• 한국시뮬레이션학회논문지
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• 제11권1호
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• pp.23-30
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• 2002

An STI(Shallow Trench Isolation) by using a CMP(Chemical Mechanical Polishing) process has been one of the key issues in the device isolation[1] In this paper we fabricated N, P-MOSFEET tall analyse hump characteristics in various rounding oxdation thickness(ex : Skip, 500, 800, 1000$\AA$). As a result we found that hump occurred at STI channel edge region by field oxide recess. and boron segregation(early turn on due to boron segregatiorn at channel edge). Therefore we improved that hump occurrence by increased oxidation thickness, and control field oxide recess( 20nm), wet oxidation etch time(19HF,30sec), STI nitride wet cleaning time(99HF, 60sec+P 90min) and fate pre-oxidation cleaning time (U10min+19HF, 60sec) to prevent hump occurring at STI channel edge.

• 청정기술
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• 제15권2호
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• pp.81-90
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• 2009

본 연구에서는 산업체에서 대체 세정제를 객관적이고 체계적으로 선정하는데 도움을 주고자 여러 가지 세정성 평가방법을 실험을 통하여 비교 평가하였다. 세정성 평가방법으로는 중량법, OSEE (optically simulated electron emission)법, 접촉각법과 FTIR, UV-VIS, HPLC와 같은 정밀분석기기를 이용한 분석법을 사용하여 flux, solder, grease 등의 오염물질에 대한 세정성 평가를 수행하였다. 그 결과 중량법은 쉽고 간단하게 세정제의 세정효율을 측정할 수 있었지만 중량측정의 한계로 정밀측정이 어려웠다. 반면에 OSEE법은 세정제의 세정성 평가를 빠르고 정밀하게 수행할 수 있었다. 접촉각 측정법은 피세정물 표면에 오염물질과 세정제에 의한 얇은 친유성 막의 형성으로 인하여 접촉각 변화에 영향을 주기 때문에 세정성 평가에 특별한 주의가 요구되었다. 중량법으로 수행하기 어려운 정밀세정성 평가의 경우 UV-VIS, FTIR, HPLC와 같은 정밀분석기기를 이용하여 피세정물에 잔류한 flux, solder, grease 등의 극미량의 오염물을 특수 용제로 추출하여 아주 작은 농도의 오염물을 정량분석할 수 있었다.

• 한국의류학회지
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• 제35권1호
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• pp.115-124
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• 2011

This study provides an eco-friendly dyeing processing for chitosan fiber using Oenothera odorata jacquin as a dye. The effects of chemical mordants (Al, Cu, Fe) and natural mordant (Chestnut shell) on the color change for dyed chitosan fibers were measured by K/S values, L, $a^*$, $b^*$, H, V, C values, color fastness, and antimicrobial activity. The results are as follows. Dyeing conditions of Oenothera odorata jacquin on chitosan fibers were optimized to $70^{\circ}C$, 30 minutes and 200% on weight of fabric (o.w.f.). The pre-mordant concentration of aluminium (Al), copper (Cu) and iron (Fe) of chitosan fibers was optimized to 3% (o.w.f.) and 1% (o.w.f.), respectively. The post-mordant concentration of chemicals, such as Al, Cu and Fe, on chitosan was determined to 1% (o.w.f.). The hue of chitosan fibers by chemical mordants was measured to be reddish & yellow. The pre-mordant concentration of Chestnut shell of chitosan was optimized to 70% (o.w.f.). The post-mordant concentration of Chestnut shell on chitosan was determined to be 50% (o.w.f.). The hue of chitosan fibers by Chestnut shell mordant was measured to be reddish & yellow. The wet cleaning fastness of chitosan fibers was improved by a pre-mordant that used chemical mordants. In the case of the Chestnut shell mordant, the wet cleaning fastness was improved by a post-mordant. The dry cleaning fastness of chitosan fibers was excellent regardless of mordants and mordant methods. The antimicrobial activity of the chitosan fiber was shown at 99.9% and its excellent qualities remained after the dyeing and mordant processing.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2009년도 춘계학술대회 논문집
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• pp.168-168
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• 2009

고효율 실리콘 이종접합 태양전지 제작을 위한 요소기술 중 a-Si:H/c-Si 간의 계면 안정화는 태양전지 효율에 중요한 역할을 한다. 본 연구에서는 n-type 결정질 실리콘 기판을 사용하여, 소수전하들의 재결합을 방지하고, 계면 안정화를 실행하는 방안으로 실리콘 기판 습식 세정을 수행하였다. 반도체 공정에서 일반적으로 알려진 RCA 세정기법에 HF 세정을 마지막공정으로 추가하여 자연 산화막과 기타 불순물을 더욱 효과적으로 제거할 수 있도록 실험을 진행하였다. 마지막 공정으로 추가된 HF 세정에 의한 a-Si:H/c-Si 계면 안정화 효과를 관찰하기 위하여 HF농도와 HF 세정시간에 따른 소수반송자 수명을 측정하였다. 또한 HF 세정 이후 공정의 영향을 확인하기 위하여 PE-CVD법으로 a-Si:H 박막 증착 이전 실리콘 기판의 온도와 상온에서 머무는 시간에 따른 a-Si:H/c-Si 계면안정화 특성을 분석하였다. 본 실험을 통해 HF세정공정이 계면특성에 미치는 영향을 확인하였으며 실리콘 기판 습식 세정이 이종접합태양전지 특성에 미치는 영향을 분석하였다.

• 반도체디스플레이기술학회지
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• 제22권2호
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• pp.17-23
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• 2023

In semiconductor manufacturing processes, a cleaning process is important that can remove sub-micron particles. Conventional wet cleaning methods using chemical have limits in removing nano-particles. Thus, physical forces of a mechanical vibration up to 1 MHz frequency, was tried to aid in detaching them from the substrates. In this article, we developed a 1 MHz quartz megasonic for a bare wafer cleaning using finite element analysis. At first, a 1 MHz megasonic prototype was manufactured. Using the results, a main product which can improve a particle removal performance, was analyzed and designed. The maximum impedance frequency was 992 kHz, which agreed well with the experimental value of 986 kHz (0.6% error). Acoustic pressure distributions were measured, and the result showed that maximum / average was 400.0~432.4%, and standard deviation / average was 46.4~47.3%. Finally, submicron particles were deposited and cleaned for the assessment of the system performance. As a result, the particle removal efficiency (PRE) was proved to be 92% with 11 W power. Reflecting these results, the developed product might be used in the semiconductor cleaning process.

• 한국전기전자재료학회논문지
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• 제20권4호
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• pp.325-331
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• 2007

In this study, the inter-metal dielectric material of FSG was changed by low-k material in $0.13{\mu}m$ foundry-compatible technology (FCT) device process based on fluorinated silicate glass (FSG). Black diamond (BD) was used as a low-k material with a dielectric constant of 2.95 for optimization and yield-improvement of the low-k based device process. For yield-improvement in low-k based device process, some problems such as photoresist (PR) poisoning, damage of low-k in etch/ash/cleaning process, and chemical mechanical planarization (CMP) delamination must be solved. The PR poisoning was not observed in BD based device. The pressure in CMP process decreased to 2.8 psi to remove the CMP delamination for Cu-CMP and USG-CMP. $H_2O$ ashing process was selected instead of $O_2$ ashing process due to the lowest condition of low-k damage. NE14 cleaning after ashing process lot the removal of organic residues in vias and trenches was employed for wet process instead of dilute HF (DHF) process. The similar-state of SRAM yield was obtained in Cu/low-k process compared with the conventional $0.13{\mu}m$ FCT device by the optimization of these process conditions.

• Korean Chemical Engineering Research
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• 제45권2호
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• pp.203-207
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• 2007

불산과 오존 세정 시 실리콘 웨이퍼 표면의 미세입자를 효과적으로 제거할 수 있는 세정 방법에 대하여 연구하였다. 불산의 농도가 0.3 vol% 이상이 되어야 미세입자가 제거 되었으며, 초음파가 인가된 오존수를 사용 시 제거 효율은 증가되었다. 오존과 불산 세정 단계 이후에 추가로 극미량의(0.01 vol%) 희석 암모니아수 세정을 하면 미세입자가 99%이상 제거됨을 확인하였다. 이는 암모니아수에 의한 웨이퍼 표면의 미세 에칭 효과와 알칼리 영역에서의 재흡착 방지 효과가 동시에 작용함에 기인된다고 보인다. 한편, 불산-오존-희석 암모니아수 세정은 통상의 SC-1 세정과 비교할 때 표면 미세 거칠기가 개선되는 경향을 보였다. 불산-오존-희석 암모니아수 세정은 상온에서도 미세입자를 효과적으로 제거할 수 있는 세정 방법으로, 고온 공정 및 과다한 화학액을 사용하는 기존 습식세정의 대안으로서 기대된다.

• 반도체디스플레이기술학회지
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• 제4권4호
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• pp.19-26
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• 2005

The process optimization of ozone concentration and half life time was investigated in ultra pure water and alkaline solutions for the wet cleaning of silicon wafer surface at room temperature. In the ultra pure water,. the maximum concentration (35 ppm) of ozone was measured at oxygen flow rate of 3 liters/min and ozone generator power over 60%. The half life time of ozone increased at lower power of ozone generator. Additive gases such as $N_2$ and $CO_2$ were added to increase the concentration and half life time of ozone. Although the maximum ozone concentration was higher with the addition of $N_2$ gas, a longer half life time was observed with the addition of $CO_2$. When $NH_4OH$ of 0.05 or 0.10 vol% was added in DI water, the pH of the solution was around 10. The addition of ozone resulted in the half life time less than 1 min. In order to maintain high pH and ozone concentration, ozone was continuously supplied in 0.05 vol% ammonia solutions. 3 ppm of ozone was dissolved in ammonia solutions. The static contact angle of silicon wafer surface became hydrophilic. The particle removal was possible alkaline ozone solutions. The organic contamination can be removed by ozonated ultra pure water and then alkaline solution containing ozone can remove the particles on silicon surface at room temperature.

• 복식문화연구
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• 제11권6호
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• pp.902-912
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• 2003

The purpose of this research was two-folds; first, to investigate the type of soil contaminated in the Hunsang excavated from the Milchang-gun burial of Mapo for the purpose of proposing the adequate washing method, second, to utilize the chemical degradation result obtained from the previous research to identify the natural dye source used in the Hunsang textile. The application of KS K0251 test showed that the soil was more oleophilic than hydrophilic thus indicating that wet cleaning was more adequate that dry cleaning for the removal of Hunsang soil. The GC-MS result of the Hunsang extraction showed dimethyl phthalate and 2,4-di-tert-butylphenol as its degradation product and these coincided with the degradation products from the alizarin standard data of previous research. The comparison of the two suggested that it is likely that Hunsang was dyed with madder which has alizarin as its major chromophore.

• 한국정밀공학회지
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• 제26권5호
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• pp.150-156
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• 2009

The removal of tiny particles adhered to surfaces is one of the crucial prerequisite for a further increase in IC fabrication, large area displays and for the process in nanotechnology. Various cleaning techniques (wet chemical cleaning, scrubbing, pressurized jets and ultrasonic processes) currently used to clean critical surfaces are limited to removal of micrometer-sized particles. Therefore the removal of sub-micron sized particles from silicon wafers is of great interest. For this purpose various cleaning methods are currently under investigation. In this paper, we report on experiments on the cleaning effect of 100nm sized fluorescence particles on silicon wafer using the plasma shockwave occurred by femtosecond laser. The plasma shockwave is main effect of femtosecond laser cleaning to remove particles. The removal efficiency was dependent on the gap distance between laser focus and surface but in some case surface was damaged by excessive laser intensity. These experiments demonstrate the feasibility of femtosecond laser cleaning using 100nm size fluorescence particles on wafer.