• Transactions on Electrical and Electronic Materials
• /
• 제13권4호
• /
• pp.192-195
• /
• 2012

We reported diborane ($B_2H_6$) doped wide bandgap hydrogenated amorphous silicon oxide (p-type a-SiOx:H) films prepared by using silane ($SiH_4$) hydrogen ($H_2$) and nitrous oxide ($N_2O$) in a radio frequency (RF) plasma enhanced chemical vapor deposition (PECVD) system. We improved the $E_{opt}$ and conductivity of p-type a-SiOx:H films with various $N_2O$ and $B_2H_6$ ratios and applied those films in regards to the a-Si thin film solar cells. For the single layer p-type a-SiOx:H films, we achieved an optical band gap energy ($E_{opt}$) of 1.91 and 1.99 eV, electrical conductivity of approximately $10^{-7}$ S/cm and activation energy ($E_a$) of 0.57 to 0.52 eV with various $N_2O$ and $B_2H_6$ ratios. We applied those films for the a-Si thin film solar cell and the current-voltage characteristics are as given as: $V_{oc}$ = 853 and 842 mV, $J_{sc}$ = 13.87 and 15.13 $mA/cm^2$. FF = 0.645 and 0.656 and ${\eta}$ = 7.54 and 8.36% with $B_2H_6$ ratios of 0.5 and 1% respectively.

• 한국의상디자인학회지
• /
• 제15권4호
• /
• pp.29-45
• /
• 2013

The purpose of this study is to provide base line data required to establish a viable knitwear marketing strategy targeting young people by comparing and analyzing preference and buying behavior of customers in their twenties. A survey was conducted in 2009 and 2013 on people in their 20's male and female living in Busan. The total of 362 people participated in the survey and the results are as follows: Firstly, the seeking factors for knitwear were utilization factor, functionality factor, care for clothing factor, economics factor and vogue factor. Secondly, a differentiated marketing strategy targeting 20-something customers needs to be established as there was a steep rise in the number of customers purchasing clothes on online shopping malls using smart phone devices according to the survey.'Low-price, broad-line strategy'is also required as those surveyed preferred stores offering a wide choice of designs with reasonable price. Considering the survey results that a growing number of people tended to buy a variety of knitwear items regardless of the seasons, knitwear production needs to be diversified in terms of designs and materials. Thirdly, the survey revealed that pastel-colored knitwear was preferred for spring/summer season whereas knitwear with achromatic colors was voted the most-preferred one during the autumn and winter season. In terms of knitwear shapes, the gap between genders continues to narrow and tendency sensitive to fashion trend became more apparent reflecting the change of the times.

• Journal of Radiation Protection and Research
• /
• 제41권2호
• /
• pp.81-86
• /
• 2016

Background: For positron emission tomography (PET) application, cadmium zinc telluride (CZT) has been investigated by several institutes to replace detectors from a conventional system using photomultipliers or Silicon-photomultipliers (SiPMs). The spatial and energy resolution in using CZT can be superior to current scintillator-based state-of-the-art PET detectors. CZT has been under development for several years at the Korea Atomic Energy Research Institute (KAERI) to provide a high performance gamma ray detection, which needs a single crystallinity, a good uniformity, a high stopping power, and a wide band gap. Materials and Methods: Before applying our own grown CZT detectors in the prototype PET system, we investigated preliminary research with a developed discrete type data acquisition (DAQ) system for coincident events at 128 anode pixels and two common cathodes of two CZT detectors from Redlen. Each detector has a $19.4{\times}19.4{\times}6mm^3$ volume size with a 2.2 mm anode pixel pitch. Discrete amplifiers consist of a preamplifier with a gain of $8mV{\cdot}fC^{-1}$ and noise of 55 equivalent noise charge (ENC), a $CR-RC^4$ shaping amplifier with a $5{\mu}s$ peak time, and an analog-to-digital converter (ADC) driver. The DAQ system has 65 mega-sample per second flash ADC, a self and external trigger, and a USB 3.0 interface. Results and Discussion: Characteristics such as the current-to-voltage curve, energy resolution, and electron mobility life-time products for CZT detectors are investigated. In addition, preliminary results of gamma ray imaging using 511 keV of a $^{22}Na$ gamma ray source were obtained. Conclusion: In this study, the DAQ system with a CZT radiation sensor was successfully developed and a PET image was acquired by two sets of the developed DAQ system.

• Transactions on Electrical and Electronic Materials
• /
• 제11권3호
• /
• pp.134-137
• /
• 2010

We have proposed a transflective liquid crystal display (LCD) driven by the fringe field using a liquid crystal (LC) with a negative dielectric anisotropy. The device used different twist angles of the liquid crystals (LC) in the transmissive (T) and the reflective (R) regions when voltage is applied. With the optimization of the pixel electrode width and the distance between them, the LC directors in the R- and T-regions can be rotated by about $22.5^{\circ}$ and $45^{\circ}$ on an average, respectively. As a result, a high image quality transflective LCD with a single gap, a single gamma, and a wide viewing angle characteristics in both the R- and T- regions can be realized.

• Asian Pacific Journal of Cancer Prevention
• /
• 제14권10호
• /
• pp.5817-5823
• /
• 2013

Background: It is important to understand the perceptions of oncologists to understand the comprehensive picture of clinical presentation of breast cancer. In the absence of clear evidence, clinical practice involving patients of breast cancer in India should provide insights into stages of breast cancer with which women present to their clinics and mode of screening of breast cancer prevalent in Andhra Pradesh. Materials and Methods: A qualitative study was conducted to understand the perceptions of oncologists regarding clinical presentation of breast cancer, stages at which women present to clinics, and mode of screening of breast cancer prevalent in Andhra Pradesh. In-depth interviews (IDI) were conducted with ten practising oncologists from various public and private cancer hospitals in Hyderabad city to understand their perspectives on breast cancer and screening. The data were triangulated to draw inferences suitable for the current public Health scenario. Results: Late presentation was indicated as the most important cause of decreased survival among women. Most women present at Stage 3 and 4 when there is no opportunity for surgical intervention. The results indicate that there is a huge gap in awareness about breast cancer, especially in rural areas and among poor socioeconomic groups. Even despite knowledge, most women delay in reporting due to reasons like fear, embarrassment, cost, ignorance, negligence, and easy going attitude. Conclusions: It is important to improve awareness about breast cancer and screening methods for promoting early screening. The study inferred that it would be beneficial to establish cancer registries in rural areas. Also, the policymakers need to make key decisions which among three methods (breast self examination (BSE), clinical breast examination and mammography) can best be used as a screening tool and how to successfully implement population wide screening program to prevent mortality and morbidity from breast cancer in India.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2011년도 제40회 동계학술대회 초록집
• /
• pp.106-106
• /
• 2011

Recently, zinc oxide (ZnO) thin films have attracted great attention as a promising candidate for various electronic applications such as transparent electrodes, thin film transistors, and optoelectronic devices. ZnO thin films have a wide band gap energy of 3.37 eV and transparency in visible region. Moreover, ZnO thin films can be deposited in a poly-crystalline form even at room temperature, extending the choice of substrates including even plastics. Therefore, it is possible to realize thin film transistors by using ZnO thin films as the active channel layer. In this work, we investigated influence of oxygen partial pressure on ZnO thin films and fabricated ZnO-based thin film transistors. ZnO thin films were deposited on glass substrates by using a pulsed laser deposition technique in various oxygen partial pressures from 20 to 100 mTorr at room temperature. X-ray diffraction (XRD), transmission line method (TLM), and UV-Vis spectroscopy were employed to study the structural, electrical, and optical properties of the ZnO thin films. As a result, 80 mTorr was optimal condition for active layer of thin film transistors, since the active layer of thin film transistors needs high resistivity to achieve low off-current and high on-off ratio. The fabricated ZnO-based thin film transistors operated in the enhancement mode with high field effect mobility and low threshold voltage.

• 대한조선학회 특별논문집
• /
• 대한조선학회 2007년도 특별논문집
• /
• pp.118-127
• /
• 2007

SAW(Submerged Arc Welding) process is generally applied to a wide range of welding area in the fabrication of steel structure. This process has a good characteristic properties such as the high quality of welds and the high deposition rates, but in case of welding on a thick steel plate, it also has higher cold crack susceptibility than that of a thin steel plate. The purpose of this research is to find the main factor of crack generation and clarify the countermeasure for crack prevention, and then establish the optimum welding condition in a heavy thick steel plate. The results of this study are as follows, 1. The cause of crack generation is found the diffusible hydrogen penetrated into weld metal by decomposition of the remained moisture in SAW flux during welding. 2. For the removal of diffusible hydrogen, the raw materials of SAW flux are to be dehydrated at the high temperature in the initial manufacturing stage. 3. Mechanical properties of weld metal welded with the dehydrated SAW flux were evaluated very excellent, furthermore the weld metal has been proved to have low diffusible hydrogen content with 3.1ml /100g. 4. The weldability and quality welded with thick steel plates were improved by establishing the new optimum welding condition.

• Transactions on Electrical and Electronic Materials
• /
• 제5권1호
• /
• pp.1-6
• /
• 2004

Zinc sulfide is a semiconductor with wide band gap and high refractive index and hence promising material to be used as ARC on commercial silicon solar cells. Uniform deposition of zinc sulfide (ZnS) by using chemical bath deposition (CBD) method over a large area of silicon surface is an emerging field of research because ZnS film can be used as a low cost antireflection coating (ARC). The main problem of the CBD bath process is the huge amount of precipitation that occurs during heterogeneous reaction leading to hamper the rate of deposition as well as uniformity and chemical stoichiometry of deposited film. Molar concentration of thiorea plays an important role in varying the percentage of reflectance and refractive index of as-deposited CBD ZnS film. Desirable rate of film deposition (19.6 ${\AA}$ / min), film uniformity (Std. dev. < 1.8), high value of refractive index (2.35), low reflectance (0.655) have been achieved with proper optimization of ZnS bath. Decrease in refractive index of CBD ZnS film due to high temperature treatment in air ambiance has been pointed out in this paper. Solar cells of conversion efficiency 13.8 ％ have been successfully achieved with a large area (103 mm ${\times}$ 103 mm) mono-crystalline silicon wafers by using CBD ZnS antireflection coating in this modified approach.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2009년도 제38회 동계학술대회 초록집
• /
• pp.124-124
• /
• 2010

Much interest has been focused on InGaN-based materials and their quantum structures due to their optoelectronics applications such as light emitting diode (LED) and photovoltaic devices, because of its high thermal conductivity, high optical efficiency, and direct wide band gap, in spite of their high density of threading dislocations. Build-in internal field-induced quantum-confined Stark effect in InGaN/GaN quantum well LED structures results in a spatial separation of electrons and holes, which leads to a reduction of radiative recombination rate. Therefore, many growth techniques have been developed by utilizing lateral over-growth mode or by inserting additional layers such as patterned layer and superlattices for reducing threading dislocations and internal fields. In this work, we investigated various characteristics of InGaN multiple quantum wells (MQWs) LED structures grown on selectively wet-etched porous (SWEP) GaN template layer and compared with those grown on non-porous GaN template layer over c-plane sapphire substrates. From the surface morphology measured by atomic force microscope, high resolution X-ray diffraction analysis, low temperature photoluminescence (PL) and PL excitation measurements, good structural and optical properties were observed on both LED structures. However, InGaN MQWs LED structures grown on SWEP GaN template layer show relatively low In composition, thin well width, and blue shift of PL spectra on MQW emission. These results were explained by rough surface of template layer, reduction of residual compressive stress, and less piezoelectric field on MQWs by utilizing SWEP GaN template layer. Better electrical properties were also observed for InGaN MQWs on SWEP GaN template layer, specially at reverse operating condition for I-V measurements.

• Current Photovoltaic Research
• /
• 제7권1호
• /
• pp.9-14
• /
• 2019

Carrier selective solar cell structure has allured curiosity of photovoltaic researchers due to the use of wide band gap transition metal oxide (TMO). Distinctive p/n-type character, broad range of work functions (2 to 7 eV) and risk free fabrication of TMO has evolved new concept of heterojunction intrinsic thin layer (HIT) solar cell employing carrier selective layers such as $MoO_x$, $WO_x$, $V_2O_5$ and $TiO_2$ replacing the doped a-Si layers on either front side or back side. The p/n-doped hydrogenated amorphous silicon (a-Si:H) layers are deposited by Plasma-Enhanced Chemical Vapor Deposition (PECVD), which includes the flammable and toxic boron/phosphorous gas precursors. Due to this, carrier selective TMO is gaining popularity as analternative risk-free material in place of conventional a-Si:H. In this work hole selective materials such as $MoO_x$, $WO_x$ and $V_2O_5$has been investigated. Recently $MoO_x$, $WO_x$ & $V_2O_5$ hetero-structures showed conversion efficiency of 22.5%, 12.6% & 15.7% respectively at temperature below $200^{\circ}C$. In this work a concise review on few important aspects of the hole selective material solar cell such as historical developments, device structure, fabrication, factors effecting cell performance and dependency on temperature has been reported.