• 제목/요약/키워드: Wet Process

검색결과 1,261건 처리시간 0.024초

Changes in free amino acids and hardness in round of Okinawan delivered cow beef during dry- and wet-aging processes

  • Hanagasaki, Takashi;Asato, Naokazu
    • Journal of Animal Science and Technology
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    • 제60권9호
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    • pp.23.1-23.9
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    • 2018
  • Background: Aging trials are conducted to determine characteristics associated with dry- and wet-aging processes of beef from delivered cows grown in Okinawa, i.e., dams that have finished giving birth (Okinawan delivered cow beef). Changes in free amino acids, hardness, and other factors were analyzed in round of Okinawan delivered cow beef during dry- and wet-aging processes along with a comparison with characteristics of beef imported from Australia. Results: Functional amino acids did not increase during both dry- and wet-aging processes. However, proteinogenic amino acids increased significantly (P < 0.05) and hardness tended to decrease during both dry- and wet-aging processes. On comparison between dry- and wet-aging processes by analysis of variance, drip and cooking losses were significantly lower during the dry-aging process than during the wet-aging process. However, there was no significant difference in free amino acids or hardness in this comparison. Conclusion: There was no significant difference between dry- and wet-aging methods for all studied variables related to free amino acids or hardness in this study.

$SiO_2$막의 습식식각 방법별 균일도 비교 (Comparison of Etching Rate Uniformity of $SiO_2$ Film Using Various Wet Etching Method)

  • 안영기;김현종;성보람찬;구교욱;조중근
    • 반도체디스플레이기술학회지
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    • 제5권2호
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    • pp.41-46
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    • 2006
  • Wet etching process in recent semiconductor manufacturing is devided into batch and single wafer type. Batch type wet etching process provides more throughput with poor etching uniformity compared to single wafer type process. Single wafer process achieves better etching uniformity by boom-swing injected chemical on rotating wafer. In this study, etching characteristics of $SiO_2$ layer at room and elevated temperature is evaluated and compared. The difference in etching rate and uniformity of each condition is identified, and the temperature profile of injected chemical is theoretically calculated and compared to that of experimental result. Better etching uniformity is observed with single wafer tool with boom-swing injection compared to single wafer process without boom-swing or batch type tool.

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건성 와이어방전가공 프로세스 특성에 관한 실험적 연구 (Experimental Study on Characteristics of Dry Wire Electrical Discharge Machining (EDM) Process)

  • 이상원;김홍석
    • 한국정밀공학회지
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    • 제27권1호
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    • pp.11-17
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    • 2010
  • This study investigates the non-traditional manufacturing process of dry wire electrical discharge machining (EDM) in which liquid dielectric is replaced by a gaseous medium. Wire EDM experiments of thin workpieces were conducted both in wet and dry EDM conditions to examine the effects of spark cycle (T), spark on-time ($T_{on}$), thickness of work pieces, and work material on machining performance. The material removal rate (MRR) in the dry wire EDM case was much lower than that in the wet wire EDM case. In addition, the thickness of workpiece and work-material were found to be critical factors influencing the MRR for dry EDM process. The relative ratios of spark, arc and short circuit were also calculated and compared to examine the effectiveness of processes of dry and wet wire EDM.

플라즈마 처리에 의한 마스크 특성 변화 (The Characteristic Variation of Mask with Plasma Treatment)

  • 김좌연;최상수;강병선;민동수;안영진
    • 한국전기전자재료학회논문지
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    • 제21권2호
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    • pp.111-117
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    • 2008
  • We have studied surface roughness, contamination of impurity, bonding with some gas element, reflectance and zeta potential on masks to be generated or changed during photolithography/dry or wet etching process. Mask surface roughness was not changed after photolithography/dry etching process. But surface roughness was changed on some area under MoSi film of Cr/MoSi/Qz. There was not detected any impurity on mask surface after plasma dry etching process. Reflectance of mask was increased after variable plasma etching treatment, especially when mask was treated with plasma including $O_2$ gas. Blank mask was positively charged when the mask was treated with Cr plasma etching gas($Cl_2:250$ sccm/He:20 $sccm/O_2:29$ seem, source power:100 W/bias power:20 W, 300 sec). But this positive charge was changed to negative charge when the mask was treated with $CF_4$ gas for MoSi plasma etching, resulting better wet cleaning. There was appeared with negative charge on MoSi/Qz mask treated with Cr plasma etching process condition, and this mask was measured with more negative after SC-1 wet cleaning process, resulting better wet cleaning. This mask was charged with positive after treatment with $O_2$ plasma again, resulting bad wet cleaning condition.

자연하천 해석을 위한 SU/PG 모형의 개발 (SU/PG Model Evaluation for river dynamics)

  • 한건연;박경옥;백창현
    • 한국수자원학회:학술대회논문집
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    • 한국수자원학회 2004년도 학술발표회
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    • pp.1331-1334
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    • 2004
  • Wet/Dry phenomena typically incorporate a number of complex flow mechanism. These include a momentum transfer and turbulent mixing caused by the delivery of water. However currently available one dimensional schemes applicable to wet/dry process cannot effectively simulate such process. Two dimensional finite element model, SU/PG, is used to simulate complex flow in this study. The Wetted Area Method in SU/PG allows elements to transition gradually between wet and dry states. The model is applicable to a straight river reach with irregular bathymetry. Wet/dry calculation using the wetted area method can simulate simple numerical test. The computed results of velocity vectors and water depth agree with those of observed. The methodology Presented in this study will contributed to two-dimensional wet/dry analysis in a river in this country.

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INDUSTRIAL STATUS OF DRY PLATING AS AN ALTERNATIVE TO WET PLATING PROCESS IN KOREAN SURFACE FINISHING INDUSTRY

  • Kwon, Sik-Chol;Baek, Woon-Sung;Lee, Gun-Hwan;Rha, Jong-Joo
    • 한국표면공학회지
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    • 제32권3호
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    • pp.253-256
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    • 1999
  • Wet plating has been initiated and developed as a major surface finishing technology as of the long customized and highly productive process until now. As the external compression by virtue of the environmental preservation becomes stricter, there has been new move to adapt dry plating line instead of conventional wet plating one in domestic surface finishing industry. Dry plating, so-called, plasma surface technology has been developed in semiconducting industry and becomes a key technology to be useful as an alternative to wet plating in surface finishing industry. The historical progress of domestic surface finishing industry was outlined with the background on the adaptation of three dry plating processes-plasma spraying, plasma nitriding and ion plating. The present status of domestic industrial activity was covered on major alternative to wet plating.

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The Role of Charge and Retention in Effective Wet End Management

  • Rantala, T.;Nokelainen, J.;Ojala, T.;Sopenlehto, Taina
    • 펄프종이기술
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    • 제32권5호
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    • pp.44-53
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    • 2000
  • The development of paper machines, increasing machine speeds with new, mostly low basis weight and/or high ash content paper grades, as well as the fact that several trends regarding process items have increased the sensitivity of papermaking. At the same time, papermakers are looking for flexibility in the production line. We can say that with all PMs, the biggest benefits with the lowest capital spending can be achieved by focusing on improved wet end management. In order to manage wet end chemistry on a paper machine, our goal is to control subprocesses through which we can influence the operation of the entire wet end with maximum effect. Key measurements and controls are - white water consistency control which is the most effective way to control retention. - charge demand measurement and control which takes care of concentration of the anionic material entering to PM. - ash measurements and controls which are deeply related to retention and paper quality. This paper presents and concentrates to two of these key controls: retention and charge. The purpose of charge control is to give the process control the tools to react to changes caused by amount of dissolved and colloidal material incoming to wet end system. It is called coagulation or fixing control. Retention control is then taking care of retention aid flow to the process by responding any changes seen in white water consistency. It is called flocculation control. Each of these solutions separately, and even more effectively all together, stabilize the wet end operations and so greatly improve the produced paper quality and machine runnability. Practical results will be presented and they are referring to the latest mill cases. We have developed the first wet end measuring system in the late 1980s and control solutions based on this modern measuring technology were completely updated in 1990s. This paper introduces the principle, operation, and results of our unique wet end analyzers (retention and charge) which are at the level of automation solutions as a part of paper machine quality control. Especially our newest member of the platform, on-line charge analyzer has reached and set new standards to the on-line charge monitoring.

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급결제 함유량에 따른 습식 Shotcrete 리바운드 감소량에 대한 실험적 연구 (Experimental Study on Reduced Amount of Rebound in Wet Process Shotcrete Works by Upon Accelerator Contents)

  • 전준태;박홍태;이양규
    • 대한토목학회논문집
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    • 제32권6D호
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    • pp.615-622
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    • 2012
  • 숏크리트는 현장에서 빠른 시공을 실시하여 굴착면을 침식으로부터 보호하고 암괴의 전단이동방지, 암괴의 붕괴방지, 개구절리의 봉합, 응력의 집중완화, 응력전달효과 등에 의하여 후속작업의 원활한 진행이 될 수 있도록 굴착면을 방지하여 지내력을 증대시키는 것이 주목적이다. 숏크리트공법으로는 건식과 습식의 두 가지방법이 있으며, 1997년 이후부터는 건식보다 습식 숏크리트가 많이 이용되고 있다. 그러나 작업 중 목적물에 부착되지 않고 반발되는 현상, 즉 리바운드가 많이 발생하며 이러한 많은 양의 리바운드는 숏크리트와 전체 공사비 원가에 중대한 영향을 미치게 된다. 특히 숏크리트는 재료비, 배합, 타설시간 증가, 재료의 취급과 계량장치에 소요되는 인력 및 버력제거를 위한 비용 증가 발생원인이 되고 있다. 이 연구에서는 국내현장에서 시행한 급결제 함유량에 따른 일반 습식 숏크리트 및 강섬유 습식 숏크리트공법의 시공실적을 분석하여 반발 양 및 강도의 실험적인 분석을 실시하였다. 또한 국내 건설공사에 실제 사용할 수 있는 효과적이고 합리적인 방법을 제시하였다.

알카리 금속을 배재한 단결정 실리콘 태양전지의 텍스쳐링 공정 (Alkali metal free texturing for mono-crystalline silicon solar cell)

  • 김태윤;김회창;김범호
    • 한국신재생에너지학회:학술대회논문집
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    • 한국신재생에너지학회 2010년도 추계학술대회 초록집
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    • pp.48.1-48.1
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    • 2010
  • 단결정 실리콘 태양전지 제조 공정이 진행되는 과정에서 각종 오염물에 의해 표면이 오염된다. 태양전지의 효율 개선을 위한 표면 texturing 공정은 주로 wet etch을 주로 사용한다. Wet etch 공정 시 주로 사용되는 KOH 용액은 texturing 후 실리콘 웨이퍼 표면에 K+ 이온을 남기고 이는 태양전지 표면에서의 불순물로 작용하여 효율을 저하시키는 요인이 된다. 이를 제거하기 위해 불산 및 오존에 의한 세정 공정이 추가로 필요로 하게 된다. 이러한 공정을 최소화 하며 잔존하는 알칼리 금속도 제거하기 위해, etchant로 알카리 용액이 아닌 ethylenediamine을 사용하여 texturing 후 KOH 용액과 비교해 보았다.

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