• Korean Journal of Optics and Photonics
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• v.7 no.2
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• pp.96-100
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• 1996

Agfa 8E75 HD film is used to fabricate a film-type dichromated gelatin holographic combiner. The swelling factor of gelatin is controlled to increase the refractive-index modulation of hologram during the pre-processing steps. The characteristics of the reconstructed wavelength and the angular bandwidth are compared with those obtained with Kodak 649F plate.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.10a
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• pp.188-191
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• 2005

A common feature in various methods of optical interferometry for absolute distance measurements is the use of multiple monochromatic light components either in sequence or in parallel at the same time. Two or multiple wavelength synthesis has been studied though its performance is vulnerable to the frequency instability of the light source. Recently continuous frequency modulation is considered a promising method with availability of wide band tunable diode lasers, which also have frequency instability errors. We can lock frequencies of these third-party light sources to the modes of the femtosecond laser which is stabilized to the precision of the standard radio frequency. To this end, we have stabilized all the modes of the femtosecond laser to the atomic frequency standard by using powerful tools of frequency-domain laser stabilization.

• Current Optics and Photonics
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• v.8 no.2
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• pp.156-161
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• 2024

Recently, a new kind of optical multiplexing called optical-receiver-mode (ORM)-division multiplexing (ORMDM) has been proposed, in which an optical channel is a linear sum of ORM subchannels modulated independently. Using coherent-optical (CO) techniques, it has been reported that COORMDM communication systems can have very high spectral efficiencies (SEs). To estimate the SEs of CO-ORMDM communication systems, we introduce a new method of crosstalk analysis. Using this method, we can allocate quadrature-amplitude-modulation (QAM) codes and QAM step sizes unevenly over ORM subchannels to obtain higher SEs. With 50 Gaussian ORMs, we obtain a SE of up to 15.29 bit s^-1 Hz^-1.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.220-220
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• 2013

Surface-normal transmission electro-absorption modulator (EAM) are attractive for high-definition (HD) three-dimensional (3D) imaging application due to its features such as small system volume and simple epitaxial structure [1,2]. However, EAM in order to be used for HD 3D imaging system requires uniform modulation performance over large area. To achieve highly uniform modulation performance of EAM at the operating wavelength of 850 nm, it is extremely important to remove the GaAs substrate over large area since GaAs material has high absorption coefficient below 870 nm which corresponds to band-edge energy of GaAs (1.424 eV). In this study, we propose and experimentally demonstrate a transmission EAM in which highly selective backside etching methods which include lapping, dry etching and wet etching is carried out to remove the GaAs substrate for achieving highly uniform modulation performance. First, lapping process on GaAs substrate was carried out for different lapping speeds (5 rpm, 7 rpm, 10 rpm) and the thickness was measured over different areas of surface. For a lapping speed of 5 rpm, a highly uniform surface over a large area ($2{\times}1\;mm^2$) was obtained. Second, optimization of inductive coupled plasma-reactive ion etching (ICP-RIE) was carried out to achieve anisotropy and high etch rate. The dry etching carried out using a gas mixture of SiCl4 and Ar, each having a flow rate of 10 sccm and 40 sccm, respectively with an RF power of 50 W, ICP power of 400 W and chamber pressure of 2 mTorr was the optimum etching condition. Last, the rest of GaAs substrate was successfully removed by highly selective backside wet etching with pH adjusted solution of citric acid and hydrogen peroxide. Citric acid/hydrogen peroxide etching solution having a volume ratio of 5:1 was the best etching condition which provides not only high selectivity of 235:1 between GaAs and AlAs but also good etching profile [3]. The fabricated transmission EAM array have an amplitude modulation of more than 50% at the bias voltage of -9 V and maintains high uniformity of >90% over large area ($2{\times}1\;mm^2$). These results show that the fabricated transmission EAM with substrate removed is an excellent candidate to be used as an optical shutter for HD 3D imaging application.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.12 no.2
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• pp.328-335
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• 2008

The system performance of NRZ format in WDM transmission system with lumped dispersion management(DM) and optical phase conjugator(OPC) is compared with that of RZ format. It is confirmed that eye opening penalty(EOP) of both NRZ and RZ format in WDM transmission system having lumped DM combined with OPC are greatly improved than those in WDM system with only OPC. The optimal net residual dispersion(NRD) in the case of RZ format is decided to so small value that path-averaged dispersion coefficient become almost zero, while that in the case of NRZ format is decided to larger value, for the best improvement of overall WDM channels. It is also confirmed that EOP in the case of RZ format is more improved than that in the case of NRZ format in lumped DM with optimal NRD. This is resulted from that lumped DM combined with OPC suppress the signal distortion due to intrachannel four-wave mixing(IFWM) and intrachannel cross phase modulation(IXPM). Consequently, lumped DM combined with OPC proposed in this paper is effective technique to mitigate intrachannel nonlinearities in WDM transmitting RZ format.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.43 no.5 s.347
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• pp.35-44
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• 2006

Reflective semiconductor optical amplifiers(R-SOAs) were designed with high gain, wide optical bandwidth, high thermal reliability and wide modulation bandwidth in TO-can package for the transmitter of wavelength division multiplexed-passive optical network(WDM-PON) application. Double trench structure and current block layer were introduced in designing the active layer of R-SOA to enable high speed modulation. The injection power requirement and the viable temperature range of WDM-PON system are experimentally analysed in based on Amplified Spontaneous Emission(ASE)-injected R-SOAs. The effect of the different injection spectrum in the gain-saturated R-SOA was experimentally characterized based on the measurements of excessive intensity noise, Q factor, and BER. The proposed spectral pre-composition method reduces the bandwidth of injection source below the AWG bandwidth and thereby avoids spectrum distortion impeding the intensity noise reduction originated from the amplitude squeezing.

• Journal of the Korean Vacuum Society
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• v.15 no.1
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• pp.24-30
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• 2006

Integrated cavity output spectroscopy(ICOS) is a simple, non-intrusive absorption measurement technique that can detect and quantify trace-level gas species. The spectral absorbance of a gas is quantified from the integrated optical output of the modulated high-finesse cavity containing the sample which is irradiated by a wavelength-swept laser source. We constructed an experimental setup by using a tunable single mode external cavity diode laser operating at the wavelength near 765 nm and a Fabry-Perot cavity with length modulation achieved by a piezoelectric transducer where one of the cavity mirrors sat on. In the experiment performed on minute oxygen gas at the wave-length near 764.5nm, we demonstrated the minimum detectable absorption of $8.45\times10^{-8}cm^{-1}$.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.3
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• pp.60-73
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• 1997

By introducing a compressive-strained quanternary InGaAsP quantum-wells instead of a conventional ternary InGaAs quantum-wells in 1.55.mu.m DFB-LD, the lasing performances canb e improved and the problems caused by the thickness non-uniformity and the compositional abruptness among the hetero-interpaces canb e relaxed. In this paper, we investigated an iptimum InGaAsP/InGaAsP multiple-quantum-well(MQW) structure as an active layer in a direct-modulated 1.55.mu. DFB-LD from the view point of threshold current, chirping charcteristics, and resonance frequency. The optimum compressive-strained MQW structure was revealed as InGaAsP/InGaAsP structure with strain amount of about 1.2%, number of wells $N_{w}$ of 7, well width $L_{w}$ of 58.agns.. The threshold current density J of 500A/c $m^{2}$, the linewidth enhancement factor a of 1.8, and differential resonance frequency of d $f_{r}$/d(I-I)$^{1}$2/=2GHz/(mA)$^{1}$2/(atI=2 $I_{th}$) were expected in 1.55.mu.m .gamma./4-shifted DFB-LD with the cavity length of 400.mu.m long and kL value of 1.25. These values are considerably improved ones compared to those of 1.55um DFB-LD with InGaAs/InGaAsP MQW which have enhancement factor and the resonance frequence frequency by the detuning of lasing wavelength and gain-peak wavelength. It was found that the linewidth enhancement factor of 20% and differential resonance frequency of 35% without the degradation of the threshold current density could be enhanced in the range of -15nm~-20nm detuning which can be realized by controlling the thickness and Incomposition of InGaAsP well. well.and Incomposition of InGaAsP well. well.

• Current Optics and Photonics
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• v.2 no.3
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• pp.241-249
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• 2018

We report a midinfrared dual-field-of-view (FOV) optical system design for an airborne electro-optical targeting system. To achieve miniaturization and weight reduction of the system, it has a common aperture and fore-optics for three different spectral wavelength bands: an electro-optic (EO) band ($0.6{\sim}0.9{\mu}m$), a midinfrared (IR) band ($3.6{\sim}4.9{\mu}m$), and a designation laser wavelength ($1.064{\mu}m$). It is free to steer the line of sight by rotating the pitch and roll axes. Our design co-aligns the roll axis, and the line of sight therefore has a fixed entrance pupil position for all optical paths, unlike previously reported dual-FOV designs, which dispenses with image coregistration that is otherwise required. The fore-optics is essentially an achromatized, collimated beam reducer for all bands. Following the fore-optics, the bands are split into the dual-FOV IR path and the EO/laser path by a beam splitter. The subsequent dual-FOV IR path design consists of a zoom lens group and a relay lens group. The IR path with the fore-optics provides two stepwise FOVs ($1.50^{\circ}{\times}1.20^{\circ}$ to $5.40^{\circ}{\times}4.32^{\circ}$), due to the insertion of two Si lenses into the zoom lens group. The IR optical system is designed in such a way that the location and f-number (f/5.3) of the cold stop internally provided by the IR detector are maintained when changing the zoom. The design also satisfies several important performance requirements, including an on-axis modulation transfer function (MTF) that exceeds 10% at the Nyquist frequency of the IR detector pitch, with distortion of less than 2%.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.3
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• pp.39-44
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• 2004

Fiber Bragg grating sensors are fabricated by core index modulation using UV laser and phasemask. Bragg wavelength of the grating is changed by the external strain. In this paper, a signal processing system of fiber Bragg grating sensor has studied in the optical wavelength domain. The system is based on the sweep semiconductor light source that consists of SLD, F-P tunable filter and etalon filter. The hysteresis effects of PZT in the F-P tunable filter are compensated. The long term measurement stability is obtained by controlling the temperature of F-P tunable filter and the SLD. We compare the strain data from fiber Bragg grating sensor and that from strain gauge at concrete hume pipe. We also get very good results for the long gauge displacement using fiber Bragg grating sensor which are identical to the data with short gauge length ordinary displacement sensor.