• 제목/요약/키워드: White band

검색결과 349건 처리시간 0.026초

Wide Color Gamut Backlight from Three-band White LED

  • Kim, Il-Ku;Chung, Kil-Yoan
    • Journal of the Optical Society of Korea
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    • 제11권2호
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    • pp.67-70
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    • 2007
  • A Wide Color Gamut Backlight system was studied using a three-band white Light-Emitting Diode. A three-band white light-emitting diode (LED) was fabricated using an InGaN-based blue LED chip that emits 445-nm blue peak, and a green phosphor and red phosphor that emit 535-nm green and 621-nm red peak emissions, respectively, when excited by 450-nm blue light. Using for this three-band white LED, wide color gamut backlight unit (BLU) was attained. The luminance of BLU and CIE 1931 chromaticity coordinates was $1,700Cd/m^2$ and (0.337, 0.346). Color filter matching simulations for this configuration show that the three-band white LED backlight can be enhanced by up to 16% over conventional white LED backlight color gamut.

적색, 녹색, 청색 발광 형광체와 보라색 발광 다이오드를 이용한 백색 광원의 광 특성 (Optical Properties of White Light Sources Using Red, Green, Blue Emitting Phosphors and Violet Light Emitting Diodes)

  • 권석순;박종윤;허영덕
    • 한국재료학회지
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    • 제16권3호
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    • pp.145-150
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    • 2006
  • Various colors of light emitting diodes(LED) and four-band white light sources are obtained using a violet LED and various phosphor films. $BaMg_2Al_{16}O_{27}:Eu\;(blue),\;SrGa_2S_4:Eu\;(green),\;and\;Eu(TTA)_3(PTA)$ (red) phosphors are dispersed in poly-vinyl-alcohol aqueous solutions, and phosphor films are prepared by coating the suspensions to PET film. The narrow band emission of $Eu(TTA)_3(PTA)$ phosphor has excellent red luminescent property for four-band white light excited by the violet LED.

Color Tuning of OLEDs Using the Ir Complexes of White Emission by Adjusting the Band Gap of Host Materials

  • Seo, Ji-Hyun;Kim, In-June;Seo, Ji-Hoon;Hyung, Gun-Woo;Kim, Young-Sik;Kim, Young-Kwan
    • Journal of Information Display
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    • 제9권2호
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    • pp.18-21
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    • 2008
  • We report on white organic light-emitting diodes (WOLEDs) based on single white dopants, $Ir(pq)_2$($F_2$-ppy) and $Ir(F_2-ppy)_2$(pq), where $F_2$-ppy and pq are 2-(2,4-difluorophenyl) pyridine and 2-phenylquinoline, respectively. The similar phosphorescent lifetime of two ligands lead to luminescence emission in two ligands simultaneously. However, the emission color of the devices was reddish, because the energy was not transferred efficiently from the 4,4,N,N'-dicarbazolebiphenyl (CBP) to the $F_2$-ppy ligand, due to the small band gap of the CBP. Accordingly, we used 1,4-phenylenesis(triphenylsilane) (UGH2) with a large band gap, instead of CBP as the host material. As a result, it was possible to adjust the emission color by the host material. The luminous efficiency of the device with $Ir(F_2-ppy)_2$(pq) doped in UGH2 was about 11 cd/A at 0.06 cd/$m^2$.

Design of Dual-Band Bandpass Filters for Cognitive Radio Application of TVWS Band

  • Kwon, Kun-An;Kim, Hyun-Keun;Yun, Sang-Won
    • Journal of electromagnetic engineering and science
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    • 제16권1호
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    • pp.19-23
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    • 2016
  • This paper presents a novel design for dual-band bandpass filters. The proposed filters are applicable to the carrier aggregation of the TV white space (TVWS) band and long-term evolution (LTE) band for cognitive radio applications. The lower passband is the TVWS band (470-698 MHz) whose fractional bandwidth is 40 %, while the higher passband is the LTE band (824-894 MHz) with 8 % fractional bandwidth. Since the two passbands are located very close to each other, a transmission zero is inserted to enhance the rejection level between the two passbands. The TVWS band filter is designed using magnetic coupling to obtain a wide bandwidth, and the LTE band filter is designed using dielectric resonators to achieve good insertion loss characteristics. In addition, in the proposed design, a transmission zero is placed with cross-coupling. The proposed dual-band bandpass filter is designed as a two-port filter (one input/one output) as well as a three-port filter (one common input/two outputs). The measured performances show good agreement with the simulated performances.

대역제한 백색잡음 재밍환경에서 GPS L1 C/A 신호를 위한 유효 반송파 대 잡음 전력비 추정치의 CRLB (Cramer-Rao Lower Bound of Effective Carrier-to-noise Power Ratio Estimation for a GPS L1 C/A Signal under Band-limited White Noise Jamming Environments)

  • 유승수;염동진;지규인;김선용
    • 제어로봇시스템학회논문지
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    • 제20권8호
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    • pp.890-894
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    • 2014
  • In this paper, we derive the CRLB (Cramer-Rao Lower Bound) of effective carrier-to-noise power ratio ($C/N_0$) estimation for a GPS (Global Positioning System) L1 C/A (Coarse/Acquisition) signal under band-limited white noise jamming environments. The quality of a received GPS signal is commonly described in terms of its $C/N_0$, implying that the noise is white and thus can be described by scalar noise density. However, if some intentional interference is received to a victim GPS receiver, then the $C/N_0$ is no longer the efficacious performance indicator. The correct and straightforward measurement to analyze the receiving situation is the effective $C/N_0$. In this paper, we consider a band-limited white noise jamming whose bandwidth is 2MHz and is the same as one of the first null-to-null bandwidth of the GPS L1 C/A signal.

사파장 백색 발광 다이오드의 발광 특성 (Luminescent Properties of Four-Band White Light Emitting Diodes)

  • 허영덕;임수미
    • 대한화학회지
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    • 제47권4호
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    • pp.370-375
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    • 2003
  • 보라색 발광 다이오드에 의해 여기되어 청색, 녹색, 적색을 발광하는 형광체로 각각 $BaMg_2Al_16O_27:Eu,\SrGa_2S_4:Eu$, ZnCdS:Ag,Cl 형광체를 선택하였다. 보라색 발광 다이오드의 발광에서 형광체에 의해서 완전히 흡수되지 않고 나오는 보라색 발광과 $BaMg_2Al_16O_27:Eu,\SrGa_2S_4:Eu$, ZnCdS:Ag,Cl 형광체에서 나오는 청색, 녹색, 적색 발광을 조합하여 사파장 백색 발광 다이오드를 만들었다. 사파장 백색 발광 다이오드의 발광 특성을 확인하였다.

Preparation, Characterization and Photoluminescence Properties of Ca1-xSrxS:Eu Red-emitting Phosphors for a White LED

  • Sung, Hye-Jin;Cho, Young-Sik;Huh, Young-Duk;Do, Young-Rag
    • Bulletin of the Korean Chemical Society
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    • 제28권8호
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    • pp.1280-1284
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    • 2007
  • A series of Ca1-xSrxS:Eu (x = 0.0, 0.2, 0.4, 0.6, 0.8, 1.0) phosphors were synthesized by solid-state reactions. The Ca1-xSrxS:Eu phosphors have a strong absorption at 455 nm, which corresponds to the emission wavelength of a blue LED. The emission peak of Ca1-xSrxS:Eu is blue shifted from 655 to 618 nm with increasing Sr content. The characteristics of Ca1-xSrxS:Eu phosphors make them suitable for use as wavelengthtunable red-emitting phosphors for three-band white LEDs pumped by a blue LED. In support of this, we fabricated a three-band white LED by coating SrGa2S4:Eu and Ca0.6Sr0.4S:Eu phosphors onto a blue LED chip, and characterized its optical properties.

플래시버트 용접과 연속열간압연법으로 제조된 철근의 기계적 성질과 미세조직에 미치는 합금원소의 영향 (Effect of Alloying Elements on Mechanical Properties and Microstructure of Steel Bar Fabricated by Endless Bar Rolling System with Flash Butt Welding)

  • 김기원;조승재;강정윤
    • Journal of Welding and Joining
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    • 제27권3호
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    • pp.52-59
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    • 2009
  • Flash butt welding is applied in many industries. New technology was developed recently for joining billets which called "EBROS (Endless Bar Rolling System)". After reheating billets in furnace, two billets were joined using flash butt welding. The objective of this study was to investigate the effect of alloying elements on mechanical properties of flash butt welded zone of hot rolled steel bar. The tensile properties on welded zone of Fe-Mn steel and Fe-Mn-V steel were dropped as compared with non-welded zone. Fe-Mn-Nb steel was opposed to the former. It was found that the white band at the welded zone had high ferrite volume fraction and large ferrite grain size. The vertical white band between flash butt welded billets was transformed into an arrowhead it of steel bar. According to this band, softening has been appeared. There was a interesting phenomenon with HAZ of Fe-Mn-Nb Steel, 40nm scale of particles were observed and hardness of HAZ was higher than non-welded zone.

용접 저온균열 감수성에 미치는 중심 편석의 영향 (Effects of Center Segregation on Weld Cold Cracking Susceptibility)

  • 안영호;이종봉;장래웅;소문섭
    • Journal of Welding and Joining
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    • 제12권2호
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    • pp.87-96
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    • 1994
  • Correlation between microstructural features and segregation of elements (Si, Mn, P and S) near the mid of thickness in the base metal and the synthetic HAZ was investigated. Furthermore, the relationship between the degree of center segregation and weld cold cracking susceptibility in the thickness direction was also conducted by evaluating the effect of P concentration on the critical applied stress. The results obtained are as follows: 1) Pearlite band, containing the MnS type inclusion and a locally transformed structure with a higher hardness, was observed in the center segregation region. 2) By the weld thermal cycle, center segregation region was transformed to the white band which had a higher hardness than that of base metal due to a greater hardenability of concentrated Mn, P etc.. 3) Weld cold cracking susceptibility in the thickness direction was mainly dependent on the concentration of impurity elements rather than on the number of the segregated particles near the mid of thickness. 4) During welding, the higher concentrated region was easily changed into white band. Therefore, it could be predicted that the initiation and propagation of a cold crack would be promoted by increasing the restraint stress and hydrogen content.

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Design of an Active Tunable Bandpass Filter for Spectrum Sensing Application in the TVWS Band

  • Kim, Dong-Su;Kim, Do-Hyun;Yun, Sang-Won
    • Journal of electromagnetic engineering and science
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    • 제17권1호
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    • pp.34-38
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    • 2017
  • In this paper, we propose an active tunable bandpass filter (BPF) for efficient spectrum sensing in the TV White Space (TVWS) band. By designing a narrow bandwidth, it is possible to improve the sensing probability. The basic circuit configuration involves switching the PIN diode compromising capacitor bank to change the capacitance of the LC resonant circuit. To cover the whole TVWS band effectively, we add a varactor diode, and the bandwidth is set to 25-MHz. We improve the insertion loss by using the active capacitance circuit. The tunable BPF in the TVWS band with a 20-MHz interval is designed to have 11 channels with a bandwidth of 25 MHz and a low insertion loss of 1.7-2.0 dB.