• Journal of Internet Computing and Services
• /
• v.23 no.3
• /
• pp.57-65
• /
• 2022

International attempts to smuggle narcotics and explosives using ship or aircraft cargoes are on the rise. With the recent increase in the number of detection cases of narcotics and explosives in Korea, it is important to detect dangerous material (narcotics and explosives) through container searches at ports and airports, which are the main routes. This paper proposes a technique to detect dangerous material in cargo containers using the sampled output signal of ion mobility spectroscopy (IMS). The proposed technique estimates parameters such as a threshold, a window length, and a noise level for ion detection of the target dangerous material by using known materials in the initialization stage. The estimated parameters are used to detect the ions of the dangerous target material inside the containers. The proposed technique can be applied when the peak value of the IMS signal and the ion mobility are varying due to container environments.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.11a
• /
• pp.186-189
• /
• 2002

The MFIS capacitors were fabricated using a metalorganic decomposition method. Thin layers of $CeO_2$ were deposited as a buffer layer on Si substrate and BLT thin films were used as a ferroelectric layer. The electrical and structural properties of the MFIS structure were investigated. X-ray diffraction was used to determine the phase of the BLT thin films and the quality of the $CeO_2$ layer. The morphology of films and the interface structures of the BLT and the $CeO_2$ layers were investigated by scanning electron microscopy. The width of the memory window in the C-V curves for the MFIS structure is 4.78 V. The experimental results show that the BLT-based MFIS structure is suitable for non-volatile memory FETs with large memory window.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.05c
• /
• pp.186-189
• /
• 2003

The MFIS capacitors were fabricated using a metalorganic decomposition method. Thin layers of $ZrO_2$ and $CeO_2$ were deposited as a buffer layer on Si substrate and BLT thin films were used as a ferroelectric layer. The electrical and structural properties of the MFIS structure were investigated. X -ray diffraction was used to determine the phase of the BLT thin films and the quality of the $ZrO_2$ and $CeO_2$ layer. AES show no interdiffusion and the formation of amorphous $SiO_2$ layer is suppressed by using the $ZrO_2$ and $CeO_2$ film as buffer layer between the BLT film and Si substrate. The width of the memory window in the C-V curves for the $BLT/ZrO_2/Si$ and $BLT/CeO_2/Si$ structure is 2.94 V and 1.3V, respectively. The experimental results show that the BLT-based MFIS structure is suitable for non-volatile memory FETs with large memory window.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.11a
• /
• pp.23-26
• /
• 2003

The BLT thin film and MgO buffer layer were fabricated using a metalorganic decomposition method and the DC sputtering technique. The MgO thin film was deposited as a buffer layer on $SiO_2/Si$ and BLT thin films were used as a ferroelectric layer. The electrical of the MFIS structure were investigated by varying the MgO layer thickness. TEM showsno interdiffusion and reaction that suppressed by using the MgO film as abuffer layer. The width of the memory window in the C-Y curves for the MFIS structure decreased with increasing thickness of the MgO layer Leakage current density decreased by about three orders of magnitude after using MgO buffer layer. The results show that the BLT and MgO-based MFIS structure is suitable for non-volatile memory FETs with large memory window.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.22 no.11
• /
• pp.999-1003
• /
• 2009

In this paper, CdS thin films well-known to window layer for solar cell were fabricated by means of vacuum evaporation method treated with different substrate heating. During film fabrication the substrates were heated at 50, 75 and $100^{\circ}C$, respectively. The thin films were then annealed at $200^{\circ}C$ in atmosphere, and the electrical and optical properties were investigated. By annealing, the hexagonal structure of films was changed into cubic structure. Their transmissivity was also increased and moved to longer wave band. It was shown that the film fabricated with the substrate heat-treated at $50^{\circ}C$ had the lowest resistivity.

• KIEAE Journal
• /
• v.4 no.3
• /
• pp.79-85
• /
• 2004

There is something valuable in Korean traditional architecture that does not change even after more than a number of years. Each design element of traditional houses has its own role to embody natural, healthy, and environment-friendly architectural planning. With traditional already-built examples located in the northern area of Gyeongbuk province, this study attempts to untangle some of the daylighting control issues in opening design. By looking at more than just photometric materials, at some threshold level, the whole of daylighting control characteristics of their openings is being surveyed from the viewpoint of geometric relationship between their roof structures and windows. As a glazing material, in addition, Korean traditional window covering paper, Changhoji, is evaluated for its transmittal performance under artificial and real skies as well.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2010.06a
• /
• pp.178-178
• /
• 2010

칼코게나이드계 재료를 사용한 비냉각 적외선 센서의 윈도우를 제작하여 그 특성을 조사하였다. 조성을 EDS로 분석한 결과 Ge-Se-Sb로 구성되어 있음을 확인하였다. 두께 2mm인 윈도우 모재를 양면 경연마한 후 코팅 설계치로 8-12um 영역에서 평균 투과도가 95.6%로 나타났다. 이온빔보조증착장치를 이용하여 Ge, ZnS, $YF_3$ 소스로 코팅한 결과 투과도는 동일파장영역에서 약 94%로 나타났다. 칼코게나이드 원재료의 투과도는 약 69%로써 12um 영역 부근에서 강한흡수를 보였다. 코팅면의 거칠기 값(Ra)은 약 1.5 nm로써 매우 매끄러운 면을 얻었으며, 단면 SEM 측정 결과 설계치와 유사한 박막 두께를 얻었다.

• Nuclear Engineering and Technology
• /
• v.48 no.3
• /
• pp.795-798
• /
• 2016

Transmission X-ray tubes based on carbon nanotube have attracted significant attention recently. In most of these tubes, tungsten is used as the target material. In this article, the well-known simulator Geant4 was used to obtain some of the tungsten target parameters. The optimal thickness for maximum production of usable X-rays when the target is exposed to electron beams of different energies was obtained. The linear variation of optimal thickness of the target for different electron energies was also obtained. The data obtained in this study can be used to design X-ray tubes. A beryllium window was considered for the X-ray tube. The X-ray energy spectra at the moment of production and after passing through the target and window for different electron energies in the 30-110 keV range were also obtained. The results obtained show that with a specific thickness, the target material itself can act as filter, which enables generation of X-rays with a limited energy.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.22 no.9
• /
• pp.792-797
• /
• 2009

In this paper, CdS thin films for the use of window layer in solar cell were fabricated by vacuum evaporation method to improve the reproducibility, The electrical and optical properties of thin films with the variations of substrates temperature and the variations of the film thickness were investigated. As increasing the substrates temperature the resistivities of films were increased. The samples transmissivity were shown over 70% when the wavelength were above 500 nm. In the films with 280 nm thickness, its transmissivity were reached 100%. The resistivities of the samples were decreased as increasing its thickness.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.11a
• /
• pp.85-86
• /
• 2007

A poly(vinylidene fluoride-trifluoroethyene) (P(VDF-TrFE)) copolymer thin film having ${\beta}$ phase was prepared by sol-gel method. The electrical properties of the film were studied to evaluate the possibility for appling to a ferroelectric random access memory. In order to characterize its electrical properties, we produced a MFS (metal-ferroelectric-semiconductor) structure by evaporation of Au electrodes. The C-V (capacitance-voltage) measurement revealed that the Au/P(VDF-TrFE)/Si structure with a 4 wt% film had a memory window width of about 0.5V for a bias voltage sweep of 1V.