• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.8
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• pp.508-513
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• 2017

Ultraviolet (UV) photodetectors are used in various industries and fields of research, including optical communication, flame sensing, missile plume detection, astronomical studies, biological sensors, and environmental research. However, general UV detectors that employ Schottky junction diodes and p-n junctions have high fabrication cost and low quantum efficiency. In this study, we investigated the characteristics of materials used to manufacture UV photodetectors in a low-cost solution process that requires easy fabrication of flexible substrates. We fabricated p-type NiO and n-type ZnO substrates with wide band gap by the sol-gel method and compared the characteristics of substrates prepared under different spin-coating and heat-treatment conditions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.108-109
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• 2006

ZnO semiconductor has a wide band gap of 3.37 eV and a large exciton binding energy of 60 meV, and displays excellent sensing and optical properties. In particular, ZnO based 1D nanowires and nanorods have received intensive attention because of their potential applications in various fields. We grew ZnO buffer layers prior to the growth of ZnO nanorods for the fabrication of the vertically well-aligned ZnO nanorods without any catalysts. The ZnO nanorods were grown on Si (111) substrates by vertical MOCVD. The ZnO buffer layers were grown with various thicknesses at $400^{\circ}C$ and their effect on the formation of ZnO nanorods at $300^{\circ}C$ was evaluated by FESEM, XRD, and PL. The synthesized ZnO nanorods on the ZnO film show a high quality, a large-scale uniformity, and a vertical alignment along the [0001]ZnO compared to those on the Si substrates showing the randomly inclined ZnO nanorods. For sample using ZnO buffer layer, 1D ZnO nanorods with diameters of 150-200 nm were successively fabricated at very low growth temperature, while for sample without ZnO buffer the ZnO films with rough surface were grown.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.6
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• pp.480-485
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• 2011

ZnO is an n-type semiconductor with a wide band gap near 3.37 eV. It was known that ZnO films with a resistivity of the order of $10^{-4}\;{\Omega}cm$ is not easy to obtain. 1, 3, and 5wt% Si element were added into ZnO in ordre to improve the electrical and optical characteristics. The Si-doped ZnO (SZO) was grown on a glass substrate by radio frequency (RF) magnetron sputtering at the temperature range from 100 to $500^{\circ}C$. X-ray diffraction (XRD) patterns of SZO film showed preferable crystal orientation of (002) plane. It was confirmed that the lowest resistivity of the SZO films was $2.44{\times}10^{-3}{\Omega}cm$ and SZO films were significantly influenced by the working temperature. The average transmittance of the films was over 80% in the visible ranges.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.306.1-306.1
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• 2016

ZnO semiconductor material has been widely utilized in various applications in semiconductor device technology owing to its unique electrical and optical features. It is a promising as solar cell material, because of its low cost, n-type conductivity and wide direct band gap. In this work ZnO/Si heterojunctions were fabricated by using pulsed laser deposition. Vacuum chamber was evacuated to a base pressure of approximately $2{\times}10^{-6}Torr$. ZnO thin films were grown on p-Si (100) substrate at oxygen partial pressure from 5mTorr to 40mTorr. Growth temperature of ZnO thin films was set to 773K. A pulsed (10 Hz) Nd:YAG laser operating at a wavelength of 266 nm was used to produce a plasma plume from an ablated a ZnO target, whose density of laser energy was $10J/cm^2$. Thickness of all the thin films of ZnO was about 300nm. The optical property was characterized by photoluminescence and crystallinity of ZnO was analyzed by X-ray diffraction. For fabrication ZnO/Si heterojunction diodes, indium metal and Al grid patterns were deposited on back and front side of the solar cells by using thermal evaporator, respectively. Finally, current-voltage characteristics of the ZnO/Si structure were studied by using Keithly 2600. Under Air Mass 1.5 Global solar simulator with an irradiation intensity of $100mW/cm^2$, the electrical properties of ZnO/Si heterojunction photovoltaic devices were analyzed.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.21.2-21.2
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• 2011

$Fe_3O_4$ having half metallic property is one of the efficient spin filtering materials which are widely used in spintronic research field and ZnO is wide band gap semiconductor which can be used by tunnel barrier or semiconductor channel in spin MOSFET. We investigated the magnetic and the electric properties of $Fe_3O_4$/ZnO multilayer fabricated on c-$Al_2O_3$ substrate by pulsed laser deposition (PLD). For multilayer films, PLD was performed at variable temperatures such as $200{\sim}750^{\circ}C$ and at target distance from 40 to 80 mm, KrF eximer laser of 1.5 $J/cm^2$ and a reputation rate of 2Hz. $Fe_3O_4$/ZnO multilayers were deposited at $4{\times}10^{-6}$ Torr. After fabricating $Fe_3O_4$/ZnO multilayers, $Fe_3O_4$/ZnO multilayers were treated by RTA(Rapid Thermal Annealing) at various temperature to change magnetic phase. The magnetism of the multilayer is changed by thickness of the ZnO tunnel barrier. Magnetic phase of FexOy showed a very small magnetism due to $Fe_2O_3$ ${\alpha}$-phase, but large magnetism from $Fe_3O_4$ or $Fe_2O_3$ ${\gamma}$-phase was observed. In the present study, effect of the ZnO thickness on the MR (magnetoresistance) ratio was investigated in detail.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.199-199
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• 2011

Recently, Thin film transistors (TFTs) with amorphous oxide semiconductors (AOSs) can offer an important aspect for next generation displays with high mobility. Several oxide semiconductor such as ZnO, $SnO_2$ and InGaZnO have been extensively researched. Especially, as a well-known binary metal oxide, tin oxide ($SnO_2$), usually acts as n-type semiconductor with a wide band gap of 3.6eV. Over the past several decades intensive research activities have been conducted on $SnO_2$ in the bulk, thin film and nanostructure forms due to its interesting electrical properties making it a promising material for applications in solar cells, flat panel displays, and light emitting devices. But, its application to the active channel of TFTs have been limited due to the difficulties in controlling the electron density and n-type of operation with depletion mode. In this study, we fabricated staggered bottom-gate structure $SnO_2$-TFTs and patterned channel layer used a shadow mask. Then we compare to the performance intrinsic $SnO_2$-TFTs and doping hafnium $SnO_2$-TFTs. As a result, we suggest that can be control the defect formation of $SnO_2$-TFTs by doping hafnium. The hafnium element into the $SnO_2$ thin-films maybe acts to control the carrier concentration by suppressing carrier generation via oxygen vacancy formation. Furthermore, it can be also control the mobility. And bias stability of $SnO_2$-TFTs is improvement using doping hafnium. Enhancement of device stability was attributed to the reduced defect in channel layer or interface. In order to verify this effect, we employed to measure activation energy that can be explained by the thermal activation process of the subthreshold drain current.

• The Transactions of the Korean Institute of Power Electronics
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• v.26 no.5
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• pp.325-333
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• 2021

A 3 kW grid-tied PV inverter with Gallium nitride high-electron mobility transistor (GaN HEMT) for domestic commercialization was developed using boost converter and full-bridge inverter with LCL filter topology. Recently, many GaN HEMTs are manufactured as surface mount packages because of their lower parasitic inductance characteristic than standard TO (transistor outline) packages. A surface mount packaged GaN HEMT releases heat through either top or bottom cooling method. IGOT60R070D1 is selected as a key power semiconductor because it has a top cooling method and fairly low thermal resistances from junction to ambient. Its characteristics allow the design of a 3 kW inverter without forced convection, thereby providing great advantages in terms of easy maintenance and high reliability. 1EDF5673K is selected as a gate driver because its driving current and negative voltage output characteristics are highly optimized for IGOT60R070D1. An LCL filter with passive damping resistor is applied to attenuate the switching frequency harmonics to the grid-tied operation. The designed LCL filter parameters are validated with PSIM simulation. A prototype of 3 kW PV inverter with GaN HEMT is constructed to verify the performance of the power conversion system. It achieved high power density of 614 W/L and peak power efficiency of 99% for the boost converter and inverter.

• Journal of radiological science and technology
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• v.43 no.6
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• pp.481-487
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• 2020

Radiation measurement technology has steadily improved and its usage is expanding in various industries such as nuclear medicine, security search, satellite, nondestructive testing, environmental industries and the domain of nuclear power plants (NPPs). Especially, the simultaneous measurements of gamma rays and neutrons can be even more critical for nuclear safety management of spent nuclear fuel and monitoring of the nuclear material. A semiconductor detector comprising cadmium, zinc, and tellurium (CZT) enables to detect gamma-rays due to the significant atomic weight of the elements via immediate neutron and gamma-ray detection. Semiconductor sensors might be used for nuclear safety management by monitoring nuclear materials and spent nuclear fuel with high spatial resolution as well as providing real-time measurements. We aim to introduce a portable nuclide-analysis device that enables the simultaneous measurements of neutrons and gamma rays using a CZT sensor. The detector has a high density and wide energy band gap, and thus exhibits highly sensitive physical characteristics and characteristics are required for performing neutron and gamma-ray detection. Portable nuclide-analysis device is used on NPP-decommissioning sites or the purpose of nuclear nonproliferation, it will rapidly detect the nuclear material and provide radioactive-material information. Eventually, portable nuclide-analysis device can reduce measurement time and economic costs by providing a basis for rational decision making.

• Journal of Power Electronics
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• v.16 no.3
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• pp.1226-1235
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• 2016

For wearable health monitoring systems, a fundamental problem is the limited space for storing energy, which can be translated into a short operational life. In this paper, a highly efficient active voltage doubling rectifier with a wide input range for micro-piezoelectric energy harvesting systems is proposed. To obtain a higher output voltage, the Dickson charge pump topology is chosen in this design. By replacing the passive diodes with unbalanced-biased comparator-controlled active counterparts, the proposed rectifier minimizes the voltage losses along the conduction path and solves the reverse leakage problem caused by conventional comparator-controlled active diodes. To improve the rectifier input voltage sensitivity and decrease the minimum operational input voltage, two low power common-gate comparators are introduced in the proposed design. To keep the comparator from oscillating, a positive feedback loop formed by the capacitor C is added to it. Based on the SMIC 0.18-μm standard CMOS process, the proposed rectifier is simulated and implemented. The area of the whole chip is 0.91×0.97 mm², while the rectifier core occupies only 13% of this area. The measured results show that the proposed rectifier can operate properly with input amplitudes ranging from 0.2 to 1.0V and with frequencies ranging from 20 to 3000 Hz. The proposed rectifier can achieve a 92.5% power conversion efficiency (PCE) with input amplitudes equal to 0.6 V at 200 Hz. The voltage conversion efficiency (VCE) is around 93% for input amplitudes greater than 0.3 V and load resistances larger than 20kΩ.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.27 no.6
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• pp.275-281
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• 2017

AlN is a promising material for wide band gap and high-frequency electronics device due to its wide bandgap and high thermal conductivity. AlN has advantages as materials for power semiconductors with a larger breakdown field, and a smaller specific on-resistance at high voltage. The growth of a p-type AlN epilayer with high conductivity is important for a manufacturing an AlN-based applications. In this paper, Mg doped AlN epilayers were grown by a mixed-source HVPE. Al and Mg mixture were used as source materials for the growth of Mg-doped AlN epilayers. Mg concentration in the AlN was controlled by modulating the quantity of Mg source in the mixed-source. Surface morphology and crystalline structure of AlN epilayers with different Mg concentrations were characterized by FE-SEM and HR-XRD. XPS spectra of the Mg-doped AlN epilayers demonstrated that Mg was doped successfully into the AlN epilayer by the mixed-source HVPE.