• Proceedings of the Korea Crystallographic Association Conference
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• 2003.05a
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• pp.6-6
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• 2003

Highly crystalline 5H-polytypic form of sp3-bonded boron nitride (BN) was grown by pulsed-laser-vaporization of BN, where synchronous reactive-plasma packets assisted the crystal growth in the vapor phase. The structure of the product crystallites (˙5 micrometers) was confirmed by using transmission electron diffraction and electron energy loss spectroscopy. This material proved to have a sharp and dominant band at 225 nm by cathode luminescence at room temperatures and corresponding monochromatic images revealed that they uniformly emitted the ultraviolet light. Considering that cubic BN has already been doped as p- and n- type semiconductors, this material may be applied to the light-emitting devices working at almost the deepest limit of the UV region that is functional without vacuum.

• Journal of the Korean institute of surface engineering
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• v.37 no.3
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• pp.164-168
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• 2004

Polycrystalline silicon thin films were deposited by inductively coupled plasma (ICP) assisted magnetron sputtering using a gas mixture of Ar and $H_2$ on a glass substrate at $250^{\circ}C$. At constant Ar mass flow rate of 10 sccm, the working pressure was changed between 10mTorr and 70mTorr with changing $H_2$ flow rate. The effects of RF power applied to ICP coil and $Ar/H_2$ gas mixing ratio on the properties of the deposited Si films were investigated. The crystallinity was evaluated by both X-ray diffraction and Raman spectroscopy. From the results of Raman spectroscopy, the crystallinity was improved as hydrogen mixing ratio was increased up to$ Ar/H_2$=10/16 sccm; the maximum crystalline fraction was 74% at this condition. When RF power applied to ICP coil was increased, the crystallinity was also increased around 78%. In order to investigate the surface roughness of the deposited films, Atomic Force Microscopy was used.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.43 no.3
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• pp.478-484
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• 1994

Facing target dc sputtering system developed by Hoshi et al. has simple configuration and high deposition rate under moderate substrate temperature in the range of pressure 5x10S0-4T - 1x10S0-2T torr. In this system, magnetic field should be applied perpendicular to the target surface in order to confine high energy secondary electrons between two targets. Because of this magnetic field, the glow discharge characteristics are very different from dc planar diode system showing some unstable discharge region. In this paper, the glow discharge characteristics of this system have been studied under the condition of Ti targets with Ar-NS12T(10%) as working gas. It is found that this system has stable discharge region under the discharge current density of 15-30(mA/cmS02T). The plasma density and electron temperature are in the range of 10S010Y - 10S011T(CMS0-3T) and 2.5-5(eV), respectively.

• Journal of the Microelectronics and Packaging Society
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• v.7 no.2
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• pp.1-6
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• 2000

X-ray lithography mask with SiC membrane and Ta absorber patterns has been fabricated using ECR plasma CVD, d.c. magnetron sputtering, and ECR plasma etching. The stress of stoichiometric SiC film was adjusted by rapid thermal annealing under $N_2$, ambient. Adjusting the working pressure during sputtering process resulted in a near-zero residual stress, reasonable density, and smooth surface morphology of Ta film. Cl-based plasma showed a good etching characteristics of Ta, and two-step etching process was implemented to suppress microloading effect fur sub-quarter $\mu\textrm{m}$ patterning.

• Journal of the Korean Society for Heat Treatment
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• v.4 no.4
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• pp.1-14
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• 1991

In PECVD(Plasma-Enhanced Chemical Vapor Deposition) process, titanium nitride is thin and its adhesion is poor for the protective coatings. Therefore it has been studied that intermediate layer forms between substrate and TiN thin film. Using R.F. plasma nitriding, nitride layer was first formed, then TiN thin film coated by PECVD. The chemical composition of the coatings has been characterized using AES, EDS and their crystallographic structure by means of XRD. Mechanical properties such as microhardness and film adhesion have also been determined by vickers hardness test, scratch test and indentation test. As a result, there was no difference in chemical composition and structure between the TiN deposition only and the composite of TiN deposition on nitrided steel. It was found that nitrided substrate increased the hardness of TiN coatings and was beneficial in preventing the plastic deformation in the substrate. Therefore the effective load bearing capacity of the TiN coatings on nitrided steel was increased and their adhesion was improved as well. According to the results of this study, the processes that lead to the formation of composite layers characterized by good working properties, i.e., high microhardness, adhesion and resistance to deformation.

• Transactions of Materials Processing
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• v.18 no.8
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• pp.625-632
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• 2009

The influence of the subsequent-annealing(SA) temperature on the plasma electrolytic oxidation(PEO)-treated Mgbased alloy was investigated in terms of surface properties associated with hardness and corrosion. For this purpose, a series of the SA treatments were performed on the PEO-treated samples at four different temperatures, i.e., 100, 150, 200, and $250^{\circ}C$ for 10 hrs. When compared to the sample without SA, the samples annealed at temperatures higher than $200^{\circ}C$ showed a difference in surface morphology due to the volume expansion accompanied by the dehydration reaction where the part of $Mg(OH)_2$ changed into MgO, working as harder phase. From the results of nano-indentation tests, the applied loads of the samples were seen to increase with increasing SA temperatures. However, the electro-chemical and corrosion properties of the sample annealed at $150^{\circ}C$ were higher than those of the samples annealed at three temperatures.

• Journal of Korean Ophthalmic Optics Society
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• v.11 no.4
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• pp.311-315
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• 2006

We investigated X-ray radiated from the pulsed Plasma Focus device that translated from electric energy into electromagnetic wave by electric discharge. X-ray radiation is analysed by using pin photodiode and 0.5mm pinhole camera shielded by $25{\mu}m$ Be. The condition of X-ray radiation was that the discharging voltage was 15 kV and the working gas were 0.12 torr Argon. Reproducibility of X-ray radiation is investigated and X-ray temperature is calculated above 3keV.

• Journal of Korean Ophthalmic Optics Society
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• v.5 no.2
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• pp.163-165
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• 2000

We investigated visible light radiated from Plasma Focus device by time-integrated analyzed method. Plasma focus is a device that translated from electric energy into visible light by electric discharge. Spectral analysis is using Monochromator(focal length = 0.5 m). Time-integrated spectrum is analyzed with densitometer the film which developed a constant range of wavelength. The condition of visible emission was that the discharging voltage was 13 kV and the working gas were Argon and Helium.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.6
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• pp.591-598
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• 2006

The research was tried to investigate the hydrogen generation from water by the pulsed power plasma process. Hydrogen was generated by way of the electrical pulse power discharge process with the ultrasonic wave. The yield on the hydrogen generation was also studied with and without operating the ultrasonic generator, in which the applied high voltage was varied from 10 kV to 15 kV. Nitrogen and argon gases were used as working gases. As the results, the generation yield using the pure nitrogen gas is better than argon and mixed gases such as argon and nitrogen. Hydrogen concentration are significantly increased when the ultrasonic generator was operated with the electrical discharge simultaneously. It is increased with increasing the applied ultrasonic level as well.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.241-241
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• 2009

For the Radio Frequency Integrated Passive Device (RFIPD) application, we have successfully developed and characterized high break-down voltage metal-insulator-metal (MIM) capacitors with 2,000 ${\AA}$ plasma-enhanced chemical vapor deposition (PECVD) silicon nitride which deposited with $SiH_4/NH_3$ gas mixing rate, working pressure, and RF power of PECVD at $250^{\circ}C$ chamber temperature. At the PECVD process condition of gas mixing rate (0.957), working pressure (0.9 Torr), and RF power (60 W), the AFM RMS value of about 2,000 ${\AA}$ silicon nitride on the bottom metal was the lowest of 0.862 nm and break-down electric field was the highest of about 8.0 MV/cm with the capacitance density of 326.5 $pF/mm^2$.