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http://dx.doi.org/10.4313/JKEM.2010.23.9.685

Effect of Ga Dopants on Electrical and Optical Characteristics of ZnO Thin Films  

Kim, Jun-Sik (Department of Materials Engineering, Chungbuk University)
Jang, Gun-Eik (Department of Materials Engineering, Chungbuk University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.23, no.9, 2010 , pp. 685-690 More about this Journal
Abstract
ZnO with the wide band gap near 3.37 eV is typically an n-type semiconductor in which deviation from stoichiometry is electrically active. It was known that the films with a resistivity of the order of $10^{-4}{\Omega}cm$ is not easy to obtain. In order to improve electrical characteristic of ZnO, we added 1, 3, 5 wt% Ga element in ZnO. The Ga-doped ZnO (GZO) was grown on a glass substrate by radio frequency (RF) magnetron sputtering at the temperature range from 100 to $500^{\circ}C$. X-ray diffraction (XRD) patterns of GZO films showed preferable crystal orientation of (002) plane. The lowest resistivity of the GZO films was $8.9{\times}10^{-4}{\Omega}cm$. GZO films significantly influenced by the working temperature. The average transmittance of the films was over 80% in the visible ranges.
Keywords
GZO; Crystal orientation; Resistivity; Transmittance;
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