• Polymer(Korea)
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• v.37 no.4
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• pp.449-454
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• 2013

In this work, the effect of electroless Ni-plating of multi-walled carbon nanotubes (MWCNTs) on thermal conductivity and fracture toughness properties of MWCNTs/$Al_2O_3$/epoxy composites was investigated. The surface properties of the Ni-plated MWCNTs were determined by scanning electron microscopy (SEM), X-ray photoelectron spectrometry (XPS), and X-ray diffraction (XRD) analyses. Thermal conductivity was tested using a thermal conductivity measuring system. The fracture toughness of the composites was carried out through the critical stress intensity factor ($K_{IC}$) measurement. As a result, the electroless Ni-plated MWCNTs led to a significant change of surface characteristics of the MWCNTs. Thermal conductivity and fracture toughness of the MWCNTs/$Al_2O_3$/epoxy composites were greater than those of non-treated ones. These results were probably due to the improvement of intermolecular interaction between the Ni-MWCNTs and the matrix resins.

• Proceedings of the IEEK Conference
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• 2004.06b
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• pp.501-504
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• 2004

High quality GaN layer was obtained on 0001 sapphire substrate using ammonia($NH_3$) as a nitrogen source by gas source molecular beam epitaxy. As a result, RHEED is used to investigate the relaxation processes which take place during the growth of GaN. In-situ RHEED(reflection high electron energy diffraction) appeared streaky-like pattern. The full Width at half maximum of the x-ray diffraction(FWHM) rocking curve measured from plane of GaN has exhibited as narrow as 8arcmin and surface roughness was 7.83nm. Photoluminescence measurement of GaN was investigated at room temperature, where the intensity of the band edge emission is much stronger than that of deep level emission. The GaN epitaxy layer according to various growth condition was investigated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.533-536
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• 2001

Single crystal cubic silicon carbide(3C-SiC) thin film were deposited on Si(100) substrate up to a thickness of $4.3{\mu}m$ by APCVD(atmospheric pressure chemical vapor deposition) method using hexamethyildisilane(HMDS) at $1350^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like. The growth rate of the 3C-SiC films was $4.3{\mu}m/hr$. The 3C-SiC epitaxical layers on Si(100) were characterized by XRD(X-ray diffraction), raman scattering and RHEED(reflection high-energy electron diffraction), respectively. The 3C-SiC distinct phonons of TO(transverse optical) near $796cm^{-1}$ and LO(longitudinal optical) near $974{\pm}1cm^{-1}$ were recorded by raman scattering measurement. The deposition films were identified as the single crystal 3C-SiC phase by XRD spectra($2{\theta}=41.5^{\circ}$). Also, with increase of films thickness, RHEED patterns gradually changed from a spot pattern to a streak pattern.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.533-536
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• 2001

Single crystal cubic silicon carbide(3C-SiC) thin film were deposited on Si(100) substrate up to a thickness of 4.3 $\mu\textrm{m}$ by APCVD(atmospheric pressure chemical vapor deposition) method using hexamethyildisilane(HMDS) at 1350$^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like. The growth rate of the 3C-SiC films was 4.3 $\mu\textrm{m}$/hr. The 3C-SiC epitaxical layers on Si(100) were characterized by XRD(X-ray diffraction), raman scattering and RHEED(reflection high-energy electron diffraction), respectively The 3C-SiC distinct phonons of TO(transverse optical) near 796 cm$\^$-1/ and LO(longitudinal optical) near 974${\pm}$1 cm$\^$-1/ were recorded by raman scattering measurement. The deposition films were identified as the single crystal 3C-SiC phase by XRD spectra(2$\theta$=41.5$^{\circ}$). Also, with increase of films thickness, RHEED patterns gradually changed from a spot pattern to a streak pattern

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.05a
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• pp.46-49
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• 1992

Cadmium sulfide thin films were deposited on glass substrate by Chemical Mist Deposition from solutions containing equimolar (0.1M) cadmium chloride and thiourea [(NH$_2$)$_2$CS] at a mist velocity of 1.6m/sec. Substrate temperatures were ranged between 200$^{\circ}C$ and 400$^{\circ}C$. The microstructure and semiconducting property of the films were investigated using SEM, X-ray diffraction, UV transmittance measurement and four point probe method. All the films have hexagonal structure and diffraction patterns indicate that the intensity of (112) and (101) reflections increase with increasing substrate temperature, whereas (002) reflection substrate temperature, whereas(002) reflection decrease for substrate temperatures between 250$^{\circ}C$ and 350$^{\circ}C$. The films prepared at lower temperature have a significant number of pinholes due probably to entrapped gaseous reaction. Optical transmittance of the films deposited at 350$^{\circ}C$ was about 75%. Optical bandgap of the films were 2.43eV regardless of substrate temperature. The dark resistivity of the films decreased with increasing substrate temperature up to 300$^{\circ}C$ and increased with further increasing substrate temperature. The films were photosensitive and had dark-to-light resistivity ratios of about 10 at room temperature for a white-light photoexcitation intensity of 50mw/$\textrm{cm}^2$.

• Journal of Sericultural and Entomological Science
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• v.34 no.2
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• pp.41-51
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• 1992

In this thesis, both soap and enzymatic degumming method were adopted and the optimum degumming conditions were obtained. Difference between the two degumming methods in silk fiber state was investigated and analyzed on the basis of the results of physical testings, polarizing microscopy, scanning electron microscopy, viscosity measurement, (${\alpha}$＋$\varepsilon$) amino group contents measurement, birefringence measurement, amino acid analysis, thermal analysis, infrared spectroscopy and x-ray diffraction analysis. The results obtained were summarized as follows; Physical test results of the degummed silk fiber showed that the tenacity and the elongation of enzymatic degummed silk fiber were lower than those of soap degummed fiber. But SEM observation and amino acid analysis showed almost the same tendency in the two degumming methods. The viscosity of enzymatic degummed silk fiber was lower than that of soap degummed fiber, but (${\alpha}$＋$\varepsilon$) amino group contents was higher in the enzymatic degummed fiber. It can be suggested that the enzymatic degummed silk fibroin was more degraded than the soap degummed fibroin. The birefringence, endothermic temperature of DSC spectrum, IR crystallinity and X-ray lateral order factor of enzymatic degummed silk fiber were higher than those of soap degummed fiber. It seems that the enzymatic degummed silk fiber has the higher crystallinity than that of soap degummed one according to the above results. However, it can be inferred that these differences between soap and enzymatic degummed fiber would be lessened if pretreatment and aftertreatment were included in the enzymatic degumming process.

• Transactions on Electrical and Electronic Materials
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• v.16 no.2
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• pp.95-98
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• 2015

Organic polymer dielectric thin films of styrene and vinyl acetate were prepared by the plasma polymerization deposition technique and applied for the fabrication of an organic thin film transistor device. The structural properties of the plasma polymerized thin films were characterized by Fourier-transform infrared spectroscopy, X-ray diffraction, atomic force microscopy, and contact angle measurement. Investigation of the electrical properties of the plasma polymerized thin films was carried out by capacitance-voltage and current-voltage measurements. The organic thin film transistor device with gate dielectric of the plasma polymerized thin film revealed a low operation voltage of −10V and a low threshold voltage of −3V. It was confirmed that plasma polymerized thin films of styrene and vinyl acetate could be applied to functional organic thin film transistor devices as the gate dielectric.

• Corrosion Science and Technology
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• v.4 no.2
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• pp.64-68
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• 2005

Various metallic materials are coated on Fe base materials via thermal spraying or welding process to improve both corrosion resistance as well as erosion resistance of the Fe base materials used in buildings and special works. The mechanical properties and corrosion resistance of the coat are estimated by means of hardness measurement and anodic polarization test. In additions, the effect of alloying elements and microstructure of the coatings on the mechanical and chemical properties of the coat is investigated using X- ray diffraction, Optical microscope, Transmission electron microscopy and Auger analysis. The coating deposited by tungsten inert gas (TIG) welding exhibit a good combination of hardness and corrosion properties.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.106-106
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• 2009

Al-doped ZnO (AZO) thin films were grown on glass substrates by co-sputtering at room temperature. We made ZnO and Al target and ZnO:Al film is deposited with sputter which has two RF gun source. The Al content was controlled by varying Al RF power and effect of Al contents on the properties of ZnO:Al film was investigated. Crystallinity and orientation of the ZnO:Al films were investigated by X-ray diffraction (XRD), surface morphology of the ZnO:Al films was observed by atomic force microscope. Electrical properties of the ZnO:Al films were measured at room temperature by van der Pauw method and hall measurement. Optrical properties of ZnO:Al films were measured by UV-vis-NIR spectrometer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.224-225
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• 2009

Aluminium nitride thin film was deposited on Au electrode and Si substrate by radio frequency sputtering system. X-ray diffraction (XRD) was utilized to identify the AlN phase, and Atomic Force Microscope (AFM) was used to obtain the images of surface morphology and roughness value of AlN thin film. The result of XRD and AFM measurement showed that the AlN thin film has strong c-axs orientation and smooth surface. In order to investigate piezoelectric response and polarization properties along to the direction of electric field, PFM (Piezoresponse Force Microscope) system was used, and the images of piezoelectric response due to switching of polarization was observed by PFM.