• Journal of the Korean Society of Manufacturing Process Engineers
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• v.11 no.1
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• pp.1-6
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• 2012

The polishing of silicon wafers has an important role in semiconductor manufacturing. Generally, getting a flat surface such as a mirror is the purpose of the process. The wafer surface roughness is affected by many variables such as the characteristics of the carrier head unit, operation, speed, the pad and slurry temperature. Optimum process conditions for experimental temperature, pH value, down-force, slurry ratio are investigated, time is used as a fixed factor. This study carried out a series of experiments at varying platen, chuck rpm and oscillation cpm taking particular note of the difference between the rpm and the affect it has on the surface roughness. In this experiment determine the optimum conditions for polishing silicone wafers.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 2004.04a
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• pp.27-33
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• 2004

Electro-theological fluid is recently used for the micro polishing of 3-dimensional micro-aspherical lens. It's also used for polishing small area defects on the wide flat wafer. Since ER fluid shows a behavior of viscosity changing under certain electric fields. micro polishing efficiency may be enhanced for certain cases. In this paper, a perfluorinated carbonyl fluoride oil based ER fluids was used to improve surface polishing rate and submicron-scale accuracy. As the polishing electrodes, micro size cylindrical tools had been used for maximizing the electric field. An experimental device, which was applied for micro polishing a number of wafers of 4inches in size and other workpiece. was made on a precision polishing system. It consisted of a steel electrode. a wafer fixture. l0㎃ current and DC 5㎸ power supply unit, and a controller unit. From the Experiments. the ER fluid is applicable for micro polishing of small parts.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.28 no.1
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• pp.85-91
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• 2004

The sapphire wafers for blue light emitting devices were manufactured by the implementation of the surface machining technology based on micro-tribology. This process has been performed by chemical and mechanical polishing process. The sapphire crystalline wafers were characterized by double crystal X-ray diffraction. The sample quality of sapphire crystalline wafer at surfaces has a full width at half maximum of 89 arcsec. The surfaces of sapphire wafer were mechanically affected by residual stress during the polishing process. The wave pattern of optical interference of sapphire wafer implies higher abrasion rate in the edge of the wafer than its center from the Newton's ring.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.11 no.6
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• pp.48-54
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• 2012

In recent years, developments in the semiconductor and electronic industries have brought a rapid increase in the use of large size silicon. However, for many companies, it is hard to produce 400mm or 450mm wafers, because of excesive funds for exchange the equipments. Therefore, it is necessary to investigate 300mm wafer to obtain a better efficiency and a good property rate. Polishing is one of the important methods in manufacturing of Si wafers and in thinning of completed device wafers. This research investigated the surface characteristics that apply variable machining conditions and Taguchi Method was used to obtain more flexible and optimal condition. In this study, the machining conditions have head speed, oscillation speed and polishing time. By using optimum condition, it achieves a ultra precision mirror like surface.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2002.10b
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• pp.433-434
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• 2002

Chemical mechanical polishing refers to a process by which silicon and partially-processed integrated circuits (IC's) built on silicon substrates are polished to produce planar surfaces for the continued manufacturing of IC's. Chemical mechanical polishing is done by pressing the silicon wafer, face down, onto a rotating platen that is covered by a rough polyurethane pad. During rotation, the pad is flooded with a slurry that contains nanoscale particles. The pad deforms and the roughness of the surface entrains the slurry into the interface. The asperities contact the wafer and the surface is polished in a three-body abrasion process. The contact of the wafer with the 'soft' pad produces a unique elastohydrodynamic situation in which a suction force is imposed at the interface. This added force is non-uniform and can be on the order of the applied pressure on the wafer. We have measured the magnitude and spatial distribution of this suction force. This force will be described within the context of a model of the sliding of hard surfaces on soft substrates.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.13 no.3
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• pp.53-60
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• 2004

We have developed and manufactured an experimental ultrasonic polishing machine with frequency of 20kHz at the power of vibration 1.7㎾ for effective ultrasonic polishing in processing of high hardness material. Design of the horn is performed by the FEM analysis. The following conclusions were empirically deduced through experimental results to clarify the major elements which affect the surface roughness during the ultrasonic process by following the experimental plans. The ultrasonic polishing machine has been developed in parts of structure part, ultrasonic generator, vibrator. We were able to process the high hardness material without difficulty as a result of ultrasonic polishing by utilizing the groove added step-type horn. Through analyzing by applying the experimental plans, the rotating speed of the horn was determined to be the major factor in influencing the surface roughness. In the case of ceramic, wafer, we were able to obtain good surface roughness when the feed rate and the ultrasonic output were higher. Because the load on slurry particle increases when the ultrasonic output is higher, the processed surface becomes worse in the case of optical glass.

• Proceedings of the KSME Conference
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• 2003.04a
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• pp.1014-1020
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• 2003

We have developed the ultrasonic polishing system to get super finishing that consist of machine part that can rotate and travel the main shaft with power 1.5kW, ultrasonic generator with frequency 20kHz. By using this system we were investigated the characteristics of ultrasonic polishing and deduced the major facters which affect the surface roughness by the experimental plans for three different materials such as ceramic, glass, and wafer, and so could be obtained following results. We could be obtained the excellent surface for hard-to-difficult cutting materials. The rotating speed could be found to be major factor influencing the surface roughness. In the case of ceramic and wafer, we were able to obtain good surface roughness when the feed rate and ultrasonic output is higher. In the case of glass, the surface roughness becames worse when ultrasonic output is higher because of increasing of load affacting on the particles in slurry.

• Proceedings of the KSME Conference
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• 2003.04a
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• pp.980-986
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• 2003

As the ultra precision grinding can be applied to wafering process by the refinement of the abrasive, the development of high stiffness equipment and grinding skill, the conventional wafering process which consists of lapping, etching, Ist, 2nd and 3rd polishing could be exchanged to the new process which consists of precision surface grinding, final polishing and post cleaning. Especially, the ultra precision grinding of wafer improves the flatness of wafer and the efficiency of production. Futhermore, it has been not only used in bare wafer grinding, but also applied to wafer back grinding and SOI wafer grinding. This paper focused on the effect of the wheel path density and relative velocity on the characteristic of ground wafer in in-feed grinding with cup-wheel. It seems that the variation of the parameters in radial direction of wafer results in the non-uniform surface quality over the wafer. So, in this paper, the geometric analysis on grinding process is carried out, and then, the effect of the parameters on wafer surface quality is evaluated

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.360-361
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• 2005

Rapid progress in IC fabrication technology has strong demand in polishing of silicon wafer to meet the tight specification of nanotopography and surface roughness. One of the important issues in Si CMP is the stabilization of polishing pad. If a polishing pad is not stabilized before main Si wafer polishing process, good polishing result can not be expected. Therefore, new pad must be subjected into break-in process using dummy wafers for a certain period of time to enhance its performance. After the break-in process, the main Si wafer polishing process must be performed. In this study, the characteristics of break-in process were investigated in Si wafer polishing. Viscoelastic behavior, temperature variation of pad and friction were measured to evaluate the break-in phenomenon. Also, it is found that the characteristic of the break-in seems to be related to viscoelastic behavior of pad.

• Journal of the Korean Society for Precision Engineering
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• v.17 no.1
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• pp.179-184
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• 2000

Chemical Mechanical Polishing (CMP) refers to a material removal process done by rubbing a work piece against a polishing pad under load in the presence of chemically active and abrasive containing slurry. CMP process is a combination of chemical dissolution and mechanical action. The mechanical action of CMP involves hydrodynamic behavior. The liquid slurry is trapped between the work piece and pad forming a hydrodynamic film. For the first step to understand material removal mechanism of the CMP process, the hydrodynamic analysis is done with semiconductor wafer. Three-dimensional Reynolds equation is applied to get pressure distribution of the slurry film. Shear stress distributions on the wafer surface are also analyzed