• Title/Summary/Keyword: Wavelength independent

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Can AI-generated EUV images be used for determining DEMs of solar corona?

  • Park, Eunsu;Lee, Jin-Yi;Moon, Yong-Jae;Lee, Kyoung-Sun;Lee, Harim;Cho, Il-Hyun;Lim, Daye
    • The Bulletin of The Korean Astronomical Society
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    • v.46 no.1
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    • pp.60.2-60.2
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    • 2021
  • In this study, we determinate the differential emission measure(DEM) of solar corona using three SDO/AIA EUV channel images and three AI-generated ones. To generate the AI-generated images, we apply a deep learning model based on multi-layer perceptrons by assuming that all pixels in solar EUV images are independent of one another. For the input data, we use three SDO/AIA EUV channels (171, 193, and 211). For the target data, we use other three SDO/AIA EUV channels (94, 131, and 335). We train the model using 358 pairs of SDO/AIA EUV images at every 00:00 UT in 2011. We use SDO/AIA pixels within 1.2 solar radii to consider not only the solar disk but also above the limb. We apply our model to several brightening patches and loops in SDO/AIA images for the determination of DEMs. Our main results from this study are as follows. First, our model successfully generates three solar EUV channel images using the other three channel images. Second, the noises in the AI-generated EUV channel images are greatly reduced compared to the original target ones. Third, the estimated DEMs using three SDO/AIA images and three AI-generated ones are similar to those using three SDO/AIA images and three stacked (50 frames) ones. These results imply that our deep learning model is able to analyze temperature response functions of SDO/AIA channel images, showing a sufficient possibility that AI-generated data can be used for multi-wavelength studies of various scientific fields. SDO: Solar Dynamics Observatory AIA: Atmospheric Imaging Assembly EUV: Extreme Ultra Violet DEM: Diffrential Emission Measure

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Optical Properties of InAs Quantum Dots Grown by Using Indium Interruption Growth Technique (Indium Interruption Growth법으로 성장한 InAs 양자점의 광학적 특성)

  • Lee, Hi-Jong;Ryu, Mee-Yi;Kim, Jin-Soo
    • Journal of the Korean Vacuum Society
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    • v.18 no.6
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    • pp.474-480
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    • 2009
  • We have investigated optical properties of InAs quantum dots (QDs) grown on GaAs (100) substrate by molecular beam epitaxy, by means of photoluminescence (PL) and time-resolved PL spectroscopy. InAs QDs were grown by using In interruption growth technique, in which the In flux was periodically interrupted by a closed In shutter during InAs QDs growth. The shutter of In source was opened for 1 s and then closed for 0, 9, 19, 29, or 39 s. This growth sequence was repeated 30 times during QDs growth. For each sample, the total amount of In contributing to the growth was the same (30 s) but total growth time was varied during the InAs growth. As the In interruption time is increased from 0 to 19 s, the PL peak position of the QDs is red-shifted from 1096 to 1198 nm, and the PL intensity is increased. However, the PL peak is unchanged and the intensity is decreased as the In interruption time is increased further to 39 s. The PL decay times measured at the PL peak position for all the InAs QDs are independent on the QD growth conditions and showed about 1 ns. The red-shift of PL peak and the increase of PL intensity can be explained due to increased QD size and the enhancement in the migration of In atoms using In interruption technique. These results indicated that the size and shape of InAs QDs can be controlled by using In interruption growth technique. Thus the emission wavelength of the InAs QDs on GaAs substrate can also be controlled.

Oxidation of Organic Compounds through the Electrochemical Reaction Using $TiO_{2}$ Photocatalytic Membranes ($TiO_{2}$ 광촉매 막의 전기화학 반응에 의한 유기물의 산화)

  • 현상훈;이기홍
    • Membrane Journal
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    • v.6 no.2
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    • pp.101-108
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    • 1996
  • The oxidation/degradation efficiency of formic acid through the photoelectrochemical reaction has been investigated as a basic research in order to develope the process for degrading toxic organic compounds dissolved in water. A $TiO_{2}$ photoelectro-membrane reactor for purification of water, in which filtration as well as photoelectrocatalytic oxidation of organic compounds could be carried out simultaneously, was developed. Porous $SnO_{2}$ tubes prepared by slip casting and commercial porous stainless steel tubes, being electrically conductive, were used as not only supports but also working electrodes. The UV light with the wavelength of 365 nm was applied as a light source for photocatalytic reactions. The photoelectrocatatytic composite membranes were prepared by coating the support surface with the $TiO_{2}$ sol of pH 1.45. The oxidation efficiency of formic acid increased with the reaction time and the applied voltage, but was almost independent of the solution flux. The results showed that more than 90% of formic acid could he dograded at 27V using the $TiO_{2}$/stainless steel composite membrane, while about 77% in case of the $TiO_{2}/SnO_{2}$ Composite membrane. It was also concluded that the oxidation efficiencies of formic acid could be significantly improved by about 6~7 times by the photoelectrochemical reaction in comparison with those by the photocatalytic reaction only.

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A Rapid Method for Estimating the Levels of Urinary Thiobarbituric Acid Reactive Substances for Environmental Epidemiologic Survey

  • Kil, Han-Na;Eom, Sang-Yong;Park, Jung-Duck;Kawamoto, Toshihiro;Kim, Yong-Dae;Kim, Heon
    • Toxicological Research
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    • v.30 no.1
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    • pp.7-11
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    • 2014
  • Malondialdehyde (MDA), used as an oxidative stress marker, is commonly assayed by measuring the thiobarbituric acid reactive substances (TBARS) using HPLC, as an indicator of the MDA concentration. Since the HPLC method, though highly specific, is time-consuming and expensive, usually it is not suitable for the rapid test in large-scale environmental epidemiologic surveys. The purpose of this study is to develop a simple and rapid method for estimating TBARS levels by using a multiple regression equation that includes TBARS levels measured with a microplate reader as an independent variable. Twelve hour urine samples were obtained from 715 subjects. The concentration of TBARS was measured at three different wavelengths (fluorescence: ${\lambda}-_{ex}$ 530 nm and ${\lambda}-_{em}$ 550 nm; ${\lambda}-_{ex}$ 515 nm and ${\lambda}-_{em}$ 553 nm; and absorbance: 532 nm) using microplate reader as well as HPLC. 500 samples were used to develop a regression equation, and the remaining 215 samples were used to evaluate the validity of the regression analysis. The induced multiple regression equation is as follows: TBARS level (${\mu}M$) = -0.282 + 1.830 ${\times}$ (TBARS level measured with a microplate reader at the fluorescence wavelengths ${\lambda}-_{ex}$ 530 nm and ${\lambda}-_{em}$ 550 nm, ${\mu}M$) -0.685 ${\times}$ (TBARS level measured with a microplate reader at the fluorescence wavelengths ${\lambda}-_{ex}$ 515 nm and ${\lambda}-_{em}$ 553 nm, ${\mu}M$) + 0.035 ${\times}$ (TBARS level measured with a microplate reader at the absorbance wavelength 532 nm, ${\mu}M$). The estimated TBARS levels showed a better correlation with, and are closer to, the corresponding TBARS levels measured by HPLC compared to the values obtained by the microplate method. The TBARS estimation method reported here is simple and rapid, and that is generally in concordance with HPLC measurements. This method might be a useful tool for monitoring of urinary TBARS level in environmental epidemiologic surveys with large sample sizes.

Growth and Scintillation Characteristics of CsI(Br) Single Crystals (CsI(Br) 단결정의 육성과 섬광특성)

  • Oh, M.Y.;Jung, Y.J.;Lee, W.G.;Doh, S.H.;Kang, K.J.;Kim, D.S.;Kim, W.;Kang, H.D.
    • Journal of Sensor Science and Technology
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    • v.9 no.5
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    • pp.341-349
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    • 2000
  • CsI(Br) single crystals doped with 1, 3, 5 or 10 mole% $Br^-$ ions, as an activator, were grown by Czochralski method. The lattice structure of grown CsI(Br) single crystal was bcc and its lattice constant was $4.568\;{\AA}$. The absorption edge of the CsI(Br) single crystals was observed at 243 nm. The spectral range of the luminescence excited by 243 nm of wavelength was $300{\sim}600\;nm$, and its peak emission appeared at 440 nm. The luminescence intensity was maximum when CsI(Br) was doped with 3 mole % $Br^-$ ions. The energy resolutions of the CsI(Br) scintillator doped with 3 mole % $Br^-$ ions were 15.0% for $^{137}Cs$(662 keV), 13.1% for $^{54}Mn$(835 keV), and 18.0% and 6.3% for $^{22}Na$(511 keV and 1275 keV), respectively. The decay curves had fast and slow components, and the fast component was about 41 ns independent on the concentration of the $Br^-$ ions. The time resolution of CsI(Br) scintillators decreased with increasing of the concentration of $Br^-$ ions.

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Improvement of Microphone Away Performance in the Low Frequencies Using Modulation Technique (변조 기법을 이용한 마이크로폰 어레이의 저주파 대역 특성 개선)

  • Kim, Gi-Bak;Cho, Nam-Ik
    • Journal of the Institute of Electronics Engineers of Korea SP
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    • v.42 no.4 s.304
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    • pp.111-118
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    • 2005
  • In this paper, we employ the modulation technique for improving the characteristics of beamformer in the low frequencies and thus improving the overall noise reduction performance. In the 1-dimensional uniform linear microphone arrays, we can suppress the narrowband noise component using the delay-and-sum beamforming. But, for the wideband noise signal, the delay-and-sum beamformer does not work well for the reduction of low frequency component because the inter-element spacing is usually set to avoid spatial aliasing at high frequencies. Hence, the beamwidth is not uniform with respect to each frequency and it is usually wider at the low frequencies. In order to obtain the beamwidth independent of frequencies, subarray systems[1][2][3][4] and multi-beamforming[5] have been proposed. However these algorithms need large space and more microphones since they are based on the theory that the size of the array is proportional to the wavelength of the input signal. In the proposed beamformer, we reduce the low frequency noise by using modulation technique that does not need additional sensors or non-uniform spacing. More Precisely, the array signals are split into subbands, and the low frequency components are shifted to high frequencies by modulation and reduced by the delay-and-sum beamforming techniques with small size microphone array. Experimental results show that the proposed technique Provides better performance than the conventional ones, especially in the low frequency band.

Identification of Foreign Objects in Soybeans Using Near-infrared Spectroscopy (근적외선 분광법을 이용한 콩과 이물질의 판별)

  • Lim, Jong-Guk;Kang, Sukwon;Lee, Kangjin;Mo, Changyeon;Son, Jaeyong
    • Food Engineering Progress
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    • v.15 no.2
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    • pp.136-142
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    • 2011
  • The objective of this research was to classify intact soybeans and foreign objects using near-infrared (NIR) spectroscopy. Intact soybeans and foreign objects were scanned using a NIR spectrometer equipped with scanning monochromator. NIR spectra of intact soybeans and foreign objects in the wavelength range from 900 to 1800 nm were collected. The classification of intact soybeans and foreign objects were conducted by using partial least-square discriminant analysis (PLS-DA) and soft independent modelling of class analogy (SIMCA) multivariate methods. Various types of data pretreatments were tested to develop the classification models. Intact soybeans and foreign objects were successfully classified by the PLS-DA prediction model with mean normalization pretreatment. These results showed the potential of NIR spectroscopy combined with multivariate analysis as a method for classifying intact soybeans and foreign objects.

Effect of Deposition and Heat Treatment Conditions on the Electrical and Optical Properties of AZO/Cu/AZO Thin Film (증착 및 열처리 조건에 따른 AZO/Cu/AZO 박막의 전기적·광학적 특성 평가)

  • Chan-Young Kim;Ha-Eun Lim;Gaeun Yang;Sukjeang Kwon;Chan-Hee Kang;Sang-Chul Lim;Taek Yeong Lee
    • Korean Journal of Materials Research
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    • v.33 no.4
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    • pp.142-150
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    • 2023
  • AZO/Cu/AZO thin films were deposited on glass by RF magnetron sputtering. The specimens showed the preferred orientation of (0002) AZO and (111) Cu. The Cu crystal sizes increased from about 3.7 nm to about 8.5 nm with increasing Cu thickness, and from about 6.3 nm to about 9.5 nm with increasing heat treatment temperatures. The sizes of AZO crystals were almost independent of the Cu thickness, and increased slightly with heat treatment temperature. The residual stress of AZO after heat treatment also increased compressively from -4.6 GPa to -5.6 GPa with increasing heat treatment temperature. The increase in crystal size resulted from grain growth, and the increase in stress resulted from the decrease in defects that accompanied grain growth, and the thermal stress during cooling from heat treatment temperature to room temperature. From the PL spectra, the decrease in defects during heat treatment resulted in the increased intensity. The electrical resistivities of the 4 nm Cu film were 5.9×10-4 Ω·cm and about 1.0×10-4 Ω·cm for thicker Cu films. The resistivity decreased as the temperature of heat treatment increased. As the Cu thickness increased, an increase in carrier concentration resulted, as the fraction of AZO/Cu/AZO metal film increased. And the increase in carrier concentration with increasing heat treatment temperature might result from the diffusion of Cu ions into AZO. Transmittance decreased with increasing Cu thicknesses, and reached a maximum near the 500 nm wavelength after being heat treated at 200 ℃.