• 한국광학회:학술대회논문집
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• 한국광학회 1999년도 제16회 광학 및 양자전자 학술발표회Proceedings of 16th Optics and Quantum Electronics Conference, 1999
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• pp.44-45
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• 1999

• 한국광학회:학술대회논문집
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• 한국광학회 1996년도 Advance Program of 13th optics andquantum Electronics conference, 1996제13 회 광학 및 양자전자 학술 발표회 논문 요약집
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• pp.61-61
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• 1996

• 한국광학회:학술대회논문집
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• 한국광학회 1996년도 Advance Program of 13th optics andquantum Electronics conference, 1996제13 회 광학 및 양자전자 학술 발표회 논문 요약집
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• pp.60-60
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• 1996

• 한국광학회:학술대회논문집
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• 한국광학회 1997년도 Advance Program of 14th optics andquantum Electronics conference, 1997제14 회 광학 및 양자전자 학술 발표회 논문 요약집
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• pp.42-42
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• 1997

• 한국광학회:학술대회논문집
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• 한국광학회 2002년도 제13회 정기총회 및 2002년도 동계학술발표회
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• pp.34-35
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• 2002

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.67-67
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• 2012

Graphene, two-dimensional one-atom-thick planar sheet of carbon atoms densely packed in a honeycomb crystal lattice, exhibits fascinating electrical properties, such as a linear energy dispersion relation and high mobility in addition to a wide-range optical absorption and high thermal conductivity. Graphene's outstanding tensile strength allows graphene-based electronic and photonic devices to be flexible, bendable, or even stretchable. Recently many groups have reported high performance electronic and optoelectronic devices based on graphene materials, i.e. field-effect transistors, gas sensors, nonvolatile memory devices, and plasmonic waveguides, in which versatile properties of graphene materials have been incorporated into a flexible electronic or optoelectronic platform. However, there are several fundamental or technological hurdles to be overcome in real applications of graphene in electronics and optoelectronics. In this tutorial we will present a short introduction to the basic material properties and recent progresses in applications of graphene to electronics and optoelectronics and discuss future outlook of graphene-based devices.

• ETRI Journal
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• 제25권2호
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• pp.81-88
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• 2003

We designed a multimode interference (MMI) coupler to use in vertical coupling of double layered polymeric waveguides and analyzed the coupling characteristics by comparing our experimental and simulation results. We found that our proposed new structure, a stepped MMI coupler, is effective in vertical coupling between waveguide layers with a short length of MMI and has a high tolerance for the variation in the structure of an MMI coupler that can be induced as errors in the fabrication process.

• ETRI Journal
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• 제32권2호
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• pp.339-341
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• 2010

The fundamental transverse mode lasing of a hybrid laser diode is a prerequisite for efficient coupling to a single-mode silicon waveguide, which is necessary for a wavelength-division multiplexing silicon interconnection. We investigate the lasing mode profile for a hybrid laser diode consisting of silicon slab and InP/InGaAsP deep ridge waveguides. When the thickness of the top silicon is 220 nm, the fundamental transverse mode is lasing in spite of the wide waveguide width of $3.7{\mu}m$. The threshold current is 40 mA, and the maximum output power is 5 mW under CW current operation. In the case of a thick top silicon layer (1 ${\mu}m$), the higher modes are lasing. There is no significant difference in the thermal resistance of the two devices.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 춘계학술대회 논문집 디스플레이 광소자 분야
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• pp.195-196
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• 2000

A passband-flattening technique based on Fourier optics concept for phased-array wavelength router is presented. For easy control of optical power in each waveguide without phase correction, misaligned array waveguides are used. BPM simulation results indicate that flat passband is as wide as 75 % of the channel spacing with the insertion loss penalty of about 6 dB and with the crosstalk of about -28 dB.

• 한국통신학회논문지
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• 제17권5호
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• pp.442-451
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• 1992

Mach-Zehnder type GaAs elcetro-optic waveguide modulator has been designed in this paper.The modulator. Considered is based on the Mach-Zehnder interferometer configuration, consisting of two Y branch couping rib type waveguides formed in two epitaxial layers on GaAs substrate. The mode theory on waveguides and electo-optic effect of GaAs were utilized to determine the design parameters for the modulator proposed. Effective index method was applied to design the of waveguide supporting a single mode were calculated to achieve the optimized operation of the modulator. Considering interrelationships between many parameters.