• 제목/요약/키워드: Wide Band-gap

검색결과 245건 처리시간 0.035초

AE센서를 이용한 유중 코로나방전점 위치 및 주파수 영역 검출 (Location and Frequency Domain Detection of Corona Discharge Point in Oil Using AE Sensor)

  • 이상우;김성훈;김인식;김기채;박원주;이광식;이동인
    • 한국조명전기설비학회:학술대회논문집
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    • 한국조명전기설비학회 1999년도 학술대회논문집-국제 전기방전 및 플라즈마 심포지엄 Proceedings of 1999 KIIEE Annual Conference-International Symposium of Electrical Discharge and Plasma
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    • pp.127-131
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    • 1999
  • In this paper, using a wide-band AE sensor with the frequency range from 100[kHz], the frequency spectra of AE signals generated from the corona discharges of the needle-plane electrode was analyzed to determine the proper ultrasonic sensor. We also examined the relationship between the magnitude of corona discharge and the magnitude of AE signals in peak-to-peak value under the application of 60[Hz] AC high-voltage in oil. From these results, the main frequency spectra of AE signals emitted from the corona discharges of the needle-plane gap were found to be 130[kHz] by the fast fourier transform. The magnitude of AE signals was proportional to the magnitude of corona discharge and discharge current pulse with increasing the applied voltages. Also the detection of corona discharge point location by AE signals was found to be possible by using two sensors.

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4H-SiC Recessed-gate MESFET의 DC특성 모델링 연구 (Study on DC Analysis of 4H-SiC Recessed-Gate MESFETs using modeling tools)

  • 박승욱;강수창;박재영;신무환
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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    • pp.238-242
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    • 2001
  • In this paper, the current-voltage characteristics of a 4H-SiC MESFET is simulated by using the Atlas Simulation tool. we are able to use the simulator to extract more information about the new material 4H-SiC, including the mobility, velocity-field Curve and the Schottky barrier height. We have enabled and used the new simulator to investigate breakdown Voltage and thus predict operation limitiations of 4H-SiC device. Modeling results indicate that the Breakdown Voltage is 197 V and Current is 100 mA

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Low-voltage cathodoluminescent Characteristics of ZnGa$_2$O$_4$ : Mn phosphors

  • 조성희;유재수;이종덕;이중환
    • 한국표면공학회지
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    • 제30권1호
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    • pp.57-62
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    • 1997
  • Green-emitting $ZnGa_2O_4$ : Mn phosphors were synthesized by a thermal method and their low-voltage cathodoluminescent characteristics were examined for the field emitter display (FED) application. Low efficiency of $ZnGa_2O_4$ : Mn phosphors could be ascribed to the low penetration depth of into phosphors, which might results in charge accumulation on the phosphors screen. For increasing cathodoluminescent of $ZnGa_2O_4$ : Mn under low voltage excitation, wide band-gap oxide materials were added to the $ZnGa_2O_4$: Mn powder. It is found that the luminance can be increased by 20%. Measurement of leakage current on the phosphor screen shows that the enhancement of low-voltage cathodoluminescent by additive materials is mainly due to the consumption of surface charges on the phosphor.

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원자층 증착법을 통하여 유리 기판에 증착한 Ti-ZnO 박막의 전기적 광학적 특성 (Electrical and Optical Properties of Ti-ZnO Films Grown on Glass Substrate by Atomic Layer Deposition)

  • 이우재;김태현;권세훈
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2018년도 춘계학술대회 논문집
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    • pp.57-57
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    • 2018
  • Zinc-oxide (ZnO), II-VI semiconductor with a wide and direct band gap (Eg: 3.2~3.4 eV), is one of the most potential candidates to substitute for ITO due to its excellent chemical, thermal stability, specific electrical and optoelectronic property. However, the electrical resistivity of un-doped ZnO is not low enough for the practical applications. Therefore, a number of doped ZnO films have been extensively studied for improving the electrical conductivities. In this study, Ti-doped ZnO films were successfully prepared by atomic layer deposition (ALD) techniques. ALD technique was adopted to careful control of Ti doping concentration in ZnO films and to show its feasible application for 3D nanostructured TCO layers. Here, the structural, optical and electrical properties of the Ti-doped ZnO depending on the Ti doping concentration were systematically presented. Also, we presented 3D nanostructured Ti-doped ZnO layer by combining ALD and nanotemplate processes.

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U-Slot 패치를 이용한 광대역 안테나의 설계에 관한 연구 (A Study on the Design of Wideband Antenn as using U-Slot Patches)

  • 김원배
    • 대한전기학회논문지:시스템및제어부문D
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    • 제54권3호
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    • pp.180-185
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    • 2005
  • Microstrip antennas generally have a lot of advantages that are thin profile, lightweight, low cost, and conformability to a shaped surface application with integrated circuitry. In addition to military applications, they have become attractive candidates in a variety of commercial applications such as mobile satellite communications, the direct broadcast system (DBS), global positioning system (GPS), and remote sensing. Recently, many of the researches have been achieved for improving the impedance bandwidth of microstrip antennas. The basic form of the microstrip antenna, consisting of a conducting patch printed on a grounded substrate, has an impedance bandwidth of $1\~2\%$. For improvement of narrow bandwidth of microstrip patch, we were designed U-slot microstrip patch antenna in this paper. This antenna had wide bandwidth for all personal communication services (PCS) and IMT-2000. For the design of U-slot microstrip patch antenna using a finite difference time domain(FDTD) method. This numerical method could get the frequency property of U-slot patch antenna and the electromagnetic fields of slots.

모바일 전자장비 냉각용 Micro-CPL내 형상크기변화에 따른 열성능 해석 (Effect of Groove and Channel Size on the Thermal Transport Capacity of Micro-Capillary Pumped Loop for Mobile Electronic Device Cooling System)

  • 김병기;서정세;황건;문석환;배찬효
    • 대한설비공학회:학술대회논문집
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    • 대한설비공학회 2005년도 동계학술발표대회 논문집
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    • pp.329-334
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    • 2005
  • As more high power wide band gap devices are being utilized. the thermal management issues associated with these devices need to be resolved. High power small devices dissipate excessive heat that must be cooled, but traditional cooling methods are insufficient to provide such a cooling means. This paper will evaluate a micro-capillary pumped loop thermal management system that is incorporated into the shim of the device, taking advantage of phase-change to increase the thermal conductivity of the system. The results of the modeling of the thermal management system will be discussed.

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공통모드 노이즈 저감을 위한 전력전자모듈

  • 신종원
    • 전력전자학회:학술대회논문집
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    • 전력전자학회 2018년도 전력전자학술대회
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    • pp.336-337
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    • 2018
  • 전력 전자 시스템 내의 전도성 노이즈는 반도체 스위칭 소자의 고속 동작에 큰 영향을 받는다. 특히 실리콘 카바이드 (SiC) 등의 신소재 반도체 소자 (wide band-gap device, WBG device) 특유의 고속 dv/dt 특성이 전력전자모듈 (power electronics module, PEM) 내의 기생 용량 (parasitic capacitance)에 인가될 경우 상당한 전도성 노이즈의 원인이 되므로 이를 해결할 필요가 있다. 본 논문에서는 유전율이 낮은 재료를 PEM 내부에 사용함으로써 기생 용량을 줄이고, 따라서 공통 모드 전류의 발생 또한 최소화할 수 있는 설계를 제안한다. 제안된 PEM 설계 기법은 외부 필터를 필요로 하지 않으며, PEM 내의 스위칭 소자-방열 소자간 열저항 (thermal resistance)를 증가시키지 않으면서도 기생 용량을 최소화하여 노이즈를 억제한다. 제안된 방법으로 제작된 PEM을 1 kW 출력 100 kHz 스위칭 주파수의 강압형 dc-dc 컨버터에 적용하여 공통모드 전도성 전류가 줄어듬을 증명하였다.

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차량용 LED 백라이트 구동을 위한 GaN HEMT 기반의 동기 정류 부스트 컨버터 설계 및 구현 (Design and Implementation of Synchronous Rectified Boost Converter Based on GaN HEMT for LED Backlight in Vehicle)

  • 김성재;김현빈;윤재중;김종수
    • 전력전자학회:학술대회논문집
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    • 전력전자학회 2018년도 전력전자학술대회
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    • pp.322-323
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    • 2018
  • 차량용 LED 백라이트 구동회로는 시스템의 성능 향상을 위해 고밀도/고효율의 DC-DC컨버터가 요구되며 이를 위해 WBG(Wide Band Gap) 소자인 GaN HEMT가 기반의 동기 정류 부스트 컨버터의 설계 가이드를 제시하고 500kHz 스위칭 주파수의 30W급 동기 정류 부스트 컨버터를 구현한다.

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Dehydrodivanillin: Multi-dimensional NMR Spectral Studies, Surface Morphology and Electrical Characteristics of Thin Films

  • Gaur, Manoj;Lohani, Jaya;Balakrishnan, V.R.;Raghunathan, P.;Eswaran, S.V.
    • Bulletin of the Korean Chemical Society
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    • 제30권12호
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    • pp.2895-2898
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    • 2009
  • The complete structural characterization of dehydrodivanillin, an important natural product of interest to the food, cosmetics and aroma industries, has been carried out using multi-dimensional NMR spectroscopic techniques, and its previously $reported^{13}$C-NMR values have been reassigned. Dense and granular thin films of dehydrodivanillin have been grown by sublimation under high vacuum and studied using Scanning Electron Microscopy (SEM), electrical and optical techniques. The transmittance spectra of the films indicate a wide optical band gap of more than 3 eV. Typical J-V characteristics of Glass/ITO/dehydrodivanillin/Al structure exhibited moderate current densities ${\sim}10^{-4}\;A/cm^2$ at voltages > 25 V with an appreciable SCLC mobility of the order of $10^{-6}\;cm^2$/V-s.

Pico second 기립시간의 충격 전자기파 발생기의 개발 (Development of an Impulse Electromagnetic Wave Generator having Rise time of Pico Second)

  • 김영배;이홍식;정순신
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제55권12호
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    • pp.597-600
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    • 2006
  • When the energy of the nanoseconds high voltage pulse with hundreds picoseconds of the pulse rise time is emitted into the free space via an antenna, an ultra wide band electromagnetic wave is generated. This electromagnetic wave is expected to be used in transmitting vast amount of informations to far distance, high performance radars, post-packaging pasteurization of food, the detection of underground buried objects, searching of underground water veins or caves, the treatment of waste water or polluted gases and so forth. Additionally, this technology can be used in EMI(electromagnetic interference) evaluation of measuring instruments or printed circuit boards.