• 한국컴퓨터정보학회논문지
• /
• 제20권12호
• /
• pp.1-8
• /
• 2015

Wear leveling techniques have been studied to prolong the lifetime of NAND flash memory. Most of studies have used Program/Erase(P/E) cycles as wear index for wear leveling. Unfortunately, P/E cycles could not predict the real lifetime of NAND flash blocks. Therefore, these algorithms have the limited performance from prolonging the lifetime when applied to the SSD. In order to apply the real lifetime, wear leveling algorithms, which use raw Bit Error Rate(rBER) as wear index, have been studied in recent years. In this paper, we propose CrEWL(Cold data identification using raw Bit error rate in Wear Leveling), which uses rBER as wear index to apply to the real lifetime. The proposed wear leveling reduces an overhead of garbage collections by using HBSQ(Hot Block Sequence Queue) which identifies hot data. In order to reduce overhead of wear leveling, CrEWL does not perform wear leveling until rBER of the some blocks reaches a threshold value. We evaluate CrEWL in comparison with the previous studies under the traces having the different Hot/Cold rate, and the experimental results show that our wear leveling technique can reduce the overhead up to 41% and prolong the lifetime up to 72% compared with previous wear leveling techniques.

• 한국컴퓨터정보학회논문지
• /
• 제22권3호
• /
• pp.1-8
• /
• 2017

In this paper, we propose a new hybrid wear leveling technique for NAND Flash memory, called Time-Aware Wear Leveling (TAWL). Our proposal prolongs the lifetime of NAND Flash memory by using dynamic wear leveling technique which considers the wear level of hot blocks as well as static wear leveling technique which considers the wear level of the whole blocks. TAWL also reduces the overhead of garbage collection by separating hot data and cold data using update frequency rate. We showed that TAWL enhanced the lifetime of NAND flash memory up to 220% compared with previous wear leveling techniques and our technique also reduced the number of copy operations of garbage collections by separating hot and cold data up to 45%.

• 한국컴퓨터정보학회논문지
• /
• 제21권5호
• /
• pp.1-10
• /
• 2016

Magnetic disks have been used for decades in auxiliary storage devices of computer systems. In recent years, the use of NAND flash memory, which is called SSD, is increased as auxiliary storage devices. However, NAND flash memory, unlike traditional magnetic disks, necessarily performs the erase operation before the write operation in order to overwrite data and this leads to degrade the system lifetime and performance of overall NAND flash memory system. Moreover, NAND flash memory has the lower endurance, compared to traditional magnetic disks. To overcome this problem, this paper proposes EPET (Enhanced Prediction and Elapsed Time) wear leveling technique, which is especially efficient to portable devices. EPET wear leveling uses the advantage of PET (Prediction of Elapsed Time) wear leveling and solves long-term system failure time problem. Moreover, EPET wear leveling further improves space efficiency. In our experiments, EPET wear leveling prolonged the first bad time up to 328.9% and prolonged the system lifetime up to 305.9%, compared to other techniques.

• 한국컴퓨터정보학회논문지
• /
• 제20권11호
• /
• pp.1-8
• /
• 2015

Flash memory has advantages in that it is fast access speed, low-power, and low-price. Therefore, they are widely used in electronics industry sectors. However, the flash memory has weak points, which are the limited number of erase operations and non-in-place update problem. To overcome the limited number of erase operations, many wear leveling techniques are studied. They use many tables storing information such as erase count of blocks, hot and cold block indicators, reference count of pages, and so on. These tables occupy some space of main memory for the wear leveling techniques. Accordingly, they are not appropriate for low-power devices limited main memory. In order to resolve it, a wear leveling technique using bit array and Bit Set Threshold (BST) for flash memory. The proposing technique reduces the used space of main memory using a bit array table, which saves the history of block erase operations. To enhance accuracy of cold block information, we use BST, which is calculated by using the number of invalid pages of the blocks in a one-to-many mode, where one bit is related to many blocks. The performance results illustrate that the proposed wear leveling technique improve life time of flash memory to about 6%, compared with previous wear leveling techniques using a bit array table in our experiment.

• 한국정보통신학회:학술대회논문집
• /
• 한국해양정보통신학회 2008년도 춘계종합학술대회 A
• /
• pp.175-178
• /
• 2008

플래시 메모리에서 읽기 작업은 속도도 빠르고 제약이 없으나 데이터 변경 시에는 덮어쓰기(overwrite)가 되지 않아 해당 데이터를 새로운 영역에 쓰고 이전에 존재하던 데이터는 무효 시켜야한다. 무효화시킨 데이터는 가비지컬렉션을 통해 지움 연산을 수행해야 한다. 지역 접근성을 가지는 데이터에 대해 가비지컬렉션을 통해 클리어 시킬 대상 목록을 선정할 때 cost-benefit 방법을 사용하면 성능은 좋으나 wear-leveling이 나빠지는 문제점이 있다. 본 연구에서는 wear-leveling을 개선하기 위해 플래시 메모리를 hot 데이터 그룹들과 cold 데이터 그룹들의 다수의 그룹으로 분할한 후 데이터를 배치하고 주기적으로 hot 데이터 영역과 cold 데이터 영역을 교체함으로써 wear-leveling과 성능을 개선하였다.

• 한국정보통신학회논문지
• /
• 제12권1호
• /
• pp.108-114
• /
• 2008

플래시 메모리는 디스크와는 달리 덮어쓰기가 불가능하므로, 새로운 데이터는 새로운 영역에 갱신이 된다. 데이터가 빈번히 변경되면 새로운 영역을 확보하기 위해 가비지 컬렉션을 통하여 데이터를 지우게 되는데, 이때 지움(erase) 연산을 수행 할 수 있는 회수가 플래시 메모리의 특성에 의해 일정 회수로 제한을 받게 되므로 플래시 메모리의 모든 블록은 고르게 쓰여지고 지워져야 한다. 그러나 지역 접근성을 가지는 데이터를 Cost-benefit 방법으로 처리하면 성능은 좋으나 wear-leveling은 매우 나빠지는 문제점이 있다. 본 논문에서는 wear-leveling을 개선하기 위해 멀티 뱅크에서 하나의 뱅크는 cold 데이터를 다른 뱅크는 hot 데이터를 할당하고, 시간이 흐름에 따라 일정주기로 cold 뱅크와 hot 뱅크를 교환하는 CB-MB(Cost Benefit between Multi Bank) 방법을 제안하고 성능을 평가하였다. CB-MB방법은 hot 데이터와 cold 데이터를 블록단위로 분리하여 관리하는 Cost-benefit방법에 비해 성능에 있어 30% 성능향상을 보이고 wear-leveling측면에서 1/3이하로 표준편차를 줄였다.

• 한국컴퓨터정보학회논문지
• /
• 제24권3호
• /
• pp.1-9
• /
• 2019

This paper presents three potential risks in an environment that simultaneously performs the garbage collection and wear leveling in NAND flash memory. These risks may not only disturb the lifespan improvement of NAND flash memory, but also impose an additional overhead of page migrations. In this paper, we analyze the interference of garbage collection and wear leveling and we also provide two theoretical considerations for lifespan prolongation of NAND flash memory. To prove two solutions of three risks, we construct a simulation, based on DiskSim 4.0 and confirm realistic impacts of three risks in NAND flash memory. In experimental results, we found negative impacts of three risks and confirmed the necessity for a coordinator module between garbage collection and wear leveling for reducing the overhead and prolonging the lifespan of NAND flash memory.

• 한국컴퓨터정보학회논문지
• /
• 제22권5호
• /
• pp.1-9
• /
• 2017

Recently, flash memory has been in a great demand from embedded system sectors for storage devices. However, program/erase (P/E) cycles per block are limited on flash memory. For the limited number of P/E cycles, many wear leveling techniques are studied. They prolonged the life time of flash memory using information tables. As one of the techniques, block erase table (BET) method using a bit array table was studied for embedded devices. However, it has a disadvantage in that performance of wear leveling is sharply low, when the consumption of memory is reduced. To solve this problem, we propose a novel wear leveling technique using Sampling-based Block Erase Table (SBET). SBET relates one bit of the bit array table to each block by using exclusive OR operation with round robin function. Accordingly, SBET enhances accuracy of cold block information and can prevent to decrease the performance of wear leveling. In our experiment, SBET prolongs life time of flash memory by up to 88%, compared with previous techniques which use a bit array table.

• 한국정보통신학회논문지
• /
• 제13권2호
• /
• pp.315-320
• /
• 2009

플래시 메모리는 데이터 변경 시에 덮어쓰기가 되지 않아 해당 데이터를 새로운 영역에 쓰기 이전에 존재하던 데이터는 무효화시켜야 하고 가비지 컬렉션 시 소거해야 한다. 플래시 메모리의 빠른 발전속도에 힘입어 플래시메모리의 용량은 급속도로 증가하고 있다. 플래시 메모리의 용량이 대용량화됨에 따라 소거대상 블록을 선택할 때 전체 플래시 메모리를 대 상으로 탐색을 실시하면 CPU의 수행시간이 많이 증가하는 문제점이 있다. 이 단점을 개선하기 위해 플래시 메모리를 그룹으로 분할하여 관리하고 소거대상 블록을 선택할 때 해당 그룹을 대상으로 탐색을 수행한다. 접근 지역성을 가지는 작업부하에 대해 hot 데이터는 hot 그룹에 배치하고, cold 데이터는 cold 그룹에 배치하여 그룹 내에서의 wear-leveling을 개선하고, 주기적으로 hot 그룹의 역할과 cold 그룹의 역할을 교환하여 전체플래시 메모리의 wear-leveling과 성능을 개선하였다.

• 한국정보과학회:학술대회논문집
• /
• 한국정보과학회 2008년도 한국컴퓨터종합학술대회논문집 Vol.35 No.1 (A)
• /
• pp.331-332
• /
• 2008