• 한국정밀공학회지
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• 제16권2호통권95호
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• pp.60-67
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• 1999

Micro-fabrication techniques such as lithography and LIGA processes usually require large investment and are suitable for mass production. Therefore, there is a need for a new micro-fabrication technique that is flexible and more cost effective. In this paper a novel, economical and flexible method of producing micro-pattern on silicon wafer is presented. This method relies on selective removal of mask by mechanical cutting. Then micro-pattern is produced by chemical etching. V-shaped grooved of about 3 ${\mu}m$ wide and 2 ${\mu}m$ deep has been made on ${SiO_2}m$ coated silicon wafer with this method. This method may be utilized for making microstructures in MEMS application at low cost.

• 반도체디스플레이기술학회지
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• 제16권3호
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• pp.20-24
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• 2017

For process improvement and cutting down on expenses in solar cell industry, it is necessary to improve recycling process of wafer manufacturing. In this research, a study is introduced to develop classifier which is for recycling of abrasive. First of all, recycling process of wafer manufacturing is analyzed. And then, 3 steps of experiments such as oil removal, impurities removal and classification were executed. For the classification of slurry, a classifier is designed and manufactured. From experiments, it is verified that ultra sound vibration and flux are very important factors for classification. By experiencing the recycling processes and making devices, the technique can be initiated industry if needed such as decreasing waste and cutting down on expenses.

• 반도체디스플레이기술학회지
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• 제5권3호
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• pp.5-10
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• 2006

This paper investigates cutting qualities after laser dicing and predicts the problems that can be generated by laser dicing. And through 3 point bending test, die strength is measured and the die strength after laser dicing is compared with the die strength after mechanical sawing. Laser dicing is chiefly considered as an alternative to overcome the defects of mechanical sawing such as chipping on the surface and crack on the back side. Laser micromachining is based on the thermal ablation and evaporation mechanism. As a result of laser dicing experiments, debris on the surface of wafer is observed. To eliminate the debris and protect the surface, an experiment is done using a water soluble coating material and ultrasonic. The consequence is that most of debris is removed. But there are some residues around the cutting line. Unlike mechanical sawing, chipping on the surface and crack on the back side is not observed. The cross section of cutting line by laser dicing is rough as compared with that by mechanical sawing. But micro crack can not be seen. Micro crack reduces die strength. To measure this, 3 point bending test is done. The die strength after laser dicing decreases to a half of the die strength after mechanical sawing. This means that die cracking during package assembly can occur.

• 한국정밀공학회지
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• 제16권7호
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• pp.85-93
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• 1999

In this study, PC-based slicing machine and driving software were constructed for the purpose of automation of semi-conductor cutting process. The biggest feature of software is variation of parameter and include data base, signal monitoring, error report, corresponding action or automatic motion planing. Parameters were drawn and algorithms were developed to make software by GUI interface. The cutting experiment was done for sampled wafer to see the effectiveness of the soft automation. From the experimented and implemented results, it is shown that parameters for automation of slicing process could be drawn, then its algorithms constructed. It could be considered what is the merit of this slicing machine by comparing the PC-based and the NC-based.

• 한국기계가공학회지
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• 제15권1호
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• pp.26-33
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• 2016

In this study, a new method to develop a fixed diamond wire for silicon wafer machining by the multi-wire cutting method was developed. The new twist diamond wire has improved performance with high breaking strength and chip flutes structure. According to these characteristics, the new twist diamond wire can be used in the higher speed multi-wire cutting process with a long lifetime. Except the design of the new structure, the twist diamond wire is coating by electroless-electroplating process. It is good for reducing breakage and the falling-off of diamond grains. Based on the silicon material removal mechanism and performance of the wire-cutting machine, the optimal processing condition of the new twist diamond wire has been derived via mathematical analysis. At last, through the tensile testing and the machining experiments, the performance of the twist diamond wire has been obtained to achieve the development goals and exceed the single diamond wire.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2003년도 추계학술대회 논문요약집
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• pp.65-65
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• 2003

• 한국재료학회:학술대회논문집
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• 한국재료학회 1993년도 춘계학술발표회
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• pp.93-93
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• 1993

• 마이크로전자및패키징학회지
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• 제22권3호
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• pp.19-23
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• 2015

본 연구에서는 COG (Chip On Glass) 패키지 적용을 위해 Au 범프를 전기도금 공정을 사용하여 Al/Si wafer와 SiN/Si wafer 위에 TiW/Au 구조를 갖는 두 종류의 Au범프 시료를 제작하였다. UBM (Under Bump Metallurgy) 물질로서 TiW 박막을 스퍼터링 방법으로 증착하였으며 스퍼터링 입력 파워(500~5000 Watt)에 따른 박리 현상을 관찰하였다. 안정된 계면 접착을 나타내는 스퍼터링 파워는 1500 Watt임을 확인 할 수 있었다. 또한 SAICAS (Surface And Interfacial Cutting Analysis System) 장비를 사용하여 기판 종류에 따른 Au Bump의 접착력을 조사하였다. TiW 증착 조건은 스퍼터링 파워를 1500 Watt로 고정하였다. TiW/Au 계면의 접착력은 두 종류의 wafer (Al/Si과 SiN/Si wafers)에 관계없이 오차 범위 안에서 비슷한 접착력을 보여주었으나, TiW UBM 스퍼터링 박막 계면에서의 접착력은 하부 박막인 Al 금속과 SiN 비금속 박막에서의 접착력 차이가 약 2.2배 크게 나타났다. 즉, Al/Si wafer와 SiN/Si wafer위에 증착된 TiW의 접착력은 각각 0.475 kN/m와 0.093 kN/m 값을 나타내었다.

• 청정기술
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• 제22권4호
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• pp.274-280
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• 2016

본 연구에서는 태양광용 웨이퍼를 제조하는 과정에서 발생하는 실리콘 폐슬러지의 함유물질 중 공정원가의 25% 가량을 차지하고 있는 절삭유를 화학적으로 재생하기 위한 방법을 개발하고자 하였다. 이를 위해 아세톤, HCl, NaOH, KOH, $Na_2CO_3$, 불산, 염화메틸렌 등 7종류의 시약이 이용되었으며 다양한 농도로 폐슬러지와 반응을 실시하고 3000 rpm의 속도로 60분간 원심분리를 수행하였다. 그 결과, 실리콘분말 및 금속분말과 같은 고형물과 액상의 절삭유를 분리하기 위한 최적 시약 및 조건이 0.3 N NaOH로 확인되었다. 시판되는 절삭유의 약산성 특성에 맞게 pH 조절이 요구되어 금속분말 제거에 효과적인 0.1 N HCl과 폐슬러지를 먼저 반응시킨 후 0.3 N NaOH로 후처리 한 재생 절삭유의 pH가 6.05로 나타났으며 0.3 N NaOH 단독으로 폐슬러지에 적용하였을 때 보다 우수한 탁도를 나타내었다. 시판용 절삭유와의 특성을 비교하고자 FT-IR 분석을 실시한 결과, 재생유로서의 가능성이 확인되었으며 실험을 통하여 얻어진 절삭유 회수율은 86.9%로 나타났다.

• Tribology and Lubricants
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• 제32권2호
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• pp.44-49
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• 2016

Diamond mechanical polishing (DMP) is a crucial process in a sapphire wafering process to improve flatness and achieve the target thickness by using free abrasives. In a DMP process, material removal rate (MRR) is a key factor to reduce process time and cost. Controlling mechanical parameters, such as velocity and pressure, can increase the MRR in a DMP process. However, there are limitations of using high velocities and pressures for achieving a high MRR owing to their side effects. In this paper, we present the lapping characteristics and improvement of MRR by using a fixed abrasive plate through an experimental study. The change in MRR as a function of velocity and pressure follows Preston's equation. The surface roughness of a wafer decreases as the plate velocity and pressure increases. We observe a sharp decrease in MRR over the lapping time at a high velocity and pressure in the velocity and pressure test. An analysis of surface roughness (Rq and Rpk) indicates that wear of abrasives decreases the MRR sharply. In order to investigate the effect of abrasive wear on the MRR, we utilize a cutting fluid and a rough wafer. The cutting fluid delays the wear of abrasives resulting in improvement of MRR drop. The rough wafer maintains the MRR at a stable rate by self-dressing.