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The Effects of Organic Contamination and Surface Roughness on Cylindrical Capacitors of DRAM during Wet Cleaning Process  

Ahn, Young-Ki (School of Mechanical Engineering)
Ahn, Duk-Min (Samsung Electronics)
Yang, Ji-Chul (Samsung Electronics)
Kulkarni, Atul (School of Mechanical Engineering)
Choi, Hoo-Mi (SKKU Advanced Institute of Nanotechnology)
Kim, Tae-Sung (School of Mechanical Engineering)
Publication Information
Journal of the Semiconductor & Display Technology / v.10, no.3, 2011 , pp. 15-19 More about this Journal
Abstract
The performance of the DRAM is strongly dependent on the purity and surface roughness of the TIT (TiN/Insulator/ TiN) capacitor electrodes. Hence, in the present study, we evaluate the effects of organic contamination and change of surface roughness on the cylindrical TIT capacitor electrodes during the wet cleaning process by various analytical techniques such as TDMS, AFM, XRD and V-SEM. Once the sacrificial oxide and PR (Photo Resist) are removed by HF, the organic contamination and surface oxide films on the bottom Ti/TiN electrode become visible. With prolonged HF process, the surface roughness of the electrode is increased, whereas the amount of oxidized Ti/TiN is reduced due to the HF chemicals. In the 80nm DRAM device fabrication, the organic contamination of the cylindrical TIT capacitor may cause defects like SBD (Storage node Bridge Defect). The SBD fail bit portion is increased as the surface roughness is increased by HF chemicals reactions.
Keywords
TIT capacitor; organic contamination; surface roughness; wet cleaning;
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