponded to lower leakage current. Magnetism measurement showed an induced ferromagnetism. The microstructures associated with the magnetic and dielectric properties of this mixed-perovskite solid solutions were observed by transmission electron microscopy, which revealed the existence of complicated ferroelectric domains, suggested that the weak spontaneous magnetization was closely associated with the decrease in the extent of rhombohedral distortion by a partial substitution of $BaTiO_3$ for $BiFeO_3$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.388-388
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• 2010

In this study, Ferroelectric vinylidene fluoride-trifluoroethylene (VF2-TrFE) copolymer films were directly deposited on degenerated Si (n+, $0.002\;{\Omega}{\cdot}cm$) using by spin coating method. A 1~5 wt% diluted solution of purified vinylidene fluoride-trifluoroethylene (VF2:TrFE = 70:30) in a dimethylformamide (DMF) solvent were prepared and deposited on silicon wafers at a spin rate of 2000 ~ 4000 rpm for 2 ~ 30 seconds. After annealing in a vacuum ambient at 100 ~ $200^{\circ}C$ for 60 min, upper aluminum electrodes were deposited by vacuum evaporation for electrical measurement. X-ray diffraction results showed that the VF2-TrFE films on Si substrates had $\beta$-phase of copolymer structures. The capacitance on highly doped Si wafer showed hysteresis behavior like a butterfly shape and this result indicates clearly that the copolymer films have ferroelectric properties. The typical measured remnant polarization ($P_r$) and coercive filed ($E_c$) values were about $5.7\;{\mu}C/cm^2$ and 710 kV/em, respectively, in an applied electric field of ${\pm}$ 1.5 MV/em. The gate leakage current densities measured at room temperature was less than $7{\times}10^{-7}\; A/cm^2$ under a field of 1 MV/cm.