• 마이크로전자및패키징학회지
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• 제22권4호
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• pp.71-76
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• 2015

최근 Light Emitting Diode (LED)의 효율을 높이기 위한 연구가 활발히 진행 되고 있다. 특히 소자 측면에서는 수평형 LED, 수직형 LED, via-hole 구조의 수직형 LED 등의 다양한 구조가 제시되었다. 본 논문에서는 시뮬레이션을 통해 via-hole 구조의 수직형 LED의 새로운 전극 디자인을 제시하였다. 기존 Via-hole 구조의 수직형 LED의 n-contact hole 주변에 전류가 밀집되는 문제점을 해결하면서 유효 발광면적을 극대화 시켜 소자 전체에 균일한 전류를 주입할 수 있는 소자 디자인에 대해 평가하였다. 시뮬레이션 결과를 바탕으로 최적의 전극 디자인을 실제 디바이스로 제작하여 기존의 via-hole 구조의 수직형 LED와 비교 분석하였다. 최적화된 디자인이 적용된 via hole type 수직형 LED의 경우 기존 디자인에 비해 350 mA 주입시 약 0.2 V의 Forward Voltage 감소하였지만 광 출력은 비슷하여 최종적으로 4.2%의 WPE (Wall plug efficiency)가 향상됨을 보였다.

• Journal of Advanced Marine Engineering and Technology
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• 제10권2호
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• pp.156-164
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• 1986

In the case of boiling on high temperature wall, vapor film covers fully or parcially the surface. This phenomenon, film boiling or transition boiling, is very important in the surface heat treatment of metal, design of cryogenic heat exchanger and emergency cooling of nuclear reactor. Mainly supposed hydraulic-thermal accidents in nuclear reactor are LCCA (Loss of Coolant Accident) and PCM (Power-Cooling Mismatch). Recently, world-wide studies on reflooding of high temperature rod bundles after the occurrence of the above accidents focus attention on wall temperature history and required time in transient cooling process, wall superheat at rewet point, heat flux-wall superheat relationship beyond the transition boiling region, and two-phase flow state near the surface. It is considered that the further systematical study in this field will be in need in spite of the previous results in ref. (2), (3), (4). The paper is the study about the fast transient cooling process following the wall temperature excursion under the CHF (Critical Heat Flux) condition in a forced convective subcooled boiling system. The test section is a vertically arranged concentric annulus of 800 mm long and 10 mm hydraulic diameter. The inner tube, SUS 304 of 400 mm long, 8 mm I.D, and 7 mm O.D., is heated uniformly by the low voltage AC power. The wall temperature measurements were performed at the axial distance from the inlet of the heating tube, z=390 mm. 6 chromel- alumel thermocouples of 76 .mu.m were press fitted to the inner surface of the heating tube periphery. To investigate the heat transfer characteristics during the fast transient cooling process, the outer surface (fluid side) temperature and the surface heat flux are computed from the measured inner surface temperature history by means of a numerical method for inverse problems of transient heat conduction. Present cooling (boiling) curve is sufficiently compared with the previous results.

• Journal of Power Electronics
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• 제7권4호
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• pp.278-285
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• 2007

Recently, plasma display panels (PDP) have become the most promising candidate in the market for large screen size flat panel displays. PDPs have many merits such as a fast display response time and wide viewing angle. However, there are still concerns about high cost because they require complex driving circuits composed of high power switching devices to generate various voltage waveforms for three operational modes of reset, scan, and sustain. Conventional PDP driving circuits use path switches for voltage separation and a scan switch to offer a scan voltage for reset and scan operations, respectively. In addition, there exist reset switches to initialize PDPs by regulating the wall charge conditions with ramp shaped pulses, which means the necessity of specific power devices for the reset operation. Because power for the plasma discharge accompanied by a large current is transferred to a panel via path switches, high power rating switches are used for path switches. Therefore, this paper proposes a novel low-cost PDP driving scheme achieved by not only eliminating path switches but also merging the function of reset switches into other switches used for sustain or scan operations. The simulated voltage waveforms of the proposed topology and experimental results implemented in a 42-inch panel to demonstrate the validity of using a new gate driver that merges the functions of power switches are presented.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2004년도 전력전자학술대회 논문집(2)
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• pp.723-727
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• 2004

A new high-performance and low cost single switch energy recovery display driver for an AC plasma display panel (PDP) is proposed. Since it is composed of only one auxiliary power switch, two small inductors, and eight diodes compared with the conventional circuit consisting of four auxiliary power switches, two small inductors, eight power diodes, and two external capacitors, it features a much simpler structure and lower cost. Nevertheless, since the rootmean-square (RMS) value of the inductor current is very small, it also has very desirable advantages such as n low conduction loss and high efficiency. Furthermore, there are no serious voltage-drops caused by the large gas-discharge current with the aid of the discharge current compensation, which can also greatly reduce the current flowing through power switches and maintain the panel to light at n lower sustaining voltage. In addition, all main power switches are turned on under the zero-voltage switching (ZVS) and thus, the proposed circuit has a improved EMI, increased reliability, and high efficiency. Therefore, the proposed circuit will be well suited to the wall hanging PDP TV. To confirm the validity of the proposed circuit, circuit operations, features,and design considerations are presented and verified experimentally on a 6-inch PDP, 50kHz-switching frequency, and sustaining voltage 141V based prototype.

• 대한전자공학회논문지SD
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• 제44권3호
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• pp.20-25
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• 2007

본 논문에서는 $LiNbO_3$의 선택적 영역을 도메인 반전을 수행하였으며, 이를 대역변조기 및 SSB 광변조기 제작에 응용하였다. 인가전압에 대한 회로적인 응답전류를 분석 및 고려함으로써 도메인 벽의 이동속도를 정확히 제어할 수 있었다. 과도한 도메인의 벽 이동속도에 의한 도메인 반전 형상을 확인하였고, 또한 도메인 벽의 진행방향에 따라 그 속도의 차이가 발생함을 알 수 있었다. 제작된 대역변조기는 30.3 GHz를 중심주파수로 하여 5.1GHz의 3dB 대역폭을 보였고. SSB 광변조기의 변조 스펙트럼으로부터 19dBm의 5.8GHz RF 입력신호에 대해 USB가 LSB에 비해 33dB정도 억제됨을 확인할 수 있었다.

• 청정기술
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• 제21권2호
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• pp.90-95
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• 2015

디지털 미세유체 전기천공 시스템을 활용하여 미세녹조류에 대한 형질전환 실험을 통해 기존 상용화 장치 대비 높은 유전자 전달 효율과 세포 생존도를 확인하였다. 전기천공의 주요 파라미터인 인가전압 및 인가시간 변화를 주며 세포벽이 존재하는 세포종과 세포벽이 없는 세포종에 대한 비교 실험을 수행하였다. 이를 통해 식물 세포의 전기천공에서 세포벽의 역할은 단순히 유전체의 전달을 방해하는 부정적 요소로만 작용하지 않는 다는 사실을 확인하였다. 병렬화 및 온 칩 세포 배양 등을 통해 제안된 디지털 전기천공 기술이 향후 새로운 청정 형질전환 방법으로써의 가능성도 확인하였다.

• 반도체디스플레이기술학회지
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• 제13권4호
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• pp.1-5
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• 2014

The plasma density distribution in between the electrode and lateral wall of a narrow gap CCP was investigated. The plasma density distribution was obtained using single Langmuir probe, having two peaks of density distribution at the center of electrode and at the peripheral area of electrodes. The plasma density distribution was compared with the RF fluctuation of plasma potential taken from capacitive probe. Ionization reactions obtained from numerical analysis using CFD-$ACE^+$ fluid model based code. The peaks in two region for plasma density and voltage fluctuation have similar spatial distribution according to input power. It was found that plasma density distribution between the electrode and the lateral wall is closely related with the local ionization.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제50권10호
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• pp.532-535
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• 2001

The sputtering condition of Cr thin film was established in order to get Cr gate electrode having a vertical wall structure for Mo-tip FEA. In case of Mo-tip FEA which had a vertically-etched Cr gate electrode, the field enhancement factor, was relatively increased and so the field emission performance in terms of turn-on voltage, emission current and trans-conductance could be improved when compared with the devices having a tapered gate wall.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제49권1호
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• pp.59-63
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• 2000

For the Mo-tip field emitter array, the method by which the geometrical structure of the gate insulator wall could be modified in order to improve field emission properties(turn-on voltage and gate leakage current). The device having a gate insulator of complex shape, which means the combined geometrical structure with round shape made by wet etching and vertical shape made by dry etching processes, was fabricated and the field emission properties of the three kinds of devices were compared. As a result, the electric field applied to tip apex could be increased and gate leakage current could be decreased by employing the gate insulator having geometrical wall structure of mixed shape. Finally, the obtained empirical results were analyzed by simulation of electric field distribution at/near the tip apex and gate insulator using SNU-FEAT simulator.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.768-770
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• 2003

In AC PDP, since charges generated by gas discharge are accumulated on the dielectric. The dielectric is a major factor to determine cell capacitance and its memory effect is a play an important role in PDP driving. In this experiment, we have investigated the electro-optical characteristics with dielectric thickness and we have analyzed wall charge and wall voltage by Q-V energy diagram. The dielectric thickness was varied from 20 um to 50 um. As results, according to the dielectric thickness increase,cell capacitance and power consumption is reduced.