• Korean Journal of Heritage: History & Science
• /
• v.46 no.1
• /
• pp.228-237
• /
• 2013

Paper relics are affected by a number of complex physical, chemical, biological and artificial damaging factors due to the vulnerability of organic materials. Wet cleaning is a conservation treatment method for removing pollutants from paper artefacts. This study was carried out in order to analyse the effect of wet cleaning on Hanji (Traditional Korean paper made from mulberry trees) which is the main material used in Korean paper relics (historical paper documents). For this study, the color change and folding endurance of artificially degraded paper was analysed before and after immersion wet cleaning. The result showed that washing each twice in 30 minutes is the most appropriate method for obtaining cleaning efficiency and material stability.

• Journal of the Semiconductor & Display Technology
• /
• v.4 no.3 s.12
• /
• pp.29-33
• /
• 2005

As the integrated devices become more and more sophistcated, the diameter of wafers increased up to 300 mm and strict level of cleaning is necessary to remove the particulates on the surface of wafer. Therefore we need a new type of wet-station which can reduce DI water and chemical in the cleaning process. Moreover, it is important to control the temperature and the concentration of chemical in the wet-station. In the conventional chemical supply system, it is difficult not only to fit the mixing rate of chemicals in cleaning process, but also to fit the quantity and temperature. Thus, we propose a new chemicals supply system, which overcomes above problems by the analysis of fluid and thermal transfer on chemical supply system.

• Journal of Conservation Science
• /
• v.35 no.1
• /
• pp.19-31
• /
• 2019

To study the cleaning effects and post-treatment stability assessment of various methods of cleaning textiles with metal thread, six naturally-soiled historical textiles with metal thread were investigated at the Metropolitan Museum of Art, New York. Prior to the cleaning of fabricated gold, silver, and copper thread that had been glued onto a paper substrate, the artificial deterioration was carried out in a controlled environment with light(UV and daylight), and temperature and humidity factors which would weaken and damage the samples. A synthetic soil mixture was applied to the samples to imitate soil found on the historic and archaeological textiles with metal thread; the cleaning effect and post-treatment assessment were investigated by use of three textile cleaning methods: mechanical cleaning, wet cleaning, and solvent cleaning. While investigating the naturally-soiled textiles with metal thread, it was determined that the soil colors and sizes of contaminating particles of each textile were different due to the diversity of original environmental factors and conditions. After cleaning with kneaded rubber, Stoddard solvent, n-decane or n-hexane, a bright, clean effect was apparent. Kneaded rubber was successful in picking up both large and small particles, but its stickiness caused some of the metal leaf to peel off. Stoddard solvent produced a good cleaning effect, but after use of n-hexane and n-decane in the cleaning process, a white layer of residue remained on the textile's surface. Wet cleaning was not effective and the rapid humidity changes between wet and dry conditions caused the edges of the paper substrate to lose their original shape.

• 한국신재생에너지학회:학술대회논문집
• /
• 2010.11a
• /
• pp.48.1-48.1
• /
• 2010

Mono-crystalline silicon solar cell is fabricated by using alkali metals. These alkali metal, used in wet etching process, must be removed for the high efficiency solar cell. As wet etching process has been adapted due to its low cost. But lots of alkali metals like potassium remains on the silicon surface and acts as impurities. To remove these alkali metals many of cleaning process have to be applied when solar cell manufacturing process. In terms of alkali metal removal, modified etchant solution is required for concise cleaning process. In this paper ethylenediamine was used and proposed for the substituion of postassium hydroxide.

• Journal of the Semiconductor & Display Technology
• /
• v.10 no.3
• /
• pp.15-19
• /
• 2011

The performance of the DRAM is strongly dependent on the purity and surface roughness of the TIT (TiN/Insulator/ TiN) capacitor electrodes. Hence, in the present study, we evaluate the effects of organic contamination and change of surface roughness on the cylindrical TIT capacitor electrodes during the wet cleaning process by various analytical techniques such as TDMS, AFM, XRD and V-SEM. Once the sacrificial oxide and PR (Photo Resist) are removed by HF, the organic contamination and surface oxide films on the bottom Ti/TiN electrode become visible. With prolonged HF process, the surface roughness of the electrode is increased, whereas the amount of oxidized Ti/TiN is reduced due to the HF chemicals. In the 80nm DRAM device fabrication, the organic contamination of the cylindrical TIT capacitor may cause defects like SBD (Storage node Bridge Defect). The SBD fail bit portion is increased as the surface roughness is increased by HF chemicals reactions.

• Clean Technology
• /
• v.7 no.1
• /
• pp.13-25
• /
• 2001

With fast advancement of fine machineries and semiconductor industries in recent decades, the ultra-cleaning of organic chemicals, submicron particles from contaminated unit equipments and products such as silicon wafers becomes one of the most important steps for further advancement of such industries. To date, two kinds of ultra cleaning techniques are used; one is the wet-cleaning and the other is the dry cleaning. In case of wet cleaning, removal of organic contaminants and submicron particles is made by DIW with additives such as $H_2O_2$, $H_2SO_4$, HCl, $NH_4OH$ and HF, etc. While the wet cleaning method is most widely adopted for various occasions, it is inevitable to discharge significant amount of toxic waste waters in environment. Dry cleaning is an alternative method to mitigate environmental pollution of the wet cleaning with maintaining comparable degree of cleaning to the wet cleaning. Although there are various concept of dry cleaning have been devised, the dry cleaning with environmentally-benign solvent such as carbon dioxide proven to show high degree of cleaning from the contaminated porous surface as well as from the bare surface. Thus, special global attention has been placing on this technique since it has important advantages of simple process schemes and no environmentally concern, etc. Thus, this article critically reviews the state-of-the-art of the supercritical fluid drying with emphasis on the thermo-physical characteristics of the supercritical solvent, environmental gains compared to other dry cleaning methods, and the generic aspects of the basic design and processing engineering.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2013.05a
• /
• pp.1005-1006
• /
• 2013

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2000.05a
• /
• pp.743-746
• /
• 2000

The removal of contaminants of silicon wafers has been investigated by various methods. Laser cleaning is the new dry cleaning technique to replace wafer wet cleaning in the near future. A dry laser cleaning uses inert gas jet to remove contaminant particles lifted off by the action of a KrF excimer laser. A laser cleaning model is developed to simulate the cleaning process and analyze the influence of contaminant particles and experimental parameters on laser cleaning efficiency. The model demonstrates that various types of submicrometer-sized particles from the front sides of silicon wafer can be efficiently removed by laser cleaning. The laser cleaning is explained by a particle adhesion model. including van der Waals forces and hydrogen bonding, and a particle removal model involving rapid thermal expansion of the substrate due to the thermoelastic effect. In addition, the experiment of wafer laser cleaning using KrF excimer laser was conducted to remove various contaminant particles.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.30A no.11
• /
• pp.99-104
• /
• 1993

We analyzed the D.I. water used in wet cleaning process of semiconductor device manufacturing both at the D.I. water plant and at the wafer cleaning bath to detect the impurity source of D.I. water contamination. This shows that the quantity of impurity is related to the resistivity of D.I. water, and we found that the cleanliness of the wafer surface processed in D.I. water bath was affected by the degree of the ionic impurity contamination. So we evaluated the cleaning effect as different method for Fe ion, having the best adsoptivity on wafer surface. Moreover the temperature effect of the D.I. water is investigated in case of anion in order to remove the chemical residue after wet process. In addition to the control of D.I. water resistivity, chemical analysis of impurity control in D.I. water should be included and a suitable cleaning an drinsing method needs to be investigated for a high yielding semiconductor device.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
• /
• 2005.05a
• /
• pp.157-162
• /
• 2005

The wafer's size has been increased up to 300mm according as the devices have been integrated sophisticatedly. For this process to make 300mm-wafer, it is required strict level which removes the particulates on the surface of wafer. Therefore we need new type wet-station which can reduce DI water and chemical in the cleaning process. Moreover, it is very important to control the temperature and the concentration of chemical wet-stat ion. The chemical supply system which is used currently is not only difficult to make a fit mixing rate of chemical in cleaning process, but also it is difficult to make fit quantity and temperature. We propose new chemical supply system, which overcomes the problems via analysis of fluid and thermal transfer on chemical supply system,