• Journal of IKEEE
• /
• v.27 no.1
• /
• pp.19-24
• /
• 2023

Since silicon having a band gap energy of about 1.12 eV are limited to a maximum operating temperature of less than 250 ℃, the sample with MIS structure based on the SiC substrate of wide-band gap energy was manufactured and the hydrogen response characteristics at high temperatures were investigated. The dielectric layer applied here is a tantalum oxide layer that is highly permeable to hydrogen gas and shows stability at high temperatures. It was formed by RTO at a temperature of 900 ℃ with tantalum. The thickness, depth profiles, and leakage current of the tantalum oxide layer were analyzed through TEM, SIMS, and leakage current characteristics. For the hydrogen gas response characteristics, the capacitance change characteristics were investigated in the temperature range from room temperature to 400 ℃ for hydrogen gas concentrations from 0 to 2,000 ppm. As a result, it was confirmed that the sample exhibited excellent sensitivity and a response time of about 60 seconds.

• Journal of the Semiconductor & Display Technology
• /
• v.21 no.2
• /
• pp.101-106
• /
• 2022

In this paper, WBG semiconductor such as SiC and GaN were applied as power switches for LCL circuit that can be applied to satellite power systems and the test results of the LCL circuit are reported. P-channel MOSFET and N-channel MOSFET, which were generally used in the conventional LCL circuit, were applied together to expand the utility of the test results. The design and stability evaluation were performed using a Micro Cap circuit simulation program. For the test circuit, a module using each switch was manufactured, and a total of 5 modules were manufactured and the steady state and transient state characteristics were compared. From the experimental results, the LCL circuit for power supply of the satellite power system constructed in this paper satisfied the constant current and constant voltage conditions under various operating conditions. The P-channel MOSFET showed the lowest efficiency characteristics, and the three N-channel switches of Si, SiC and GaN showed relatively high efficiency characteristics of up to 99.05% or more. In conclusion, it was verified that the on-resistor of the switch had a direct effect on the efficiency and loss characteristics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.11a
• /
• pp.245-245
• /
• 2009

l-D nanostructured materials have much more attention because of their outstanding properties and wide applicability in device fabrication. Copper oxide(CuO) has been realized as a p-type metal oxide semiconductor with narrow band gap of 1.2 -1.5eV. Copper oxide nanostructures can be synthesized by various growth method such as oxidation reaction, thermal evaporation thermal decomposition, sol-gel. and Mostly CuO nanowire prepared on the Cu substrate such as Copper foil, grid, plate. In this study, CuO NWs were grown by thermal oxidation (at various temperatures in air (1 atm)) of Cu metal deposited on CuO (20nm)/$SiO_2$(250nm)/Si. A 20nm-thick CuO layer was used as an adhesion layer between Cu metal and $SiO_2$

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.23 no.9
• /
• pp.685-690
• /
• 2010

ZnO with the wide band gap near 3.37 eV is typically an n-type semiconductor in which deviation from stoichiometry is electrically active. It was known that the films with a resistivity of the order of $10^{-4}{\Omega}cm$ is not easy to obtain. In order to improve electrical characteristic of ZnO, we added 1, 3, 5 wt% Ga element in ZnO. The Ga-doped ZnO (GZO) was grown on a glass substrate by radio frequency (RF) magnetron sputtering at the temperature range from 100 to $500^{\circ}C$. X-ray diffraction (XRD) patterns of GZO films showed preferable crystal orientation of (002) plane. The lowest resistivity of the GZO films was $8.9{\times}10^{-4}{\Omega}cm$. GZO films significantly influenced by the working temperature. The average transmittance of the films was over 80% in the visible ranges.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.24 no.5
• /
• pp.355-358
• /
• 2011

As a II-IV compound semiconductor, ZnO has a wide band gap of 3.37 eV with transparent properties. Due to this transparent properties, ZnO materials can be also employed as the transparent conducting electrode materials. Recently, rapid progress has been made in the field of DSSC (dye sensitized solar cell)area. Therefore, strong demands have been required for the transparent electrodes with low temperature processing and cheap cost. In this paper, we will prepare ZnO thick films on the PET substrates for the electrode applications. We will investigate the structural and microstructure properties through the XRD, and SEM analysis, respectively. Also, we will study the electrical of specimens to apply the conducting electrode.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.25 no.4
• /
• pp.290-293
• /
• 2012

This article introduces the characterization of spin coated ZnO transparent conducting oxide on the flexible substrates. As a II-IV compound semiconductor, ZnO has a wide band gap of 3.37 eV with transparent properties. Due to this transparent properties, ZnO materials can be also employed as the transparent conducting electrode materials. Therefore, strong demands have been required for the transparent electrodes with low temperature processing and cheap cost. So, We will investigate the electrical property and optical transmittance of ZnO transparent conducting oxide through the 4-point probe resistivity meter, and ultraviolet-vis spectrometer Lamda 35, respectively.

• The Transactions of the Korean Institute of Power Electronics
• /
• v.22 no.4
• /
• pp.297-304
• /
• 2017

The purpose of this paper is to analyze losses because of switching devices and the secondary side circuit diodes of 500 W full bridge dc-dc converter by applying gallium nitride (GaN) field-effect transistor (FET), which is one of the wide band gap devices. For the detailed device analysis, we translate the specific resistance relation caused by the GaN FET material property into algebraic expression, and investigate the influence of the GaN FET structure and characteristic on efficiency and system specifications. In addition, we mathematically compare the diode rectifier circuit loss, which is a full bridge dc-dc converter secondary side circuit, with the synchronous rectifier circuit loss using silicon metal-oxide semiconductor (Si MOSFET) or GaN FET, which produce the full bridge dc-dc converter analytical value validity to derive the final efficiency and loss. We also design the heat sink based on the mathematically derived loss value, and suggest the heat sink size by purpose and the heat divergence degree through simulation.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.14 no.6
• /
• pp.697-705
• /
• 2014

A single chip Programmable AC to DC Power Converter, consisting of wide band gap SiC MOSFET and SiC diodes, has been proposed which converts high frequency ac voltage to a conditioned dc output voltage at user defined given power level. The converter has high conversion efficiency because of negligible reverse recovery current in SiC diode and SiC MOSFET. High frequency operation reduces the need of bigger size inductor. Lead inductors are enough to maintain current continuity. A complete electrical analysis, die area estimation and thermal analysis of the converter has been presented. It has been found that settling time and peak overshoot voltage across the device has reduced significantly when SiC devices are used with respect to Si devices. Reduction in peak overshoot also increases the converter efficiency. The total package substrate dimension of the converter circuit is only $5mm{\times}5mm$. Thermal analysis performed in the paper shows that these devices would be very useful for use as miniaturized power converters for load currents of up to 5-7 amp, keeping the package thermal conductivity limitation in mind. The converter is ideal for voltage requirements for sub-5 V level power supplies for high temperatures and space electronics systems.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.06a
• /
• pp.227-227
• /
• 2008

CdS is II-VI semiconductor with a wide band gap of approximately 2.42 eV. CdS is the most popularly employed heterojunction partner to p-CdTe due to its similar chemical properties. The as-deposited films are annealed in Rapid Thermal Annealing (RTA) system in various atmosphere(Air, Vacuum and $N_2$) at $500^{\circ}C$. In this work, X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS) of chemical bath deposited (CBD) CdS films on glass is carried out. In case of the annealed CdS films in $N_2$, grain size was larger than as-annealed films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.06a
• /
• pp.228-228
• /
• 2008

CdS is II-VI semiconductor with a wide band gap of approximately 2.42 eV. CdS is the most popularly employed heterojunction partner to p-CdTe due to its similar chemical properties. In this work, to improvement of the surface properties of the CdS films, PET substrate is treated by high density $O_2$ plasma. CdS films are prepared by chemical bath deposition(CBD) method. In case of the PET substrate with plasma treatment for 2min, the crystalline orientation of CdS films exhibits a strong hexagonal(002). Grain size was increased from 300nm without $O_2$ plasma treatment to 380nm with an $O_2$ plasma treatment.