• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.12 no.2
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• pp.257-267
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• 2001

This paper presents a design for a single-layer feeder waveguide array using $\pi$-junctions with the inductive wall. The feed structure consists of a single waveguide placed on the same layer as radiating waveguide and is characterized by the unit divider, called a $\pi$-junction. This $\pi$-junction with an inductive wall splits part of the power into two branchs waveguide through one coupling window, and can excite densely arrayed waveguide at equal phase and amplitude. The power dividing characteristics of the cascade of $\pi$ -junctions are analyzed by Galerkin's method of moments. The numerical results show reasonable agreement with the experimental results. From the optimum simulation results based on the feeder waveguide using $\pi$-junction, we obtained the scattering matrices of the feeder divided power at 3.95 GHz.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.27 no.5C
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• pp.506-511
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• 2002

In this paper, waveguide-based power combiner using conventional slotline-to-microstrip transition was proposed at Ka-band. The proposed 2-way and 4-way power combiner consist of waveguide-to-slotline transition, two or four slotline-to-microstrip transitions, and impedance matching networks. Their structures were simulated and optimized by 3-D FEM simulation. The 2-way power combiner showed a very low back-to-back insertion loss of 1.0 dB and return loss better than 15 dB from 25.7 GHz to 29.8 GHz except the resonant frequency. The 2-way power combining approach was extended to 4-way power combining using slotline tee junction. The 4-way power combiner showed the similar performance to that of 2-way power combiner with 2 GHz smaller bandwidth.

• ETRI Journal
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• v.33 no.5
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• pp.818-821
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• 2011

A D-band subharmonically-pumped resistive mixer has been designed, processed, and experimentally tested. The circuit is based on a $180^{\circ}$ power divider structure consisting of a Lange coupler followed by a ${\lambda}$/4 transmission line (at local oscillator (LO) frequency). This monolithic microwave integrated circuit (MMIC) has been realized in coplanar waveguide technology by using an InAlAs/InGaAs-based metamorphic high electron mobility transistor process with 100-nm gate length. The MMIC achieves a measured conversion loss between 12.5 dB and 16 dB in the radio frequency bandwidth from 120 GHz to 150 GHz with 4-dBm LO drive and an intermediate frequency of 100 MHz. The input 1-dB compression point and IIP3 were simulated to be 2 dBm and 13 dBm, respectively.