• Journal of the Korea Academia-Industrial cooperation Society
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• v.8 no.6
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• pp.1369-1375
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• 2007

The recent, a large capacity of telecommunication networks is required in order to it is in proportion to capacity of information communication increase and to satisfy a demand because of the demand about Internet, a multimedia service of internet, Video of internet protocol(VoIP), Audio/Video streaming. As a result, DWDM(Dense Wavelength Division Multiplexing)technologies are emerging to be a prevailing the method of solving it without additional optical fiber network building and high-speed equipment. Therefore this thesis proposed the optical filter of fiber/multilayer slab coupled structure combining it to multilayer slab waveguide by polishing the cladding of one side of fiber to design the optical filter having these functions. When a separation distance of fiber and slab was $3{\mu}m$, The optical filter proposed as the simulation result was satisfied with a DWDM filter characteristic with FWHM of 0.1nm on TM mode and TE mode as 32nm polarization independence in a communication window of $1.3{\mu}m$ when center wavelength was each ${\lambda}_0=1.274755{\mu}m$ and ${\lambda}_0=1.30591{\mu}m$.

• Journal of the Korean Society of Radiology
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• v.6 no.3
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• pp.207-215
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• 2012

As one of photo dynamic therapies, the existing LED photo irradiation method with 635 nm continuous wave has most frequently been used for acne treatment, it suffered from a low energy efficiency and generation of a large amount of heat in tissues requiring improvement measures. In this thesis, a LED photo irradiation system for acne treatment has been designed using PWM(Pulse Width Modulation) mode to enhance the energy efficiency and prevent thermal destruction in tissues. System configuration consisting largely of timer module, PWM module, and photo transfer device has been designed with the use of 1 W LED at a wavelength of 660 nm for the photo transfer device to increase skin penetration depth for treatment of acne. Frequency and wave form generated by using PWM control was verified along with confirmation of output energy of 660 nm LED and surface temperatures of tissues, followed by evaluation of stable energy outputs and stability of tissues. The results indicated that whereas power loss was high and thermal destruction in tissues was exhibited when C.W mode was used to obtain the optical energy of 1 W LED at a wavelength of 660 nm for acne treatment, realization of PWM mode allowed lowering of power consumption for LED through pulse width modulation, and no occurrence of thermal destruction in tissues, suggesting that PWM mode is safer and more effective for treatment of acne than C.W mode.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.173-173
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• 2010

Recently, a patterned sapphire substrate (PSS) has been intensively used as one of the effective ways to reduce the dislocation density for the III-nitride epitaxial layers aiming for the application of high-performance, especially high-brightness, light-emitting diodes (LEDs). In this paper, we analyze the growth kinetics of the atoms and crystalline quality for the undopped-GaN depending on the facets of the pattern fabricated on a sapphire substrate. The effects of the PSS on the device characteristics of InGaN/GaN LEDs were also investigated. Several GaN samples were grown on the PSS under the different growth conditions. And the undoped-GaN layer was grown on a planar sapphire substrate as a reference. For the (002) plane of the undoped-GaN layer, as an example, the line-width broadening of the x-ray diffraction (XRD) spectrum on a planar sapphire substrate is 216.0 arcsec which is significantly narrower than that of 277.2 arcsec for the PSS. However, the line-width broadening for the (102) plane on the planar sapphire substrate (363.6 arcsec) is larger than that for the PSS (309.6 arcsec). Even though the growth parameters such as growth temperature, growth time, and pressure were systematically changed, this kind of trend in the line-width broadening of XRD spectrum was similar. The emission wavelength of the undoped-GaN layer on the PSS was red-shifted by 5.7 nm from that of the conventional LEDs (364.1 nm) under the same growth conditions. In addition, the intensity for the GaN layer on the PSS was three times larger than that of the planar case. The spatial variation in the emission wavelength of the undoped-GaN layer on the PSS was statistically ${\pm}0.5\;nm$ obtained from the photoluminescence mapping results throughout the whole wafer. These results will be discussed in terms of the mixed dislocation depending on the facets and the period of the patterns.

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1275-1277
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• 1995

We designed and constructed an extremly high power s-band traveling wave resonator for the test of high power microwave components using 80MW pulsed klystron with $4{\mu}s$ pulse width. The 10dB directional coupler for the input power coupling was used, and the ring consists of phase shifter, tuner, H-band, and other microwave components. The designed total electrical length of the system is 10 times of the waveguide wavelength, ${\lambda}_g$=15.3cm, and the measured total insertion loss is 0.15dB. The low power test measurment showed the power multiplication of 14.69. The design goal is to achieve the peak power of 300MW, pulse width $4{\mu}s$ with 30 pulse repetition rate. In this article we discuss the treveling wave resonant ring constructed at the PAL laboratory together with the test results.

• Journal of Electrical Engineering and Technology
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• v.7 no.4
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• pp.576-581
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• 2012

A 23 W continuous wavelength $CO_2$ laser system exited by a high-frequency LCC resonant converter is adapted to cut a biodegradable rope fabricated with polybutylene succinate. As the biodegradable rope consists of three twisted strands, the thickness changes relative to the position of the laser beam and we thus propose a method to determine exact cutting depth. In order to obtain the parameters related to the rope cutting, the experimental and theoretical cutting depths are compared and analyzed for a range of laser heat sources. The melted thickness and groove width of the cut biodegradable rope are also examined. The proposed theoretical cutting depth depends on the incident power and target velocity ratio. From these experimental results, the biodegradable rope with a diameter of 22 mm can be cut with a heat source of 50 J/cm resulting in a melted thickness of 1.96 mm and a groove width of 0.65 mm. The laser system is shown to be perfect tool for the processing of biodegradable rope without the occurrence of raveling.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2004.10a
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• pp.590-595
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• 2004

The shape and size variations of the nanopatterns produced on a positive photoresist using a near-field scanning optical microscope(NSOM) are investigated with respect to the process variables. A cantilever type nanoprobe having a 100nm aperture at the apex of the pyramidal tip is used with the NSOM and a He-Cd laser at a wavelength of 442nm as the illumination source. Patterning characteristics are examined for different laser beam power at the entrance side of the aperture( $P_{in}$ ), scan speed of the piezo stage(V), repeated scanning over the same pattern, and operation modes of the NSOM(DC and AC modes). The pattern size remained almost the same for equal linear energy density. Pattern size decreased for lower laser beam power and greater scan speed, leading to a minimum pattern width of around 50nm at $P_{in}$ =1.2$\mu$W and V=12$\mu$m/. Direct writing of an arbitrary pattern with a line width of about 150nm was demonstrated to verify the feasibility of this technique for nanomask fabrication. Application on high-density data storage using azopolymer is discussed at the end.

• The Journal of the Acoustical Society of Korea
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• v.13 no.6
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• pp.45-49
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• 1994

In this paper, photoacoustic image processing system was constructed by using 2W CW $CO_{2}$ laser of $10.6{\mu}m$ wavelength and PZT 5A acoustic transducer. Stainless steel of 5mm thickness was used as a sample in experiment. Three line cracks of $50{\mu}m$ in each width and depth were made by using plasma on the surface of the sample. Also, each gap among their lines was $200{\mu}m$ and $300{\mu}m$ in width. In the scan range of $2.2mm\times2mm$ including surface defects, a good image of $50{\mu}m$ resolution had been shown when modulation frequency of CW laser was 100Hz.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.11
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• pp.76-82
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• 1997

The characteristics of optical waeguides and IDT electrodes fabricated for acousto-optic tunable filters (AOTE) used for optical communications were analyzed. A $Ti:LiNbO_3$ in-diffusion method was employed for the formation of the optical waveguide with a dimension of width $8\mu\textrm{m}$, length $30000\mu\textrm{m}$, and thickness $1150{\AA}$. The diffusion was carried at $1050^{\circ}C$ for 8 houss to pattern the optical waveguide with Ti. The resulted waveguide exhibited a single mode at a 1550nm wavelength range and its propagation loss was less than 0.5dB/cm. The width of IDT, with 10 SAW periods, was $5000\mu\textrm{m}$, S11 reflection characteristics and impedances of th eelectrodes deposited with Au were analyzed using a network analyzer; $48.1\Omega$ at th ecenter frquency of 193MHz for Au deposition thickness of $1500{\AA}$ and $50.7\Omega$ at the center frequency of 192MHz for au deposition thickness of $1600{\AA}$.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.15-15
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• 2011

Atom-thick graphene membrane and nano-sized graphene objects (NGOs) hold substantial potential for applications in future molecular-scale integrated electronics, transparent conducting membranes, nanocomposites, etc. To realize this potential, chemical properties of graphene need to be understood and diagnostic methods for various NGOs are also required. To meet these needs, chemical properties of graphene and optical diagnostics of graphene nanoribbons (GNRs) have been explored by Raman spectroscopy, AFM and STM scanning probes. The first part of the talk will illustrate the role of underlying silicon dioxide substrates and ambient gases in the ubiquitous hole doping of graphene. An STM study reveals that thermal annealing generates out-of-plane deformation of nanometer-scale wavelength and distortion in $sp^2$ bonding on an atomic scale. Graphene deformed by annealing is found to be chemically active enough to bind molecular oxygen, which leads to a strong hole-doping. The talk will also introduce Raman spectroscopy studies of GNRs which are known to have nonzero electronic bandgap due to confinement effect. GNRs of width ranging from 15 nm to 100 nm have been prepared by e-beam lithographic patterning of mechanically exfoliated graphene followed by oxygen plasma etching. Raman spectra of narrow GNRs can be characterized by upshifted G band and strong disorder-related D band originating from scattering at ribbon edges. Detailed analysis of the G, D, and 2D bands of GNRs proves that Raman spectroscopy is still a reliable tool in characterizing GNRs despite their nanometer width.

• Transactions of Materials Processing
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• v.13 no.3
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• pp.285-289
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• 2004

Micro tensile test specimens of thin film single crystal silicon for the most useful structural materials in MEMS (Micro Electro Mechanical System) devices were fabricated using SOI (Silicon-on-Insulator) wafers and MEMS processes. Dimensions of micro tensile test specimens were thickness of $7\mu\textrm{m}$, width of 50~$350\mu\textrm{m}$, and length of 2mm. Top and bottom silicon were etched using by deep RIE (Reactive Ion Etching). Thin film aluminum markers on testing region of specimens with width of $5\mu\textrm{m}$, lengths of 30~$180\mu\textrm{m}$ and thickness of 200 nm for measuring tensile strain were fabricated by aluminum wet etching method. Fabricated side wall angles of aluminum marker were about $45^{\circ}~50^{\circ}$. He-Ne laser with wavelength of 633nm was used for checking fringed patterns.