• 헤리티지:역사와 과학
• /
• 제46권1호
• /
• pp.228-237
• /
• 2013

지류문화재는 유기질이라는 재질의 특성상 시간이 지나면서 여러 가지 복합적인 손상인자(물리적 화학적 생물학적 인위적 원인)에 의해 유물의 보존성에 영향을 받고 있다. 그리하여 그 손상 정도에 따라 적절한 보존처리를 실시하게 되는데 그중 유물의 오염원을 제거하는 습식클리닝 처리가 지류문화재를 구성하는 주 원료인 한지의 재질에 미치는 영향을 분석해 보고자 본 연구를 실시하였다. 분석방법은 공시재료로 인공열화지를 사용하였고 습식클리닝(침적식)을 적용하여 처리 전 후의 색차와, 내절강도를 분석하였다. 분석결과 습식클리닝(침적식)에 의한 색도의 변화와 내절강도는 30분 침적을 2회 반복 처리하였을 때 가장 높은 수치를 나타냈다. 따라서 이때가 클리닝의 효율과 재질의 안정성이 가장 양호함을 알 수 있었다.

• 반도체디스플레이기술학회지
• /
• 제4권3호
• /
• pp.29-33
• /
• 2005

As the integrated devices become more and more sophistcated, the diameter of wafers increased up to 300 mm and strict level of cleaning is necessary to remove the particulates on the surface of wafer. Therefore we need a new type of wet-station which can reduce DI water and chemical in the cleaning process. Moreover, it is important to control the temperature and the concentration of chemical in the wet-station. In the conventional chemical supply system, it is difficult not only to fit the mixing rate of chemicals in cleaning process, but also to fit the quantity and temperature. Thus, we propose a new chemicals supply system, which overcomes above problems by the analysis of fluid and thermal transfer on chemical supply system.

• 보존과학회지
• /
• 제35권1호
• /
• pp.19-31
• /
• 2019

To study the cleaning effects and post-treatment stability assessment of various methods of cleaning textiles with metal thread, six naturally-soiled historical textiles with metal thread were investigated at the Metropolitan Museum of Art, New York. Prior to the cleaning of fabricated gold, silver, and copper thread that had been glued onto a paper substrate, the artificial deterioration was carried out in a controlled environment with light(UV and daylight), and temperature and humidity factors which would weaken and damage the samples. A synthetic soil mixture was applied to the samples to imitate soil found on the historic and archaeological textiles with metal thread; the cleaning effect and post-treatment assessment were investigated by use of three textile cleaning methods: mechanical cleaning, wet cleaning, and solvent cleaning. While investigating the naturally-soiled textiles with metal thread, it was determined that the soil colors and sizes of contaminating particles of each textile were different due to the diversity of original environmental factors and conditions. After cleaning with kneaded rubber, Stoddard solvent, n-decane or n-hexane, a bright, clean effect was apparent. Kneaded rubber was successful in picking up both large and small particles, but its stickiness caused some of the metal leaf to peel off. Stoddard solvent produced a good cleaning effect, but after use of n-hexane and n-decane in the cleaning process, a white layer of residue remained on the textile's surface. Wet cleaning was not effective and the rapid humidity changes between wet and dry conditions caused the edges of the paper substrate to lose their original shape.

• 한국신재생에너지학회:학술대회논문집
• /
• 한국신재생에너지학회 2010년도 추계학술대회 초록집
• /
• pp.48.1-48.1
• /
• 2010

단결정 실리콘 태양전지 제조 공정이 진행되는 과정에서 각종 오염물에 의해 표면이 오염된다. 태양전지의 효율 개선을 위한 표면 texturing 공정은 주로 wet etch을 주로 사용한다. Wet etch 공정 시 주로 사용되는 KOH 용액은 texturing 후 실리콘 웨이퍼 표면에 K+ 이온을 남기고 이는 태양전지 표면에서의 불순물로 작용하여 효율을 저하시키는 요인이 된다. 이를 제거하기 위해 불산 및 오존에 의한 세정 공정이 추가로 필요로 하게 된다. 이러한 공정을 최소화 하며 잔존하는 알칼리 금속도 제거하기 위해, etchant로 알카리 용액이 아닌 ethylenediamine을 사용하여 texturing 후 KOH 용액과 비교해 보았다.

• 반도체디스플레이기술학회지
• /
• 제10권3호
• /
• pp.15-19
• /
• 2011

The performance of the DRAM is strongly dependent on the purity and surface roughness of the TIT (TiN/Insulator/ TiN) capacitor electrodes. Hence, in the present study, we evaluate the effects of organic contamination and change of surface roughness on the cylindrical TIT capacitor electrodes during the wet cleaning process by various analytical techniques such as TDMS, AFM, XRD and V-SEM. Once the sacrificial oxide and PR (Photo Resist) are removed by HF, the organic contamination and surface oxide films on the bottom Ti/TiN electrode become visible. With prolonged HF process, the surface roughness of the electrode is increased, whereas the amount of oxidized Ti/TiN is reduced due to the HF chemicals. In the 80nm DRAM device fabrication, the organic contamination of the cylindrical TIT capacitor may cause defects like SBD (Storage node Bridge Defect). The SBD fail bit portion is increased as the surface roughness is increased by HF chemicals reactions.

• 청정기술
• /
• 제7권1호
• /
• pp.13-25
• /
• 2001

정밀 기계산업과 반도체 산업의 진보와 더불어 대상물의 초순도 세정이 하이테크 산업발전에 가장 중요한 핵심기술로 부각되고 있다. 현재 초순수 세정은 크게 습식세정과 건식세정으로 분류하고 있다. 습식세정의 경우 오랜 경험과 높은 세정효율을 보이고 있지만, 다량의 탈이온수에 과산화수소, 황산, 불산 또는 수산화 암모늄 등의 독성첨가제를 반복적으로 사용하고 있어 독성 폐수발생등 심각한 환경오염을 유발하고 있다. 따라서, 최근에는 습식 세정에 따른 환경오염의 문제를 개선하기 위한 노력으로 몇 가지 건식 세정기술이 개발되고 있다. 최근 들어 건식세정 방법 중에 소위 초임계상태의 환경 용매를 사용하는 기술이 개발되고 있으며, 높은 세정효율과 더불어 환경친화성이 높은 유망한 기술로 받아들여지고 있어 국제적인 관심이 집중되고 있다. 이 논문에서는 초임계 이산화탄소 세정에 관심을 두어, 초임계 용매의 물리화학적 특성과 환경친화측면, 세정공정의 엔지니어링, 그리고 국내외 기술 현황을 종합적으로 분석 평가하였다.

• 한국정밀공학회:학술대회논문집
• /
• 한국정밀공학회 2013년도 춘계학술대회 논문집
• /
• pp.1005-1006
• /
• 2013

• 한국정밀공학회:학술대회논문집
• /
• 한국정밀공학회 2000년도 춘계학술대회 논문집
• /
• pp.743-746
• /
• 2000

The removal of contaminants of silicon wafers has been investigated by various methods. Laser cleaning is the new dry cleaning technique to replace wafer wet cleaning in the near future. A dry laser cleaning uses inert gas jet to remove contaminant particles lifted off by the action of a KrF excimer laser. A laser cleaning model is developed to simulate the cleaning process and analyze the influence of contaminant particles and experimental parameters on laser cleaning efficiency. The model demonstrates that various types of submicrometer-sized particles from the front sides of silicon wafer can be efficiently removed by laser cleaning. The laser cleaning is explained by a particle adhesion model. including van der Waals forces and hydrogen bonding, and a particle removal model involving rapid thermal expansion of the substrate due to the thermoelastic effect. In addition, the experiment of wafer laser cleaning using KrF excimer laser was conducted to remove various contaminant particles.

• 전자공학회논문지A
• /
• 제30A권11호
• /
• pp.99-104
• /
• 1993

We analyzed the D.I. water used in wet cleaning process of semiconductor device manufacturing both at the D.I. water plant and at the wafer cleaning bath to detect the impurity source of D.I. water contamination. This shows that the quantity of impurity is related to the resistivity of D.I. water, and we found that the cleanliness of the wafer surface processed in D.I. water bath was affected by the degree of the ionic impurity contamination. So we evaluated the cleaning effect as different method for Fe ion, having the best adsoptivity on wafer surface. Moreover the temperature effect of the D.I. water is investigated in case of anion in order to remove the chemical residue after wet process. In addition to the control of D.I. water resistivity, chemical analysis of impurity control in D.I. water should be included and a suitable cleaning an drinsing method needs to be investigated for a high yielding semiconductor device.

• 한국반도체및디스플레이장비학회:학술대회논문집
• /
• 한국반도체및디스플레이장비학회 2005년도 춘계 학술대회
• /
• pp.157-162
• /
• 2005

The wafer's size has been increased up to 300mm according as the devices have been integrated sophisticatedly. For this process to make 300mm-wafer, it is required strict level which removes the particulates on the surface of wafer. Therefore we need new type wet-station which can reduce DI water and chemical in the cleaning process. Moreover, it is very important to control the temperature and the concentration of chemical wet-stat ion. The chemical supply system which is used currently is not only difficult to make a fit mixing rate of chemical in cleaning process, but also it is difficult to make fit quantity and temperature. We propose new chemical supply system, which overcomes the problems via analysis of fluid and thermal transfer on chemical supply system,