• 한국태양에너지학회:학술대회논문집
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• 2008.04a
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• pp.196-202
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• 2008

Effective climate protection is a most important tasks of our time. The BIPV is one of the most interesting and promisingly possibilities of an active use of solar energy at the building. In this study it was analyzed by the case study the function of the requirement of the BIPV-module as building material and this architectural characteristic according to the kind of the module. Therefore the goal of this study is to get securing the application information of BIPV as windowpane. BIPV modules are manufactured in the form of G/G. In the case of the crystal type the Transparent and the light Transmission is to be adjusted by the spacer attitude of the cell. Although this type could not be optimal for light effect of indoors because of the inequality of shade, the moving shade play makes a dramatic Roomimage by the run of sun. The application of this type would be for canopy, window or roof in the corridor or resounds. With amorphous the type it is to be manufactured simply largely laminar, and thus that will shorten building process. There is a relatively good economy to use and to the window system easily. After the production technology is easy the transparency of the modules to adjust, and the module shows to a high degree constant characteristics of light permeability and transparency. Without mottle of module shade is good the use for the window or roof glazing of office, library, classroom, etc. to adapt. The BIPV modules took generally speaking a function as building material to the daylight use, shading, isolation and also to the sight. That means that BIPV modules have as multifunctional system to sustainable architecture good successes and they are at the same time as Design element for architecture effectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.254.2-254.2
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• 2014

The Transmission Fourier Transform Infrared spectroscopy (FTIR) of SiOx charge storage layer with the richest silicon content showed an assignment at peaks around 2000~2300 cm-1. It indicated that the existence of many silicon phases and defect sources in the matrix of the SiOx films. The total hysteresis width is the sum of the flat band voltage shift (${\Delta}VFB$) due to electron and hole charging. At the range voltage sweep of ${\pm}15V$, the ${\Delta}VFB$ values increase of 0.57 V, 1.71 V, and 13.56 V with 1/2, 2/1, and 6/1 samples, respectively. When we increase the gas ratio of SiH4/N2O, a lot of defects appeared in charge storage layer, more electrons and holes are charged and the memory window also increases. The best retention are obtained at sample with the ratio SiH4/N2O=6/1 with 82.31% (3.49V) after 103s and 70.75% after 10 years. The high charge storage in 6/1 device could arise from the large amount of silicon phases and defect sources in the storage material with SiOx material. Therefore, in the programming/erasing (P/E) process, the Si-rich SiOx charge-trapping layer with SiH4/N2O gas flow ratio=6/1 easily grasps electrons and holds them, and hence, increases the P/E speed and the memory window. This is very useful for a trapping layer, especially in the low-voltage operation of non-volatile memory devices.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.6
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• pp.445-449
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• 2020

Non-volatile memory is approaching its fundamental limits with the Si₃N₄ storage layer, necessitating the use of alternative materials to achieve a higher programming/erasing speed, larger storage window, and better data retention at lower operating voltage. This limitation has restricted the development of the charge-trap memory, but can be addressed by using high-k dielectrics. The paper reviews the doping of nitrogen, titanium, and yttrium on high-k dielectrics as a storage layer by comparing MONOS devices with different storage layers. The results show that nitrogen doping increases the storage window of the Gd₂O₃ storage layer and improves its charge retention. Titanium doping can increase the charge capture rate of HfO₂ storage layer. Yttrium doping increases the storage window of the BaTiO₃ storage layer and improves its fatigue characteristics. Parameters such as the dielectric constant, leakage current, and speed of the memory device can be controlled by maintaining a suitable amount of external impurities in the device.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.112-112
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• 2009

Temperature dependence of the ferroelectric properties of poly(vinylidefluoride-trifluoroethylene) copolymer thin films are studied with various insulators such as $SrTa_2O_6$ and $La_2O_3$. Thin films of poly(vinylidene fluoridetrifluoroethylene) 75/25 copolymer were prepared by chemical solution deposition on p-Si substrate. Capacitance-voltage (C-V) and current density (J-V) behavior of the Au/P(VDF-TrFE)/Insulator/p-Si structures were studied at ($150-200\;^{\circ}C$) and dielectric constant of the each insulators were measured to be about 15 at $850\;^{\circ}C$ for 10 minutes. Memory window width at 5 V bias the MFIS(metal-ferroelectric-insulator-semiconductor) structure with as deposited films was about 0.5 V at high temperature ($200\;^{\circ}C$). And the memory window width increased as voltage increased from 1 V to 5 V.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.16 no.6
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• pp.599-607
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• 2004

The purpose of this study is to reevaluate the performance of Hanji as an architectural material. Hanji has good things in controlling indoor space comfortably. Particularly, ability of controlling humidity of Hanji affects indoor space comfort and human health. The major focuses of this experimental research are (1) how much of water vapor passes through Hanji, (2) how much of water vapor is absorbed into Hanji. In the first case, indoor humidity is higher than outdoor humidity. In this case, approximately 38 g of water vapor passes through Hanji 1, genarally utilized in window paper (Changhoji), per square meter in one hour. And approximately 4 g of water vapor is absorbed into Hanji 2, genarally utilized in wallpaper, per square meter. In the second case, outdoor humidity is higher than indoor humidity. In this case, Hanji passes water vapor to inner space at first, but when indoor relative humidity reach approximately 66%, although outdoor humidity is higher than indoor humidity, water vapor doesn't pass through Hanji. If Hanji is utilized in window material and wallpaper, indoor space is maintained comfortably without mechanical devices in humidity control.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.4
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• pp.304-308
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• 2013

For the application to the window layer of $Cu(In,Ga)Se_2$(CIGS) solar cell, zinc oxide(ZnO) thin film was deposited at various temperatures by in-line pulsed DC sputtering. From the structural, optical, and electrical investigation and analysis, it was possible to obtain the lower thickness, the lower resistivity, and the higher transmittance at a higher process temperature. The energy band gap of ZnO was calculated using the transmittance data and was analyzed in terms of the dependency on temperature. From the X-ray diffraction(XRD) results, it was possible to conclude that a dominant peak was found about $34.2{\sim}34.6^{\circ}$(111) and crystallinity was obtained at a temperature above $150^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.9-12
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• 1998

Film characteristics of thin reoxidized nitrided oxides were investigated by SIMS analysis and C-V method in order to use the gate dielectric for charge-trap type NVSMs instead of ONO stacked layers. Nitric oxide(NO) annealed film has the nitrogen content sharply peaked at the Si-SiO$_2$ interface, while it is broad for nitrous oxide($N_2$O) ambient. The nitrogen peak concentration increased with anneal temperature and time. The position of nitrogen content in the oxide layer was due to be precisely controlled. For the films annealed NO ambient at 80$0^{\circ}C$ for 30min. followed by reoxidized at 85$0^{\circ}C$, the maximum memory window of 3.5V was obtained and the program condition was +12V, 1msec for write and -l3V, 1msec for erase.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.158-158
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• 2010

최근 유리산업은 에너지 절감효과와 친환경 재료의 사용을 바탕으로 하여 기존 유리의 특성을 변화시켜 보다 양질의 재료를 생산해 내고자 한다. 또한 인위적으로 가시광선 전파장에 대한 투과율을 조절할 수 있는 유리 제작의 필요성이 대두되어 스마트 윈도우(smart window)라는 신소재유리가 주목받고 있다. 스마트 윈도우는 태양광의 투과율을 자유롭게 조절할 수 있는 물질을 윈도우에 삽입함으로써 필름을 장착하는 방식에 비하여 태양광의 투과율이 대폭 신장됨과 동시에 사용자에게 고도의 편의성을 제공하는 장점이 있다. 액정과 고분자 매트릭스를 혼합한 PDLC용액을 이용하여 $3{\times}4cm^2$ 크기의 스마트 윈도우를 제작하여 유리 두께, 광량, 스페이서 크기에 따른 투과율을 측정하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.5
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• pp.439-444
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• 2005

We investigated the structural and electrical properties of BLT films grown on Si covered with $ZrO_{2}$ buffer layer. The BLT thin film and $ZrO_{2}$ buffer layer were fabricated using a metalorganic decomposition method. The electrical properties of the MFIS structure were investigated by varying thickness of the $ZrO_{2}$ layer. AES and TEM show no interdiffusion and reaction that suppressed using the $ZrO_{2}$ film as a buffer layer The width of the memory window in the C-V curves for the MFIS structure decreased with increasing thickness of the $ZrO_{2}$ layer. It is considered that the memory window width of MFIS is not affected by remanent polarization. Leakage current density decreased by about four orders of magnitude after using $ZrO_{2}$ buffer layer. The results show that the $ZrO_{2}$ buffer layers are prospective candidates for applications in MFIS-FET memory devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.171-172
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• 2007

We fabricated the metal-ferroelectric-insulator-semiconductor filed-effect transistors (MFIS-FETs) using the $(Bi,La)_4Ti_3O_{12}\;and\;LaZrO_x$ thin films. The $LaZrO_x$ thin film had a equivalent oxide thickness (EOT) value of 8.7 nm. From the capacitance-voltage (C-V) measurements for an Au/$(Bi,La)_4Ti_3O_{12}/LaZrO_x$/Si MFIS capacitor, a hysteric shift with a clockwise direction was observed and the memory window width was about 1.4 V for the bias voltage sweeping of ${\pm}9V$. From drain current-gate voltage $(I_D-V_G)$ characteristics of the fabricated Fe-FETs, the obtained threshold voltage shift (memory window) was about 1 V due to ferroelectric nature of BLT film. The drain current-drain voltage $(I_D-V_D)$ characteristics of the fabricated Fe-FETs showed typical n-channel FETs current-voltage characteristics.