• Journal of the Korean Society of Clothing and Textiles
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• v.23 no.7
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• pp.987-997
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• 1999

The purpose of this study was finding out the appropriate cleaning method for buried fabrics from old tombs focusing on the conservation of textiles. Cleaning effects and physical properties change depending on cleaning method have been analysed, The following results were obtained from this study : 1. Wet cleaning showed better effect on the cleaning of fabrics compared to solvent cleaning which meant more water-soluble soils existed than oily soils. 2. All the cleaning methods used did not cause any distorsion or shrinkage to the fabrics because fabrics had been stabilized for a long time 3. Addition of detergent to cleaning system decreased the friction of fiber during cleaning rocess so that the damage of fabrics could be minimized., 4. Ironing is an undesirable process because heat remarkably weakened fibers.

• Proceedings of the Korean Institute of Intelligent Systems Conference
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• 2004.04a
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• pp.149-152
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• 2004

Generally the wafer is increased by 300mm. We are desired that the wafer is prevented from pollutions of metal contaminant on surface of wafer. We have to develop new wafer cleaning process of IC Manufacturing that can reduce DI water and chemical by removal of the wafer cleaning process step. Moreover, it is difficult to control temprature and density of chemical in spite of rapidly increasing automation of system. We design smart module controller for new generation of semiconductor wet station with intelligent algorithm using data that is taken by computer simulation for optimal system.

• Proceedings of the KIEE Conference
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• 2001.07d
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• pp.2649-2650
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• 2001

In this paper, the minimization of particle wit introduction of face to face to face type in cleaning. Easy input and change of parameter Monitoring function of process data in process function of 3 moving axis. Return Tank for Chem : cal solution.

• Journal of the Microelectronics and Packaging Society
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• v.23 no.4
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• pp.7-10
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• 2016

The post cleaning method for clean the shadow mask using in OLED (organic light emitting diode) emitter layer is always reforming. The cleaning solution and analysis method of shadow mask is still lack and not optimized. We use the simple and useful analytical method to determine the quantity and quality of organic and inorganic residue on surface of shadow mask. Finally analyze the cleaning solution using Raman spectroscopy efficiently.

• Journal of the Korean Society of Clothing and Textiles
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• v.36 no.2
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• pp.127-137
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• 2012

This study focuses on the optimal washing conditions for dry cleaning recommended fabrics to minimize dimensional changes using wet cleaning. We suggest water-based alternatives to a perchloroethylene based cleaning process. Wool and rayon fabrics were laundered under various washing conditions and then air-dried for 24hrs. All specimens were extended after spinning and shrunk after drying. This is probably because the fibers were swollen and extended by wetting. The wool fabrics were shown to be acutely influenced by washing temperature and mechanical force. The optimal washing conditions for wool fabric to minimize the dimensional change implied a normal washing temperature and minimized mechanical force. For rayon specimens, dimensional change by a hand wash showed a remarkable decrease compared with a machine wash. Rayon fabric seemed to be influenced by the quantity of water contained in the fabric after spinning and washing time. Therefore, the desirable washing conditions for rayon fabric are to reduce the time required for washing and to increase the spin speed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.4
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• pp.325-331
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• 2007

In this study, the inter-metal dielectric material of FSG was changed by low-k material in $0.13{\mu}m$ foundry-compatible technology (FCT) device process based on fluorinated silicate glass (FSG). Black diamond (BD) was used as a low-k material with a dielectric constant of 2.95 for optimization and yield-improvement of the low-k based device process. For yield-improvement in low-k based device process, some problems such as photoresist (PR) poisoning, damage of low-k in etch/ash/cleaning process, and chemical mechanical planarization (CMP) delamination must be solved. The PR poisoning was not observed in BD based device. The pressure in CMP process decreased to 2.8 psi to remove the CMP delamination for Cu-CMP and USG-CMP. $H_2O$ ashing process was selected instead of $O_2$ ashing process due to the lowest condition of low-k damage. NE14 cleaning after ashing process lot the removal of organic residues in vias and trenches was employed for wet process instead of dilute HF (DHF) process. The similar-state of SRAM yield was obtained in Cu/low-k process compared with the conventional $0.13{\mu}m$ FCT device by the optimization of these process conditions.

• Journal of the Semiconductor & Display Technology
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• v.22 no.2
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• pp.17-23
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• 2023

In semiconductor manufacturing processes, a cleaning process is important that can remove sub-micron particles. Conventional wet cleaning methods using chemical have limits in removing nano-particles. Thus, physical forces of a mechanical vibration up to 1 MHz frequency, was tried to aid in detaching them from the substrates. In this article, we developed a 1 MHz quartz megasonic for a bare wafer cleaning using finite element analysis. At first, a 1 MHz megasonic prototype was manufactured. Using the results, a main product which can improve a particle removal performance, was analyzed and designed. The maximum impedance frequency was 992 kHz, which agreed well with the experimental value of 986 kHz (0.6% error). Acoustic pressure distributions were measured, and the result showed that maximum / average was 400.0~432.4%, and standard deviation / average was 46.4~47.3%. Finally, submicron particles were deposited and cleaned for the assessment of the system performance. As a result, the particle removal efficiency (PRE) was proved to be 92% with 11 W power. Reflecting these results, the developed product might be used in the semiconductor cleaning process.

• Proceedings of the Materials Research Society of Korea Conference
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• 2005.05a
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• pp.56-56
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• 2005

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2003.11a
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• pp.256-259
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• 2003

To develop cleaning process various particles should be deposited on wafer surfaces to measure particle removal efficiencies. The purpose of the article in to evaluate, removal efficient)r of silica and alumina particles from wafer surfaces when they are deposited by dry and wet method. Dry deposition in air and wet spray deposition using solutions are used. van der Waals are considered to calculate the adhesion force of particles on surfaces. Higher adhesion force is measured on alumina particles on silicon when particles are deposited in air.

• Journal of the Korea Society for Simulation
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• v.11 no.1
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• pp.23-30
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• 2002

An STI(Shallow Trench Isolation) by using a CMP(Chemical Mechanical Polishing) process has been one of the key issues in the device isolation[1] In this paper we fabricated N, P-MOSFEET tall analyse hump characteristics in various rounding oxdation thickness(ex : Skip, 500, 800, 1000$\AA$). As a result we found that hump occurred at STI channel edge region by field oxide recess. and boron segregation(early turn on due to boron segregatiorn at channel edge). Therefore we improved that hump occurrence by increased oxidation thickness, and control field oxide recess( 20nm), wet oxidation etch time(19HF,30sec), STI nitride wet cleaning time(99HF, 60sec+P 90min) and fate pre-oxidation cleaning time (U10min+19HF, 60sec) to prevent hump occurring at STI channel edge.