• Transactions on Electrical and Electronic Materials
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• 제12권2호
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• pp.51-55
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• 2011

We investigated the etching characteristics of zinc oxide (ZnO) thin films deposited by the atomic layer deposition method. The gases of the inductively coupled plasma chemistry consisted of $Cl_2$, Ar, and $O_2$. The maximum etch rate was 40.3 nm/min at a gas flow ratio of $Cl_2$/Ar=15:5 sccm, radio-frequency power of 600 W, bias power of 200 W, and process pressure of 2 Pa. We also investigated the plasma induced damage in the etched ZnO thin films using X-ray diffraction (XRD), atomic force microscopy and photoluminescence (PL). A highly oriented (100) peak was present in the XRD spectroscopy of the ZnO samples. The full width at half maximum value of the ZnO sample etched using the $O_2/Cl_2$/Ar chemistry was higher than that of the as-deposited sample. The roughness of the ZnO thin films increased from 1.91 nm to 2.45 nm after etching in the $O_2/Cl_2$/Ar plasma chemistry. Also, we obtained a strong band edge emission at 380 nm. The intensities of the peaks in the PL spectra from the samples etched in all of the chemistries were increased. However, there was no deep level emission.

• 한국통신학회논문지
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• 제18권8호
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• pp.1169-1175
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• 1993

레이다의 추적 및 탐색으로 부터 비행 물체를 보호하기 위한 목적으로, 알루미늄 합금표면에 페라이트-탄화규소 복합물인 마이크로파 흡수층을 플라즈마 용사방식으로 제작하였다. 본 논문에서는 페라이트-탄화규소층(I) 제조시 사용했던 탄화규소 입자의 평균크기인 34[rm]대신에15[rm]가 사용되었으며, 플라즈마 용사변수들 중에서 분말의 공급비율은 70[Kg/h]대신에 50[Kg/h] 그리고, 용사거리는 80[mm[ 대신에 100[mm]가 사용 되었다. X-band(8~12.4(GHz)레이다용 페라이트-탄화규소 전자파 흡수체를 실험적으로 설계하고 시험제작하여 전기적 특성을 평가한 결과, -lOdB의 반사량을 허용한도로 했을 때 약 2.8%의 대역폭이 얻어졌으며, 최대 흡수두께는 0.5(mm)로 매우 양호한 박층형 전자파 흡수체가 얻어졌다.

• Composites Research
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• 제29권6호
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• pp.336-341
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• 2016

본 논문에서는 복합재 풍력 블레이드를 위한 CNT 코팅 유리섬유의 전자기적/기계적 적용성에 대한 연구를 수행하였다. MW급 이상의 대형 복합재 블레이드는 민수용/군수용 레이더와의 신호간섭 문제로 인한 발전단지 위치선정 제약과 무게 증가에 따른 발전효율 저해, 구조적 건전성 부족에 따른 수리비용 증가의 당면과제를 안고 있다. 이에 본 연구에서는 이러한 문제를 극복하기 위한 방안으로 CNT 코팅 유리섬유를 제안하였다. 먼저 제안된 CNT 코팅 공정을 통해 유리섬유 표면에 CNT를 강력히 코팅하고, Va-RTM을 통해 CNT 코팅/유리섬유 에폭시 복합재를 제작하여 전자기적/기계적 물성을 평가하였다. 또한 전자파 흡수체 설계/제작 및 시험/평가를 통해 X-band의 8.3~12.1 GHZ에서 90% 이상 전자파 흡수성능을 가짐을 검증하였다. 이와 더불어 기계적 물성 시험/평가를 통해서 인장, 압축, 면내전단 강도/강성의 모든 기계적 물성이 향상됨을 확인하였다.

• 한국통신학회논문지
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• 제17권6호
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• pp.580-588
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• 1992

비행물체에 대한 레이다의 추적 및 탐색거리를 축소시키는 전자방어책의 일환으로 물리적, 기계적 특성이 우수한 전자파 흡수층을 제작하기 위해서 플라즈마 용사방삭을 이용하였다. 이 코팅층은 종래의 M/W흡수층 제작에 사용하던 도전재료인 탄소대신에 탄화규소를, 자성손실재료로는 Ni-Zn ferrite를, 그리고 보지재를 사용하는 대신에 이들 재료분말을 기계적으로 혼합하여 플라즈마 용사코팅으로 모재 표면에 직접 흡수층이 형성되도록 했다. X-band(8~13 GHz)레이다용 탄화규소-페리이트 전자파 흡수체를 실험적으로 설계하고 시험제작하여 전기적 특성을 평가한 결과, -6dB(M/W 에너지 흡수율 75%)의 반사량을 허용한도로 했을경우 약 7.6~8.4%의 대역폭이 얻어졌으며, 최대 흡수두께가 0.5~0.55mm로 매우 양호한 박층형 전자파 흡수체가 얻어졌다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.461-461
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• 2013

Over the last decade, zinc oxide (ZnO) thin films have attracted considerable attention owing to large band gap of 3.37 eV and large exciton binding energy of 60 meV at room temperature [1-3]. Recent interest in ZnO related researches has been switched into the fabrication and characterization of low-dimensional nanostructures, such as nano-wires and nano-dots that can be applicable to manufacture the optoelectronic devices such as ultraviolet lasers, light-emitting-diodes and detectors. Since the optical properties of ZnO nano-structures might be distinct from those of bulk materials or thin films, the low-dimensional phenomena should be examined further. In order to utilize such advanced optoelectronic devices, one of the challenges is how to control the surface state related emissions that are drastically increased with increasing the density of the nano-structures and the surface-to-volume ratio. This paper reports the synthesis and characterization of self-assembled ZnO hexagonal nano-disks grown by radio-frequency magnetron sputtering. X-ray diffraction data and scanning electron microscopy data showed that ZnO hexagonal nano-disks were nucleated on top of the flat surfaces as the film thickness reached to 1.56 ${\mu}m$ and then the number of nano-disks increased with increasing the film thickness. The lateral size of hexagonal nano-disks was ~720 nm and height was ~74 nm. The strong photo luminescence spectra obtained at 10 K was also observed, which was assigned to a surface exciton emission at 3.3628 eV arising from the surface sites of hexagonal nano-disks.

• Journal of Astronomy and Space Sciences
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• 제34권4호
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• pp.303-314
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• 2017

With increased human activity in space, the risk of re-entry and collision between space objects is constantly increasing. Hence, the need for space situational awareness (SSA) programs has been acknowledged by many experienced space agencies. Optical and radar sensors, which enable the surveillance and tracking of space objects, are the most important technical components of SSA systems. In particular, combinations of radar systems and optical sensor networks play an outstanding role in SSA programs. At present, Korea operates the optical wide field patrol network (OWL-Net), the only optical system for tracking space objects. However, due to their dependence on weather conditions and observation time, it is not reasonable to use optical systems alone for SSA initiatives, as they have limited operational availability. Therefore, the strategies for developing radar systems should be considered for an efficient SSA system using currently available technology. The purpose of this paper is to analyze the performance of a radar system in detecting and tracking space objects. With the radar system investigated, the minimum sensitivity is defined as detection of a $1-m^2$ radar cross section (RCS) at an altitude of 2,000 km, with operating frequencies in the L, S, C, X or Ku-band. The results of power budget analysis showed that the maximum detection range of 2,000 km, which includes the low earth orbit (LEO) environment, can be achieved with a transmission power of 900 kW, transmit and receive antenna gains of 40 dB and 43 dB, respectively, a pulse width of 2 ms, and a signal processing gain of 13.3 dB, at a frequency of 1.3 GHz. We defined the key parameters of the radar following a performance analysis of the system. This research can thus provide guidelines for the conceptual design of radar systems for national SSA initiatives.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권5호
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• pp.326-332
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• 1999

In this paper, we designed and fabricated High-Tc Superconducting (HTS) microstrip bandpass filters using Stepped Impedance Resonators(SIR) and studied on their characteristics. The $high-T_c$ superconducting $Y_1Ba_2Cu_3O_{7-x}$ epitaxial films were deposited by Pulse Laser Deposition (PLD) system on MgO. The fabricated filters were designed so as to operate in Ku band with central frequency 17.25 GHz, bandwidth 2.896% and ripple 0.01 dB. These filters were composed of parallel coupled microstrip SIR of which impedance ratio (K) are 0.5, 1.5. In the measured response, HTS filters had showed insertion loss below -0.5 dB. For comparison with normal conducting filter, we fabricated the Au counterpart that consists of the resonators as K=1.5 in the same dimension and measured performance of the Au filter. In comparison, HTS filter designed optimally got superior response to gold conterpart.

• 한국전기전자재료학회논문지
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• 제29권9호
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• pp.546-551
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• 2016

$SrSnO_3:Tb^{3+}$ phosphor thin films were prepared on sapphire and quartz substrates in the growth temperature range of $100{\sim}400^{\circ}C$ by using the radio frequency magnetron sputtering deposition. The resulting $SrSnO_3:Tb^{3+}$ thin films were characterized by X-ray diffraction, scanning electron microscopy, ultraviolet-visible-infrared spectrophotometer, and photoluminescence spectrometer. The results indicated that the morphology, optical transmittance, band gap energy, and luminescence intensity of the phosphor thin films significantly depended on the growth temperature. All the thin films, regardless of the type of substrate, showed an amorphous behavior. As for the thin films deposited on sapphire substrate, the maximum crystallite size was obtained at a growth temperature of $400^{\circ}C$ and the strongest emission was green at 544 nm arising from the $^5D_4{\rightarrow}^7F_5$ transition of Tb3+. The average optical transmittance for all the thin films grown on sapphire and quartz substrates was decreased as the growth temperature increased from 100 to $400^{\circ}C$. The results suggest that the optimum growth temperatures for depositing highly-luminescent $SrSnO_3:Tb^{3+}$ phosphor thin films on sapphire and quartz substrates are 400 and $300^{\circ}C$, respectively.

• 한국자기학회지
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• 제21권6호
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• pp.208-213
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• 2011

Mori-Kawabata의 사영 연산자 방법을 $^{55}Mn$이 첨가된 $SrTiO^3$ 단 결정에 직접 적용하여, 이를 운동 방정식의 형태로 만드는 이론 체계를 사용하여 선모양 함수를 계산하였다. 외부 진동수 ${\nu}_0$ = 9.6 GHz에서 서로 다른 농도 [Mn] = 0.5 wt%와 2 wt%에 대한 온도 의존성으로 선폭을 조사하였다. 온도가 증가함에 따라 선폭은 감소하는 경향으로 확인되었고, 이는 선모양의 운동 좁아짐으로 보이며 고온영역 에서는 실험값과 비교적 일치함을 알 수 있었다. 이와 같이 계를 기술하는 스핀 해밀토니안에 연산자 방법을 이용한 선모양 함수는 실제 계의 적용에 편리한 급수전개로 하였으며, 다른 방법들에 비해 비교적 쉽게 계산할 수 있었다.

• 한국전기전자재료학회논문지
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• 제32권5호
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• pp.387-392
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• 2019

$Dy^{3+}$ and $Eu^{3+}$-co-doped $La_2MoO_6$ phosphor thin films were deposited on sapphire substrates by radio-frequency magnetron sputtering at various growth temperatures. The phosphor thin films were characterized using X-ray diffraction (XRD), scanning electron microscopy, ultraviolet-visible spectroscopy, and fluorescence spectrometry. The optical transmittance, absorbance, bandgap, and photoluminescence intensity of the $La_2MoO_6$ phosphor thin films were found to depend on the growth temperature. The XRD patterns demonstrated that all the phosphor thin films, irrespective of growth temperatures, had a tetragonal structure. The phosphor thin film deposited at a growth temperature of $100^{\circ}C$ indicated an average transmittance of 85.3% in the 400~1,100 nm wavelength range and a bandgap energy of 4.31 eV. As the growth temperature increased, the bandgap energy gradually decreased. The emission spectra under ultraviolet excitation at 268 nm exhibited an intense red emission line at 616 nm and a weak emission line at 699 nm due to the $^5D_0{\rightarrow}^7F_2$ and $^5D_0{\rightarrow}^7F_4$ transitions of the $Eu^{3+}$ ions, respectively, and also featured a yellow emission band at 573 nm, resulting from the $^4F_{9/2}{\rightarrow}^6H_{13/2}$ transition of the $Dy^{3+}$ ions. The results suggest that $La_2MoO_6$ phosphor thin films can be used as light-emitting layers for inorganic thin film electroluminescent devices.