• 제목/요약/키워드: Wet Cleaning

검색결과 193건 처리시간 0.026초

오염 입자 상태에 따른 레이저 충격파 클리닝 특성 고찰 (Investingation of Laser Shock Wave Cleaning with Different Particle Condition)

  • 강영재;이종명;이상호;박진구;김태훈
    • 한국레이저가공학회지
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    • 제6권3호
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    • pp.29-35
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    • 2003
  • In semiconductor processing, there are two types of particle contaminated onto the wafer, i.e. dry and wet state particles. In order to evaluate the cleaning performance of laser shock wave cleaning method, the removal of 1 m sized alumina particle at different particle conditions from silicon wafer has been carried out by laser-induced shock waves. It was found that the removal efficiency by laser shock cleaning was strongly dependent on the particle condition, i.e. the removal efficiency of dry alumina particle from silicon wafer was around 97% while the efficiencies of wet alumina particle in DI water and IPA are 35% and 55% respectively. From the analysis of adhesion forces between the particle and the silicon substrate, the adhesion force of the wet particle where capillary force is dominant is much larger than that of the dry particle where Van der Waals force is dominant. As a result, it is seen that the particle in wet condition is much more difficult to remove from silicon wafer than the particle in dry condition by using physical cleaning method such as laser shock cleaning.

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습식크리닝에 의한 지류문화재의 물성변화 (The change of matter properties of paper cultural heritage by wet cleaning)

  • 천주현;장은지
    • 박물관보존과학
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    • 제6권
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    • pp.73-83
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    • 2005
  • 지류문화재의 보존처리과정에서 실시되는 습식크리닝의 영향을 알아보기 위해 습식크리닝 전과 후의 물성변화를 관찰하였다. 조사방법으로 고지와 현대지 7종을 각각 습식크리닝 전과 후의 구조적, 광학적, 강도적 성질의 변화를 측정하였다. 그 결과 습식크리닝은 지류문화재의 물성변화를 일으키고 특히 안료, 먹, 염료 등의 구성성분을 약화시킬 수 있음을 확인할 수 있었다.

초임계 이산화탄소를 이용한 초순수 건식 세정기술 (Ultra Dry-Cleaning Technology Using Supercritical Carbon Dioxide)

  • 정승남;김선영;유기풍
    • 청정기술
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    • 제7권1호
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    • pp.13-25
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    • 2001
  • 정밀 기계산업과 반도체 산업의 진보와 더불어 대상물의 초순도 세정이 하이테크 산업발전에 가장 중요한 핵심기술로 부각되고 있다. 현재 초순수 세정은 크게 습식세정과 건식세정으로 분류하고 있다. 습식세정의 경우 오랜 경험과 높은 세정효율을 보이고 있지만, 다량의 탈이온수에 과산화수소, 황산, 불산 또는 수산화 암모늄 등의 독성첨가제를 반복적으로 사용하고 있어 독성 폐수발생등 심각한 환경오염을 유발하고 있다. 따라서, 최근에는 습식 세정에 따른 환경오염의 문제를 개선하기 위한 노력으로 몇 가지 건식 세정기술이 개발되고 있다. 최근 들어 건식세정 방법 중에 소위 초임계상태의 환경 용매를 사용하는 기술이 개발되고 있으며, 높은 세정효율과 더불어 환경친화성이 높은 유망한 기술로 받아들여지고 있어 국제적인 관심이 집중되고 있다. 이 논문에서는 초임계 이산화탄소 세정에 관심을 두어, 초임계 용매의 물리화학적 특성과 환경친화측면, 세정공정의 엔지니어링, 그리고 국내외 기술 현황을 종합적으로 분석 평가하였다.

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고문헌 보존처리의 클리닝 방법에 따른 인공열화지 물성 변화 - 침적 습식클리닝을 중심으로 - (The Change of Physical Properties of Artificial aging Paper in the Cleaning Process for the Conservation Treatment of Historical Paper Documents - Focusing on Immersion Wet Cleaning -)

  • 정선화;조안나
    • 헤리티지:역사와 과학
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    • 제46권1호
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    • pp.228-237
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    • 2013
  • 지류문화재는 유기질이라는 재질의 특성상 시간이 지나면서 여러 가지 복합적인 손상인자(물리적 화학적 생물학적 인위적 원인)에 의해 유물의 보존성에 영향을 받고 있다. 그리하여 그 손상 정도에 따라 적절한 보존처리를 실시하게 되는데 그중 유물의 오염원을 제거하는 습식클리닝 처리가 지류문화재를 구성하는 주 원료인 한지의 재질에 미치는 영향을 분석해 보고자 본 연구를 실시하였다. 분석방법은 공시재료로 인공열화지를 사용하였고 습식클리닝(침적식)을 적용하여 처리 전 후의 색차와, 내절강도를 분석하였다. 분석결과 습식클리닝(침적식)에 의한 색도의 변화와 내절강도는 30분 침적을 2회 반복 처리하였을 때 가장 높은 수치를 나타냈다. 따라서 이때가 클리닝의 효율과 재질의 안정성이 가장 양호함을 알 수 있었다.

Fabrication of Ozone Bubble Cleaning System and its Application to Clean Silicon Wafers of a Solar Cell

  • Yoon, J.K.;Lee, Sang Heon
    • Journal of Electrical Engineering and Technology
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    • 제10권1호
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    • pp.295-298
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    • 2015
  • Ozone micro-bubble cleaning system was designed, and made to develop a unique technique to clean wafers by using ozone micro-bubbles. The ozone micro-bubble cleaning system consisted of loading, cleaning, rinsing, drying and un-loading zones, respectively. In case of the cleaning the silicon wafers of a solar cell, more than 99 % of cleaning efficiency was obtained by dipping the wafers at 10 ppm of ozone for 10 minutes. Both of long cleaning time and high ozone concentration in the wet-solution with ozone micro-bubbles reduced cleaning efficiency because of the re-sorption of debris. The cleaning technique by ozone micro-bubbles can be also applied to various wafers for an ingot and LED as an eco-friendly method.

Evaluation of Particle Removal Efficiency during Jet Spray and Megasonic Cleaning for Aluminum Coated Wafers

  • Choi, Hoomi;Min, Jaewon;Kulkarni, Atul;Ahn, Youngki;Kim, Taesung
    • 반도체디스플레이기술학회지
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    • 제11권3호
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    • pp.7-11
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    • 2012
  • Among various wet cleaning methods, megasonic and jet spray gained their popularity in single wafer cleaning process for the efficient removal of particulate contaminants from the wafer surface. In the present study, we evaluated these two cleaning methods for particle removal efficiency (PRE) and pattern damage on the aluminum layered wafer surface. Also the effect of $CO_2$ dissolved water in jet spray cleaning is assessed by measuring PRE. It is observed that the jet spray cleaning process is more effective in terms of PRE and pattern damage compared to megasonic cleaning and the mixing of $CO_2$ in the water during jet sprays further increases the PRE. We believe that the outcome of the present study is useful for the semiconductor cleaning process engineers and researchers.

Cleaning Fabricated Metal Thread: A Post-treatment Stability Assessment after Artificial Deterioration and the Application of Synthetic Soil

  • Park, Hae Jin;Hwang, Minsun;Chung, Yong Jae
    • 보존과학회지
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    • 제35권1호
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    • pp.19-31
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    • 2019
  • To study the cleaning effects and post-treatment stability assessment of various methods of cleaning textiles with metal thread, six naturally-soiled historical textiles with metal thread were investigated at the Metropolitan Museum of Art, New York. Prior to the cleaning of fabricated gold, silver, and copper thread that had been glued onto a paper substrate, the artificial deterioration was carried out in a controlled environment with light(UV and daylight), and temperature and humidity factors which would weaken and damage the samples. A synthetic soil mixture was applied to the samples to imitate soil found on the historic and archaeological textiles with metal thread; the cleaning effect and post-treatment assessment were investigated by use of three textile cleaning methods: mechanical cleaning, wet cleaning, and solvent cleaning. While investigating the naturally-soiled textiles with metal thread, it was determined that the soil colors and sizes of contaminating particles of each textile were different due to the diversity of original environmental factors and conditions. After cleaning with kneaded rubber, Stoddard solvent, n-decane or n-hexane, a bright, clean effect was apparent. Kneaded rubber was successful in picking up both large and small particles, but its stickiness caused some of the metal leaf to peel off. Stoddard solvent produced a good cleaning effect, but after use of n-hexane and n-decane in the cleaning process, a white layer of residue remained on the textile's surface. Wet cleaning was not effective and the rapid humidity changes between wet and dry conditions caused the edges of the paper substrate to lose their original shape.

플라즈마 처리에 의한 마스크 특성 변화 (The Characteristic Variation of Mask with Plasma Treatment)

  • 김좌연;최상수;강병선;민동수;안영진
    • 한국전기전자재료학회논문지
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    • 제21권2호
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    • pp.111-117
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    • 2008
  • We have studied surface roughness, contamination of impurity, bonding with some gas element, reflectance and zeta potential on masks to be generated or changed during photolithography/dry or wet etching process. Mask surface roughness was not changed after photolithography/dry etching process. But surface roughness was changed on some area under MoSi film of Cr/MoSi/Qz. There was not detected any impurity on mask surface after plasma dry etching process. Reflectance of mask was increased after variable plasma etching treatment, especially when mask was treated with plasma including $O_2$ gas. Blank mask was positively charged when the mask was treated with Cr plasma etching gas($Cl_2:250$ sccm/He:20 $sccm/O_2:29$ seem, source power:100 W/bias power:20 W, 300 sec). But this positive charge was changed to negative charge when the mask was treated with $CF_4$ gas for MoSi plasma etching, resulting better wet cleaning. There was appeared with negative charge on MoSi/Qz mask treated with Cr plasma etching process condition, and this mask was measured with more negative after SC-1 wet cleaning process, resulting better wet cleaning. This mask was charged with positive after treatment with $O_2$ plasma again, resulting bad wet cleaning condition.

Development of Multi-Chemical Supply System for Semiconductor Wafer Cleaning Station

  • Chung, Myung-Jin;Song, Young-Wook
    • 제어로봇시스템학회:학술대회논문집
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    • 제어로봇시스템학회 2005년도 ICCAS
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    • pp.1309-1312
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    • 2005
  • A multi-chemical supply system is developed and applied to a wet station, which uses the multi-chemical process in one bath. To control the concentration of two chemicals, control logic of a supply pump is programmed using the programable logic controller (PLC). By using the multi-chemical supply system, wet station with single bath is applied to cleaning process using multi chemicals such as buffed oxide etchant (BOE) and standard clean 1 (SC-1). The concentration of each chemical is measured in the bath to verify the multi-chemical supply system. The control range in the each chemical concentration is measured to 1.33weight% in NH4OH and 0.23weight% in H2O2. The multi-chemical supply system can be movable and usable as an independent module of fixed wet station. By simply midifying the PLC, a multi-chemical supply system can be developed for a wet station.

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