• Title/Summary/Keyword: X-Ray diffraction measurement

Search Result 519, Processing Time 0.031 seconds

The Electrochemical Performance of Li3V2(PO4)3/Graphene Nano-powder Composites as Cathode Material for Li-ion Batteries

  • Choi, Mansoo;Kim, Hyun-Soo;Lee, Young Moo;Jin, Bong-Soo
    • Journal of Electrochemical Science and Technology
    • /
    • v.5 no.4
    • /
    • pp.109-114
    • /
    • 2014
  • The $Li_3V_2(PO_4)_3$/graphene nano-particles composite was successfully synthesized by a facile sol-gel method. The addition of a graphene in $Li_3V_2(PO_4)_3(LVP)$(LVP) showed the high crystallinity and influenced the morphology of the $Li_3V_2(PO_4)_3$ particles observed in X-ray diffraction (XRD) and scanning electron microscopy (SEM). The LVP/graphene samples were well connected, resulting in fast charge transfer. The effect of the addition graphene nano-particles on electrochemical performance of the materials was investigated. Compared with the pristine LVP, the LVP/graphene composite delivered a higher discharge capacity of $122mAh\;g^{-1}$ at 0.1 C-rate, better rate capability and cyclability in the potential range of 3.0-4.3 V. The electrochemical impedance spectra (EIS) measurement showed the improved electronic conductivity for the LVP/graphene composite, which can ensure the high specific capacity and rate capability.

Properties of GST Thin Films for PRAM with Composition (PRAM 용 GST계 상변화 박막의 조성에 따른 특성)

  • Jang Nak-Won
    • Journal of Advanced Marine Engineering and Technology
    • /
    • v.29 no.6
    • /
    • pp.707-712
    • /
    • 2005
  • PRAM (Phase change random access memory) is one of the most promising candidates for next generation Non-volatile Memories. The Phase change materials have been researched in the field of optical data storage media. Among the phase change materials. $Ge_2Sb_2Te_5$ is very well known for its high optical contrast in the state of amorphous and crystalline. However the characteristics required in solid state memory are quite different from optical ones. In this study. the structural Properties of GeSbTe thin films with composition were investigated for PRAM. The 100-nm thick $Ge_2Sb_2Te_5$ and $Sb_2Te_3$ films were deposited on $SiO_2/Si$ substrates by RF sputtering system. In order to characterize the crystal structure and morphology of these films. x-ray diffraction (XRD). atomic force microscopy (AFM), differential scanning calorimetry (DSC) and 4-point measurement analysis were performed. XRD and DSC analysis result of GST thin films indicated that the crystallization of $Se_2Sb_2Te_5$ films start at about $180^{\circ}C$ and $Sb_2Te_3$ films Start at about $125^{\circ}C$.

Thickness-dependent Electrical, Structural, and Optical Properties of ALD-grown ZnO Films

  • Choi, Yong-June;Kang, Kyung-Mun;Park, Hyung-Ho
    • Journal of the Microelectronics and Packaging Society
    • /
    • v.21 no.2
    • /
    • pp.31-35
    • /
    • 2014
  • The thickness dependent electrical, structural, and optical properties of ZnO films grown by atomic layer deposition (ALD) at various growth temperatures were investigated. In order to deposit ZnO films, diethylzinc and deionized water were used as metal precursor and reactant, respectively. ALD process window was found at the growth temperature range from $150^{\circ}C$ to $250^{\circ}C$ with a growth rate of about $1.7{\AA}/cycle$. The electrical properties were studied by using van der Pauw method with Hall effect measurement. The structural and optical properties of ZnO films were analyzed by using X-ray diffraction, field emission scanning electron microscopy, and UV-visible spectrometry as a function of thickness values of ZnO films, which were selected by the lowest electrical resistivity. Finally, the figure of merit of ZnO films could be estimated as a function of the film thickness. As a result, this investigation of thickness dependent electrical, structural, and optical properties of ZnO films can provide proper information when applying to optoelectronic devices, such as organic light-emitting diodes and solar cells.

Preparation and Photoluminescent Properties of Ca2PO4Cl Activated by Divalent Europium

  • Park, In Yong
    • Journal of the Microelectronics and Packaging Society
    • /
    • v.23 no.4
    • /
    • pp.63-67
    • /
    • 2016
  • Divalent europium-activated $Ca_2PO_4Cl$ phosphor powders were prepared by a chemical synthetic method followed by heat treatment in reduced atmosphere, and the crystal structures, morphologies and photoluminescence properties of the powders were investigated by x-ray powder diffraction, scanning electron microscope and spectrometer. The effect of Ca/P mole ratio at the starting materials on the final products was evaluated. The optimized synthesis condition obtained in this study was Ca/P mole ratio of 2.0. The present phosphor materials had higher photoluminescence intensity and better color purity than the commercial blue phosphor powders, $(Ca,Ba,Sr)_{10}(PO_4)_6Cl_2:Eu^{2+}$. The result of excitation spectrum measurement indicated that the excitation efficiency of the synthesized powders was higher for the long-wavelength UV region than that of the commercial phosphor. It was thus concluded that the samples prepared in this study can be successfully applied for the light-emitting devices such as LED excited with long-wavelength UV light sources.

Electrical and Chemical Stability of Mo Gate Electrode for PMOS (PMOS에 적합한 Mo 전극의 전기적 화학적 안정성)

  • 노영진;이충근;홍신남
    • Journal of the Institute of Electronics Engineers of Korea SD
    • /
    • v.41 no.4
    • /
    • pp.23-28
    • /
    • 2004
  • In this paper, the properties of Mo as PMOS gate electrodes were studied. The work-function of Mo extracted from C-V characteristic curves was appropriate for PMOS. To identify the electrical and chemical stability of Mo metal gate, the changes of work-function and EOT(Effective Oxide Thickness) values were investigated after 600, 700, 800 and 90$0^{\circ}C$ RTA(Rapid Thermal Annealing). Also it was found that Mo metal gate was stable up to 90$0^{\circ}C$ with underlying SiO$_2$through X-ray diffraction measurement. Sheet resistances of Mo metal gate obtained from 4-point probe were less than 10$\Omega$/$\square$ that was much lower than those of polysilicon.

Phase Transformation and Reversible Shape Memory Effect of Ti-Ni-Cu Alloys (Ti-Ni-Cu 합금의 상변태 및 가역형상기억효과)

  • Hong, S.W.;Lee, O.Y.;Kim, D.K.
    • Journal of the Korean Society for Heat Treatment
    • /
    • v.5 no.3
    • /
    • pp.149-156
    • /
    • 1992
  • Transformation behavior and reversible shape memory effct of Ti-Ni-Cu alloys with various Cu content has been investigated by means of electrical resistivity measurement, differential scanning calorimetry. X-ray diffraction and strain gage sensor. The transformation sequence in Ti-Ni-Cu alloys substituted by Cu for Ni up to 5at.% occurs to $B2{\leftrightarrow}B19^{\prime}$ and it proceeds in two stages by addition of 10 at.%Cu. i.e. $B2{\leftrightarrow}B19{\leftrightarrow}B19^{\prime}$. But the content of Cu increases up to 20at.%, it has been transformed in one stage ; $B2{\leftrightarrow}B19$. The shape change of Ti-40Ni-10Cu alloy which was constrain aged in circular form bended in $B2{\leftrightarrow}B19$ transformation but it spreaded out in $B19{\leftrightarrow}B19^{\prime}$ transformation. The amount of reversible shape change (${\Delta}{\varepsilon}$) of Ti-47Ni-3Cu alloy constrain aged at $400^{\circ}C$ after solution treatment has a maximum value of about $5.6{\times}10^{-3}$, but that of cold rolled and constrain aged specimens exhibits a little value independent of Cu concentrations.

  • PDF

Synthesis of high quality infinite-layer superconducting compound of Sr$_{0.9}$Sm$_{0.1}$CuO$2$ and its pinning properties

  • Park, Min-Seok;Kim, J.Y.;Kim, Mun-Seog;Kim, Heon-Jung;Lee, Sung-Ik;Jung, C.U.
    • 한국초전도학회:학술대회논문집
    • /
    • v.10
    • /
    • pp.125-127
    • /
    • 2000
  • We report high pressure synthesis of Sr$_{0.9}$Sm$_{0.1}$CuO$_2$. Powder x-ray diffraction showed that the synthesized compounds have infinite layer structure as a major component. Slow heating at the first stage of heating processes after pressurization resulted in several larger grains. The largest grain was found to have the longest edge length of about 100 micrometer. Through magnetic property measurement in superconducting state, we found that pinning in this compound has substantial difference from that of La doped infinite layer, which has no unpaired spin at Sr site.

  • PDF

Stabilization, Carbonization, and Characterization of PAN Precursor Webs Processed by Electrospinning Technique

  • Cho, Chae-Wook;Cho, Dong-Hwan;Ko, Young-Gwang;Kwon, Oh-Hyeong;Kang, Inn-Kyu
    • Carbon letters
    • /
    • v.8 no.4
    • /
    • pp.313-320
    • /
    • 2007
  • In the present study, electrospun PAN precursor webs and the stabilized and carbonized nanofiber webs processed under different heat-treatment conditions were characterized by means of weight loss measurement, elemental analysis, scanning electron microscopy (SEM), attenuated total reflection-Fourier transform infrared spectroscopy (ATR-FTIR), differential scanning calorimetry (DSC), thermogravimentric analysis (TGA), and X-ray diffraction (XRD) analysis. The result indicated that stabilization and carbonization processes with different temperatures and heating rates significantly influenced the chemical and morphological characteristics as well as the thermal properties of the stabilized and then subsequently carbonized nanofiber webs from PAN precursor webs. It was noted that the filament diameter and the carbon content of a carbonized nanofiber web as well as its weight change may be effectively monitored by controlling both stabilization and carbonization processes.

Correlation between optical properties and microstructure of undoped Zno thin films grown by PLD (PLD 법으로 성장한 undoped ZnO 박막의 광학적 특성과 미세구조 상관관계)

  • Lee, Deuk-Hee;Leem, Jae-Hyeon;Song, Yong-Won;Lee, Sang-Yeol
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2009.04b
    • /
    • pp.101-102
    • /
    • 2009
  • We described the growth of undoped ZnO thin films and their optical properties changing with a various growth temperature. The un doped ZnO thin films were grown on c-$Al_2O_3$ substrates using pulsed laser deposition (PLD) at room temperature, 200, 400, and $600^{\circ}C$, respectively. Field emission microscopy (FE-SEM) measurements showed that the grain size of undoped ZnO thin films are increasing as a increase of growth temperature. In addition, we were investigated that the structural and optical properties of undoped ZnO thin films by x-ray diffraction (XRD) and photoluminescence (PL) studied. Also, we could confirmed that the exciton luminescence was strongly related to charge trap by grain boundary of the samples using micro-PL measurement.

  • PDF

In-situ Growth of Epitaxial PbVO3 Thin Films under Reduction Atmosphere

  • Oh, Seol Hee;Jin, Hye-Jin;Shin, Hye-Young;Shin, Ran Hee;Yoon, Seokhyun;Jo, William;Seo, Yu-Seong;Ahn, Jai-Seok
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2014.02a
    • /
    • pp.361.1-361.1
    • /
    • 2014
  • PbVO3 (PVO), a polar magnetic material considered as a candidate of multiferroic, has ferroelectricity along the c-axis and 2-dimensional antiferromagnetism lying in the in-plane through epitaxial growth [1,2]. PVO thin films were grown on LaAlO3 (001) substrates under reduction atmosphere from a stable Pb2V2O7 sintered target using pulsed laser deposition method. Epitaxial growth of the PVO films is possible only under Ar atmospheren with no oxygen partial pressure. X-ray diffraction was used to investigate the phase formation and texture of the films. We confirmed epitaxial growth of the PVO films with crystalline relationship of PbVO3[001]//LaAlO3[001] and PbVO3[100]//LaAlO3[100]. In addition, surface morphology of the films displays drastic changes in accordance with the growth conditions. Elongated PVO grains are related to the Pb2V2O7 pyrochlore structure. The relation between structural deformation and ferroelectricity in the PVO films was examined by local measurement of piezoresponse force microscopy.

  • PDF