• 대한기계학회논문집A
• /
• 제27권8호
• /
• pp.1309-1316
• /
• 2003

The general dicing process cuts a semiconductor wafer to lengthwise and crosswise direction by using a rotating circular diamond blade. But products with inferior quality are produced under the influence of several parameters in dicing process such as blade, wafer, cutting water and cutting conditions. Moreover we can not apply this dicing method to GaN wafer, because the GaN wafer is harder than the other wafer such as SiO2, GaAs, GaAsP, and AlGaAs. In order to overcome this problem, development of a new dicing process and determination of dicing parameters are necessary. This paper describes a new wafer dicing method using fixed diamond scriber and precision servo mechanism and determination of several parameters - scribing depth, scribing force, scriber inclined angle, scribing speed, and factor for scriber replacement - for a new dicing machine using scriber.

• 제어로봇시스템학회논문지
• /
• 제8권5호
• /
• pp.419-424
• /
• 2002

After the patterning and probe process of wafer have been achieved, the dicing processing is necessary to separate chips from a wafer. The dicing process cuts a semiconductor wafer to lengthwise and crosswise directions to make many chips. The existing general dicing method is the mechanical cutting using a narrow circular rotating blade impregnated diamond particles or laser cutting. Inferior goods can be made by the mechanical or laser cutting unless several parameters such as blade, wafer, cutting water and cutting conditions are properly set. Moreover, we can not apply these general dicing method to that of GaN wafer, because the GaN wafer is harder than general semiconductor wafers such as GaAs, GaAsP, AIGaAs and so forth. In order to overcome these problems, this paper describes a new wafer dicing method using fixed diamond scriber and precision servo mechanism.

• 제어로봇시스템학회:학술대회논문집
• /
• 제어로봇시스템학회 2000년도 제15차 학술회의논문집
• /
• pp.222-222
• /
• 2000

The general dicing process cuts a semiconductor wafer to lengthwise and crosswise direction by using a rotating circular diamond blade. But inferior goods are made under the influence of several parameters in dicing such as blade, wafer, cutting water and cutting conditions. Moreover we can not applicable this dicing method to GaN wafer, because the GaN wafer is harder than the other wafer as GaAs. In older to overcome this problem, a new dicing process is necessary. This paper describes a new machine using scriber and precision servo mechanism in order to dice a semiconductor wafer.

• 한국정밀공학회:학술대회논문집
• /
• 한국정밀공학회 2002년도 추계학술대회 논문집
• /
• pp.164-167
• /
• 2002

The general dicing process cuts a semiconductor wafer to lengthwise and crosswise direction by using a rotating circular diamond blade. But inferior goods are made under the influence of several parameters in dicing process such as blade, wafer, cutting water and cutting conditions. Moreover we can not applicable this dicing method to GaN wafer, because the GaN wafer is harder than the other wafer such as SiO$_2$, GaAs, CaAsP, and AlCaAs. In order to overcome this problem, development of a new dicing process and determination of dicing parameters are necessary. This paper describes determination of several parameters - scribing depth, scribing force, scriber inclined angle, scribing speed, and factor for scriber replacement - for a new dicing machine using scriber.

• 한국정밀공학회지
• /
• 제17권5호
• /
• pp.70-75
• /
• 2000

After the patterning and probe process of wafer have been achieved, the dicing process is necessary to separate chips from a wafer. The dicing process cuts a wafer to lengthwise and crosswise direction to make many chips by using narrow circular rotating diamond blade. But inferior goods are made under the influence of complex dicing environment such as blade, wafer, cutting water and cutting conditions. This paper describes a monitoring algorithm using feature extraction in order to find out an instant of vibration signal change when bad dicing appears. The algorithm is composed of two steps: feature extraction and decision. In the feature extraction, two features processed from vibration signal which is acquired by accelerometer attached on blade head are proposed. In the decision. a threshold method is adopted to classify the dicing process into normal and abnormal dicing. Experiment have been performed for GaAs semiconductor wafer. Based upon observation of the experimental results, the proposed scheme shown a good accuracy of classification performance by which the inferior goods decreased from 35.2% to 12.8%.

• 한국정밀공학회지
• /
• 제20권2호
• /
• pp.218-225
• /
• 2003

The general dicing process cuts a semiconductor wafer to lengthwise and crosswise direction by using a rotating circular diamond blade. However, inferior goods may be made under the influence of several parameters in dicing process such as blade, wafer, cutting water and cutting conditions. Moreover we can not apply this dicing method to a GaN wafer, because the GaN wafer is harder than other wafers such as SiO$_2$, GaAs, GaAsP, and AlGaAs. In order to overcome this problem, development of a new dicing process and determination of dicing parameters are necessary. This paper describes determination of several parameters - scribing depth, scribing force, scriber inclined angle, scribing speed, and factor for scriber replacement - for a new dicing machine using a scriber.

• 제어로봇시스템학회논문지
• /
• 제6권6호
• /
• pp.486-491
• /
• 2000

The dicing process cuts a semiconductor wafer to lengthwise and crosswise direction by using a rotating circular diamond blade. But inferior goods are made under the influence of several parameters in dicing such as blade, wafer, cutting water and cutting conditions. This paper describes a monitoring algorithm using neural network in order to find out an instant of vibration signal change when bad dicing appears. The algorithm is composed of two steps: feature extraction and decision. In the feature extraction, five features processed from vibration signal which is acquired by accelerometer attached on blade head are proposed. In the decision, back-propagation neural network is adopted to classify the dicing process into normal and abnormal dicing, and normal and damaged blade. Experiments have been performed for GaAs semiconductor wafer in the case of normal/abnormal dicing and normal/damaged blade. Based upon observation of the experimental results, the proposed scheme shown has a good accuracy of classification performance by which the inferior goods decreased from 35.2% to 6.5%.

• 한국정밀공학회:학술대회논문집
• /
• 한국정밀공학회 1997년도 추계학술대회 논문집
• /
• pp.484-487
• /
• 1997

The dicing is a process of gaining chip from a wafer. It is done by some mechanism to lengthwise and crosswise. Here, it is focused on measuring a depth of the wafer hefore a process of the dicing. First of all, it checks a precise outer position for the wafer on table to gain the chip. Second, the xafer should he lined after Imowing how much depth, it is in out of the outer position of the wafer. Here suggests that there are a composition of mechanical system, how to measure a depth out of scriber axis, a result from testing.

• 한국정밀공학회:학술대회논문집
• /
• 한국정밀공학회 2000년도 추계학술대회 논문집
• /
• pp.729-732
• /
• 2000

The general dicing process cuts a semiconductor wafer to lengthwise and crosswise direction by using a rotating circular diamond blade. But inferior goods are made under the influence of several parameters in dicing such as blade, wafer, cutting water and cutting condition. Moreover we can not applicable this dicing method to GaN wafer, because the GaN wafer is harder than the other wafer as GaAs. In order to overcome this problem, a new dicing process is necessary. This paper describes a new machine using scriber, breaker, and precision servo mechanism in order to dice an semiconductor wafer.

• 한국공작기계학회:학술대회논문집
• /
• 한국공작기계학회 1999년도 추계학술대회 논문집 - 한국공작기계학회
• /
• pp.502-506
• /
• 1999

Recently, the miniature of electric products such as notebook, cellular-phone etc. is apparently appeared, due to the smaller size of the semiconductor chips. As the size of chip gets smaller, the circuit could be easily damaged by the slightest influence, so it is important to control the chipping generation in the process of dicing. This paper deals with chipping of the silicon wafer dicing. The relationships between the dicing force and the wafer chipping are investigated. It is confirmed that the wafer chipping increases as the dicing force increases.