• Carbon letters
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• 제28권
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• pp.72-80
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• 2018

In this study, an empirical relationship between the energy band gap of multi-walled carbon nanotubes (MWCNTs) and synthesis parameters in a chemical vapor deposition (CVD) reactor using factorial design of experiment was established. A bimetallic (Fe-Ni) catalyst supported on $CaCO_3$ was synthesized via wet impregnation technique and used for MWCNT growth. The effects of synthesis parameters such as temperature, time, acetylene flow rate, and argon carrier gas flow rate on the MWCNTs energy gap, yield, and aspect ratio were investigated. The as-prepared supported bimetallic catalyst and the MWCNTs were characterized for their morphologies, microstructures, elemental composition, thermal profiles and surface areas by high-resolution scanning electron microscope, high resolution transmission electron microscope, energy dispersive X-ray spectroscopy, thermal gravimetry analysis and Brunauer-Emmett-Teller. A regression model was developed to establish the relationship between band gap energy, MWCNTs yield and aspect ratio. The results revealed that the optimum conditions to obtain high yield and quality MWCNTs of 159.9% were: temperature ($700^{\circ}C$), time (55 min), argon flow rate ($230.37mL\;min^{-1}$) and acetylene flow rate ($150mL\;min^{-1}$) respectively. The developed regression models demonstrated that the estimated values for the three response variables; energy gap, yield and aspect ratio, were 0.246 eV, 557.64 and 0.82. The regression models showed that the energy band gap, yield, and aspect ratio of the MWCNTs were largely influenced by the synthesis parameters and can be controlled in a CVD reactor.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2009년도 추계학술발표대회
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• pp.50.1-50.1
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• 2009

Transparent conductive oxides (TCOs) play an important role in thin-film solar cells in terms of low cost and performance improvement. Al-doped ZnO (AZO) is a very promising material for thin-film solar cellfabrication because of the wide availability of its constituent raw materials and its low cost. In this study, AZO films were prepared by low pressurechemical vapor deposition (LPCVD) using trimethylaluminum (TMA), diethylzinc(DEZ), and water vapor. In order to improve the absorbance of light, atypical surface texturing method is wet etching of front electrode using chemical solution. Alternatively, LPCVD can create a rough surface during deposition. This "self-texturing" is a very useful technique, which can eliminate additional chemical texturing process. The introduction of a TMA doping source has a strong influence on resistivity and the diffusion of light in a wide wavelength range.The haze factor of AZO up to a value of 43 % at 600 nm was achieved without an additional surface texturing process by simple TMA doping. The use of AZO TCO resulted in energy conversion efficiencies of 7.7 % when it was applied to thep-i-n a-Si:H thin film solar cell, which was comparable to commercially available fluorine doped tin oxide ($SnO_2$:F).

• 한국세라믹학회지
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• 제23권6호
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• pp.33-36
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• 1986

The $PbTiO_3$is well known materials having remarkable ferroelectric piezoelectric and pyro-electric properties. Thin films of the lead titanite has been successfully fabricated by Chemical Vapor Deposition on the borosilicate glass and titanium substrate. The $PbTiO_3$ thin film deposited on the borosilicate glass using the $PbCl_2$, $TiCl_4$ dry oxygen and wet oxygen at different temperatures (50$0^{\circ}C$-$700^{\circ}C$) grows along the (001) preferred orientation. On the other hand the $PbTiO_3$ thin film deposited on the titanium substrate using the PbO grows along the (101) preferred orientation. Growth orientation of deposited $PbTiO_3$ depends on the reaction species irrespective of substrate materials. Maximum dielectic constant and loss tangent of the $PbTiO_3$ thin film deposited on the titanium substrate are about 90 and 0.02 respectively, . Deposition rates of $PbTiO_3$ deposited on the borosilicate glass and titanium substrate are 10-15 ${\mu}{\textrm}{m}$/hr. Titanium dioxide interlayer formed be-tween $PbTiO_3$ film and titanium substrate material, It improved the adhesion of the film.

• 한국응용과학기술학회지
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• 제27권4호
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• pp.508-514
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• 2010

Regenerated cellulose fibers were prepared from three pulps containing different degree of polymerization(DP) and $\alpha$-cellulose contents by dry-jet wet spinning technique with cellulose dope in N-methylmorpholin N-oxide (NMMO). The effect of antioxidant, n-propyl gallate (PG) on the properties of different regenerated celluloses was studied using X-ray diffraction, copper number calculation, and viscometry. The degradaqtion of regenerated cellulose from pulp containing higher DP and lower $\alpha$-cellulose content was occurred more seriously. The tensile strength and initial modulus of regenerated cellulose fiber obtained from NMMO dope with PG were higher than those of fiber obtained from NMMO dope without PG. All fibers showed the round shape cross section and typical cellulose II crystalline structure.

• Korean Chemical Engineering Research
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• 제43권2호
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• pp.206-214
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• 2005

$TiO_2$에 담지된 불균일 촉매상에서 ppm 수준으로 존재하는 수중 유기오염물질들을 제거하기 위한 모델반응으로 액상 trichloroethylene(TCE) 분해반응을 선정하였으며, 여러 반응변수의 동시제어가 가능하도록 디자인된 연속 흐름식 고정층 반응기 내에서 incipient wetness 기법으로 제조된 여러 전이금속 산화물 촉매들의 TCE 분해활성을 조사하였다. 선택된 반응조건에서 모델반응의 내부확산저항은 없었으며, $36^{\circ}C$의 반응온도에서 촉매표면에 흡착에 의한 액상 TCE 제거된 정도는 무시할 만하였고 촉매반응에 의해서만 제거될 수 있었다. TCE 제거반응에 대한 촉매들의 활성 및 반응시간에 따른 분해효율의 의존성은 사용된 금속 산화물 및 담지체의 종류에 따라 달라지는 것으로 나타났다. 5 wt.% $CoO_x$/$TiO_2$ 촉매는 본 대상반응에 대하여 가장 우수한 활성을 갖는 것으로 나타났으며, 반응시간의 경과 정도에 따라 TCE 분해효율이 점진적으로 증가하여 안정되는 전이구간의 존재를 확인할 수 있었다. 이와 같은 촉매활성의 반응시간 의존성은 반응 초기와 일정시간 경과 후의 $TiO_2$ 표면에 존재하는 $CoO_x$의 표면구조가 상이할 뿐만 아니라 반응시간 경과와 함께 활성이 더욱 높은 Co species의 표면노출을 암시하고 있다. $NiO_x$, $CrO_x$와 같은 금속 산화물 촉매들의 반응활성은 매우 낮은 수준이었다. $TiO_2$와 MFI를 담지체로 하여 각각 incipient wetness법과 이온교환법으로 제조된 $CuO_x/TiO_2$, Cu-MFI, $FeO_x/TiO_2$ 및 Fe-MFI의 TCE 제거효율을 반응시간의 함수로 살펴본 결과, Cu 촉매들에서 관찰되는 반응시간-분해효율 거동과는 다른 현상이 $FeO_x/TiO_2$와 Fe-MFI 촉매상에서 관찰되었다. $36^{\circ}C$의 반응온도에서 전반응시간 동안에 5 wt.% $FeO_x/TiO_2$ 촉매상에서 TCE 제거반응은 일어나지 않았으나, 1.2 wt.% Fe-MFI의 경우 반응 초기에 높은 제거율을 일정시간 동안 유지하다가 서서히 감소하는 비활성화 현상이 발생하였다. 이는 동일한 활성성분이 사용된다 할지라도 그 제조방법에 따라 촉매활성이 달라질 수 있음을 보여주고 있으며, 액상반응 중에 일어나는 활성성분의 redox cycle이 중요한 역할을 할 수 있음을 암시하고 있다. 가장 우수한 $CoO_x/TiO_2$ 촉매의 TCE 분해활성에 미치는 $CoO_x$ 담지량, 반응온도 등의 영향을 조사한 결과, 최적의 $CoO_x$ 담지량이 존재하였고 반응온도가 높을수록 TCE 제거효율은 높게 나타났다. 반응 중에 $CoO_x$ leaching에 의한 $CoO_x$의 손실이 확인되었으나 TCE 전환율에 영향을 미칠 정도는 아닌 것으로 판단되었다.

• 멤브레인
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• 제15권2호
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• pp.147-156
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• 2005

폴리이서설폰은 상용화된 엔지니어링 고분자 소재 중에서 이산화탄소/질소 및 이산화탄소/메탄의 분리 능력이 아주 우수하면서 이산화탄소에 대한 가소화에 대한 저항력이 아주 뛰어난 것으로 알려져 있다[1-4]. 본 연구에서는 연소 배가스내 이산화탄소의 분리/회수를 위하여 건-습식 상전이법에 의해 비대칭구조의 폴리이서설폰 중공사막을 제조하였다. 제막용액은 고비점이면서 폴리이서설폰의 용매인 NMP와 저 비점의 폴리이서설폰의 팽윤제인 acetone를 일정한 조성으로 함께 녹여서 제조하였다. 방사용액의 농도, NMP와 acetone의 비, 방사높이, 증발조건, 실리콘 코팅조건을 변화시키면서 중공사를 제조하였으며, 얻어진 중공사막의 이산화탄소와 질소에 대한 기체투과도와 선택도는 순수기체를 통하여 측정하였다. 최적의 PES 중공사막은 PES/Acetone/NMP = 30/35/35 $wt\%$ 방사용액과 실리콘의 코팅조건하에 제조된 것으로 폴리이서설폰 소재 자체의 고유선택도인 $30\~40$의 $CO_2/N_2$ 선택도를 보였으며 $25\~50$ GPU의 이산화탄소 투과플럭스를 보였다. 이러한 선택도와 투과도로부터 계산된 중공사 외표면의 선택층의 두께는 $0.1\;{\mu}m$였다. 제조된 폴리이서설폰중공사막이 향후 연소 배가스내 이산화탄소 분리/회수용 막분리 공정에 적용될 경우 우수한 결과를 보일 것으로 예측된다.

• 한국재료학회지
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• 제32권12호
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• pp.522-527
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• 2022

Among efforts to improve techniques for the chemical vapor deposition of large-area and high-quality graphene films on transition metal substrates, being able to reliably transfer these atomistic membranes onto the desired substrate is a critical step for various practical uses, such as graphene-based electronic and photonic devices. However, the most used approach, the wet etching transfer process based on the complete etching of metal substrates, remains a great challenge. This is mainly due to the inevitable damage to the graphene, unintentional contamination of the graphene layer, and increased production cost and time. Here, we report the systematic study of an H₂ bubbling-assisted transfer technique for graphene films grown on Cu foils, which is nondestructive not only to the graphene film but also to the Cu substrate. Also, we demonstrate the origin of the graphene film tearing phenomenon induced by this H₂ bubbling-assisted transfer process. This study reveals that inherent features are produced by rolling Cu foil, which cause a saw-like corrugation in the poly(methyl methacrylate) (PMMA)/graphene stack when it is transferred onto the target substrate after the Cu foil is dissolved. During the PMMA removal stage, the graphene tearing mainly appears at the apexes of the corrugated PMMA/graphene stack, due to weak adhesion to the target substrate. To address this, we have developed a modified heat-press-assisted transfer technique that has much better control of both tearing and the formation of residues in the transferred graphene films.

• KSBB Journal
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• 제22권3호
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• pp.151-156
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• 2007

본 논문은 식물정유를 이용해 유해가스를 처리하는 경우에 식물정유의 주요 구성성분을 파악하고 이를 통해 처리효율을 규명하는데 연구하였다. 또한 식물정유와 메틸 멀캅탄 악취가스에 의한 메틸 멀캅탄 악취가스 제거반응 메카니즘을 규명하였으며 그 결과는 아래와 같다. 1) 악취가스 중 메틸 멀캅탄 악취가스는 식물정유 추출물과 중화반응에 의해 처리될 수 있음을 나타내었다. GC-MS분석에 의한 식물정유 추출물의 성분 중 식물정유의 화학구조는 알코올기, 케톤기, 에스터기가 관여하는 것으로 나타났다. 충전탑내 식물추출물의 순환속도의 실험결과에서 중화반응으로 메틸 멀캅탄 악취가스가 제거되는 메카니즘은 앞서 언급한 화학작용기와 메틸 멀캅탄 악취가스의 중화반응에 의해 염을 형성하여 제거되는 과정을 갖는다. 2) 메틸 멀캅탄 악취가스 제거효율은 식물정유 추출물의 희석비와 스프레이 분무속도 그리고 초기 메틸 멀캅탄 악취가스 농도 등에 따라 달라질 수가 있음을 알 수 있었다. 시험결과는 식물정유 추출물의 희석비와 스프레이 분무속도 그리고 초기 메틸 멀캅탄 악취가스 농도가 희박한 경우에 최대 98%의 제거효율을 얻을 수가 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.659-659
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• 2013

Recently, graphene has been intensively studied due to the fascinating physical, chemical and electrical properties. It shows high carrier mobility, high current density, and high thermal conductivity compare with conventional semiconductor materials even it has single atomic thickness. Especially, since graphene has fantastic electrical properties many researchers are believed that graphene will be replacing Si based technology. In order to realize it, we need to prepare the large and uniform graphene. Chemical vapor deposition (CVD) method is the most promising technique for synthesizing large and uniform graphene. Unfortunately, CVD method requires transfer process from metal catalyst. In transfer process, supporting polymer film (Such as poly (methyl methacrylate)) is widely used for protecting graphene. After transfer process, polymer layer is removed by organic solvents. However, it is impossible to remove it completely. These organic residues on graphene surface induce quality degradation of graphene since it disturbs movement of electrons. Thus, in order to get an intrinsic property of graphene completely remove of the organic residues is the most important. Here, we introduce modified wet graphene transfer method without PMMA. First of all, we grow the graphene from Cu foil using CVD method. And then, we deposited several metal films on graphene for transfer layer instead of PMMA. Finally, we fabricate graphene FET devices. Our approaches show low defect density and non-organic residues in comparison with PMMA coated graphene through Raman spectroscopy, SEM and AFM. In addition, clean graphene FET shows intrinsic electrical characteristic and high carrier mobility.

• 한국세라믹학회지
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• 제52권4호
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• pp.284-289
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• 2015

This study examined carbon layer coating on silicon carbide (SiC) fibers by utilizing solid-state and wet chemistry routes to confer toughness to the fiber-reinforced ceramic matrix composites, as an alternative to the conventional pyrolytic carbon (PyC) interphase layer. Electrophoretic deposition (EPD) of carbon black nanoparticles using both AC and DC current sources, and the vacuum infiltration of phenolic resin followed by pyrolysis were tested. Because of the use of a liquid phase, the vacuum infiltration resulted in more uniform and denser carbon coating than the EPD routes with solid carbon black particles. Thereafter, vacuum infiltration with controlled variation in phenolic resin concentration, as well as the iterations of infiltration steps, was improvised to produce a homogeneous carbon coating having a thickness of several hundred nanometers on the SiC fiber. Conclusively, it was demonstrated that the carbon coating on the SiC fiber could be achieved using a simpler method than the conventional chemical vapor deposition technique.