• Title/Summary/Keyword: Wet cleaning

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The Effects of Organic Contamination and Surface Roughness on Cylindrical Capacitors of DRAM during Wet Cleaning Process

  • Ahn, Young-Ki;Ahn, Duk-Min;Yang, Ji-Chul;Kulkarni, Atul;Choi, Hoo-Mi;Kim, Tae-Sung
    • Journal of the Semiconductor & Display Technology
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    • v.10 no.3
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    • pp.15-19
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    • 2011
  • The performance of the DRAM is strongly dependent on the purity and surface roughness of the TIT (TiN/Insulator/ TiN) capacitor electrodes. Hence, in the present study, we evaluate the effects of organic contamination and change of surface roughness on the cylindrical TIT capacitor electrodes during the wet cleaning process by various analytical techniques such as TDMS, AFM, XRD and V-SEM. Once the sacrificial oxide and PR (Photo Resist) are removed by HF, the organic contamination and surface oxide films on the bottom Ti/TiN electrode become visible. With prolonged HF process, the surface roughness of the electrode is increased, whereas the amount of oxidized Ti/TiN is reduced due to the HF chemicals. In the 80nm DRAM device fabrication, the organic contamination of the cylindrical TIT capacitor may cause defects like SBD (Storage node Bridge Defect). The SBD fail bit portion is increased as the surface roughness is increased by HF chemicals reactions.

Ultrasonic Washing Performance Analysis for Eco-friendly Wet Cleaning (친환경 웨트클리닝을 위한 초음파 세탁성능 분석)

  • Jeongwon Mun;Jungsoon Lee
    • Journal of the Korean Society of Clothing and Textiles
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    • v.47 no.2
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    • pp.353-370
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    • 2023
  • In this study, the performance of ultrasonic cleaners for ultrasonic washing, which is one of the wet cleaning methods, was evaluated. The washing performances of ultrasonic cleaners were compared with commercial washing machines under normal and wool courses based on different parameters such as detergency, wrinkle formation, fabric damage, dimensional stability, and germ removal ability. Cotton, silk and wool were used in this experiment. Results revealed that the ultrasonic washing detergency of cotton fabrics was lower than that of commercial washing machines under the normal course and similar to that of commercial washing machines under the wool course. Detergency of silk fabrics was similar under both normal and wool courses. In terms of wrinkle formation and dimensional stability, ultrasonic cleaners showed lesser wrinkles and lower shrinkage than commercial washing machines. Considering damage evaluation, ultrasonic cleaners more effectively removed soil without damaging fabrics compared with commercial washing machines. The bacteria removal rate of both cotton and silk was more effective than the wool course of a commercial washing machine. Thus, this study compares the performance of ultrasonic cleaners and commercial washing machines and provides meaningful results related to ultrasonic washing performance.

A Study on the Treatment Performance of Coalescer to Treat Exhaust Gas Cleaning Water (콜레이서를 이용한 배기가스 세정수 처리 성능에 관한 연구)

  • Ha, Shin-Young;Kim, In-Soo
    • Journal of Navigation and Port Research
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    • v.40 no.1
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    • pp.1-6
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    • 2016
  • This study was conducted on a circulation system which can recycle waste water from EGCS(Exhaust Gas Cleaning System) using a wet scrubber that is used to treat air pollutants from ships. Though we developed a water treatment system that could remove effectively particulate matters and dispersed oil included in cleaning water for Ship Exhaust Gas Recycle System(DePM & DeSOx), we found that it is difficult to treat minutely dispersed oil only by means of centrifugal-typed purifier. Therefore, to this system, we applied a coalescer that coalesces emulsified minute oil particles in the 2nd phase of dispersion state after being filtered through the centrifugal-typed purifier. After we treated cleaning water drained out of Ship Exhaust Gas Recycle System(DePM & DeSOx) by using both purifier and coalescer, we found that particulate matters and dispersed oil were removed more than 55% and 99%, respectively, in comparison with those contained in cleaning water influent. Putting the results together, we conclude that the treated cleaning water can be recycled as normal cleaning water if this cleaning water treatment system is employed by the wet cleaning tower system for the reduction of air pollutants from ships.

Surface Cleaning of a Wafer Contaminated by Fingerprint Using a Laser Cleaning Technology (레이저 세정기술을 이용한 웨이퍼의 표면세정)

  • Lee, Myong-Hwa;Baek, Ji-Young;Song, Jae-Dong;Kim, Sang-Bum;Kim, Gyung-Soo
    • Journal of ILASS-Korea
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    • v.12 no.4
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    • pp.185-190
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    • 2007
  • There is a growing interest to develop a new cleaning technology to overcome the disadvantages of wet cleaning technologies such as environmental pollution and the cleaning difficulty of contaminants on integrated circuits. Laser cleaning is a potential technology to remove various pollutants on a wafer surface. However, there is no fundamental data about cleaning efficiencies and cleaning mechanisms of contaminants on a wafer surface using a laser cleaning technology. Therefore, the cleaning characteristics of a wafer surface using an excimer laser were investigated in this study. Fingerprint consisting of inorganic and organic materials was chosen as a representative of pollutants and the effectiveness of a laser irradiation on a wafer cleaning has been investigated qualitatively and quantitatively. The results have shown that cleaning degree is proportional to the laser irradiation time and repetition rate, and quantitative analysis conducted by an image processing method also have shown the same trend. Furthermore, the cleaning efficiency of a wafer contaminated by fingerprint strongly depended on a photothermal cleaning mechanism and the species were removed in order of hydrophilic and hydrophobic contaminants by laser irradiation.

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Effect of Brush Treatment and Brush Contact Sequence on Cross Contaminated Defects during CMP in-situ Cleaning

  • Kim, Hong Jin
    • Tribology and Lubricants
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    • v.31 no.6
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    • pp.239-244
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    • 2015
  • Chemical mechanical polishing (CMP) is one of the most important processes for enabling sub-14 nm semiconductor manufacturing. Moreover, post-CMP defect control is a key process parameter for the purpose of yield enhancement and device reliability. Due to the complexity of device with sub-14 nm node structure, CMP-induced defects need to be fixed in the CMP in-situ cleaning module instead of during post ex-situ wet cleaning. Therefore, post-CMP in-situ cleaning optimization and cleaning efficiency improvement play a pivotal role in post-CMP defect control. CMP in-situ cleaning module normally consists of megasonic and brush scrubber processes. And there has been an increasing effort for the optimization of cleaning chemistry and brush scrubber cleaning in the CMP cleaning module. Although there have been many studies conducted on improving particle removal efficiency by brush cleaning, these studies do not consider the effects of brush contamination. Depending on the process condition and brush condition, brush cross contamination effects significantly influence post-CMP cleaning defects. This study investigates brush cross contamination effects in the CMP in-situ cleaning module by conducting experiments using 300mm tetraethyl orthosilicate (TEOS) blanket wafers. This study also explores brush pre-treatment in the CMP tool and proposes recipe effects, and critical process parameters for optimized CMP in-situ cleaning process through experimental results.

Effect of Wet Cleaning on Shrinkage and Detergency of Wool and Rayon Fabrics (웨트클리닝이 양모, 레이온 직물의 치수 안정성과 세탁성능에 미치는 영향)

  • Chung, Seung-Eun;Yun, Chang-Sang;Park, Chung-Hee;Kim, Hyun-Sook
    • Journal of the Korean Society of Clothing and Textiles
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    • v.36 no.2
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    • pp.127-137
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    • 2012
  • This study focuses on the optimal washing conditions for dry cleaning recommended fabrics to minimize dimensional changes using wet cleaning. We suggest water-based alternatives to a perchloroethylene based cleaning process. Wool and rayon fabrics were laundered under various washing conditions and then air-dried for 24hrs. All specimens were extended after spinning and shrunk after drying. This is probably because the fibers were swollen and extended by wetting. The wool fabrics were shown to be acutely influenced by washing temperature and mechanical force. The optimal washing conditions for wool fabric to minimize the dimensional change implied a normal washing temperature and minimized mechanical force. For rayon specimens, dimensional change by a hand wash showed a remarkable decrease compared with a machine wash. Rayon fabric seemed to be influenced by the quantity of water contained in the fabric after spinning and washing time. Therefore, the desirable washing conditions for rayon fabric are to reduce the time required for washing and to increase the spin speed.

A Study on the Contamination of D.I. Water and its Effect on Semiconductor Device Manufacturing (초순수의 오염과 반도체 제조에 미치는 영향에 대한 연구)

  • Kim, Heung-Sik;Yoo, Hyung-Won;Youn Chul;Kim, Tae-Gak;Choi, Min-Sung
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.30A no.11
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    • pp.99-104
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    • 1993
  • We analyzed the D.I. water used in wet cleaning process of semiconductor device manufacturing both at the D.I. water plant and at the wafer cleaning bath to detect the impurity source of D.I. water contamination. This shows that the quantity of impurity is related to the resistivity of D.I. water, and we found that the cleanliness of the wafer surface processed in D.I. water bath was affected by the degree of the ionic impurity contamination. So we evaluated the cleaning effect as different method for Fe ion, having the best adsoptivity on wafer surface. Moreover the temperature effect of the D.I. water is investigated in case of anion in order to remove the chemical residue after wet process. In addition to the control of D.I. water resistivity, chemical analysis of impurity control in D.I. water should be included and a suitable cleaning an drinsing method needs to be investigated for a high yielding semiconductor device.

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A Study on the Conservation of Lady Shim's Costume Excavated in Jecheon Province (제천출토 청송심씨 출토유물의 보존처리)

  • Park, Bong Soon;Lee, Mok Kun;Chang, In Woo
    • Journal of the Korean Society of Costume
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    • v.65 no.7
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    • pp.47-59
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    • 2015
  • This paper studies the conservation treatment of Lady Shim's costume, which was excavated in Jecheon Province in 2012. There were the significant problems, which were encountered in the treatment of the costume ; First the Jeogoris were transformed during the excavation, Second fibers were seriously deteriorated, Third most of the fabrics such as Chusa were readily deformed. To overcome these problems and to secure stability in the conservation treatment, we decided to alternate between two different washing methods ; dry cleaning by n-hexane and wet cleaning by water. The costume shape was recovered by steaming and by swelling with Hanji(Korean traditional paper). The combined cleaning method proved to be relatively efficient and stable. In addition, the shape of Chusa was well preserved by dry cleaning.(using n-hexane also solved the problem of bad smell after washing with organic solvents.) The effects of the conservation treatment on the excavated costumes could be seen in the change of Lab color difference. Washing made the distribution of Lab color difference narrower, which may suggest that the impurities on the fiber was removed by washing. In addition, the value of L was greater than a-value and b-value after the treatment. This result indicates that the change of value represents the change of color difference by cleaning.

Alkali metal free texturing for mono-crystalline silicon solar cell (알카리 금속을 배재한 단결정 실리콘 태양전지의 텍스쳐링 공정)

  • Kim, Taeyoon;Kim, Hoechang;Kim, Bumho
    • 한국신재생에너지학회:학술대회논문집
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    • 2010.11a
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    • pp.48.1-48.1
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    • 2010
  • Mono-crystalline silicon solar cell is fabricated by using alkali metals. These alkali metal, used in wet etching process, must be removed for the high efficiency solar cell. As wet etching process has been adapted due to its low cost. But lots of alkali metals like potassium remains on the silicon surface and acts as impurities. To remove these alkali metals many of cleaning process have to be applied when solar cell manufacturing process. In terms of alkali metal removal, modified etchant solution is required for concise cleaning process. In this paper ethylenediamine was used and proposed for the substituion of postassium hydroxide.

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