• Title/Summary/Keyword: Wet process

Search Result 1,261, Processing Time 0.025 seconds

Changes in free amino acids and hardness in round of Okinawan delivered cow beef during dry- and wet-aging processes

  • Hanagasaki, Takashi;Asato, Naokazu
    • Journal of Animal Science and Technology
    • /
    • v.60 no.9
    • /
    • pp.23.1-23.9
    • /
    • 2018
  • Background: Aging trials are conducted to determine characteristics associated with dry- and wet-aging processes of beef from delivered cows grown in Okinawa, i.e., dams that have finished giving birth (Okinawan delivered cow beef). Changes in free amino acids, hardness, and other factors were analyzed in round of Okinawan delivered cow beef during dry- and wet-aging processes along with a comparison with characteristics of beef imported from Australia. Results: Functional amino acids did not increase during both dry- and wet-aging processes. However, proteinogenic amino acids increased significantly (P < 0.05) and hardness tended to decrease during both dry- and wet-aging processes. On comparison between dry- and wet-aging processes by analysis of variance, drip and cooking losses were significantly lower during the dry-aging process than during the wet-aging process. However, there was no significant difference in free amino acids or hardness in this comparison. Conclusion: There was no significant difference between dry- and wet-aging methods for all studied variables related to free amino acids or hardness in this study.

Comparison of Etching Rate Uniformity of $SiO_2$ Film Using Various Wet Etching Method ($SiO_2$막의 습식식각 방법별 균일도 비교)

  • Ahn, Young-Ki;Kim, Hyun-Jong;Sung, Bo-Ram-Chan;Koo, Kyo-Woog;Cho, Jung-Keun
    • Journal of the Semiconductor & Display Technology
    • /
    • v.5 no.2 s.15
    • /
    • pp.41-46
    • /
    • 2006
  • Wet etching process in recent semiconductor manufacturing is devided into batch and single wafer type. Batch type wet etching process provides more throughput with poor etching uniformity compared to single wafer type process. Single wafer process achieves better etching uniformity by boom-swing injected chemical on rotating wafer. In this study, etching characteristics of $SiO_2$ layer at room and elevated temperature is evaluated and compared. The difference in etching rate and uniformity of each condition is identified, and the temperature profile of injected chemical is theoretically calculated and compared to that of experimental result. Better etching uniformity is observed with single wafer tool with boom-swing injection compared to single wafer process without boom-swing or batch type tool.

  • PDF

Experimental Study on Characteristics of Dry Wire Electrical Discharge Machining (EDM) Process (건성 와이어방전가공 프로세스 특성에 관한 실험적 연구)

  • Lee, Sang-Won;Kim, Hong-Seok
    • Journal of the Korean Society for Precision Engineering
    • /
    • v.27 no.1
    • /
    • pp.11-17
    • /
    • 2010
  • This study investigates the non-traditional manufacturing process of dry wire electrical discharge machining (EDM) in which liquid dielectric is replaced by a gaseous medium. Wire EDM experiments of thin workpieces were conducted both in wet and dry EDM conditions to examine the effects of spark cycle (T), spark on-time ($T_{on}$), thickness of work pieces, and work material on machining performance. The material removal rate (MRR) in the dry wire EDM case was much lower than that in the wet wire EDM case. In addition, the thickness of workpiece and work-material were found to be critical factors influencing the MRR for dry EDM process. The relative ratios of spark, arc and short circuit were also calculated and compared to examine the effectiveness of processes of dry and wet wire EDM.

The Characteristic Variation of Mask with Plasma Treatment (플라즈마 처리에 의한 마스크 특성 변화)

  • Kim, Jwa-Yeon;Choi, Sang-Su;Kang, Byung-Sun;Min, Dong-Soo;An, Young-Jin
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.21 no.2
    • /
    • pp.111-117
    • /
    • 2008
  • We have studied surface roughness, contamination of impurity, bonding with some gas element, reflectance and zeta potential on masks to be generated or changed during photolithography/dry or wet etching process. Mask surface roughness was not changed after photolithography/dry etching process. But surface roughness was changed on some area under MoSi film of Cr/MoSi/Qz. There was not detected any impurity on mask surface after plasma dry etching process. Reflectance of mask was increased after variable plasma etching treatment, especially when mask was treated with plasma including $O_2$ gas. Blank mask was positively charged when the mask was treated with Cr plasma etching gas($Cl_2:250$ sccm/He:20 $sccm/O_2:29$ seem, source power:100 W/bias power:20 W, 300 sec). But this positive charge was changed to negative charge when the mask was treated with $CF_4$ gas for MoSi plasma etching, resulting better wet cleaning. There was appeared with negative charge on MoSi/Qz mask treated with Cr plasma etching process condition, and this mask was measured with more negative after SC-1 wet cleaning process, resulting better wet cleaning. This mask was charged with positive after treatment with $O_2$ plasma again, resulting bad wet cleaning condition.

SU/PG Model Evaluation for river dynamics (자연하천 해석을 위한 SU/PG 모형의 개발)

  • Han, Kun Yeun;Park, Kyung Ok;Baek, Chang Hyun
    • Proceedings of the Korea Water Resources Association Conference
    • /
    • 2004.05b
    • /
    • pp.1331-1334
    • /
    • 2004
  • Wet/Dry phenomena typically incorporate a number of complex flow mechanism. These include a momentum transfer and turbulent mixing caused by the delivery of water. However currently available one dimensional schemes applicable to wet/dry process cannot effectively simulate such process. Two dimensional finite element model, SU/PG, is used to simulate complex flow in this study. The Wetted Area Method in SU/PG allows elements to transition gradually between wet and dry states. The model is applicable to a straight river reach with irregular bathymetry. Wet/dry calculation using the wetted area method can simulate simple numerical test. The computed results of velocity vectors and water depth agree with those of observed. The methodology Presented in this study will contributed to two-dimensional wet/dry analysis in a river in this country.

  • PDF

INDUSTRIAL STATUS OF DRY PLATING AS AN ALTERNATIVE TO WET PLATING PROCESS IN KOREAN SURFACE FINISHING INDUSTRY

  • Kwon, Sik-Chol;Baek, Woon-Sung;Lee, Gun-Hwan;Rha, Jong-Joo
    • Journal of the Korean institute of surface engineering
    • /
    • v.32 no.3
    • /
    • pp.253-256
    • /
    • 1999
  • Wet plating has been initiated and developed as a major surface finishing technology as of the long customized and highly productive process until now. As the external compression by virtue of the environmental preservation becomes stricter, there has been new move to adapt dry plating line instead of conventional wet plating one in domestic surface finishing industry. Dry plating, so-called, plasma surface technology has been developed in semiconducting industry and becomes a key technology to be useful as an alternative to wet plating in surface finishing industry. The historical progress of domestic surface finishing industry was outlined with the background on the adaptation of three dry plating processes-plasma spraying, plasma nitriding and ion plating. The present status of domestic industrial activity was covered on major alternative to wet plating.

  • PDF

The Role of Charge and Retention in Effective Wet End Management

  • Rantala, T.;Nokelainen, J.;Ojala, T.;Sopenlehto, Taina
    • Journal of Korea Technical Association of The Pulp and Paper Industry
    • /
    • v.32 no.5
    • /
    • pp.44-53
    • /
    • 2000
  • The development of paper machines, increasing machine speeds with new, mostly low basis weight and/or high ash content paper grades, as well as the fact that several trends regarding process items have increased the sensitivity of papermaking. At the same time, papermakers are looking for flexibility in the production line. We can say that with all PMs, the biggest benefits with the lowest capital spending can be achieved by focusing on improved wet end management. In order to manage wet end chemistry on a paper machine, our goal is to control subprocesses through which we can influence the operation of the entire wet end with maximum effect. Key measurements and controls are - white water consistency control which is the most effective way to control retention. - charge demand measurement and control which takes care of concentration of the anionic material entering to PM. - ash measurements and controls which are deeply related to retention and paper quality. This paper presents and concentrates to two of these key controls: retention and charge. The purpose of charge control is to give the process control the tools to react to changes caused by amount of dissolved and colloidal material incoming to wet end system. It is called coagulation or fixing control. Retention control is then taking care of retention aid flow to the process by responding any changes seen in white water consistency. It is called flocculation control. Each of these solutions separately, and even more effectively all together, stabilize the wet end operations and so greatly improve the produced paper quality and machine runnability. Practical results will be presented and they are referring to the latest mill cases. We have developed the first wet end measuring system in the late 1980s and control solutions based on this modern measuring technology were completely updated in 1990s. This paper introduces the principle, operation, and results of our unique wet end analyzers (retention and charge) which are at the level of automation solutions as a part of paper machine quality control. Especially our newest member of the platform, on-line charge analyzer has reached and set new standards to the on-line charge monitoring.

  • PDF

Experimental Study on Reduced Amount of Rebound in Wet Process Shotcrete Works by Upon Accelerator Contents (급결제 함유량에 따른 습식 Shotcrete 리바운드 감소량에 대한 실험적 연구)

  • Jeon, Jun Tai;Park, Hong Tae;Lee, Yang Kyu
    • KSCE Journal of Civil and Environmental Engineering Research
    • /
    • v.32 no.6D
    • /
    • pp.615-622
    • /
    • 2012
  • The aim of shotcrete is to increase the bearing capacity and to protect the excavated surface from erosion by preventing falling of rock mass. Shotcreting method is divided into two types as dry process and wet process. Since 1997, wet process method has been used more frequently than dry process method in field works. The failure to bond, so called rebound, occurs in many case during shotcrete works. The excess amount of rebound has a significant effect on the total construction cost. For example, material and craft-man cost increases, the shooting time delays due to deceleration of work execution stage, work efficiency of craft-man decreases and additional cost to remove the muck generates. In this study, therefore, the experimental analysis of rebound amount and strength was conducted by analyzing the actual construction data for wet process type of shotcreting method upon accelerator contents. Also, the effective and rational method was suggested, which can be actually implemented in the Korea construction sites.

Alkali metal free texturing for mono-crystalline silicon solar cell (알카리 금속을 배재한 단결정 실리콘 태양전지의 텍스쳐링 공정)

  • Kim, Taeyoon;Kim, Hoechang;Kim, Bumho
    • 한국신재생에너지학회:학술대회논문집
    • /
    • 2010.11a
    • /
    • pp.48.1-48.1
    • /
    • 2010
  • Mono-crystalline silicon solar cell is fabricated by using alkali metals. These alkali metal, used in wet etching process, must be removed for the high efficiency solar cell. As wet etching process has been adapted due to its low cost. But lots of alkali metals like potassium remains on the silicon surface and acts as impurities. To remove these alkali metals many of cleaning process have to be applied when solar cell manufacturing process. In terms of alkali metal removal, modified etchant solution is required for concise cleaning process. In this paper ethylenediamine was used and proposed for the substituion of postassium hydroxide.

  • PDF