• Title/Summary/Keyword: X-Plane

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Development of ROS-based Flight and Mission State Communication Node for X-Plane 11-based Flight Simulation Environment

  • Cho, Sungwook
    • Journal of Aerospace System Engineering
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    • v.15 no.4
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    • pp.75-84
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    • 2021
  • A novel robot-operating-system-based flight and mission state communication node for X-Plane 11 flight control simulation environments and its simulation results were discussed. Although the proposed communication method requires considerable implementation steps compared with the conventional MATLAB/Simulink-based User Datagram Protocol (UDP) block utilization method, the proposed method enables a direct comparison of cockpit-view images captured during flight with the flight data. This comparison is useful for data acquisition under virtual environments and for the development of flight control systems. The fixed/rotary-wing and ground terrain elements simulated in virtual environments exhibited excellent visualization outputs, which can overcome time and space constraints on flight experiments and validation of missionary algorithms with complex logic.

Effect of Knit Structure on the Drapability of Weft Knitted Fabrics (편성조직의 위편성물의 드레이프성에 미치는 영향)

  • Suh, Jung-Kwon
    • Journal of the Korea Fashion and Costume Design Association
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    • v.14 no.1
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    • pp.111-121
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    • 2012
  • This study focused on the plane and side drape coefficients of weft knitted fabrics as a function of knit structure, stitch density, and stiffness. Fifteen weft knitted fabrics are produced with five different structures (interlock, single pique, royal interlock, cross miss interlock, and mock royal interlock) and three different gauges (7G, 10G, and 12G). Five knit structures were the application of knit, tuck, and miss stitch on the basis of interlock of the double knit fabric For this purpose, three-dimensional shapes of the draped sample were obtained by using a drapability tester which can record the contour line coordinates of a projected plane drape. Then, projected shapes of the plane and side drape were derived from those three-dimensional ones to review the relationship between plane drape coefficients and side ones. It was found that the theoretical values of plane and side drape coefficients depending on the change of deflection angles fit to their experimental ones. A5 a result of a regression analysis of the relationship between plane and side drape coefficients, the relationship could be expressed as $y=0.5838x-0.0065x^2+9.03{\times}10^{-5}x^3$. In case of mean of drape coefficient, it was increased according to the rule of that the more tuck and miss stitch overlap. A high degree of correlation was found between stiffness and drape coefficient. The regression equation of drape coefficient($y$) can be represented by $y=y=\sqrt[3]{Stiffness}-10.72$.

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Cancellation of MRI Motion Artifact in Image Plane (촬상단면내의 MRI 체동 아티팩트의 제거)

  • 김응규;권영도
    • Proceedings of the IEEK Conference
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    • 1999.06a
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    • pp.631-634
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    • 1999
  • In this work, a new algorithm for canceling MRI artifact in the image plane is presented. In the conventional approach, the motions in the X(readout) direction and Y(the phase encoding) direction are estimated simultaneously. However, the feature of each X and Y directional motion is different. First, we notice that the X directional motion corresponds to a shift of the X directional spectrum of the MRI signal, and the non zero area of the spectrum just corresponds to X axis projected area of the density function. So the motion is estimated by tracing the edges of the spectrum, and the X directional motion is canceled by shifting the spectrum in inverse direction. Next, the Y directional motion is canceled using a new constraint, with which the motion component and the true image component can be separated. This algorithm is shown to be effective by simulations.

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Heat Treatment of Carbonized Photoresist Mask with Ammonia for Epitaxial Lateral Overgrowth of a-plane GaN on R-plane Sapphire

  • Kim, Dae-sik;Kwon, Jun-hyuck;Jhin, Junggeun;Byun, Dongjin
    • Korean Journal of Materials Research
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    • v.28 no.4
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    • pp.208-213
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    • 2018
  • Epitaxial ($11{\bar{2}}0$) a-plane GaN films were grown on a ($1{\bar{1}}02$) R-plane sapphire substrate with photoresist (PR) masks using metal organic chemical vapor deposition (MOCVD). The PR mask with striped patterns was prepared using an ex-situ lithography process, whereas carbonization and heat treatment of the PR mask were carried out using an in-situ MOCVD. The heat treatment of the PR mask was continuously conducted in ambient $H_2/NH_3$ mixture gas at $1140^{\circ}C$ after carbonization by the pyrolysis in ambient $H_2$ at $1100^{\circ}C$. As the time of the heat treatment progressed, the striped patterns of the carbonized PR mask shrank. The heat treatment of the carbonized PR mask facilitated epitaxial lateral overgrowth (ELO) of a-plane GaN films without carbon contamination on the R-plane sapphire substrate. Thhe surface morphology of a-plane GaN films was investigated by scanning electron microscopy and atomic force microscopy. The structural characteristics of a-plane GaN films on an R-plane sapphire substrate were evaluated by ${\omega}-2{\theta}$ high-resolution X-ray diffraction. The a-plane GaN films were characterized by X-ray photoelectron spectroscopy (XPS) to determine carbon contamination from carbonized PR masks in the GaN film bulk. After $Ar^+$ ion etching, XPS spectra indicated that carbon contamination exists only in the surface region. Finally, the heat treatment of carbonized PR masks was used to grow high-quality a-plane GaN films without carbon contamination. This approach showed the promising potential of the ELO process by using a PR mask.

A Novel Measuring Method of In-plane Position of Contact-Free Planar Actuator Using Binary Grid Pattern Image (이진 격자 패턴 이미지를 이용한 비접촉식 평면 구동기의 면내 위치(x, y, $\theta$) 측정 방법)

  • 정광석;정광호;백윤수
    • Journal of the Korean Society for Precision Engineering
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    • v.20 no.7
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    • pp.120-127
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    • 2003
  • A novel three degrees of freedom sensing method utilizing binary grid pattern image and vision camera is presented. The binary grid pattern image is designed by Pseudo-Random Binary Arrays and referenced to encode in-plane position of a moving stage of the contact-free planar actuator. First, the yaw motion of the stage is detected using fast image processing and then the other planar positions, x and y, are decoded with a sequence of images. This method can be applied to the system that needs feedback of in-plane position, with advantages of a good accuracy and high resolution comparable with the encoder, a relatively compact structure, no friction, and a low cost. In this paper, all the procedures of the above sensing mechanism are described in detail, including simulation and experiment results.

A Design of the Diplexer for Satellite Transponder using Waveguide E-plane Discontinuities (도파관 전계면 불연속 구조를 이용한 위성 중계기용 다이플렉서의 설계)

  • 최상윤;강우정;이상웅;최성진;라극환
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.30A no.4
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    • pp.1-10
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    • 1993
  • This paper presents the designing/manufacturing scheme of the diplexer for satellite transponder which is composed of 2-channel bandpass filters, coupled with E-plane T-junction, having symmetrical waveguide E-plane step discontinuity structures. The 2-channel bandpass filters of the diplexer are designed by the scheme of connecting ${\lambda}_{g}$/2 shunt stub to the waveguide E-plane, playing the role of heat sinks without attaching a special heat sinks and to give the profitable productivity and allow the low-cost manufacturing at mass production, tuning screws are eliminated which have been used to compensate the operating characteristics of manufactured filters. The 2 channel bandpass filters of manufactured 14/12 GHz diplexer for domestic Ku-band satellite transponder have the return loss of 25 dB, insertion loss of 0.3 dB in passband, and below-50 dB of stopband characteristics (T$_{x}$ : f$_{o}{\pm}$250 MHz, R$_{x}$ : f$_{o}{\pm}$220 MHz) at room temperature.

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Factors affecting root curvature of mandibular first molar (하악 제1대구치의 치근 만곡에 영향을 주는 요인)

  • Choi Hang-Moon;Yi Won-Jin;Heo Min-Suk;Lee Sam-Sun;Kim Jung-Hwa;Choi Soon-Chul;Park Tae-Won
    • Imaging Science in Dentistry
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    • v.36 no.1
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    • pp.55-62
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    • 2006
  • Purpose : To find the cause of root curvature by use of panoramic and lateral cephalometric radiograph. Materials and Methods : Twenty six 1st graders whose mandibular 1st molars .just emerged into the mouth were selected. Panoramic and lateral cephalometric radiograph were taken at grade 1 and 6, longitudinally. In cephalometric radio graph, mandibular plane angle, ramus-occlusal plane angle, gonial angle, and gonion-gnathion distance (Go-Gn distance) were measured. In panoramic radio graph, elongated root length and root angle were measured by means of digital subtraction radiography. Occlusal plane-tooth axis angle was measured, too. Pearson correlations were used to evaluate the relationships between root curvature and elongated length and longitudinal variations of all variables. Multiple regression equation using related variables was computed. Results : The Pearson correlation coefficient between curved angle and longitudinal variations of occlusal plane-tooth axis angle and ramus-occlusal plane angle was 0.350 and 0.401, respectively (p<0.05). There was no significant correlation between elongated root length and longitudinal variations of all variables. The resulting regression equation was $Y=10.209+0.208X_1+0.745X_2$ (Y: root angle, $X_1$: variation of occlusal plane-tooth axis angle, $X_2$: variation of ramus-occlusal plane angle). Conclusion : It was suspected that the reasons of root curvature were change of tooth axis caused by contact with 2nd deciduous tooth and amount of mesial and superior movement related to change of occlusal plane.

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Crystallographic study of in-plane aligned hybrid perovskite thin film

  • Lee, Rin;Kim, Se-Jun;Seong, Myeong-Mo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.163.1-163.1
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    • 2016
  • Lead halide perovskites CH3NH3PbX3 (X=Cl, Br, I) have received great interest in the past few years because of their excellent photoelectronic properties as well as their low-cost solution process. Their theoretical efficiency limit of the solar cell devices was predicted around 31% by a detailed balance model for the reason that exceptional light-harvesting and superior carrier transport properties. Additionally, these excellent properties contribute to the applications of optoelectronic devices such as LASERs, LEDs, and photodetectors. Since these devices are mainly using perovskite thin film, one of the most important factor to decide the efficiency of these applications is the quality of the film. Even though, optoelectrical devices are composed of polycrystalline thin film in general, not a single crystalline form which has longer carrier diffusion length and lower trap density. For these reasons, monodomain perovskite thin films have potential to elicit an optimized device efficiency. In this study, we analyzed the crystallography of the in-plane aligned perovskite thin film by X-ray diffraction (XRD) and selected area electron diffraction (SAED). Also the basic optic properties of perovskites were checked using scanning electron microscopy (SEM) and UV-Vis spectrum. From this work, the perovskite which is aligned in all directions both of out-of-plane and in-plane was fabricated and analyzed.

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Comparative study of InGaN/GaN multi-quantum wells in polar (0001) and semipolar (11-22) GaN-based light emitting diodes

  • Song, Ki-Ryong;Oh, Dong-Sub;Shin, Min-Jae;Lee, Sung-Nam
    • Journal of Ceramic Processing Research
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    • v.13 no.spc2
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    • pp.295-299
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    • 2012
  • We investigated the crystal and the optical properties of GaN-based blue light emitting diodes (LEDs) which were simultaneously grown on c-plane (0001) and semipolar (11-22) GaN templates by using metal-organic chemical vapor deposition (MOCVD). The X-ray rocking curves (XRCs) full width at half maximums (FWHMs) of c-plane (0001) and semipolar (11-22) GaN templates were 275 and 889 arcsec, respectively. In addition, high-resolution X-ray ω-2θ scan showed that satellite peaks of semipolar (11-22) InGaN quantum-wells (QWs) was weaker and broader than that of c-plane (0001) InGaN QWs, indicating that the interface quality of c-plane (0001) QWs was superior to that of semipolar (11-22) QWs. Photoluminescence (PL) and electroluminescence (EL) results showed that the emission intensity and the FWHMs of polar c-plane (0001) LED were much higher and narrower than those of semipolar (11-22) LED, respectively. From these results, we believed that relative poor crystal quality of semipolar (11-22) GaN template might give rise to the poor interfacial quality of QWs, resulting in lower output power than conventional c-plane (0001) GaN-based LEDs.

X-선 Lang 토포그래피를 이용한 사파이어 단결정 웨이퍼 결함 분석

  • Jeon, Hyeon-Gu;Bin, Seok-Min;Lee, Yu-Min;O, Byeong-Seong;Kim, Chang-Su
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.371-371
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    • 2013
  • 사파이어 단결정 웨이퍼는 제조과정에서 결정 성장 조건 및 기계적 연마에 의하여 내부적인 결함이 발생할 수 있다. 사파이어 단결정은 일반적으로 LED용 기판 재료로 사용되며, 내부결함이 발생 시 기판 위의 GaN 등 layer의 결함도 함께 증가하므로 기판의 결함을 줄이는 과정이 중요한 이슈이다. 이 과정에 X-선 토포그래피는 단결정의 내부 결함을 모니터링 하는데 있어서 매우 유용한 방법이다. 이에 본 연구에서는 사파이어 단결정 웨이퍼에 내재하는 결함 형태를 X-선 Lang 토포그래피 방법(X-ray Lang Topography)으로 이미징하여 관찰, 분석하였다. Lang 토포그래피 방법은 X-선 투과법으로 넓은 부분을 우수한 강도와 분해능으로 내부 결함을 관찰할 수 있는 장점을 지니고 있다. X-선 source는 Mo $k{\alpha}$ 1을 사용하였으며, 시료는 c-plane 사파이어 웨이퍼를 사용하였다. 사파이어 웨이퍼의 (110), (102) 회절면의 X-선 토포그래피 이미지를 통해 전위 결함의 유형에 따른 이미지 패턴의 형성 메커니즘에 대해 연구하였고, 측정 회절면과 두께, 표면 데미지에 따른 전위 결함 이미지의 변화를 확인하였다. X-선 토포그래피 이미지를 통해 단결정 c-plane 사파이어 웨이퍼의 전위 결함의 형성 메카니즘 연구와 유형별 이미지와 회절면, 두께, 표면 데미지에 따른 이미지 변화 등을 확인하였다.

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