• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.17-20
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• 2001

Nonvolatile semiconductor memory devices with reoxidized nitrided oxide(RONO) gate dielectrics were fabricated, and nitrogen distribution and bonding species which contribute to memory characteristics were analyzed. Also, memory characteristics of devices depending on the anneal temperatures were investigated. The devices were fabricated by retrograde twin well CMOS processes with $0.35{\mu}m$ Nonvolatile semiconductor memory devices with reoxidized nitrided oxide(RONO) gate dielectric were fabricated, and nitrogen distribution and bonding species which contributing memory characteristics were analyzed. Also, memory characteristics of devices according to anneal temperatures were investigated. The devices were fabricated by $0.35{\mu}m$ retrograde twin well CMOS processes. The processes could be simple by in-situ process of nitridation anneal and reoxidation. The nitrogen distribution and bonding state of gate dielectric were investigated by Dynamic Secondary Ion Mass Spectrometry(D-SIMS), Time-of-Flight Secondary Ion Mass Spectrometry(ToF-SIMS), and X-ray Photoelectron Spectroscopy(XPS). Nitrogen concentrations are proportional to nitridation anneal temperatures and the more time was required to form the same reoxidized layer thickness. ToF-SIMS results show that SiON species are detected at the initial oxide interface and $Si_{2}NO$ species near the new $Si-SiO_{2}$ interface that formed after reoxidation. As the anneal temperatures increased, the device showed worse retention and degradation properties. These could be said that nitrogen concentration near initial interface is limited to a certain quantity, so excess nitrogen are redistributed near the $Si-SiO_{2}$ interface and contributed to electron trap generation.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.5 no.3
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• pp.197-203
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• 2004

New lithography techniques are employed for the patterning of arbitrary shapes in nanometer scale. When, in the photolithography, the electromagnetic waves such as UV and X-ray are incident on the mask patterned in nanometer scale, the diffraction effect is unavoidable and degrades images of the mask imprinted on wafer. Only a convex lens is well-known Fourier transformer. It is possible to make the mask Fourier-transformed with the convex lens, even though the size of pattern on the mask is very large compared to the wavelength of electromagnetic wave. If the mask, modified according to new technique described in this paper, was placed at the front of the lens and was illuminated with laser beam, the nanometer-size patterns are only formed on the plane called Fourier transform plane. The new method presented here is quite simple setup and comparable with present and next generation lithographies such as UV/EUV photolithograpy and electron projection lithography when compared in attainable minimum linewidth. In this paper, we showed our theoretical research work in the field of Fourier optics, . In the near future, we are going to verify this theoretical work by experiments.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.17 no.2
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• pp.1-7
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• 2016

Although the second driving device of KTX, which consists of the wheel and the axle reduction gears unit, is a mechanically integrated structure, its preventive maintenance (PM) requires two separate intervals due to the different technical requirements. In particular, these subsystems perform attaching and detaching work simultaneously according to the maintenance directive. Therefore, to reduce the unnecessary amount of PM and high logistic availability of the train, it is important to optimize PM with regard to reliability-centered maintenance toward a cost-effective solution. In this study, fault tree analysis and reliability of the subsystems, considering the criticality of the components, were performed using the data derived from field data in maintenance. The cost optimization of the PM was derived from a genetic algorithm considering the target reliability and improvement factor. The cost optimization was derived from a maximum of the fitness function of the individual in generation. The optimal TBO of them using the genetic algorithm was 2.85x106 km, which is reduced to approximately 21% compared to the conventional method.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.243-243
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• 2010

Low-temperature grown (LTG) InGaAs epilayers were grown by MBE technique for studying a correlation between terahertz (THz) emission and the intrinsic defects. The 1.2-um-thick Be-compensated LTG-InGaAs epilayers were prepared on SI-InP:Fe substrate at $200-250^{\circ}C$, and subsequently in-situ annealed under As environment at $550^{\circ}C$ for 5-30 minutes. The carrier concentration/mobility and the crystalline structure were analyzed by the Hall effect and the x-ray diffraction (XRD), respectively, and the carrier lifetime were determined by the fs time-resolved pump-probe spectroscopy. THz generation from LTG-InGaAs was carried out by a Ti-sapphire laser (800 nm) of a pulse width of 190 fs at a repetition of 76 MHz. Figure shows the spectral amplitude of generated waves in the THz region. As the growth temperature of epilayer increases, the amplitude is enhanced. However, two samples grown at $200^{\circ}C$, as-grown and annealed, show almost no difference in the spectral amplitude. This suggests that the growth temperature is critical in the formation of defect states involved in THz emission. We are now investigating the correlations between the XRD band attributed to defects, the Hall parameter, and the spectral amplitude of generated THz wave.

• 한국신재생에너지학회:학술대회논문집
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• 2011.11a
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• pp.57.2-57.2
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• 2011

Dye-sensitized solar cells (DSSC) have recently been developed as a cost-effective photovoltaic system due to their low-cost materials and facile processing. The production of DSSC involves chemical and thermal processes but no vacuum is involved. Therefore, DSSC can be fabricated without using expensive equipment. The use of dyes and nanocrystalline $TiO_2$ is one of the most promising approaches to realize both high performance and low cost. The efficiency of the DSSC changes consequently in the particle size, morphology, crystallization and surface state of the $TiO_2$. Nanocrystalline $TiO_2$ materials have been widely used as a photo catalyst and an electron collector in DSSC. Front electrode in DSSC are required to have an extremely high porosity and surface area such that the dyes can be sufficiently adsorbed and be electronically interconnected, resulting in the efficient generation of photocurrent within cells. In this study, DSSC were fabricated by an screen printing for the $TiO_2$ thin film. $TiO_2$ nanoparticles characterized by X-ray diffractometer (XRD) and scanning electron microscope (SEM) and scanning auger microscopy (SAM) and zeta potential and electrochemical impedance spectroscopy(EIS).In addition, DSSC module was modeled and simulated using the SILVACO TCAD software program. Improve the efficiency of DSSC, the effect of $TiO_2$ thin film thickness and $TiO_2$ nanoparticle size was investigated by SILVACO TCAD software program.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.468-468
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• 2011

Carbon nanotubes (CNTs) have been considered as one of the promising candidate for next-generation field emitters because of their unique properties, such as high field enhancement factor, good mechanical strength, and excellent chemical stability. So far, a lot of researchers have been interested in field emission properties of CNT itself. However, it is necessary to study proper field emitter shapes, as well as the fundamental properties of CNTs, to apply CNTs to real devices. For example, specific applications, such as x-ray sources, e-beam sources, and microwave amplifiers, need to get a focused electron beam from the field emitters. If we use planar-typed CNT emitters, it will need several focal lenses to reduce a size of electron beam. On the other hand, the point-typed CNT emitters can be an effective way to get a focused electron beam using a simple technique. Here, we introduce a fabrication of CNT fibers with nanoscale point tips which can be used as a point-typed emitter. The emitter made by the CNT fibers showed very low turn-on electric field, high current density, and large enhancement factor. In addition, it showed stable emission current during long operation period. The high performance of CNT point emitter indicated the potential e-beam source candidate for the applications requiring small electron beam size.

• Journal of Cadastre & Land InformatiX
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• v.49 no.2
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• pp.67-82
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• 2019

The purpose of this study is to analyze the issues and perceptions of smart cities. First, based on the big data analysis platform, big data analysis on smart cities were conducted to derive keywords by year, word cloud, and frequency of generation of smart city keywords by time. Second, trend and flow by area were analyzed by reclassifying major keywords by year based on meta-keywords. Third, emotional recognition flow for smart cities and major emotional keywords were derived. While U-City in the past is mostly centered on creating infrastructure for new towns, recent smart cities are focusing on sustainable urban construction led by citizens, according to the analysis. In addition, it was analyzed that while infrastructure, service, and technology were emphasized in the past, management and methodology were emphasized recently, and positive perception of smart cities was growing. The study could be used as basic data for the past, present and future of smart cities in Korea at a time when smart city services are being built across the country.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.167-167
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• 2011

Magnetic random access memory (MRAM) is one of the prospective semiconductor memories for next generation. It has the excellent features including nonvolatility, fast access time, unlimited read/write endurance, low operating voltage, and high storage density. MRAM consists of magnetic tunnel junction (MTJ) stack and complementary metal-oxide semiconductor (CMOS). The MTJ stack is composed of various magnetic materials, metals, and a tunneling barrier layer. For the successful realization of high density MRAM, the etching process of magnetic materials should be developed. Among various magnetic materials, FePt has been used for pinned layer of MTJ stack. The previous etch study of FePt magnetic thin films was carried out using $CH_4/O_2/NH_3$. It reported only the etch characteristics with respect to the variation of RF bias powers. In this study, the etch characteristics of FePt thin films have been investigated using an inductively coupled plasma reactive ion etcher in various etch chemistries containing $CH_4$/Ar and $CH_4/O_2/Ar$ gas mixes. TiN thin film was employed as a hard mask. FePt thin films are etched by varying the gas concentration. The etch characteristics have been investigated in terms of etch rate, etch selectivity and etch profile. Furthermore, x-ray photoelectron spectroscopy is applied to elucidate the etch mechanism of FePt thin films in $CH_4$/Ar and $CH_4/O_2/Ar$ chemistries.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.390-390
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• 2012

Information technology industries has grown rapidly and demanded alternative memories for the next generation. The most popular random access memory, dynamic random-access memory (DRAM), has many advantages as a memory, but it could not meet the demands from the current of developed industries. One of highlighted alternative memories is magnetic random-access memory (MRAM). It has many advantages like low power consumption, huge storage, high operating speed, and non-volatile properties. MRAM consists of magnetic-tunnel-junction (MTJ) stack which is a key part of it and has various magnetic thin films like CoFeB, FePt, IrMn, and so on. Each magnetic thin film is difficult to be etched without any damages and react with chemical species in plasma. For improving the etching process, a high density plasma etching process was employed. Moreover, the previous etching gases were highly corrosive and dangerous. Therefore, the safety etching gases are needed to be developed. In this research, the etch characteristics of CoFeB magnetic thin films were studied by using an inductively coupled plasma reactive ion etching in $CH_4/O_2/Ar$ gas mixes. TiN thin films were used as a hardmask on CoFeB thin films. The concentrations of $O_2$ in $CH_4/O_2/Ar$ gas mix were varied, and then, the rf coil power, gas pressure, and dc-bias voltage. The etch rates and the selectivity were obtained by a surface profiler and the etch profiles were observed by a field emission scanning electron microscopy. X-ray photoelectron spectroscopy was employed to reveal the etch mechanism.

• Asian-Australasian Journal of Animal Sciences
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• v.31 no.3
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• pp.335-343
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• 2018

Objective: Remarkable difference in cellular activity was found between early and late subpassaged embryonic stem cell (ESCs) lines, which can be created by subtle changes in cell manipulation protocol. This study subsequently examined whether post-thaw subculture of early subpassaged ESC lines could further affect the activity of the ESCs. Methods: Fresh (as a control treatment) or cryopreserved F1 hybrid (B6CBAF1) early ESC lines (C57BL/6xCBA) of the 4 (P4) or the 19 passage (P19) were subcultured once, twice or six times under the same condition. The post-thaw survival of the ESCs was monitored after the post-treatment subculture and the ability of cell proliferation, reactive oxygen species (ROS) generation, apoptosis and mitochondrial ATP synthesis was subsequently examined. Results: Regardless of the subculture number, P19 ESCs showed better (p<0.05) doubling time and less ATP production than P4 ESCs and such difference was not influenced by fresh or cryopreservation. The difference between P4 and P19 ESC lines became decreased as the post-treatment subculture was increased and the six times subculture eliminated such difference. Similarly, transient but prominent difference in ROS production and apoptotic cell number was detected between P4 and P19 ESCs only at the 1st subculture after treatment, but no statistical differences between two ESC lines was detected in other observations. Conclusion: The results of this study suggest that post-thaw subculture of ESCs under the same environment is recommended for standardizing their cellular activity. The activity of cell proliferation ability and ATP synthesis can be used as parameters for quality control of ESCs.