• Journal of Korean Society of Environmental Engineers
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• v.22 no.11
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• pp.2077-2083
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• 2000

For the application of wet air oxidation(WAO) process reactive dyes, remazol blacks has been selected as the subject for this study. The rate of decomposition relating to the reaction temperature and catalyst has been summarized during the catalytic wet air oxidation reaction. When 1.5 gram per liter of platinum is added titanium-dioxide and the partial pressure is adjusted to 6 atmosphere at the reaction temperature exceeding $200^{\circ}C$, more than 95% of the remazol blacks dyes were decomposed. When the reaction temperature was raised to $200^{\circ}C$, $220^{\circ}C$ and $250^{\circ}C$, respectively, for 240 minutes after adding the catalyst, the remaining rate of ultraviolet absorbance had dropped significantly to 18%, 12%, and 4%. At the reaction temperature of $250^{\circ}C$, color removal efficiency was approximately 95% or more after 120 minutes from the beginning of the reaction.

• Bulletin of the Korean Chemical Society
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• v.26 no.2
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• pp.281-284
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• 2005

The Fe/MgO catalysts with different Fe loadings (1, 4, 6, 15 and 30 wt% Fe) were prepared by a wet impregnation with iron nitrate as precursor. All of the catalysts were characterized by BET surface analyzer, X-ray diffraction (XRD), temperature-programmed reduction (TPR), and X-ray photoelectron spectroscopy (XPS). The maximum removal capacity of $H_2S$ was obtained with 15 wt% Fe/MgO catalyst which had the highest BET surface area among the measured catalysts. XRD of Fe/MgO catalysts showed that well dispersed Fe particles could be present on Fe/MgO with Fe loadings below 15 wt%. The crystallites of bulk $\alpha$-$Fe_2O_3$ became evident on 30 wt% Fe/MgO, which were confirmed by XRD. TPR profiles showed that the reducibility of Fe/MgO was strongly related to the loaded amounts of Fe on MgO support. Therefore, the highest removal efficiency of $H_2S$ in wet oxidation could be ascribed to a good dispersion and high reducibility of Fe/MgO catalyst. XPS studies indicated that the $H_2S$ oxidation with Fe/MgO could proceed via the redox mechanism ($Fe^{3+}\;{\leftrightarrow}\;Fe^{2+}$).

• Korean Chemical Engineering Research
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• v.47 no.3
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• pp.292-302
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• 2009

The wet oxidation of phenol has been investigated at temperatures from 150 to $250^{\circ}C$ and oxygen partial pressures from 25.8 to 75.0 bar with initial pH of 1.0 to 12.0 and initial phenol concentration of 10 g/l. Chemical Oxygen Demand COD has bee measured to estimate the oxidation rate. Reaction intermediates have been identified and their concentration profiles have been determined using liquid chromatography. The destruction rate of phenol have shown the first-order kinetics with respect to phenol and the changes in COD during wet oxidation have been described well with the lumped model. The impact of various homogeneous catalysts, such as $Cu^{2+}$, $Fe^{2+}$, $Zn^{2+}$, $Co^{2+}$ and $Ce^{3+}$ ions, on the destruction rate of phenol and COD has also been studied. The homogeneous catalyst of $CuSO_4$ has been found to be the most effective for the destruction of phenol and COD during wet oxidations. The destruction rate of formic acid formed during wet oxidations of phenol have increased as increasing temperature and $CuSO_4$ concentration. The final concentrations of acetic acid which has been formed during wet oxidations and difficult to oxidize have increased with reaction temperature and with decrease in the catalyst load.

• Electrical & Electronic Materials
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• v.8 no.1
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• pp.71-76
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• 1995

The thermal oxidation of Ge$_{0.2}$Si$_{0.8}$ in wet ambient has been investigated by Rutherford Backscattering Spectrometry(RBS). A uniform Ge$_{0.2}$Si$_{0.8}$O$_{2}$ oxide is formed at temperatures below 650.deg. C for polycrystalline and below 700.deg. C for single crystalline substrates. At higher temperatures Ge becomes depleted from the oxide and finally SiO$_{2}$ oxide is formed with Ge piled-ub behind it. The transition between the different oxide types depends also on the crystallinity of Ge$_{0.2}$Si$_{0.8}$. When a uniform Ge$_{0.2}$Si$_{0}$8/O$_{2}$ oxide grows, its thickness is proportional to the square root of the oxidation time, which suggests that the rate noting process is the diffusive transport of oxidant across the oxide. It is believed the oxidation is controlled by the competition between the diffusion of Ge or Si in Ge$_{0.2}$Si$_{0.8}$ and the movement of oxidation front.t.oxidation front.t.

• Journal of the Korean Institute of Telematics and Electronics
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• v.16 no.1
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• pp.26-32
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• 1979

Dry oxidation and wet oxidation processes of silicon have been examined experimentally. The oxidation temperatures were 1.10$0^{\circ}C$, 1.15$0^{\circ}C$, and 1.200 $^{\circ}C$, and oxygen flow rate was changed from 0.2 liter/min to 2.8 liter/min. From the experimental measurements, oxidation temperaturel time and oxygen flow rate have been tabutated for oxide layers 0.1$\mu$ - 1.0$\mu$ in thickness. The quality of the grown oxide layer has been investigated In terms of the dielectric constant, breakdown voltage, fixed surface charge densify (Qss/q) and mobile charge density (Q /q). From these measurements, it is concluded that the quality of the oxide layer is sufficient to expect the normal operation of MOS transistors.

• Journal of the Korean Ceramic Society
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• v.28 no.10
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• pp.757-766
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• 1991

These powder properties were investigated and prepared of ultrafine Mn-Zn ferrite powder by Direct-wet process from variation of oxidation condition. H2O2 oxidation the products were ultrafine spherical particles of about 400${\AA}$ in diameter and superparamagnetics. H2O2 and Air oxidation, Coexistance ultrafine spherical particles of about 400${\AA}$ and cubic particles of about 1000${\AA}$. The products were constructed of superparamagnetic and ferromagnetic particles, and Magnetization were about 30 emu/g. Air Oxidation, Above 6 hr Air 120 ι/hr and 4 hr of Air 180 ι/hr were uniform cubic particles of above 1000${\AA}$. The products were ferromagnetic particles and Magnetization of above 45 emu/g.

• Bulletin of the Korean Chemical Society
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• v.24 no.7
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• pp.1021-1022
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• 2003

• Korean Journal of Materials Research
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• v.4 no.6
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• pp.662-668
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• 1994

The physical and electrical characteristics of sub-l0nm thick capacitor dielectrics formed by wet oxidation of silicon nitride(oxide/nitride composite) and by removing the top oxide of oxidized silicon nitride(0xynitride) are described. For the capacitors with an oxide/nitride composite layer, the capacitance decreases sharply, but the breakdown field increases with an increase in the wet oxidation time at $900^{\circ}C$. For the capacitors with oxynitride layers, the values of both the capacitance and the breakdown field increase with increasing wet oxidation time. The reduction of effective thickness and the improved quality of oxynitride film are responsible for the improved capacitance and increased breakdown fields, respectively. In addition, intrinsic TDDB characteristics and early breakdown failure rate of oxynitride film are improved with increasing oxidation time. Consequently, the oxynitride film is suitable for dynamic memories as a thin dielectric film.

• Journal of Environmental Science International
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• v.16 no.12
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• pp.1431-1437
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• 2007

Cobalt titanates($CoTiO_x$), such as $CoTiO_3$ and $Co_2TiO_4$, have been synthesized via a solid-state reaction and characterized using X-ray diffraction(XRD) and X-ray photoelectron spectroscopic(XPS) measurement techniques, prior to being used for continuous wet trichloroethylene(TCE) oxidation at $36^{\circ}C$, to support our earlier chemical structure model for Co species in 5 wt% $CoO_x/TiO_2$(fresh) and(spent) catalysts. Each XRD pattern for the synthesized $CoTiO_3$ and $Co_2TiO_4$ was very close to those obtained from the respective standard XRD data files. The two $CoTiO_x$ samples gave Co 2p XPS spectra consisting of very strong main peaks for Co $2p_{3/2}$ and $2p_{1/2}$ with corresponding satellite structures at higher binding energies. The Co $2p_{3/2}$ main structure appeared at 781.3 eV for the $CoTiO_3$, and it was indicated at 781.1 eV with the $Co_2TiO_4$. Not only could these binding energy values be very similar to that exhibited for the 5 wt% $CoO_x/TiO_2$(fresh), but the spin-orbit splitting(${\Delta}E$) had also no noticeable difference between the cobalt titanates and a sample of the fresh catalyst. Neither of all the $CoTiO_x$ samples were active for the wet TCE oxidation, as expected, but a sample of pure $Co_3O_4$ had a good activity for this reaction. The earlier proposed model for the surface $CoO_x$ species existing with the fresh and spent catalysts is very consistent with the XPS characterization and activity measurements for the cobalt titanates.

• Applied Chemistry for Engineering
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• v.32 no.6
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• pp.659-663
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• 2021

10 m³/min (CMM) multi-pollutants abatement system was successfully developed by effectively integrating ozone oxidation, wet scrubbing, and wet electrostatic precipitation for the simultaneous removal of particulate matters (PMs) and NOx in a semiconductor fabrication process. The sophisticated control and optimization of operating parameters were conducted to maximize the destruction and removal efficiency of NOx. In particular, the stability test of a wet electrostatic precipitator was carried out in parallel for 30 days to validate the reliability of core parts including a power supply. An O₃/NO ratio, which is the most important operating parameter, was optimized to be about 1.5 and the optimization of wet scrubbing with a reducing agent made it possible to analyze the contribution of neutralization reaction.